UNIT 6: Introduction to engineering materials

LECTURE 6

Prof. Reji Thomas DRC-DRD December 8, 2023

 2 Dielectric material

Polar Dielectric Nonpolar Dielectric

a) Center of mass +ve and –ve charges
are displaced
b) Permanent electric dipole
c) Polarization is temperature
dependent
a) Center of mass of +ve and –ve
charges is at the same point
b) Induced electric dipole
c) Polarization independent of
temperature

Eg. H2O, NaCl, HCl. BaTiO3, PbTiO3 e.g., Mica, H2, O2 CO2
Reji Thomas DRD-DRC December 8, 2023
Classification Polar dielectrics
3

1. Dielectric: Insulator with very low

electrical conductivity
2. Piezoelectric- Polarization changes with
stress/pressure
3. Pyroelectric-Polarization changes with
stress and temperature
4. Ferroelectric: Polarization changes with
stress, temperature and electric field

r − 1 𝑁 Clasius-Mosotti equation for linear dielectric.

=
r + 2 3𝜀0
= 𝛼𝑒 + 𝛼𝑖 + 𝛼𝑜
Prof. Reji Thomas DRC-DRD December 8,
 Classification of magnetic materials
4

Magnetic properties are present in metal, insulators and semiconductors.

Magnetic Materials

1. Paramagnetic materials Magnetic levitation

2. Diamagenetic materials a) Soft magnetic
3. Ferromagnetic materials material
4. Anti-ferromagnetic b) Hard magnetic
materials material
5. Ferrimagnetic materials
6. Superparamagnetic
materials

Reji Thomas DRD-DRC December 8, 2023

5

Reji Thomas DRD-DRC December 8, 2023

 Piezoelectric effect
✓ Uses piezoelectric material, e.g. Quartz, Tourmaline, Rochelle salt, PZT
✓ Piezoelectricity, inverse piezoelectricity

When a mechanical stress applied electric charges are developed at the two faces
along the perpendicular direction- direct piezoelectric effect
When an electric field applied, a mechanical stress is developed at the two faces
along the perpendicular direction- indirect piezoelectric effect

Prof. Reji Thomas DRC-DRD December 8, 2023

Inverse Piezoelectric effect Direct Piezoelectric effect

used in
used in
Ultrasonic
Ultrasonic
generators
detectors

Prof. Reji Thomas DRC-DRD December 8, 2023

 Superconductivity
8

➢ Dutch physicist Heike Kamerlingh Onnes did

liquefaction of Helium (He) in 1908 at temperature
as low as 4K. Era of low temperature or cryogenic
started

➢ Himself, later discovered Superconductivity in

1911 in a chilled mercury (Hg) wire at a
temperature at 4.19° above absolute zero, or 4.19 K.
Thus superconductivity was born in 1911

➢ Kamerlingh Onnes won Noble prize in physics in

Heike Kamerlingh Onnes 1913 for the discovery.
1853-1926

Reji Thomas DRD-DRC December 8, 2023

 In subsequent years, superconductivity was found in several other
materials;
9 ▪ 1913, lead at 7 K,
▪ 1930's niobium at 10 K, All are metallic at room
temperature.
▪ 1941 niobium nitride at 16 K.

Tc is the critical temperature. However all metal are not superconductors at low
temperature Reji Thomas DRD-DRC December 8, 2023
 Tuyn’s Law

Reji Thomas DRD-DRC December 8, 2023

 Meissner effect
11

When sample is placed in a magnetic field, magnetic

flux can pass through the material if it is
paramagnetic material Fig.(a) and repel the flux in a
diamagnetic material (Fig b). This we learned in
Unit3- magnetic properties of materials
Diamagnetic material: Magnetization is opposite to
the applied magnetic field
In paramagnetic material: Magnetization is in the
same direction as the applied field.
(a) (b)

Meisner effect is about the behaviour of a superconducting material

in a magnetic field and that is less than the critical magnetic field at a
particular temperature where the material is superconducting.

Prof. Reji Thomas DRC-DRD December 8, 2023

The Meissner effect (or Meissner–Ochsenfeld effect) is the expulsion of a magnetic
field from a superconductor during its transition to the superconducting state when
it is cooled below the critical temperature.
From what we learned in Unit 3, it is a diamagnetic effect. Superconducting
12
material is diamagnetic at superconducting state!!.
Meissner effect

H > Hc
Induced magnetic field in the blue region when T < Tc is zero; 𝐵 = 𝜇0 𝐻 + 𝑀 = 0

𝑀 = −𝐻
Magnetization in the opposite direction of the applied field. That is the case of
diamagnetism

Reji Thomas DRD-DRC December 8, 2023

 Classification of Superconductors

13

Depending on the superconducting temperature or the critical temperatures we

already know from the last lecture that superconductors can be classified into two
groups.

