Transistors with built-in Resistor

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
Unit: mm
For digital circuits +0.2
2.8 –0.3
+0.25
0.65±0.15 1.5 –0.05 0.65±0.15

■ Features

1.45
● Costs can be reduced through downsizing of the equipment and

0.95
1

2.9 –0.05

1.9±0.2
+0.2
reduction of the number of parts.

0.95
3
● Mini type package, allowing downsizing of the equipment and

0.4 –0.05
+0.1
automatic insertion through tape packing and magazine packing. 2

■ Resistance by Part Number

0.16 –0.06
+0.1
+0.2
1.1 –0.1
Marking Symbol (R1) (R2)

0.8
● UN2111 6A 10kΩ 10kΩ 0.1 to 0.3

0 to 0.1
● UN2112 6B 22kΩ 22kΩ 0.4±0.2

● UN2113 6C 47kΩ 47kΩ

1:Base
● UN2114 6D 10kΩ 47kΩ 2:Emitter EIAJ:SC-59
● UN2115 6E 10kΩ — 3:Collector Mini Type Package
● UN2116 6F 4.7kΩ —
● UN2117 6H 22kΩ —
● UN2118 6I 0.51kΩ 5.1kΩ
● UN2119 6K 1kΩ 10kΩ Internal Connection
● UN2110 6L 47kΩ —
● UN211D 6M 47kΩ 10kΩ C
R1
● UN211E 6N 47kΩ 22kΩ B
● UN211F 6O 4.7kΩ 10kΩ
R2
● UN211H 6P 2.2kΩ 10kΩ
E
● UN211L 6Q 4.7kΩ 4.7kΩ
● UN211M EI 2.2kΩ 47kΩ
● UN211N EW 4.7kΩ 47kΩ
● UN211T EY 22kΩ 47kΩ
● UN211V FC 2.2kΩ 2.2kΩ
● UN211Z FE 4.7kΩ 22kΩ

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter Symbol Ratings Unit

Collector to base voltage VCBO –50 V
Collector to emitter voltage VCEO –50 V
Collector current IC –100 mA
Total power dissipation PT 200 mW
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

1
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
ICBO VCB = –50V, IE = 0 – 0.1 µA
Collector cutoff current
ICEO VCE = –50V, IB = 0 – 0.5 µA
UN2111 – 0.5
UN2112/2114/211E/211D/211M/211N/211T – 0.2
UN2113 – 0.1
Emitter UN2115/2116/2117/2110 – 0.01
cutoff IEBO VEB = –6V, IC = 0 mA
current UN211F/211H –1.0
UN2119 –1.5
UN2118/211L/211V –2.0
UN211Z – 0.4
Collector to base voltage VCBO IC = –10mA, IE = 0 –50 V
Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V
UN2111 35
UN2112/211E 60
UN2113/2114/211M 80
Forward UN2115*/2116*/2117*/2110* 160 460
current
transfer UN2119/211F/211D/211H hFE VCE = –10V, IC = –5mA 30
ratio UN2118/211L 20
UN211N/211T 80 400
UN211V 6 20
UN211Z 60 200
Collector to emitter saturation voltage IC = –10mA, IB = – 0.3mA – 0.25 V
VCE(sat)
UN211V IC = –10mA, IB = –1.5mA – 0.07 – 0.25 V
Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V
Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2
UN2113 VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2
VOL V
UN211D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2
UN211E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2
Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
UN2111/2114/2115 10
UN2112/2117/211T 22

Input UN2113/2110/211D/211E 47
resis- UN2116/211F/211L/211N/211Z R1 (–30%) 4.7 (+30%) kΩ
tance
UN2118 0.51
UN2119 1
UN211H/211M/211V 2.2

* hFE rank classification (UN2115/2116/2117/2110)

Rank Q R S
hFE 160 to 260 210 to 340 290 to 460

2
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

■ Electrical Characteristics (continued) (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
UN2111/2112/2113/211L 0.8 1.0 1.2
UN2114 0.17 0.21 0.25
UN2118/2119 0.08 0.1 0.12
UN211D 4.7
UN211E 2.14
Resis-
tance UN211F/211T R1/R2 0.47
ratio UN211H 0.17 0.22 0.27
UN211M 0.047
UN211N 0.1
UN211V 1.0
UN211Z 0.21

