Power Electronics and Drives Questions Latest Power Electronics and Drives MCQ Objective Questions co eee APE Ra iteliuy Start Complete Exam Preparation eerie teeta Practice od Question Benk eos Question 1: View this Question Online > For the 36 full converter having resistive load, the ripple frequengy f ripple is 1. 50 Hz 2. 350Hz 3. 250Hz 4. 150 HZ 5. 300 Hz i (Detailed Solution Below) Option 5 : 300 Hzcoaching India’s Super Teachers for all govt. exams Under One Roof Cae re Enroll For Free Now Power Electronics and Drives Question 1 Detailed Solution Concept: Ripple Frequency: Ripple frequency is the output frequency of a converter which is some integral multiple of the supply frequency. Fignte= n x f Frigpie= Ripple frequency f, - Supply frequency = No. of pulses in the time period ~ Calculation: The 36 full converter has 6 no. of pulses in the time period of the output waveform. fs= 50 Hz Frigpte = 6x50 Frigpie= 300 Hz & Additional Information The 16 full converter has 2 no. of pulses in the time period of the output waveform. so, Frigte =2 xt Fripge= 2 x 50 Frigote = 100 2al erent Start Complete Exam Preparation =n Proaice mies eee i a Gd roe Download App Question 2: View this Question Online > Which of the following is the correct application for IGBT device compared to MOSFET? 1y Moose and high frequency 2. Low voltage and high frequency 3. O voltage and High frequency 4. Low voltage and low frequency 5. High voltage and low frequency Answer (Detailed Solution Below) ‘Option 5: High voltage and low frequency Power Electronics and Drives Question 2 Detailed Solution The correct answer is option 5):(High voltage and low frequency) Concept: + IGETs are extensively =x ‘AC and low-frequency applications such as in inverter circuits. + MOSFETs are used in low-poW=PDC applications like in power supplies + IGBT has the ability to handle very high voltage and high power. MOSFET is capable of handling only low to medium voltage and power. + IGBT can only be used for relatively low frequencies, up to a few kHz. MOSFET can be used for very high frequency (of the order of MHz) applications. + When IGBT is conducting current, it produces comparatively low forward voltage drop. MOSFET produces a higher forward voltage drop than IGBT. <2 aa CT aaa Bernie Bare Oe Moan: BA sire RAC EET Tice ti cenkl Canes Hk we RAT eeethan IGBT. + Hence option 3 is correct. Ca eee ae bali) eer yt Start Complete Exam Preparation reed Practice aa Decleor) Cresco rus baer Download App Question 3: View this Question Online > D oT t+ J Load cH | If vis the duty cycle type and output voltage of the chopper circuit above is 1. step up, as 2. step down aVs 3. Vs Step down, t= Vs 4. Step up, ta avs 5. Buck - Boost, +2 Answer (Deiailed Solution Below) Vs Option 4: Step up, 43 he eeExplanation: The circuit diagram of a boost converter is shown below. pe a Ve by H Step Up or Boost converter is used to obtain the output voltage greater than the input voltage. The relation between the output voltage and the input voltage is given by = Wor Where ais the duty cycle of the chopper. © Additional Information|, Buck converter Vo = 5 Vin Load kt Dk |, tm Le v= % Boost converter \, \s V, [toad +s | {Switch Buck-Boost converter oh * Cuk converter AV, ‘is Cua ce eae Lc e Start Complete Exam Preparation eee r=) oe Ciesteaccug Question 4: View this Question Online > The device whose symbol is seen to be Two SCR's Inverse parallel connected is: 1, Triac switch2. Silicon unilateral switch 3. Mid-point gate thyristor 4. Silicon unidirectional diac Power Electronics and Drives Question 4 Detailed Solution TRIAC: * The TRIAC is a 3-terminal semiconductor device and may be considered equivalent to two SCRs connected in antiparallel or Inverse paralle + TRIAC are bidirectional devices. + Its ideal for operation utilizing AC power for switching purposes (operated at power frequency) + It can control current flow for both halves in an alternating current cycle. Anode 2 Gate Anode 1 The V-I characteristics are shown below.Quadrant II 1 Reverse blocking OFF) |] ee a \ +V Reverse =a Which device circuit symbol is shown in the figure below? anode fr?gate cathode 1. Silicon control switch 2. Silicon unidirectional diac 3. Triac switch 4. Thyristor double control switch 5. Silicon-controlled