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Transistor
What is BJT

 The bipolar junction transistor

(BJT) is constructed with three
doped semiconductor regions
separated by two pn junctions.
 The term bipolar reflects the fact
that holes and electrons contribute
to the conduction.
 Regions are called emitter, base and
collector.
Three regions of BJT
 Emitter: The emitter is heavily doped . The function of the
emitter is to emit or inject electrons (holes in case of PNP)
onto the collector.
 Base: The base is very lightly doped and very thin.
 Collector: The doping of the collector is between the heavy
doping of the emitter and the light doping of the base. The
collector has the job of collecting these electrons (or holes)
from the base.
 Types of BJT

 It can either be npn type or pnp type.

 pnp transistor is the complement of an
npn transistor, it is merely necessary
to read hole for electron, electron for
hole, negative for positive, and positive
for negative.
 3 layer semiconductor device
consisting:
2 n-type and 1 p-type layers of
material: npn transistor
2 p-type and 1 n-type layers of
material: pnp transistor
 Direction of Currents in Transistor

 In npn transistor, the emitter has

an arrowhead. The arrowhead
points in the direction of the
conventional emitter current
(from P region to N region).
 In pnp transistor, the direction of
arrowhead in the emitter. The
conventional emitter current will
flow from the emitter to the base.
That is why the direction of
arrowhead is inward (from P
region to N region).
Mode of operation for BJT
Conditio Emitter Base Collector Base Mode of Operation
n Junction Junction
FR Forward Biased Reverse Biased Active

FF Forward Biased Forward Biased Saturation

RR Reverse Biased Reverse Biased Cutoff
RF Reverse Biased Forward Biased Inverted (Reverse active)

 The active mode is the one used if the transistor is to

operate as an amplifier. It is widely used.
 Switching applications (e.g., logic circuits) utilize both the
cutoff and the saturation modes.
 The reverse active mode has very limited application but
is conceptually important.
Working of Transistor
Working of Transistor
 The emitter-base junction is forward biased and collector-
base junction is reverse biased.
 The majority charge carriers diffuse across the emitter-
base junction. The resulting current consists of electrons
travelling from the emitter to the base, and holes passing
from the base to the emitter.
 The mainly current due to movement of electrons
because of light doping in base region.
 The ratio of the electron current to the total current to
the total emitter current is know as emitter injection
ratio or emitter efficiency. It is denoted by 𝛾 and is
approximately equal to 0.995.
 Once the electrons are injected by the emitter into the base, they become
minority carriers (in the base region).
 Because of light doping in base region, most of the electrons travelling from
the emitter end of the base region to its collector end do not recombine
with holes in base.
 The ratio of the number of electrons arriving at collector to the number of
emitted electrons is know as the base transportation factor. It is denoted
by 𝛽′ and is approximately equal to 0.995.
 The movement of hole from collector to base and electron from the base
to collector constitutes reverse leakage current.
 The movement of electron from emitter to base and hole from base to
emitter constitute a part of emitter current also another type of reverse
leakage current.
 The difference of these two currents in the base region makes the base
current IB.
Relation between different currents
 The collector current is less than the emitter current. There are two reasons
for this.
 A part of the emitter current consists of holes that do not contribute to the
collector current . It is represented by emitter injection ratio, 𝛾.
 Not all the electrons injected into the base are successful in reaching the collector.
It is represented by base transport factor𝛽 ′ .
 Hence the ratio of the collector current to the emitter current is equal to 𝛽′
𝛾. This ratio is called current amplification factor, 𝛼𝑑𝑐 of the transistor and
approximately equal to 0.99.
 The emitter current is equal to the sum of collector current and base
currents.
𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵
 The collector current is made up of two parts:
 The fraction of emitter current which reaches the collector
 The normal reverse leakage current ICBO.
𝐼𝐶 = 𝛼𝑑𝑐 𝐼𝐸 + 𝐼𝐶𝐵𝑂
Three Configuration
 As the Bipolar Transistor is a three terminal device, there are
basically three possible ways to connect it within an electronic
circuit with one terminal being common to both the input and
output.
 In all the configurations, the emitter-base junction is always forward-
biased and the collector-base junction is always reverse-biased.
 Each method of connection responding differently to its input signal
within a circuit as the static characteristics of the transistor vary
with each circuit arrangement.
Transistor Characteristics
 There are two static characteristic curves that relate transistor currents
and voltages.
 Input Characteristics Curve: It relates the input current with the input
voltage, for a given output voltage.
 Output Characteristics Curve: It relates the output current with the output
voltage, for a given input current.