3
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Common characteristics chart

PT — Ta
250
Total power dissipation PT (mW)

200

150

100

50

0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)

Characteristics charts of UN2111

IC — VCE VCE(sat) — IC hFE — IC

–160 –100 160
IC/IB=10
VCE= –10V Ta=75˚C
Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C
IB=–1.0mA
–140 –30 Forward current transfer ratio hFE
–0.9mA 25˚C
Collector current IC (mA)

–120 –10 120

–0.8mA

–100 –0.7mA –3 –25˚C

–0.6mA
–80 –0.5mA –1 80
–0.4mA
–60 –0.3 Ta=75˚C
–0.3mA 25˚C
–40 –0.1 40
–0.2mA
–25˚C
–20 –0.03
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

4
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN2112

IC — VCE VCE(sat) — IC hFE — IC

–160 –100 400
IC/IB=10
VCE= –10V

Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C
IB=–1.0mA

Forward current transfer ratio hFE

–140 –30
–0.9mA
–0.8mA
Collector current IC (mA)

–120 –0.7mA –10 300

–0.6mA
–100 –3
–0.5mA
Ta=75˚C
–80 –0.4mA –1 200
25˚C

–60 –0.3mA –0.3 Ta=75˚C –25˚C

25˚C

–40 –0.2mA –0.1 100

–25˚C
–20 –0.1mA –0.03

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10

4
Input voltage VIN (V)
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2113

IC — VCE VCE(sat) — IC hFE — IC

–160 –100 400
IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

IB=–1.0mA Ta=25˚C VCE= –10V

–140
Forward current transfer ratio hFE

–0.9mA –30
–0.8mA
Collector current IC (mA)

–0.7mA Ta=75˚C
–120 –10 300
–0.6mA
–0.5mA
–100 –3 25˚C

–80 –0.4mA –1 200

–25˚C
–60 –0.3mA –0.3 Ta=75˚C
25˚C

–40 –0.2mA –0.1 100

–25˚C
–20 –0.1mA –0.03

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

5
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5

Output current IO (µA)

–1000 –10

Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2114

IC — VCE VCE(sat) — IC hFE — IC

–160 –100 400
IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C VCE= –10V

–140

Forward current transfer ratio hFE

–30
IB=–1.0mA
–0.9mA
Collector current IC (mA)

–120 –0.8mA –10 300

–0.7mA
–0.6mA
–100 –3
–0.5mA Ta=75˚C

–80 –0.4mA –1 200

25˚C
–60 –0.3mA
–0.3 Ta=75˚C
–0.2mA –25˚C
–40 –0.1 25˚C 100

–0.1mA
–20 –0.03
–25˚C
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –1000
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –300
5
Output current IO (µA)

–1000 –100
Input voltage VIN (V)

4
–300 –30

3 –100 –10

–30 –3
2

–10 –1

1
–3 –0.3

0 –1 –0.1
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

6
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN2115

IC — VCE VCE(sat) — IC hFE — IC

–160 –100 400
IC/IB=10

Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C VCE= –10V
–140 IB=–1.0mA –30

Forward current transfer ratio hFE

–0.9mA
–0.8mA
Collector current IC (mA)

–120 –0.7mA –10 300

–0.6mA Ta=75˚C
–100 –0.5mA –3

–0.4mA
–80 –1 200 25˚C
–0.3mA
–60 –0.3 Ta=75˚C
–0.2mA –25˚C
25˚C
–40 –0.1 100
–0.1mA
–20 –0.03
–25˚C
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
4
Input voltage VIN (V)
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1
1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2116

IC — VCE VCE(sat) — IC hFE — IC

–160 –100 400
IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C VCE= –10V

IB=–1.0mA
–140
Forward current transfer ratio hFE

–30
–0.9mA
–0.8mA
Collector current IC (mA)

–120 –10 300

–0.7mA
Ta=75˚C
–100 –0.6mA –3
–0.5mA
–80 –0.4mA –1 200
25˚C

–60 –0.3mA –0.3 Ta=75˚C

25˚C –25˚C
–40 –0.2mA –0.1 100

–20 –0.1mA –0.03 –25˚C

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

7
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5

Output current IO (µA)