1. Low temperature superconductors

❑ Those materials whose critical temperatures are below 30 K and Liquid
Helium must be used to make them superconductor.
❑ Metals and alloys come under this class.
❑ Conventional superconductors, all can be explained with BCS theory
❑ Metallic at room temperature

2. High temperature superconductors

❖ Those materials whose critical temperatures are above 77K and Liquid
Nitrogen is enough to make them superconductor.
❖ Ceramics like Cuprates (LBCO, YBCO) and Fe based oxides
❖ Unconventional superconductors, all can’t be explained with BCS theory
❖ They are insulators at room temperature
Prof. Reji Thomas DRC-DRD December 8, 2023
On the basis of magnetising behaviour of the superconducting material
it is classified into Type-I (Soft) and Type-II (Hard) superconductors
14

1. Type-I (soft) Superconductors

This type superconductors obeys complete Meissner
effect. It expels all the magnetic field abruptly from the
interior and becomes an ‘ideal diamagnetic material’.

Magnetization (-M)
▪ Magnetisation produced in the superconductor
remains in the direction opposite to the applied
magnetic field.
▪ At the critical applied magnetic field (Hc),
magnetization decreases abruptly and the material
becomes normal
▪ For magnetic field above Hc, the magnetic flux
penetrate completely inside the material
▪ It is a first order phase transition
▪ Examples: Pb, Sn, Hg

Prof. Reji Thomas DRC-DRD December 8, 2023

2. Type-II (hard) Superconductors

In15 this kind of material Magnetization looses gradually rather than abruptly. After
Hc1, magnetic flux starts to penetrate into this kind of material and material become
normal with full penetration into the material at Hc2 and the material becomes non-
diamagnetic.

Magnetization (-M)
❑ Between these two critical field the
material is in mixed state
❑ In spite of the fact the magnetic field Vortex state
penetrate inside material after Hc1, the
electrical resistivity continuous to be zero
up to the magnetic field Hc2
❑ It is second or phase transition?
❑ Region between Hc and Hc2 is known as
vortex state
❑ Examples: Nb-Sn, Nb-Ti alloys

Prof. Reji Thomas DRC-DRD December 8, 2023

 Similarity and differences between type I and
type II superconductors
16

✓ There is no difference in the mechanism of superconductivity in type I and type

II superconductors. Both types have similar thermal properties at the
superconductor-normal transition in zero magnetic field.

Prof. Reji Thomas DRC-DRD December 8, 2023

What is the critical temperature in superconductivity?

a) Temperature at which conductivity becomes infinity

b) Temperature at which resistivity becomes zero
c) All of these
d) None of these

Ans :C

Reji Thomas DRD-DRC December 8, 2023

What is the boiling point of liquid Helium at atmospheric
pressure ?

a) 0K
b) 4.2K
c) 77K
d) 100K

Ans :B

Reji Thomas DRD-DRC December 8, 2023

What is boing point of liquid Nitrogen at atmospheric pressure ?

a) 0K
b) 4.2K
c) 77K
d) 100K

Ans: C

Reji Thomas DRD-DRC December 8, 2023

Poor conductors at normal conditions are better superconductors.
State true or false

a) True
b) False

Ans : A

Reji Thomas DRD-DRC December 8, 2023

21

At the superconducting temperature or below the material become

a) Ferroelectric
b) Ferromagnetic
c) Diamagnetic
d) paramagnetic

Ans : C

Reji Thomas DRD-DRC December 8, 2023

22

Which is needed liquid helium to get into superconducting state

a) Low temperature superconductors

b) High temperature superconductors

Ans : A

Reji Thomas DRD-DRC December 8, 2023

23

The Cooper pairs are

a) Bosons
b) Fermions
c) Plasmon
d) All of these

Ans : A

Reji Thomas DRD-DRC December 8, 2023

https://www.youtube.com/watch?v=O6sukIs0ozk
Prof. Reji Thomas DRC-DRD December 8, 2023
 Lecture Schedule Unit 6

Lecture 1: 24/11/2023 Dielectric materials definition, internal field (local field),