rectifier Answer (Detailod Solution Bolow) Option 1 : Silicon control switch Power Electronics and Drives Question 5 Detailed Sol + Asilicon-controlled switch, or SCS, is e: R with an extra gate terminal. + Typically, the load current through an Si d by the anode gate and cathode terminals, with the cathode g} anode terminals sufficing as control leads. If we take the equivalent circuit of an SCR and add another external terminal, connected to the base of the top transistor and the collector of the bottom transistor, we have a device known as a silicon- controlled switch. OU i ‘gate gate cathode This extra terminal allows more control to be exerted over the device, particularly in the mode of forced commutation, where an external signal forces it to turn off while the main current through the device has not yet fallen below the holding current value. Top Power Electronics and Drives MCQ Objective QuestionsCa arr gee eel Start Complete Exam Preparation Rene ears eee’ occas Question Benk poy Question € View this Question Online > For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE? 1. All th our are majority Carrier devices. 2. All the tare minority carrier devices. 3. IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carr devices. 4, MOSFET is majority carrier device, whereas IGBT, Diode Thyristor are minority carrier devices. Answer Option 4: MOSFET is majority carrier device, whereas IGBT, Diode Thyristor are minority carrier devices. Power Electronics and Drives Question 6 Detailed Solution In majority carrier devices €oRtduction is only because of majority carriers whereas in minority carrier devices conduction is due f@beth majority and minority carriers. 1. MOSFET is a majority carrier device. 2. Diode is both majority and minority carrier device. 3. Thyristor is minority carrier device 4, IGBT is minority carrier device era eer) Deobans no Download App Question 7 . 2 View this Question Online > Ina three phase (50Hz) full converter, the ripple frequency in output voltage? 1, SOHZ Answer (Detailed Solution Below) Option 4: 300 Hz Power Electronics and Drives Question 7 Detailed Solution Concept: Ripple frequency at the output = m x supply frequency fo=m* fy Where m = types of the pulse converter Calculation: A three-phase full-wave AC “un is a 6-pulse converter Number of pulses (m) = 6 fo = 6 x supply voltage frequency + fo = 6x50 fo = 300 Hzeae ca ge PS elem es lela) Question 8 View this Question Ontine > Astep-up chopper is fed with 200 V. The conduction time of the thyristor is 200 us and the required output is 600 V. If the frequency of operation is kept constant and the pulse width is halved, what will be the new output voltage? 1. 600 volts 2. 300 volts 3. 400 volts 4.200 volts ‘Answer (Detailed Solution Below) Option 2: 300 volts Power Electronics and Drives Question 8 Detailed Solution Formula: Vo= Vial ete) (1) Where, Vo is the output voltage Vin is the input voltage Ton is the pulse width ApplicatiorGiven, Vin = 200 volts Ton = 200 ps Vp = 600V From equation (1), oe) ot, = p50 or, 2T - 6€00 = T Hence, T = 300 us If the Pulse width is half then, the new value of pulse width (Toy) will be, = Ton = 200 = Tony = Tg = 200 = 100 ps Hence, Hence, the new value of output voltage (Vo) will be, Vy = Vigl pF) = 200 X ( 539 ) = 300 volts om India’s #1 Learning Platform Jean ea Start Complete Exam Preparation ote’ Nera Question Bank Petes jownload App Question 9 View this Question Online > In an SCR with four layers represented as shown in the given figure, which are the layers that are equally doped? A PB Ni co] P, Ne% 2. Pp and No 3. Py and Ny 4, Ny and No Answer (Detailed Solution Below) Option 1: P) and No Power Electronics and Drives Question 9 Detailed Solution wo Al, ied + PcENY Construction: + The SCR is a four-layer and three-terminal device. + The four layers made of P and N layers are arranged alternately such that they form three junctions Jy, Jo, and Ja. « These junctions are either 1: Doping level: iffused based on the type of construction. + The level of doping varies between the different layers of the thyristor. + Out of these four layers, the first layer (P1 or P+) and Last layer (N2 or N+) are heavily doped layers. «The second layer (N1 or Nisa lightly doped layer and the third layer (P2 or P+) isa moderately doped layer. + The junction J1 is formed by the P+ layer and N- layer. + Junction J2 is formed by the N- layer and P+ layer + Junction J3 is formed by P+ layer and N+ layer. + Thinner layers would mean thet the device would break down at lower voltages. 