DAY THIRTY SEVEN

Unit Test 8
(Electronic Devices)
1 In the figure shown below, which of the diodes are 4 The graph given below represents the I-V characteristics
forward biased? of a zener diode. Which part of the characteristics curve
+5V +10V is most relevant for its operation as a voltage regulator?

R R R I (mA)
Forward bias
+5V –10V Reverse bias
a
(1) (2) (3) VZ
d c b V (volt)
e
–10V R R
I (mA)
(4) –5V (5) –10V
(a) ab (b) bc
(a) 1, 2, 3 (b) 2, 4, 5 (c) 1, 3, 4 (d) 2, 3, 4 (c) cd (d) de
2 The resistance of a germanium junction diode whoseV -I 5 Truth table for system of four NAND gates as shown in
graph is shown in the figure, is (Vk = 0.3 V). figure is

I 10 mA A

Y
Vk 2.3V V

(d) 
10 
(a) 5 kΩ (b) 0.2 kΩ (c) 2.3 kΩ  kΩ
 2.3  B

3 In the figure, the input is across the terminals A and C

A B Y A B Y A B Y A B Y
and the output is across B and D. Then, the output is 0 0 0 0 0 0 0 0 1 0 0 1
B (a) 0 1 1 (b) 0 1 0 (c) 0 1 1 (d) 0 1 0
1 0 1 1 0 1 1 0 0 1 0 0
1 1 0 1 1 1 1 1 0 1 1 1

6 In common-emitter amplifier, the current gain is 62. The

A C
collector resistance and input resistance are 5 k Ω and
500 Ω, respectively. If the input voltage is 0.01 V, the
output voltage is
D (a) 0.62 V (b) 6.2 V
(a) zero (b) same as the input (c) 62 V (d) 620 V
(c) full wave rectified (d) half wave rectified
 7 The reverse saturation of p-n diode 14 The following configuration of gates is equivalent to
(a) depends on doping concentrations A
(b) depends on diffusion length of carriers
B AND
(c) depends on the doping concentrations and diffusion G1
length Y
(d) depends on the doping concentrations, diffusion length G3
and device temperature
8 A p-n-p transistor is said to be in active region of G2

operation, when (a) NAND (b) XOR

(a) both emitter junction and collector junction are forward (c) OR (d) None of these
biased 15 The following circuit represents
(b) both emitter junction and collector junction are reverse
biased A
(c) emitter junction is forward biased and collector junction
is reverse biased Y
(d) emitter junction is reverse biased and collector junction
is forward biased
9 A n -p-n transistor conducts, when B
(a) collector is positive and emitter is at same potential as (a) XNOR gate (b) XOR gate
the base (c) AND gate (d) NAND gate
(b) both collector and emitter are negative with respect to 16 The truth table is given below
the base
(c) both collector and emitter are positive with respect to Inputs Output
the base A B Y
(d) collector is positive and emitter is negative with respect
0 0 0
to the base
1 0 0
10 To get an output Y = 1 from the circuit shown, the inputs
0 1 0
A, B and C must be respectively
1 1 1
A
represents
B Y (a) AND gate
C
(b) NOR gate
(a) 0, 1, 0 (b) 1, 0, 0 (c) OR gate
(d) NAND gate
(c) 1, 0, 1 (d) 1, 1, 0
11 An AND gate is followed by a NOT gate in series. With 17 If internal resistance of cell is negligible, then current
two inputs A and B, the Boolean expression for the flowing through the circuit is
output Y will be 30Ω D2