Polarizations
Lecture 2: 30/11/2023 Claussius Mossotti relation, dielectric breakdown, dielectric
loss,
Lecture 3: 1/12/2023 Magnetic materials: dia, para, ferromagnetic materials,
magnetic data storage
Lecture 4: 6/12/2023 Piezoelectric materials: direct and inverse piezoelectric
methods, materials and applications (ultrasonic
sensors),
Lecture 5: 7/12/2023 Superconducting materials: properties, Meissner effect, Type I
& Type II superconductors, applications

Lecture 6: 8/12/2023 Nanomaterials: Introduction, synthesis of nanomaterials, top

down and bottom-up approach

Prof. Reji Thomas DRC-DRD December 8, 2023

 Science of low dimensional systems- Nano-technology
26

The interest in nanoscience is a realization of a famous statement by

Feynman that "There's a Plenty of Room at the Bottom“ at Caltech on
December 29, 1959

Based on Feynman’s idea, K. E. Drexler advanced the idea of “molecular

nanotechnology” in 1986 in the book ‘Engines of Creation’, where he postulated the
concept of using nanoscale molecular structures to act in a machine like manner to
guide and activate the synthesis of larger molecules.
Prof. Reji Thomas DRC-DRD December 8, 2023
 Nanomaterials: Introduction
27

Nanotechnology is an emerging area of research which has a potential in

replacement of conventional micron technologies and gives size dependent
properties of the functional materials.

✓ When the dimension of a material is reduced from a large size, the properties
remain the same at first, then small changes occur, until finally, when the size
drops below 100 nm, dramatic changes in properties can occur.
✓ If only one dimension of a three-dimensional structure is of nanoscale, the
structure is referred to as a quantum well; if two dimensions are of nanometer
scale, the structure is referred to as a quantum wire; and if all three dimensions
are of nanometer scale, the structure is referred to as a quantum dot. Hence a
quantum dot has all three dimensions in the nanorange and is the ultimate
example of nanomaterials.
✓ The word ‘quantum’ is associated with these three types of nanostructures
because changes in properties arise from the physics of quantum-mechanics.

Prof. Reji Thomas DRC-DRD December 8, 2023

 Nanomaterials: Introduction

2D Quantum well
1D Quantum wire
0 Dimension - Quantum dots
Prof. Reji Thomas DRC-DRD December 8, 2023
29

Drastic changes in the properties of the materials occurs when

the size reduces below

a) 100 m
b) 100 cm
c) 100 m
d) 100 nm

Ans : D
Reji Thomas DRD-DRC December 8, 2023
30

If only one dimension of a three-dimensional structure is of

nanoscale, the structure is referred to as a

a) Quantum Well
b) Quantum Dot
c) Quantum Wire
d) None of these

Ans : A
Reji Thomas DRD-DRC December 8, 2023
31

When two dimension of a three-dimensional structure is of

nanoscale, then the structure is called as

a) Quantum Well
b) Quantum Dot
c) Quantum Wire
d) None of these

Ans : C
Reji Thomas DRD-DRC December 8, 2023
32

When all the three dimension of a three-dimensional structure is

of nanoscale, then the structure is called as

a) Quantum Well
b) Quantum Dot
c) Quantum Wire
d) None of these

Ans : B
Reji Thomas DRD-DRC December 8, 2023
33

The ultimate example of a nanomaterial is

a) Quantum Well
b) Quantum Dot
c) Quantum Wire
d) None of these

Ans : B
Reji Thomas DRD-DRC December 8, 2023
34

Nanoscience is the realization of a famous quote "There are

Plenty of Rooms at the Bottom“ by whom?

a) Oppenheimer
b) Feynman
c) Fermi
d) Einstein

Ans : B
Reji Thomas DRD-DRC December 8, 2023
 Top-down
approach

Bottom-up
approach

Prof. Reji Thomas DRC-DRD December 8, 2023

(b) Bottom-up approach
36

✓ The alternative approach, which has the potential of creating less waste and
hence the more economical, is the ‘bottom- up’.
✓ Bottom-up approach refers to the build up of a material from the bottom: atom-
by-atom, molecule-by-molecule, or cluster-by cluster.
✓ Many of these techniques are still under development or are just beginning to be
used for commercial production of nanopowders.
✓ Oraganometallic chemical route, revere-micelle route, sol-gel synthesis, colloidal
precipitation, hydrothermal synthesis, template assisted sol-gel,
electrodeposition etc, are some of the well- known bottom–up techniques
reported for the preparation of luminescent nanoparticles.

