Assignment 1: Q1, Q2, Q16.

Due date: 12th November 2021;

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1. The electron concentration in a semiconductor that is not degenerately doped is: 𝑛 = 𝑁 𝑒
a. Re-write the expression as it applies to an N-type semiconductor doped with Nd donors per cubic
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centimetre and has Fermi Level EFN. [1 Mark] 𝑁 = 𝑁 𝑒
b. Re-write the expression as it applies to an intrinsic semiconductor with Fermi Level EFi. [1 Mark]
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𝑛 = 𝑁 𝑒
c. Hence derive an expression for the difference between the Fermi level in N-type and intrinsic
semiconductors. [3 Marks]
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Divide the equation in (a) by the equation in (b): = ; =𝑒 ;

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(𝐸 − 𝐸 ) = 𝑘𝑇 ln . Also Note: Fermi Potential, 𝜑 = = ln
d. Sketch the energy band diagram for an N-type semiconductor, indicating: vacuum level, EV, EC, EFN,
EFi, electron affinity, (χ) and the work function, φN. Derive an expression for the work function in
terms of χ k, T, q and Nd. [7 Marks]
1(d): [3 Marks] From the diagram:
𝑞𝜑 = 𝑞𝜒 + − 𝑞𝜑 Where:

𝑞𝜑 = (𝐸 − 𝐸 ) = 𝑘𝑇 ln ; and
𝑞𝜑 = 𝐸 − 𝐸 = 𝐸 . Substituting:
𝑞𝜑 𝑘𝑇 𝑁
𝜑 =𝜒 + − ln
2 𝑞 𝑛
2(d): [3 Marks] From the diagram:
𝑞𝜑 = 𝑞𝜒 + + 𝑞𝜑 Where:

𝑞𝜑 = (𝐸 − 𝐸 ) = −𝑘𝑇 ln ; and
𝑞𝜑 = 𝐸 − 𝐸 = 𝐸 . Substituting:
𝑞𝜑 𝑘𝑇 𝑁
[4 Marks] Each. 𝜑 =𝜒 + + ln
2 𝑞 𝑛
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2. The hole concentration in a semiconductor that is not degenerately doped is: 𝑝 = 𝑁 𝑒
a. Re-write the expression as it applies to a P-type semiconductor doped with Na acceptors per cubic
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centimetre and has Fermi Level EFP. [1 Mark] 𝑁 = 𝑁 𝑒
b. Re-write the expression as it applies to an intrinsic semiconductor with Fermi Level EFi. [1 Mark]
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𝑛 = 𝑁 𝑒
c. Hence derive an expression for the difference between the Fermi level in N-type and intrinsic
semiconductors. [3 Marks]
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Divide the equation in (b) by the equation in (a): = ; =𝑒 ;

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(𝐸 − 𝐸 ) = −𝑘𝑇 ln . Also Note: Fermi Potential, 𝜑 = =− ln
 d. Sketch the energy band diagram for a P-type semiconductor, indicating: vacuum level, EV, EC, EFP, EFi,
electron affinity, (χ) and the work function, φP. Derive an expression for the work function in terms of
χ k, T, q and Na. [7 Marks] (See at 1(d)).
3. An ideal NPN transistor has the following parameters in emitter, base and collector respectively: doping
concentrations: 1018, 1017 and 5x1015 cm-3; minority carrier lifetimes: 10-8, 10-7 and 5x10-6 s; diffusion
constants: 1, 10 and 2 cm2s-1. The effective width of base is 0.5μm. Assume that the effective width of the
emitter is longer than minority carrier diffusion length and the base transport factor is 1. The transistor is
biased with VBE = 0.6V. Determine:
a. What behaviour of carriers in the base results in a base transport factor of 1? [1 Mark]
There is no carrier recombination in the base.
b. Emitter electron current. [4 Marks]
Diffusion length of holes in base, 𝐿 = 𝐷 𝜏 = √10 × 10 = 10 cm. WB = 0.5μm = 5 x 10-5cm.
𝑊 <𝐿 hence a short diode base. Assuming semiconductor is silicon, ni = 1010cm-3.
.
. × × ×
𝐼 , = 𝑒 − 1 . The -1 can be ignored. 𝐼 , =𝐴 × ×𝑒 . =
× ×
0.368ABE A,
c. Emitter hole current [3 Marks]
Diffusion length of holes in emitter, 𝐿 = 𝐷 𝜏 = √10 × 1= 10-4cm.
.
. × × ×
𝐼 , = 𝑒 − 1 . The -1 can be ignored. 𝐼 , =𝐴 × ×𝑒 . =
×

1.84ABE x 10-3 A,

d. Collector electron current [1.5 Marks]

Is equal to emitter electron current since base transport factor is 1. IC,n = 0.368ABE A .
e. The transistor alpha. [1.5 Marks]
α = IC,n /( IE,n + IE,p) = 0.368ABE /(0.368ABE + 1.84ABE x 10-3) = 0.995
f. The transistor beta. [2 Marks]
β = IC / IB. Since base transport factor =1, IB = 𝐼 , . And IC = IE,n . β = IC / IB = 0.368ABE /1.84ABE x 10-3 =
200.