(a) A + B (b) A ⋅ B
(c) A ⋅ B (d) A + B D1 30Ω
12 In the CB mode of a transistor, when the collector voltage
is changed by 0.5 V. The collector current changes by
20Ω
0.05 mA. The output resistance will be + –
(a) 10 k Ω (b) 20 k Ω 5V
(c) 5 k Ω (d) 2.5 k Ω (a)
3
A (b)
5
A
50 50
13 The current gain of a transistor in common emitter mode 4 2
(c) A (d) A
is 49. The change in collector current and emitter current 50 50
corresponding to the change in base current by 5.0 µA, Ic
will be 18 For a transistor = 0.96, the current gain in
Ie
(a) 245 µA, 250 µA (b) 240 µA, 235 µA
common-emitter configuration is
(c) 260 µA, 255 µA (d) None of the above
(a) 6 (b) 12 (c) 24 (d) 48
19 For a given circuit of ideal p-n junction diode, which of 24 The diode used in the circuit shown in the figure, has a
the following is correct ? constant voltage drop of 0.5 V at all currents and a
Diode maximum power rating of 100 mW. What should be the
R
value of the resistor R, connected in series with the diode
for obtaining maximum current?
0.5 V
R
V
(a)In forward biasing the voltage across R is V I
(b)In reverse biasing the voltage across R is V 1.5 V
(c)In forward biasing the voltage across R is 2V
(d)In reverse biasing the voltage across R is 2V
(a) 1.5 Ω (b) 5 Ω
20 Identify the operation performed by the circuit given (c) 6.67 Ω (d) 200 Ω
below 25 In a forward biased p-n junction diode, the potential
–
A
barrier in the depletion region is of the form
A
V V
Y
–
B
B (a) (b)

(a) NOT (b) AND (c) OR (d) NAND

p n p n
21 In the following circuit, the outputY becomes zero for the
V V
inputs
A
1 (c) (d)
B
3 Y
p n p n
C 2

(a) A = 1, B = 0, C = 0 (b) A = 0, B = 1, C = 1 26 An n-p-n transistor circuit is arranged as shown in figure.

(c) A = 0, B = 0, C = 0 (d) A = 1, B = 1, C = 1 It is

22 The inputs and outputs for different time intervals are

n
given below the NAND gate. p RL
n Vout
Time Input A Input B Output Y Vin
t 1 to t 2 0 1 P
t 2 to t 3 0 0 Q
t 3 to t 4 1 0 R
(a) a common base amplifier circuit
t 4 to t 5 1 1 S
(b) a common emitter amplifier circuit
The values taken by P , Q , R , S are respectively (c) a common collector amplifier circuit
(d) None of the above
(a) 1, 1, 1, 0 (b) 0, 1, 0, 1
(c) 0, 1, 0, 0 (d) 1, 0, 1, 1 27 The junction diode in the R 0.7 V
(e) 1, 0, 1, 0 following circuit requires a
23 In the figure, potential difference between A and B is minimum current of 1 mA to be
above the knee point (0.7 V) of its
10 kΩ A
I-V characteristic curve. The
voltage across the junction diode VB
30 V 10 kΩ 10 kΩ is independent of current above
the knee point, if VB = 4 V, then the maximum value of R,
B so that the voltage is above knee point will be
(a) zero (b) 5 V (c) 10 V (d) 15 V
(a) 3.3 kΩ (b) 4.0 kΩ (c) 4.7 kΩ (d) 6.6 kΩ
28 The circuit shown in the figure 70 Ω 33 The ratio of electron and hole current in a semiconductor
contains two diodes, each with a is 7/4 and the ratio of drift velocities of electrons and
forward resistance of 30 Ω and 70 Ω holes is 5/4, then ratio of concentrations of electrons and
with infinite backward resistance. holes will be
If the battery is 3 V, the current + 50 Ω
(a) 5/7 (b) 7/5 (c) 25/49 (d) 49/25
(in ampere) through the 50 Ω 3V 34 In a junction diode, the direction of diffusion current is
resistance is
(a) from n-region to p-region
(a) zero (b) 0.01 (c) 0.02 (d) 0.03
(b) from p-region to n-region
29 Which of the following is not equal to 1 in Boolean (c) from n-region to p-region, if the junction is forward
algebra? biased and vice versa, if it is reverse biased
(a) A ⋅ A (b) A ⋅ A (d) from p-region to n-region if the junction is forward
biased and vice versa, if it is reverse biased
(c) A + A (d) A + 1
30 The output Y of the logic circuit shown in figure, is best 35 The direction of flow of current in the given diagram is
represented as +5 V 200Ω +3 V
A
B Y (a) zero (b) 10−2 A (c) 10 A (d) 0.025 A
III
C II
I Direction (Q. Nos. 36-41) In each of the following questions
(a) A + B ⋅ C (b) A + B ⋅ C a statement of Assertion is given followed by a corresponding
(c) A + B ⋅ C (d) A + B ⋅ C statement of Reason just below it. Of the statements mark the
correct answer as
31 A p-n junction diode shown in the figure can act as a rectifier. (a) If both Assertion and Reason are true and the Reason is
An alternating current source (V ) is connected in the circuit. the correct explanation of the Assertion
The current (I ) in the resistor (R ) can be shown by (b) If both Assertion and Reason are true but the Reason is
not correct explanation of the Assertion
(c) If Assertion is true but Reason is false
(d) If both Assertion and Reason are false
V R
36 Assertion (A) In a common emitter transistor amplifier,
the input current is much less than the output current.
Reason (R) The common emitter transistor amplifier has
I I
very high input impedance.
(a) (b)
37 Assertion (A) The logic gate NOT can be built using
t t diode.
Reason (R) The output voltage and the input voltage of
I I
the diode have 180° phase difference.
(c) (d)
38 Assertion (A) A transistor amplifier in common emitter
t t configuration, has a low input impedance.
Reason (R) The base to emitter region is forward biased.