2 eX ee Sen atta Ree tere Start Complete Exam Preparation(eae rd So ir po vi Download App Question 10 View this Question Online > ‘As compared to power MOSFET, a BIT has 1. Higher switching losses but lower conduction losses 2. Higher switching losses and higher conduction losses 3. Lower switching losses and Lower conduction losses 4. Lower switching losses but higher conductionilosses Answer (Detailed Solution Belew), Option 1: Higher switching losses but lower conduction losses ee Electronics and Drives Question 10 Detailed Solution Conce| BIT MOSFET Bipolar device Unipolar device Low input impedance High input impedanceSEE rE re ene SE Ce Eve Low on-state voltage drop and low conduction loss High on-state voltage drop and higher conduction loss Higher power handling levels and hence preferred in high power applications Lower power handling levels and hence preferred in low power applications Secondary breakdown occurs and high switching losses Negative temperature coefficient Free from the secondary breakdown and lower switching losses Positive temperature coefficient Not advisable for parallel operation advisable for parallel Lower operating frequency(10kHz) “a higher operating frequency(100kHz) On state in the saturation region On state in the ohmic region Controlled turn on and turn off operation of the device Controlled turn on and turn off operation of the device Turn on and tum off time depend on junction capacitance ‘Smaller turn off time Continuous Controlled signal requirement Continuous Controlled signal requirement eee ane pe cia PS lame Ce Cm loll Deo Mock Tests Pit cg Py ibe ed cg ceQuestion 11 View this Question Online > A full-wave rectifier uses 2 diodes. The internal resistance of each diode is 20 Q. The transformer RMS secondary voltage from centre tap to each end of the secondary is 50 V and the load resistance is 980 Q. Mean load current will be 1. 454 245A 3. 45 mA 4. 45 uA Answer (Detailed Solution Selow) NaS Power Electronics and Drives Question 11 Detailed Solution Concept: Center tapped full wave rectifier: + The Center tapped full-wave rectifier is a device used to convert the AC input voltage into DC voltage et the output terminals. + It employs a transformer with the secondary winding tapped at the center point. And it uses only two diodes, which are connected to the opposite ends of a center-tapped transformer as shown in the figure below. + The center tap is usually considered as the ground point or the zero voltage reference point. 9 ¥. AGE bo. retort Pe = oYAni The DC output voltage or average output voltage can be calculated as follows, Vo = Vac = 1 IV qsinut dust ° = = So (ensut)| Ms (—coen — (~co80*)) = Ym(—(-1) +1) Vo = 2V pq! Now we can calculate the average or mean culffemt of load by dividing the average load voltage by load resistance R,. Therefore mean load currents @iven by Io = Vo/Ri If the internal resistance of the diode is given in that case mean load current Ip = Vo / (Ri + ¥) Where r = internal resistance of the diode. Calculation: Given that Rms value of supply voltage V = 50 V The internal resistance of diode r = 200 The load resistance R, = 9802 Maximum voltage on the secondary side Vi, = V2V = V2 x 50 = 70.7 V (2x70.7) _ ‘Average or DC output voltage Vp = In a3 phase semi-converter, firing angle = 120% and extinction angle = 110°. Each SCR and freewheeling diode conducts respectively for 1. 60°, 50° 3. 60%, 10° 4, 30°, 40° Answer (Detailed Solution Below) Option 1: 60°, 50° Power Electronics and Drives Question 12 Detailed Solution Concept: Ina three-phase semi-converter, The conduction period of each thyristor = ma The conduction period of freewheeling diode = B- 60° Where ais the firing angle Bis the extinction angle Calculation: ~ Given that, firing angle (a) = 120° Extinction angle (B) = 110° The conduction period of each thyristor = ta = 180-120 = 60° The conduction period of freewheeling diode = B- 60° = 110 -60 = 50° SRR eastPROT faeaued aa Deter Cresent Pyotr Download App Question 12 View this Question Online > In which of the following choppers do the voltage and current remain negative? 