–1000 –10

Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2117

IC — VCE VCE(sat) — IC hFE — IC

–120 –100 400
Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

VCE= –10V
–30

Forward current transfer ratio hFE

–100 IB=–1.0mA
–0.9mA
Collector current IC (mA)

–0.8mA –10 300

–0.7mA
–80 –0.6mA
–0.5mA –3
–0.4mA
Ta=75˚C
–60 –1 200 Ta=75˚C

–0.3mA –0.3 25˚C

–40 25˚C
–0.2mA
–0.1 100
–25˚C
–20 –0.1mA –25˚C
–0.03

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2
–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

8
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN2118

IC — VCE VCE(sat) — IC hFE — IC

–240 –100 160
Ta=25˚C IC/IB=10

Collector to emitter saturation voltage VCE(sat) (V)

VCE= –10V

Forward current transfer ratio hFE

–30
–200
Collector current IC (mA)

IB=–1.0mA –10 120

–0.9mA
–160
–0.8mA –3
–0.7mA
Ta=75˚C
–120 –1 80
25˚C
Ta=75˚C
–0.6mA –0.3 –25˚C
–80 –0.5mA
25˚C
–0.4mA
–0.1 40
–0.3mA
–40 –0.2mA
–0.03 –25˚C
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
4
Input voltage VIN (V)
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1
1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2119

IC — VCE VCE(sat) — IC hFE — IC

–240 –100 160
Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

VCE= –10V
Forward current transfer ratio hFE

–30
–200
Collector current IC (mA)

IB=–1.0mA –10 120

–0.9mA
–160
–0.8mA Ta=75˚C
–3
–0.7mA
–120 –1 80
Ta=75˚C 25˚C
–25˚C
–0.3
–80 –0.6mA 25˚C
–0.5mA
–0.1 40
–0.4mA
–40 –0.3mA
–0.03 –25˚C
–0.2mA
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

9
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5

Output current IO (µA)

–1000 –10

Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2
–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN2110

IC — VCE VCE(sat) — IC hFE — IC

–120 –100 400
Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

VCE= –10V
IB=–1.0mA
–0.9mA

Forward current transfer ratio hFE

–30
–100 –0.8mA
Collector current IC (mA)

–0.7mA
–0.6mA –10 300
–0.5mA Ta=75˚C
–80 –0.4mA
–0.3mA –3

–60 –1 200 25˚C

Ta=75˚C
–0.2mA –25˚C
–0.3
–40 25˚C

–0.1mA –0.1 100

–20
–0.03 –25˚C

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2
–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

10
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN211D

IC — VCE VCE(sat) — IC hFE — IC

–60 –100 160
IB=–1.0mA Ta=25˚C IC/IB=10

Collector to emitter saturation voltage VCE(sat) (V)

–0.9mA VCE= –10V
–0.8mA

Forward current transfer ratio hFE

–30
–50
Collector current IC (mA)

Ta=75˚C
–10 120

–40
–3
25˚C
–0.3mA
–30 –1 80 –25˚C
–0.2mA
–0.7mA
–0.6mA Ta=75˚C
–0.5mA –0.3
–20 –0.4mA
25˚C
–0.1 40
–0.1mA
–10
–0.03 –25˚C

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
Input voltage VIN (V)
4
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN211E

IC — VCE VCE(sat) — IC hFE — IC

–60 –100 400
IB=–1.0mA Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

–0.9mA VCE=–10V
–0.8mA –0.7mA –30
Forward current transfer ratio hFE

–50
Collector current IC (mA)

–10 300

–40
–3
–0.3mA

–30 –0.2mA –1 200

–0.6mA Ta=75˚C
–0.5mA
–0.4mA –0.3 Ta=75˚C
25˚C
–20 –0.1mA
–0.1 100 25˚C
–25˚C
–10
–0.03 –25˚C

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

11
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Ta=25˚C
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C
Ta=25˚C –3000 –30
5

Output current IO (µA)

–1000 –10

Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2
–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN211F

IC — VCE VCE(sat) — IC hFE — IC

–240 –100 160
Ta=25˚C IC/IB=10
Collector to emitter saturation voltage VCE(sat) (V)

