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Annealing Effect On Charge Transport
Annealing Effect On Charge Transport
https://doi.org/10.1007/s10854-019-02584-3
Abstract
Solar energy is an abundantly available form of clean and renewable energy resource that can be used to generate electricity
using many different photovoltaic technologies. Dye-sensitized solar cells (DSSCs) have attracted attention of researchers
due to their low cost and easy fabrication processes, when compared to conventional silicon-based photovoltaic devices.
Performance enhancement of DSSCs continues to be the subject of recent research. In this work, FTO/TiO2/N719/elec-
trolyte/Pt-type conventional DSSCs were fabricated with and without heat treatment of the FTO/TiO2 photoanode before
sensitization and Pt counter electrode. Results of the photovoltaic and impedance spectroscopic measurements are reported
and discussed. The photovoltaic data reveals relatively higher performance of the cell made after heat treatments of the
photoanode and the counter electrodes. The objective of this research is to study the reason for high performance obtained
employing the annealed photoanode. The overall power conversion efficiency and short-circuit current density of the device
made after heat treatment are observed higher than the one without heat treatment by 165% and 206%, respectively. The
impedance spectroscopic studies also confirmed high performance of the cell made after the heat treatments.
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Journal of Materials Science: Materials in Electronics
dV ||
2.2 Fabrication of FTO/TiO2/N719/electrolyte/ Rs = (1)
dJ ||J=0
Pt‑type DSSC without heat treatment (D1)
and with heat treatment (D2)
dV ||
Rsh = (2)
Device (D1) fabrication is quite simple as compared to the dJ ||V=0
device (D2). The mesoporous titania electrode without heat
treatment was dipped in 0.5 mM solution of N719 dye in
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Journal of Materials Science: Materials in Electronics
Table 1 Comparison of the parameters of the DSSCs using N719 as sensitizer without and with heat treatment of the FTO/TiO2 and FTO/Pt-
based photoanode and counter
Heat treatment Jsc (mA cm−2) Voc (mV) FF (%) η (%) RSh (kΩ) Rs (Ω)
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Journal of Materials Science: Materials in Electronics
the value of capacitance shift towards higher values such limitation due to minority carriers concentration, parame-
that it arrives at a maximum value after that it start decreas- ters related to charge transport, charge blocking due to slow
ing. However, at higher frequencies, the capacitance value injection or extraction at contacts etc. [30]. Capacitance
decreases, approaches near to zero and one can see a decline peak is observed as we reach higher potentials which have
in the portion of negative capacitance. Such trend of the been assigned to localized states of sub-bandgap because of
capacitance value in which it goes from positive to nega- the surface defects, in effect decreasing the efficiency of the
tive capacitance value is according to the earlier reported cell [35]. When the frequency is low and forward voltage is
studies on DSSCs [35, 36]. As the mentioned behavior of high the impedance spectra exhibit chemical capacitance and
capacitance is assigned to the electron ejection from the recombination resistance [2, 29], compared in Figs. 3 and 4.
FTO electrode back into mesoporous TiO2 [35]. These figures clearly show the trend, and their variation is
confirming the higher performance of the device with heat
3.2.2 Resistance–voltage (Rs–V) and capacitance–voltage treatment in the N719 dye.
(Cs–V) characteristics
The Rs–V and Cs–V graphs for the devices without heat- 4 Conclusions
ing and device with heating are compared in Figs. 4 and 5,
respectively. It can be depicted clearly that at low applied In conclusion, we have studied optical absorption spectra of
bias, the resistance and the capacitance remain unchanged, dye (N719) using UV–VIS spectroscopy. UV–VIS helped us
but as applied bias increases, peaks are observed in graphs of to understand the light absorption spectra. Two peaks appear
Rs–V and Cs–V. Dependence of impedance spectra on volt- at 378 and 578 nm, which refer to UV and visible region
age and frequency is due to interfaces, traps, states density, of the spectrum, respectively. Two devices are fabricated
140 120
120
100
CP (nF)
CP (nF)
100
80
80
60
60
40
40
20
20
0
-1.0 -0.5 0.0 0.5 1.0 -1.0 -0.5 0.0 0.5 1.0
Voltage (V) Voltage (V)
11
R S (Ω )
40 10
R S (Ω )
7
35 6
-1.0 -0.5 0.0 0.5 1.0 -1.0 -0.5 0.0 0.5 1.0
Voltage (V) Voltage (V)
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Journal of Materials Science: Materials in Electronics
2.5 4
Cs ( µ F)
Cs ( µ F)
2.0
1.5 2
1.0
0.5 0
-1.0 -0.5 0.0 0.5 1.0 -1.0 -0.5 0.0 0.5 1.0
Voltage (V) Voltage (V)
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