EEE 2212 Physical Electronics II ; Continuous Assessment Test I; 5th March 2024 Time: 45 Minutes

Reference Information
1.24 −19
𝐸(eV) = 𝜆(μm); 1eV = 1.6 × 10 Joules; 1W = 1 Joule per Second; 𝑝𝑛 − 𝑝𝑛𝑜 = 𝐺𝐿 𝜏𝑝 ; 𝑛𝑝 − 𝑛𝑝𝑜 = 𝐺𝐿 𝜏𝑛

1. A piece of semiconductor of volume 2.4 × 10-5cm3 has minority carrier lifetime of 10μs. It is illuminated with light
of wavelength 410nm and total optical power of 10mW. 40% of the incident photons are absorbed and produce
electron-hole pairs. (Assume Eg ≤ Eph).
a. Determine the photon energy for the incident light and hence the number of incident photons per second.
[5 Marks]
E = hc/λ; λ= 410μm = 0.41nm. E(eV) = 1.24/λ(μm) = 1.24/0.41 = 3.02eV. [2 Mks] In Joules, E = 3.02 × 1.6 ×
10-19 = 4.84 × 10-19 Joules. [1 Mks] Total incident power = 10mW = 0.01W = 0.01 Js-1. [1 Mks] Incident photons
= 0.01/4.84 × 10-19 = 2.07 × 1016 s-1. [1 Mks]
b. Determine the rate of carrier generation GL (in electron-hole pairs cm-3 s-1). [4 Marks]
40% of photons are absorbed and generate EHP. Total photons absorbed = 0.4 × 2.07 × 10 s = 8.27 × 1015 s-
16 -1

1
. [1.5 Mks] Photons absorbed per unit volume = 8.27 × 1015 s-1/(2.4 × 10-5cm3) = 3.44 × 1020 cm-3s-1. [1.5 Mks]
. Each photon generates one electron hole pair. GL = 3.44 × 1020 cm-3s-1. [1 Mks]
c. Determine the concentration of photo-generated carriers after a long exposure. What assumption have you
made? [2 Marks]
After a long exposure, concentration = GLτ = (3.44 × 1020 cm-3s-1) (10 × 10-6 s ) = 3.44 × 1015 cm-3. Assumed
Low Level Injection conditions.
2. State the differences between LED and laser diode in terms of operation and light output. [3 Marks]
Emission is spontaneous for LED and stimulated for laser diode; Bandwidth for laser is smaller than for LED;
Beam width is narrower in laser than in LED; Emitted photons are in phase for laser but not for LED; Intensity
of emitted light is higher in laser than in LED. [Any 3 1 Mk each]
3. Figure Q3 shows the cross-section of a photo-diode
a. Identify the items labelled i, ii and iii. [3 Marks]
b. With reference to the roles of the items i, ii and iii, explain how
the dimensions, doping concentration and other construction
features of a photo-diode are selected in order to improve the
performance of the device. [5 Marks]
Item (i) is thin and more heavily doped than (ii). [2 Mks] Depletion
Figure Q3 region is mostly on the N-side, which is at the penetration depth. This
(a) (i)P-side of diode; (ii)N-side of allows light to generate carriers in the depletion region where the build-
diode; (iii)anti-reflection coating. [1 in potential separates the carriers. [2 Mks]; Item (iii) has high reflection
Mks] each. index, reduces reflection of incident light. [1 Mk]
c. Explain why in normal operation, a photo-diode is in reverse biased while an LED is forward biased. [2 Marks]
Reverse biased PN junction has carrier extraction, which separates holes and electrons. For photo-diode, the
generated holes and electrons need to be separated so that they do not recombine. [1 Mk] For LED, holes and
electrons need to be injected and brought together so that they combine and emit photons. This happens in a
forward biased junction where carriers are injected across the depletion region. [1 Mk]
4. List and state the purpose of the components that would be required in a solar energy installation. [6 Marks]
Solar panel – captures solar energy and converts it into electrical energy; DC batteries – store the electrical energy
for use when sun is not shining; Charger - Controls the charging of the batteries for energy storage; Inverter –
conversion of energy to AC to allow use of standard appliances. [Any 3 items with purpose. 6 Marks]