VCE= –10V

Forward current transfer ratio hFE

–30
–200 IB=–1.0mA
–0.9mA
Collector current IC (mA)

–0.8mA –10 120

–0.7mA
–160 Ta=75˚C
–0.6mA
–3
25˚C
–120 –1 80
–25˚C
Ta=75˚C
–0.5mA –0.3
–80 25˚C
–0.4mA
–0.1 40
–0.3mA
–40
–0.2mA
–0.03 –25˚C
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –0.1 –0.3 –1 –3 –10 –30 –100 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C –3000 –30
5
Output current IO (µA)

–1000 –10
Input voltage VIN (V)

4
–300 –3

3 –100 –1

–30 –0.3
2

–10 –0.1

1
–3 –0.03

0 –1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

12
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN211H

IC — VCE VCE(sat) — IC hFE — IC

–120 –100 240
Ta=25˚C IC/IB=10 VCE=–10V

Collector to emitter saturation voltage VCE(sat) (V)

Forward current transfer ratio hFE

–100 200
Collector current IC (mA)

–10
–80 IB=–0.5mA 160

–0.4mA Ta=75˚C
–60 –1 120
25˚C
–0.3mA Ta=75˚C
–40 80
25˚C
–25˚C
–0.2mA –0.1
–20 –25˚C 40
–0.1mA

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 –300 –1000 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB VIN — IO

6 –100
f=1MHz VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C
Ta=25˚C
5

–10
Input voltage VIN (V)

3 –1

–0.1

0 –0.01
–1 –3 –10 –30 –100 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Output current IO (mA)

Characteristics charts of UN211L

IC — VCE VCE(sat) — IC hFE — IC

–240 –100 240
Ta=25˚C IC/IB=10 VCE= –10V
Collector to emitter saturation voltage VCE(sat) (V)

–30
Forward current transfer ratio hFE

–200 200
Collector current IC (mA)

–10

–160 160
–3

IB=–1.0mA
–120 –1 120
–0.8mA Ta=75˚C
Ta=75˚C
–0.3 25˚C
–80 –0.6mA 80 25˚C
–25˚C
–0.1
–0.4mA –25˚C
–40 40
–0.03
–0.2mA

0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 –300 –1000 –1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

13
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Cob — VCB VIN — IO

6 –100
f=1MHz VO= –0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C
Ta=25˚C
5

–10

Input voltage VIN (V)

4

3 –1

–0.1

0 –0.01
–1 –3 –10 –30 –100 –0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V) Output current IO (mA)

Characteristics charts of UN211M

IC — VCE VCE(sat) — IC hFE — IC

240 –10 500
Ta=25˚C IC/IB=10 VCE= –10V
Collector to emitter saturation voltage VCE(sat) (V)

–3 Forward current transfer ratio hFE

200
IB=–1.0mA 400
Collector current IC (mA)

–0.9mA –1
–0.8mA
–0.7mA
160 –0.6mA
–0.3 Ta=75˚C 300
25˚C
120 –0.1
Ta=75˚C
200
–0.5mA –0.03 –25˚C 25˚C
80
–0.4mA –25˚C
–0.01
–0.3mA
100
40 –0.2mA
–0.003
–0.1mA
0 –0.001 0
0 –2 –4 –6 –8 –10 –12 –1 –3 –10 –30 –100 –300 –1000 –1 –3 –10 –30 –100 –300 –1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

10 10–4 –100
VO=–5V VO=–0.2V
f=1MHz Ta=25˚C
Collector output capacitance Cob (pF)

Ta=25˚C
IE=0
–30
Ta=25˚C
8
Output current IO (µA)

10–3 –10
Input voltage VIN (V)

–3
6

10–2 –1

4
–0.3

10–1 –0.1
2
–0.03

0 1 –0.01
–0.1 –0.3 –1 –3 –10 –30 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –0.3 –1 –3 –10 –30 –100

Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

14
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN211N

IC — VCE VCE(sat) — IC hFE — IC

–200 –10 300
IC/IB=10 VCE= –10V

Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C
–175

Forward current transfer ratio hFE

250
Collector current IC (mA)

Ta=75˚C
–150 IB=–1.0mA
–1 200
–125 –0.9mA
–0.8mA 25˚C
–0.7mA
–100 –0.6mA 150
–25˚C
Ta=75˚C
–0.5mA
–75 25˚C
–0.4mA –0.1 100

–50 –0.3mA –25˚C

–0.2mA 50
–25
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –1 –10 –100 –1000 –1 –10 –100 –1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C
5
Output current IO (µA)

–1000 –10

4 Input voltage VIN (V)

3 –100 –1

–10 –0.1

0 –1 –0.01
–1 –10 –100 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –0.1 –1 –10 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN211T

IC — VCE VCE(sat) — IC hFE — IC

–200 –10 300
IC/IB=10 VCE=–10V
Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C
–175
Forward current transfer ratio hFE

250
Collector current IC (mA)

Ta=75˚C
–150
IB=–1.0mA
–1 200
–125 –0.9mA 25˚C
–0.8mA
–100 –0.7mA 150
–0.6mA Ta=75˚C
–0.5mA –25˚C
–75
–0.4mA –0.1 25˚C 100

–50 –0.3mA

–0.2mA –25˚C 50
–25
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –1 –10 –100 –1000 –1 –10 –100 –1000
Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

15
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

IO — VIN VIN — IO
–10000 –100
VO=–5V VO= –0.2V
Ta=25˚C Ta=25˚C
Output current IO (µA)

–1000 –10

Input voltage VIN (V)

–100 –1

–10 –0.1

–1 –0.01
–0.4 –0.6 –0.8 –1 –1.2 –1.4 –0.1 –1 –10 –100
Input voltage VIN (V) Output current IO (mA)

Characteristics charts of UN211V

IC — VCE VCE(sat) — IC hFE — IC

–12 –10 12
Ta=25˚C IC/IB=10 VCE=–10V
Collector to emitter saturation voltage VCE(sat) (V)

Ta=75˚C

Forward current transfer ratio hFE

IB=–1.0mA
–10 10
Collector current IC (mA)

–0.9mA
25˚C
–0.8mA
–8 –1 8
–0.7mA
Ta=75˚C –25˚C
–6 –0.6mA 6

–0.5mA 25˚C
–4 –0.1 4
–0.4mA
–25˚C
–0.3mA
–2 2
–0.2mA
–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –1 –10 –100 –1000 –1 –10 –100

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

IO — VIN VIN — IO
–10000 –100
VO=–5V VO= –0.2V
Ta=25˚C Ta=25˚C
Output current IO (µA)

–1000 –10
Input voltage VIN (V)

–100 –1

–10 –0.1

–1 –0.01
–0.4 –0.6 –0.8 –1 –1.2 –1.4 –0.1 –1 –10 –100
Input voltage VIN (V) Output current IO (mA)

16
 UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z

Characteristics charts of UN211Z

IC — VCE VCE(sat) — IC hFE — IC

–200 –10 300
IC/IB=10 VCE= –10V

Collector to emitter saturation voltage VCE(sat) (V)

Ta=25˚C

Forward current transfer ratio hFE

–175
250
Collector current IC (mA)

–150
IB=–1.0mA –1 200 Ta=75˚C
–125
–0.9mA
25˚C
–0.8mA
–100 150
–0.7mA Ta=75˚C
–0.6mA
–75 –0.5mA –25˚C
–0.1 25˚C 100
–0.4mA
–50
–0.3mA –25˚C
50
–25 –0.2mA

–0.1mA
0 –0.01 0
0 –2 –4 –6 –8 –10 –12 –1 –10 –100 –1000 –1 –10 –100 –1000

Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA)

Cob — VCB IO — VIN VIN — IO

6 –10000 –100
f=1MHz VO=–5V VO=–0.2V
Collector output capacitance Cob (pF)

IE=0 Ta=25˚C Ta=25˚C

Ta=25˚C
5
Output current IO (µA)

–1000 –10
Input voltage VIN (V)
4

3 –100 –1

–10 –0.1

0 –1 –0.01
–1 –10 –100 –0.4 –0.6 –0.8 –1 –1.2 –1.4 –0.1 –1 –10 –100
Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA)

17