 Common Base Configuration - has Voltage Gain but no Current Gain.

 Common Emitter Configuration - has both Current and Voltage Gain.
 Common Collector Configuration - has Current Gain but no Voltage Gain.
Common Base (CB) Configuration
 The configuration in which
the base of the transistor is
common between emitter
and collector circuit is called
a common base
configuration.
 In common base
configuration, the input is
connected between emitter
and base while the output is
taken across collector and
base.
Current Amplification Factor
 The ratio of output current to input current is known as
a current amplification factor. In the common base
configuration, the collector current IC is the output
current, and the emitter current IE is the input current. It
is represented by α (alpha).
𝐼𝐶
𝛼=
𝐼𝐸
 The value of current amplification factor is less than
unity. The value of the amplification factor (α) reaches to
unity when the base current reduces to zero.
 The practical value of the current amplification factor
varies from 0.95 to 0.99 in the commercial transistor.
Characteristics of Common Base (CB)
Configuration
 The emitter to base voltage VEB can be varied by adjusting the
potentiometer R1. A series resistor RS is inserted in the
emitter circuit to limit the emitter current IE.
 The value of the emitter-base voltage change to a large value
even the value of a potentiometer slightly change.
 The value of collector-base voltage changes slightly by changing
the value of the potentiometer R2.
 Input Characteristics
 The curve plotted between emitter current
IE and the emitter-base voltage VEB at
constant collector base voltage VCB is called
input characteristic curve.
 For a given value of VCB, the curve is just like a
diode characteristic in the forward-bias region.
The emitter-base junction is pn junction diode
which is forward biased.
 The junction behaves like a better diode as VCB
increases. There will be greater IE for a given
VEB as VCB increase, although the effect is very
small.
 The emitter current IE increases with the small
increase in emitter-base voltage VEB. It shows
that input resistance is small. The dynamic input
resistance, ri, is very low (20 to 100 Ω)
∆𝑉𝐸𝐵
𝑟𝑖 =
∆𝐼𝐸 𝑉 =𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
𝐶𝐵
 Output Characteristics
 In common base configuration, the curve
plotted between the collector current and
collector base voltage VCB at constant emitter
current IE is called output characteristic.
 The collector current IC is approximately equal
to the emitter current IE. This is true only in the
active region, where collector-base junction is
reverse-biased.
 In the active region, the curves are almost flat.
The large changes in VCB produce only slight
change in IC. The circuit has very high output
resistance ro.
 As VCB becomes positive (the collector-base
junction is forward biased), the collector current
decrease suddenly. This is the saturation state in
which the collector current does not depend on
the emitter current.
 The collector current is not zero when emitter
current is zero. The current which flows through 𝑰𝑪 = 𝜶𝒅𝒄 𝑰𝑬 + 𝑰𝑪𝑩𝑶
the circuit is the reverse leakage current, i.e., ICBO.
Output Resistance
 The ratio of change in collector-base voltage to the
change in collector current at constant emitter current
IE is known as output resistance.
∆𝑉𝐶𝐵
𝑟𝑜 =
∆𝐼𝐶 𝐼𝐸 =𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
Since the output curves are almost flat, the change in collector
current is very small with the change in VCB. It means the output
resistance is very high of the order of 1 MΩ.
Common Emitter (CE) Configuration
 The configuration in which
the emitter is connected
between the collector and
base is known as a common
emitter configuration.
 The input is connected
between emitter and base,
and the output is taken from
the collector and emitter.
Current Amplification Factor (𝜷𝒅𝒄 )
 The base current amplification factor is defined as the
ratio of the output and input current in a common
emitter configuration.
 In common emitter amplification, the output current is
the collector current IC, and the input current is the base
current IB.
 It is represented by 𝛽𝑑𝑐
𝐼𝐶
𝛽𝑑𝑐 =
𝐼𝐵
 Relation Between Current Amplification
Factor (α) & Base Amplification Factor (β)