32 In the circuit as shown in figure, A and B represent two 39 Assertion (A) NAND or NOR gates are called digital
inputs and C represents the building blocks.
A Reason (R) The repeated use of NAND or NOR gate can
produce all the basic or completed gates.
C
R
40 Assertion (A) The resistivity of a semiconductor
B
increases with temperature.
Reason (R) The atoms of a semiconductor vibrate with
(a) OR gate (b) NOR gate larger amplitudes at higher temperatures thereby
(c) AND gate (d) NAND gate increasing its resistivity.
 ANSWERS
1. (b) 2. (b) 3. (c) 4. (d) 5. (a) 6. (b) 7. (d) 8. (c) 9. (d) 10. (c)
11. (b) 12. (a) 13. (a) 14. (b) 15. (a) 16. (a) 17. (b) 18. (c) 19. (a) 20. (b)
21. (d) 22. (a) 23. (c) 24. (b) 25. (d) 26. (b) 27. (a) 28. (c) 29. (b) 30. (d)
31. (b) 32. (a) 33. (b) 34. (b) 35. (b) 36. (c) 37. (d) 38. (a) 39. (a) 40. (d)

Hints and Explanations

1 A p-n junction diode is said to be Y ′ is the input for NOT gate
forward biased, if the positive terminal A B A B A⋅B B⋅ A Y ∴ Y = Y′
of the external battery is connected to
p-side and the negative terminal to the ⇒ Y = A⋅B
0 0 1 1 0 0 0
n-side of the junction.
0 1 1 0 0 1 1 12 Here, ∆VC = 0.5 V
Thus, 2, 4 and 5 are forward biased.
∆IC = 0.05 mA = 0.05 × 10−3 A
2 R = ∆V = 2.3 − 0.3 =
2
× 103 1 0 0 1 1 0 1
∆I 10 × 10−3 10 Output resistance is given by
1 1 0 0 0 0 0 ∆VC
= 0.2 × 103 Ω = 0.2 kΩ Rout =
It is the truth table for XOR gate. ∆ IC
3 The given figure represents a full wave
6 Voltage gain = resistance gain × current 0.5
rectifier, which is also known as bridge = = 104 Ω = 10 kΩ
rectifier, which uses four diodes. gain 0.05 × 10−3
V out R
4 When reverse bias is increased, then the or = out × β ∆ IC
V in R in 13 Current gain, β = , where ∆IC is
electric field across the junction also ∆I B
increases. At some stages, the electric R out
⇒ V out = × β × V in change in collector current and ∆I B is
field becomes so high that it breaks the R in
covalent bonds, creating electron-hole 5000 change in base current.
∴ V out = × 62 × 0.01 = 6.2 V ∴∆IC = β ∆I B = 49 × 5 = 245 µ A
pairs. This mechanism is known as 500
Zener breakdown. Also, ∆ I E = ∆ I B + ∆ IC
7. The reverse saturation of p-n diode
In breakdown region for a long range of
depends on the doping concentrations, = (245 + 5)µA
load (R L ), the voltage remains the same = 250 µA
diffusion length and device
though the current may be large. So,
temperature. 14 The given output equation can be
option (d) is correct.
8 For amplification of a p-n-p transistor, written as
5 Output, Y = ( A ⋅ ( A ⋅ B )) ⋅ (B ⋅( A ⋅ B ))
emitter junction is forward biased and
collector junction is reverse biased. In A (A + B)
this state, p-n-p transistor is said to be B
A(AB) in active region of operation. G1
A Y
9 In an n-p-n transistor, the emitter-base A
G3
junction is forward biased. However, A .B
AB B G
y collector-base junction is reverse biased. 2

10 For the given combination,

Y = ( A + B )⋅ C Y = ( A + B ) ⋅ AB
B Y =1
B(AB) Y = ( A + B )⋅ ( A + B ) [QUsing
If A =1
B =0 de Morgan’s theorem]
= ( A + A ⋅ B ) ⋅ (B + A ⋅ B ) C =1 = AA + AB + BA + BB

= ( A + A ⋅ B ) + (B + A ⋅ B ) 11 The inputs for AND gate give output = 0 + AB + AB + 0

