Transistors with built-in Resistor

UN2221/2222/2223/2224
Silicon NPN epitaxial planer transistor +0.2
2.8 –0.3
Unit: mm

+0.25
0.65±0.15 1.5 –0.05 0.65±0.15
For digital circuits

■ Features

1.45
0.95
1

2.9 –0.05

1.9±0.2
Costs can be reduced through downsizing of the equipment and

+0.2
●

0.95
reduction of the number of parts. 3

0.4 –0.05
+0.1
● Mini type package, allowing downsizing of the equipment and
2
automatic insertion through tape packing and magazine packing.

■ Resistance by Part Number

0.16 –0.06
+0.1
Marking Symbol (R1) (R2)

+0.2
1.1 –0.1
● UN2221 9A 2.2kΩ 2.2kΩ

0.8
● UN2222 9B 4.7kΩ 4.7kΩ 0.1 to 0.3

0 to 0.1
0.4±0.2
● UN2223 9C 10kΩ 10kΩ
● UN2224 9D 2.2kΩ 10kΩ
1:Base

■ Absolute Maximum Ratings (Ta=25˚C)

2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 50 V Internal Connection
Collector to emitter voltage VCEO 50 V
C
Collector current IC 500 mA R1
B
Total power dissipation PT 200 mW
R2
Junction temperature Tj 150 ˚C
E
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = 50V, IE = 0 1 µA
Collector cutoff current
ICEO VCE = 50V, IB = 0 1 µA
UN2221 5
Emitter
cutoff UN2222 IEBO VEB = 6V, IC = 0 2 mA
current UN2223/2224 1
Collector to base voltage VCBO IC = 10µA, IE = 0 50 V
Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V
Forward UN2221 40
current
UN2222 hFE VCE = 10V, IC = 100mA 50
transfer
ratio UN2223/2224 60
Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 5mA 0.25 V
Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V
Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V
Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
UN2221/2224 2.2
Input
resis- UN2222 R1 (–30%) 4.7 (+30%) kΩ
tance UN2223 10
Resistance ratio 0.8 1.0 1.2
R1/R2
UN2224 0.22

1
Transistors with built-in Resistor UN2221/2222/2223/2224

Common characteristics chart

PT — Ta
250
Total power dissipation PT (mW)

200

150

100

50

0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)

Characteristics charts of UN2221

IC — VCE VCE(sat) — IC hFE — IC

300 100 400
Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

IB=1.0mA VCE=10V
30 Forward current transfer ratio hFE
250
0.9mA
Collector current IC (mA)

10 300 Ta=75˚C
0.8mA
200
0.7mA 3

150 0.6mA 1 200

0.5mA Ta=75˚C
0.3 25˚C
100
0.4mA 25˚C
0.1 100
0.3mA
50
0.2mA 0.03 –25˚C
–25˚C
0.1mA
0 0.01 0
0 2 4 6 8 10 12 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

24 10000 100
f=1MHz VO=5V VO=0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C 3000 30
20
Output current IO (µA)

1000 10
Input voltage VIN (V)

16
300 3

12 100 1

30 0.3
8
10 0.1

4
3 0.03

0 1 0.01
0.1 0.3 1 3 10 30 100 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.3 1 3 10 30 100

Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

2
Transistors with built-in Resistor UN2221/2222/2223/2224

Characteristics charts of UN2222

IC — VCE VCE(sat) — IC hFE — IC

300 100 200
Ta=25˚C IC/IB=10

Collector to emitter saturation voltage VCE(sat) (V)

VCE=10V
30

Forward current transfer ratio hFE

250 Ta=75˚C
Collector current IC (mA)

IB=1.0mA
10 150 25˚C
200 0.9mA
0.8mA 3

0.7mA
150 1 Ta=75˚C 100
0.6mA –25˚C

0.5mA 0.3
100 25˚C
0.4mA
0.1 50
0.3mA
50
0.2mA 0.03 –25˚C
0.1mA
0 0.01 0
0 2 4 6 8 10 12 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

12 10000 100
f=1MHz VO=5V VO=0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C 3000 30
10
Output current IO (µA)

1000 10
Input voltage VIN (V)
8
300 3

6 100 1

30 0.3
4

10 0.1
2
3 0.03

0 1 0.01
0.1 0.3 1 3 10 30 100 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2223

IC — VCE VCE(sat) — IC hFE — IC

240 100 200
Ta=25˚C IC/IB=10
Ta=75˚C
Collector to emitter saturation voltage VCE(sat) (V)

VCE=10V
Forward current transfer ratio hFE

30
200 25˚C
Collector current IC (mA)

10 150

160 IB=1.0mA
0.9mA 3
0.8mA

120 1 100
Ta=75˚C
0.7mA
0.6mA
0.3 25˚C –25˚C
80 0.5mA
0.4mA 0.1 50
0.3mA
40 –25˚C
0.2mA 0.03
0.1mA
0 0.01 0
0 2 4 6 8 10 12 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

3
Transistors with built-in Resistor UN2221/2222/2223/2224

Cob — VCB IO — VIN VIN — IO

12 10000 100
f=1MHz VO=5V VO=0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C 3000 30
10

Output current IO (µA)

1000 10

Input voltage VIN (V)

8
300 3

6 100 1

30 0.3
4

10 0.1

2
3 0.03

0 1 0.01
0.1 0.3 1 3 10 30 100 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2224

IC — VCE VCE(sat) — IC hFE — IC

300 100 200
Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

VCE=10V

Forward current transfer ratio hFE

30
250 Ta=75˚C 25˚C
Collector current IC (mA)

10 150

200 IB=1.0mA
0.9mA 3
–25˚C
0.8mA
150 0.7mA 1 100
Ta=75˚C
0.6mA
0.5mA 0.3
100
25˚C
0.4mA
0.1 50
0.3mA
50
0.2mA
0.03 –25˚C
0.1mA
0 0.01 0
0 2 4 6 8 10 12 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

12 10000 1000
f=1MHz VO=5V VO=0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C 3000 300
10
Output current IO (µA)

1000 100
Input voltage VIN (V)

8
300 30

6 100 10

30 3
4

10 1
2
3 0.3

0 1 0.1
0.1 0.3 1 3 10 30 100 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)