The above equation shows that the when the α reaches to unity, then
the β reaches to infinity. In other words, the current gain in a common
emitter configuration is very high, and because of this reason, the
common emitter arrangement circuit is used in all the transistor
applications.
Reverse Leakage Current and
Collector Current

 If the base is open (i.e., IB = 0). The current to the emitter is

abbreviated as ICEO that means collector-emitter current with
the base open.
1
𝐼𝐶𝐸𝑂 = 𝐼
1 − 𝛼 𝐶𝐵𝑂

𝐼𝐶𝐸𝑂 = (1+ 𝛽)𝐼𝐶𝐵𝑂

Characteristics of Common
emitter (CE) Configuration
 The base to emitter voltage varies by adjusting the
potentiometer R1. And the collector to emitter voltage
varied by adjusting the potentiometer R2.
 Input Characteristic
 The curve plotted between base
current IB and the base-emitter voltage
VBE for different values of VCE is called
Input characteristics curve.
 The curves are similar to common base
configuration just like a forward diode
characteristic. The base current
IB increases with the increases in the
emitter-base voltage VBE. The ratio of
change in base-emitter voltage VBE to the
change in base current ∆IB at
constant collector-emitter voltage VCE is
known as input resistance, i.e.,
∆𝑉𝐵𝐸
𝑟𝑖 =
∆𝐼𝐵 𝑉 =𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
𝐶𝐸
 The value of ri is typically 1 KΩ. Thus the
input resistance of the CE configuration
is comparatively higher that of CB
configuration.
Output Characteristic

 In CE configuration the curve draws between collector current IC and

collector-emitter voltage VCE at a constant base current IB is called output
characteristic.
Output Characteristic
 In the active region, the collector current increases slowly as
VCE increases. The slope of the curve is quite more than the output
characteristic of CB configuration. The output resistance of the common
base connection is more than that of CE connection.
 The value of the collector current IC increases with the increase in VCE at
constant voltage IB, the value β of also increases with VCE.
 When the VCE falls below a few tenth of a volt, IC also decreases rapidly
as VCE decreases. The collector-base junction of the transistor becomes
forward bias and work in saturation region. In the saturation region, the
collector current becomes independent and free from the input current
IB
 In the active region IC = βIB, thus small input current, IB, produces a large
output current IC.
 IC is not zero when IB is zero, and it is equal to reverse leakage current
ICEO.
Output Resistance
 The ratio of the variation in collector-emitter voltage to
the collector current is known at collector currents at a
constant base current IB is called output resistance ro.
∆𝑉𝐶𝐸
𝑟𝑜 =
∆𝐼𝐶 𝐼 =𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡
𝐵
 The value of output resistance of CE configuration is
more than that of CB.
Common Collector Connection (CC)
 The configuration in which the
collector is common between
emitter and base is known
as CC configuration.
 In CC configuration, the input
circuit is connected between
emitter and base and the
output is taken from the
collector and emitter.
Current Relations in CC Configuration
 In CC configuration, the base current is the input current,
and the emitter current is the output current. i.e.
𝐼𝐸 = 𝑓 𝐼𝐵
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶
𝐼𝐶 = 𝛼𝑑𝑐 𝐼𝐸 + 𝐼𝐶𝐵𝑂
Substitute collector current into above first eq
𝐼𝐸 = 𝐼𝐵 + 𝛼𝑑𝑐 𝐼𝐸 + 𝐼𝐶𝐵𝑂
1 − 𝛼𝑑𝑐 𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶𝐵𝑂
1 1
𝐼𝐸 = 𝐼𝐵 + 𝐼𝐶𝐵𝑂
1 − 𝛼𝑑𝑐 1 − 𝛼𝑑𝑐

𝐼𝐸 = 1 + 𝛽𝑑𝑐 𝐼𝐵 + 1 + 𝛽𝑑𝑐 𝐼𝐶𝐵𝑂

Comparison Between CB and CE
Configurations

Parameters CB CE Configuration
Configuration
Input Dynamic Very Low (20 Ω) Low (1 KΩ)
Resistance
Output Dynamic Very High (1 MΩ) High (1 KΩ)
Resistance
Current Gain Less than unity High (100)
(0.98)
Leakage Current Very small (1µA) High(20 µA)
• NOTE: As CC configuration is the special case of CE
configuration, so we compare only CB and CE
configurations.
Why CE Configuration is widely used in
Amplifier Circuits ?