= A ⋅ (A ⋅ B) + B ⋅ (A ⋅ B) Y′ = A⋅ B = AB + AB
= A ⋅ (A + B) + B⋅ (A + B) This boolean expression for XOR gate.
A Y' = A.B
= A⋅B + B⋅ A Y = Y' = A.B
B
15 The given output equation can be 20 The output of the circuit is consequence of this is the effective
written as barrier potential reduces. Hence, the
Y = A + B = A⋅B
graph (d) is correctly shown.
A
A A·B = A ⋅ B [Q A = A and B = B ]
26 Here, emitter is forward biased, and is
which is the output of an AND gate. common between input and output
21 Output of gate-1, Y1 = A ⋅ B circuit. Thus, the circuit is of n-p-n
Y
transistor with a common emitter
A amplifier mode.
1
B
A·B B 27 As, V B = V knee + IR
B
3 Y or 4 = 07. + 10−3 R
Y = A ⋅B ⋅ A⋅B 3.3
C 2 or R = = 3.3kΩ
= (A + B)⋅ (A + B) 10−3
(Using de Morgan's theorem)
Output of gate 2, Y2 = C 28 In the circuit, the upper diode D1 is
= A A + B B + BA + A B
Output of gate 3, Y = Y1 ⋅ Y2 = ( A ⋅ B ) ⋅ C reverse biased and the lower diode D2 is
= AB + A B forward biased. Thus, there will be no
Thus, from the given options output
This Boolean expression for XNOR gate. will be zero, if A = 1, B = 1 and C = 1 current across upper diode junction.
The effective circuit will be as shown in
16 We can see from the truth table that 22 NAND gate is obtained when the output
output is 1, only when its both inputs figure.
of AND gate is made as the input of
are 1. This is possible only for AND NOT gate. Boolean expression for 70Ω
gate. The Boolean expression for AND NAND gate is
gate is Y = A ⋅ B , which satisfies the
truth table as given below. A
0⋅ 0 = 0 Y
B 3V
1⋅ 0 = 0 + – 50Ω
Y = A⋅B
0⋅1 = 0
Total resistance of circuit,
1⋅1 = 1 Input (A) Input (B) Output (Y) R = 50 + 70 + 30 = 150 Ω
Here, symbol (⋅) represents AND 0 0 1 Current in circuit,
operation. V
1 0 1 I =
17 In the circuit, diode D1 is forward R
0 1 1 3
biased and diode D2 is reverse biased. = = 0.02 A
1 1 0 150
Therefore, no current flows in the arm
containing D2 and all of the current 23 Here, p-n junction is forward biased. If 29 (a) A ⋅ A = A + A = A + A = 1
flows through arm containing D1 . p-n junction is ideal, its resistance is (b) A ⋅ A = 0
zero. The effective resistance across A (c) A + A =1
Thus, current flowing through the
and B
circuit =
5
=
5
A 10 × 10 (d) A + 1 = 1
20 + 30 50 = = 5 kΩ Hence, all the options give the output 1
10 + 10
except option (b).
18 Given, Ic = Current gain (α ) = 0.96 Current in the circuit,
Ie V 30 2 30
I = = = A
So, current gain in common emitter R 15 × 103 103
A Y3
configuration is 2
α Current in arm, AB = I = B
B 2 Y2
3
β= 10 1
1−α Potential difference across A and B
