Intemational eR} Rectifier PD-9.375H IRF740 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated © Fast Switching © Ease of Paralleling © Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Vpgs = 400V Rog(on) = 0.552 Ip = 10A Parameter 35°C _ | Continuous Drain Current, Ves @ 10V 10 }00°C_| Continuous Drain Current, Vas @ 10V 63 A Pulsed Drain Current © 7 40 [Power Dissipation fEereeeeeentese W near Derating Factor 1.0 wre Gate-to-Source Voltage +20) Vv Single Pulse Avalanche Energy © 520 md Avalanche Current © 10 A Repetitive Avalanche Energy © 13 md ase ‘Operating Junction and 10 +150 |Tste | Storage Temperat HH °C I ‘Soldering Tee for 10 seconds ‘300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 lbfain (1.1 Nem) Thermal Resistance | Parameter Min. Typ Max. |_Units Junetion-to-Case i = 10 | Becs Case-to-Sink, Flat, Greased Surface =| 080 —__| ow | Psa ‘Junetion-to-Ambient aaa ne 2 4 251IRE740 Electrical Characteristics @ Ty = 25°C (unless otherwise specified) fea _ Parameter oe [Max [Units | Test Conditions [Veeewss | Drain-to-Source Breakdown Voltage —_|_V_[Ves=0V, Io= 250A Vieross/AT,| Breakdown Voltage Temp. Coefficient — [WAG [Reference to 25°C, lo= 1mA Rosion Static Drain-lo-Source On-Resistance | — | — | 0.55 | @ |Vas=10¥, 106.0 © [Vast ___| Gate Threshold Voltage | 20 [= [40 | V_ [Vos=Ves, lo= 25008 os Forward Transconductance 58 | — | = |S |Vos=50V, In=6.0A @ : — | = [es Vos=400V, Vas=0V logs Drain-to-Source Leakage Current SS eect (ae Gate-to-Source Forward Leakage = [=P i00 |, | ¥es=20V eee | Gate-to-Source Reverse Leakage = | = [ato] “| Vas=-20v Os Total Gate Charge = [=e Io=10A Tags. Gate-to-Source Charge = | = | 90 | nC | Voses20v [Ops Gate-to-Drain (‘Miller’) Charge = | = [ee Vas=10V See Fig, 6 and 13 © tery Tum-On Delay Time = [ey = ‘Voo=200V a Rise Time. = 27 T= | Ag |lo=t04 txon | f Delay Time Cea] 50_| | Ro=9.10 w Fall Time 24 Fiy=200 See Figure 10@ to intemal Drain Inductance =) 48) - Simm (zen) zn) 4 nH | from package & ts [intemal Source Inductance | = | 78 | — | | 0 contact teeth Ces Input Capacitance [faa fF — Vos=0V Coss Output Capacitance = [330 | =| pF | Vos=25v (cm ‘Reverse Transfer Capacitance [= Treo [ §=1,0MHz See Figure 5. Source-Drain Ratings and Characteristics Eee] Parameter EH Typ. | Max. | Units | “Test Conditions 's Continuous Source Current Pere etre oe MOSFET symbol | @BodyDiodey | | | |g | showing the yh Tem Pulsed Source Current ecco integral reverse m4 (Body Diode) © |_| pnjunction diode. “ls Vso |Diode Forward Voltage 20 | V_[Ti=25°C, te=10A, Vas-0V © | te Reverse Recovery Time 790 | ns. | Ty=25°C, Ir=10A, Qn Reverse Recovery Charge = [se [82 | uc |aidt=t00as © ten Forward Tum-On Time [intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo) Notes: © Repetitive rating; pulse width limited by @ Isos10A, didts120A/us, VoosVier)Dss, ‘max. junction temperature (See Figure 11) Tys150' ® Voo=60Y, starting Tj=25°C, L=9.1mH © Pulse width < 300 us; duty cycle <2%, Rg=250, lag=10A (See Figure 12)Ip, Drain Current (Amps) Ip, Drain Current (Amps) 4.50 20us PULSE WIOTH Tg = 25% wt @ o Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C 100 pg = 50¥ 20us PULSE NIOTH| rr Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRE740 to! 5 8 So gf 6 20us PULSE WIDTH fig = 150°C oF 109 oF Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150°C: 3.9 8 ig = 0m Baa a € § . 2-9 32 Be us 3 5 = oft os { Ves = 100 OSermaT=2O 0204060 8T 100 220 240 160 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. TemperatureIRE740 OR 00 TD = on TT Sos * ocr Cas SHORTED] a ves 7 0 Yee * _ 1 so 8 a [ "ae + ae 5 3 a 8 3 Gs 2 8 | 8 1 3s Fon TEST CIRCUIT 1 7 SEE FIGURE 13 1 ro 0 as 0 a Vps, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 108 — fe FEES oeendricn in tats anea LIMITED g 8 Fos (on E Pea < we : a 5 = é = 2 £ § 5 6 eo 3 3 & > é o° 6 | us R 2 Tuet50Pe i no tae, Oso rr a Vgp, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 254Ip, Drain Current (Amps) Pole Wich < tye Duty Factor s 0.1% Fig 10a. Switching Time Test Circuit Vos 20%. (SESE Lt 10%. seo Ves: ne To, Case Temperature (°C) yon) Nyon Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms. Case Temperature 10 Thermal Response (Zajc) wy Ered SINGLE PULSE noves: (TERMAL RESPONSE! HHH 1. oury FACTOR, D=ti/t2 LA HIti 2. PEAK Ty=Ppw x Ztnje + Te o ao 10° Od 7 10 ty, Rectangular Pulse Duration (seconds) Fig 11, Maximum Effective Transient Thermal Impedance, Junction-to-Case 255IRE740 Vary tpto obtain YDS required las ns A “Yoo 1000 eorrow ie @ Yvov JL “te Fig 12a. Unclamped Inductive Test Circuit g s Veenjoss by 3 Eas, Single Pulse Energy (mJ) g lyoo = Sov Vos. / : 2 7 001858 0 Starting Ty, Junction Temperature(*C) hs — — ~- Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms AS ireloedlcctaliciel Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing — See page 1509 Appendix C: Part Marking Information — See page 1516 International z6R] Rectifier Appendix E: Optional Leadforms — See page 1525 256