1. Type-A 2. Type-E 3. Type-C 4. Type-D Answer (Detailed Solution Below) Option 2: Type-E Power Electronics and Drives Question 13 Detailed Solution Type A chopper (first quadrant chopper): Vo ZA_.,, ; | + When chopper is ON, Vp = V, and current flows in the direction of the load (as shown in fig). + When chopper is off, Vo = 0 but Ip continues to flow in the same direction through freewheeling Sadie V, LEType B chopper (Second quadrant chopper): + In type B chopper, load must always contain DC sources. + When chopper is ON, Vo = 0 but load E drives the current through the inductor and the chopper and thus inducter stores energy during the time Tow of the chopper. + When the chopper is off, “0 = + 4 thus Vo will be more than V; and thus diode Ds will be forward biased and begins conducting and power starts flowing to the source. Note: No matter the chopper is ON or Off, current Ip will be flowing out of the load (opposite direction to the given circuit shown) and treated as negative. Since Vo is +ve and Ip is -ve, Type B chopper is II"? quadrant chopper ‘Type C chopper (two quadrant type A chopper): De Vo L | lo lo: lo Vo | E Vo + Type -C chopper is obtained by connecting type A chopper and type B chopper in parallel. + In this chopper, Vo is always +ve as FD. is connected across it + In this type of chopper average value of current may be +ve or -ve. + For regenerative breaking and motoring, there type of chopper configuration is used. ‘Type D chopper (Two quadrant Type B chopper) Vo x Oo 4 ‘ Her + When the two choppers are ON, Vo = Vs xX+ Average output voltage Vo will be +ve when the chopper turns ON time ‘Tony’ will be more than their turn off time ‘Toff, otherwise it will be negative. + As the diodes and the choppers conduct current only in one direction, the direction of load current will always be positive. Type E chopper (four quadrant chopper): +40 | CHy ie Vs Vo CHp - Ds Conducts CH, - CH, On Ds - Dy Conducts k< Match List (1-$ Rect! eeding resistive load) with List-ll (Average output voltage) and select the correct, aod List-I S} ntrolled half wave Ontrolied half wave Controlled full wave D. Semi controlled List 1, Zipt (1+ cose) W, feat 2: cosa \, .e 4, “et (L+cosa) 1, A-3,B-2,C-4,D-1 2. A-1,B-4,C-2,D-3 3, A-3,B-4,C-2,D-1 co 4. A-1,B-2,C-4,D-3 Answer (Detailed Solution Below) XS Option 3: A- 3, B-4,C-2,D-1 Power Electronics and Drives Question 14 Detailed Solution The average output voltage of different 1-6 rectifier circuits is: , A. Uncontrolled half wave - ¥, 8. Controlled half wave - ~et (1 + cos) %, C.Controlled full wave - x= COS &opel D. Semi controlled - -~ (1 + cos @) eo Pe aR Relea) Re Cea Slee CRC Cel) pees cay ares era Cresta Set Download App Question 15 \yiew this Question Online > Which of the following is NOT an advantage of SCR'as a switch? 1. The switching speed is very high. 2. The operation does nat produce harmonics. 3. Ir gives noiseless operation at high efficiency. 4 A. moving parts. Answer (Detailed Solution Below) Option 1: The switching speed is very high. Power Electronics and Drives Question 15 Detailed Solution Advantages of SCR: + It can handle large voltages, currents, and power. + The voltage drop across conducting SCR is small. This will reduce the power dissipation in the SCR. ‘ + Easy to turn on. - The operation does not produce harmonics. + Triggering circuits are simple. + It has no moving parts. « It gives noiseless operation at high efficiency. + We can control the power delivered to the load,Drawbacks of SCR: + It can conduct only in ac. + It can tun on accidentally due to the high dv/dt of the source voltage. + It is not easy to turn off the conducting SCR. We have to use special circuits called commutation circuits to turn off a conducting SCR. + SCR cannot be used at high frequencies or perform high-speed operations. The maximum frequency of its operation is 400 Hz. + Gate current cannot be negative. it can control power only during the one-half cycle of Applications of SCR: Controlled rectifiers, DC to DC converters or choppers, DC to AC converters or inverters, As a static switch, Battery chargers, Speed control of DC and AC motors, Lamp dimmers, fan speed regulators, AC voltage stabilizers.