Professional Documents
Culture Documents
Go ISCSEMI BDX53
Go ISCSEMI BDX53
DESCRIPTION
・With TO-220C package
・High DC current gain
・DARLINGTON
・Complement to type BDX54/A/B/C
APPLICATIONS
・Power linear and switching applications
・Hammer drivers,audio amplifiers
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
3 Emitter
导体
Absolute maximum ratings(Ta=25℃)
电 半 TOR
SYMBOL PARAMETER CONDITIONS VALUE UNIT
固 DUC
BDX53 45
ICON
BDX53A 60
M
VCBO Collector-base voltage Open emitter V
S E
BDX53B 80
A N GEBDX53C 100
VCEO INCH
Collector-emitter voltage
BDX53
BDX53A
Open base
45
60
V
BDX53B 80
BDX53C 100
VEBO Emitter-base voltage Open collector 5 V
IC Collector current-DC 8 A
ICM Collector current-Pulse 12 A
IB Base current 0.2 A
PC Collector power dissipation TC=25℃ 60 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal resistance junction to case 2.08 ℃/W
Inchange Semiconductor Product Specification
CHARACTERISTICS
Tj=25℃ unless otherwise specified
BDX53 45
BDX53A 60
Collector-emitter
VCEO(SUS) IC=0.1A, IB=0 V
sustaining voltage
BDX53B 80
BDX53C 100
体
半导 R
BDX53C VCB=100V, IE=0
固电 UC T O
D
BDX53 VCE=22V, IB=0
IC ON
ICEO Collector cut-off current
E S E M 0.5 mA
G
BDX53B VCE=40V, IB=0
A N
CH
BDX53C VCE=50V, IB=0
IEBO IN
Emitter cut-off current VEB=5V; IC=0 2.0 mA
2
Inchange Semiconductor Product Specification
PACKAGE OUTLINE
半 导体 O R
固 电 UC T
ON D
E M IC
GE S
H A N
INC
Fig.2 Outline dimensions