December 8,
Prof. Reji Thomas DRC-DRD
37
(a)Top-down approach
❑ Top-down approach involves the breaking down of the bulk material into
nanosized structures or particles.
❑ Top-down synthesis techniques are extension of those that have been used for
producing micron sized particles.
❑ Top-down approaches are inherently simpler and depend either on removal or
division of bulk material or on miniaturization of bulk fabrication processes to
produce the desired structure with appropriate properties.
❑ The biggest problem with the top-down approach is the imperfection of surface
structure.
❑ For example, nanowires made by lithography are not smooth and may contain a
lot of impurities and structural defects on its surface. Examples of such
techniques are high-energy wet ball milling, electron beam lithography, atomic
force manipulation, gas-phase condensation, aerosol spray, etc.

December 8,
Prof. Reji Thomas DRC-DRD
38
 Integrated circuits- Processors and memories
Sailing on Moore’s Law

Intel Co-founder Gordon Moorfe said in 1965 ‘number of transistors in an

integrated circuit (IC) doubles about every two years’ became a law in
semiconductor industry
Ge
Semiconductors

Low-k dielectrics
Si
Air
III-V
PtSi2 HSQ Ta2O5
WSi2 Polymer HfO2 High-k
dielectrics

Silicides
CoSi2 ZrO2

TiSi2 Zr(Hf)SixOy
▪ New structures TiN
RuO2
MoSi2 TaN
▪New materials Metals

Metals
Pt
TaSi2 Cu
IrO2
▪New deposition W
Al, SiO2 Si Si3N4 PZT Ferroelectrics
processes
Poly Si BST
Ge

1950 1970 1980 1990 2000 2010

(based on Paul C. McIntyre tutorial MRS Spring 2005)
 Speed vs. package density
MOSFET- shrinking in dimension

40

4
10

10
3 Transconductance  Cox/L
 0 r A
Cox =
Clock speed (MHz)

2
10

1
d
10

0
10
Speed  1/delay time
-1
10

-2
10
3 4 5 6 7 8 9
10 10 10 10 10 10 10
Number of transitors /chip

Nanotechnology in computers provides larger memory at lighter weight and smaller

size along with faster processor with smaller size at low operating temperatures
(power dissipation)
 Gate Dielectric Requirements- Near term
Emrl
Fachseminare-
2005 Year of production 2003 2004 2005 2006 2007 2008 2009 Driver

Technology node hp90 Hp65

DRAM ½ pitch 100 90 80 70 65 57 50 DRAM

EOT for MPU (Tox nm) 1.3 1.2 1.1 1.0 0.9 0.8 0.8 High power

EOT for LOP (Tox nm)

1.6 1.5 1.4 1.3 1.2 1.1 1.0 Low Operating Power

EOT for LSTP (Tox nm)

2.2 2.1 2.1 1.9 1.6 1.5 1.4 Low Standby Power

Source: ITRS 2003, front end process

41
 Physical limit of SiO2 gate dielectrics
leakage current vs. thickness of SiO2 and ONO
Emrl
Fachseminare-
2005

High-k dielectric is needed for the EOT scaling

Bulk SiO2 Properties (e.g. Eg) lost for
films 8Å in thickness; Nature, 399, 758-761 (1999)

Source: Kitajima, SELETE, 2004

42
 Syllabus

Dielectric materials definition, dielectric breakdown, dielectric loss,

internal field (local field), Claussius- Mossotti relation,
Magnetic materials: dia, para, ferromagnetic
materials, magnetic data storage,
Piezoelectric materials: direct and inverse piezoelectric methods,
materials and applications (ultrasonic sensors),
Superconducting materials: properties, Meissner
effect, Type I & Type II superconductors, applications,
Nanomaterials: Introduction, synthesis of nano
materials, top down and bottom-up approach

Prof. Reji Thomas DRC-DRD December 8, 2023

 PHY110 – ENGINEERING PHYSICS
44

Text Books: ENGINEERING PHYSICS by HITENDRA K MALIK AND A

K SINGH, MCGRAW HILL EDUCATION, 1st Edition, (2009)

References:
 ENGINEERING PHYSICS by B K PANDEY AND S CHATURVEDI,
CENGAGE LEARNING, 1st Edition, (2009).

 ENGINEERING PHYSICS by D K BHATTACHARYA, POONAM

TONDON OXFORD UNIVERSITY PRESS.

 FUNDAMENTALS OF PHYSICS by HALLIDAY D., RESNICK R AND

WALKER J, WILEY, 9th Edition, (2011)

Prof. Reji Thomas DRC-DRD December 8, 2023