C Y1
0.96 0.96 2
= = = 24 = × 5 × 103 = 10 V The output at gate 1, Y1 = B ⋅ C
1 − 0.96 0.04 103
Output at gate 2, Y2 = A + B ⋅ C
19 In forward biasing, the diode conducts. 24 Current through circuit, Final output, Y3 = Y 2 = A + B ⋅ C
For ideal junction diode, the forward P 100 × 10−3
resistance is zero. Therefore, entire I = = = 0.2 V
V 0.5 31 The given circuit represents a circuit of
applied voltage occurs across resistance
Voltage drop across, half wave rectifier. In this, during the
R, i.e. there occurs no voltage drop.
R = 1.5 − 0.5 = 1.0 V positive half cycle of input, p-n junction
Thus, voltage across R is V in forward
1 is forward biased. Hence, current flows
biasing. Hence, R = = 5Ω
0.2 in the load. But in the negative half
While in reverse biasing, the diode does
cycle of input, p-n junction is reverse
not conduct, so it has infinite 25 In forward biased p -n junction, the
biased. Thus, no current flows. So,
resistance. Thus, voltage across R is applied potential is opposite to the
zero in reverse biasing. option (b) is correct.
junction barrier potential V B . The
32 The circuit represents OR gate, as the 35 Here, p-n junction as forward biased with 38 As base to emitter region is forward
output at C is 1, when either A or B or voltage = 5 − 3 = 2 V biased. Hence, it will work as simple
both A and B have input at level 1. But 2 forward biased diode and resistance is
∴ Current I =
output at C is zero, when both A and B 200 low.
are at zero level, since for OR gate, the 1
= = 10−2 A 39 NAND or NOR gates are called
Boolean expression is C = ( A + B ). 100 universal (digital) building blocks
33 As, I = Anev d or I ∝ nv d 36 The common emitter transistor amplifier because using repeated order of these
has input resistance equal to 1 k Ω two types of gates we can produce all
Ie n v
∴ = e e (approx.), and output resistance equal to 10 the basic gates namely OR, AND or
Ih nh v h complex gates.
kΩ (approx.). The output current in CE
ne I v 7 4 7
or = e × h = × = amplifier is much larger than the input 40 Resistivity of a semiconductor
nh Ih ve 4 5 5 current. Hence, option (c) is correct. decreases with the temperature. The
37 NOT gate inverts the signal applied to it. atoms of a semiconductor vibrate with
34 In a p-n junction, the direction of
But in diode, the input and output are in larger amplitudes at higher
diffusion current is from p-region to
same phase. Thus, NOT gate cannot be temperature, thereby increasing its
n-region only.
built by a diode. Hence, option (d) is conductivity, not resistivity.
correct.