 The main utility of a transistor lies in

its ability to amplify weak signals.

1) The whole of the signal voltage vs should reach to the

input of amplifier, this can happen only when the input
resistance of amplifier is high as compared to source
resistance RS.
2) The output stage should deliver more power to load RL
only if its output resistance is low.
NOTE: A good amplifier is one which has high input
resistance an low output resistance.
Basic CE Amplifier Circuit
DC Load Line
 Quiescent Condition: The amplifier circuit when no signal is
applied to its input.
 Applying KVL to the collector circuit, we get
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸

1 𝑉𝐶𝐶
𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐶 𝑅𝐶
i.e. equation of a straight line.
 If Collector current equation is
plotted on the transistor’s output
characteristics, we get a straight
line which is know as dc load line
with slope
1
−
𝑅𝐶
and its intercept on IC axis is
𝑉𝐶𝐶
𝑅𝐶
• The operating point of the transistor must lie on the dc load line.
• The exact position is decided by the values of base current and base-
emitter voltage.
• Applying KVL to the base circuit of the transistor, we get
𝑉𝐵𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐵𝐵 − 𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵
• The exact operating point will lie at the intersection of base current and
the dc load line. This point is called quiescent operating point or Q point.
Q-Point

 The Q point should preferably lie in the middle portion of the

active region of the characteristics. This helps the transistor to
amplify ac signals faithfully i.e. without distorting its waveshape.
What is transistor biasing ?
 The main utility of a transistor lies in its ability to amplify
weak signals.

 Transistor Biasing is the process of setting a transistors

DC operating voltage or current conditions to the
correct level so that any AC input signal can be amplified
correctly by the transistor.
Need for biasing of a transistor
 The purpose of dc biasing of a transistor is to obtain a
certain dc collector current at a certain collector-emitter
voltage i.e. operating point (or Q point).
 If the transistor is not biased properly, it would work
inefficiently and produce distortion in output signal.
 A transistor is biased either with the help of dc battery
or associating a circuit with the transistor. The circuit
used for transistor biasing is called the biasing circuit.
Need for Bias Stabilization
 It is required that the operating point should remain
where it was fixed.
 Unfortunately, the operating point shifts with the use of
the circuit and drive the transistor into an undesirable
region.
 The operating point shifts due to the following reasons:
 The transistor parameters are temperature dependent.
 β changes from one transistor to other.
Requirements of a biasing circuit
 The Q-point must be in the center of the active region of
the characteristics, so that it does not move either close
to the saturation region or to the cut-off region, for any
type of input signals.
 Stabilize the collector current against temperature
variations.
 The operating must be independent of the transistor
parameters (𝛽).
Fixed-Bias Circuit
 The transistors base current, IB
remains constant for given values of
Vcc, and therefore the transistors
operating point must also remain
fixed. Hence, referred as fixed biasing.
 This type of transistor biasing
arrangement is also beta dependent
biasing as the steady-state condition
of operation is a function of the
transistors beta β value.
 Fixed-Bias Circuit
 Input Section:
𝑉𝐶𝐶 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐶𝐶 −𝑉𝐵𝐸 𝑉𝐶𝐶
𝐼𝐵 = ≅
𝑅𝐵 𝑅𝐵
The supply voltage Vcc being of fixed value
and fixed value of RB, the base current IB
is also fixed. Hence the name fixed-bias
circuit.
 Output Section:
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸
and 𝐼𝐶 = 𝛽𝐼𝐵 + 𝐼𝐶𝐸𝑂 ≅ 𝛽𝐼𝐵
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
Thermal Runaway
 The heat is produced at the collector junction due to flow of collector
current and hence temperature increases.
 More minority carriers are generated in base-collector region which
increases the leakage current.
 Since,
𝐼𝐶 = 𝛽𝐼𝐵 + 𝐼𝐶𝐸𝑂
Hence, collector current increases, this further increases the
temperature and the whole cycle repeats again.
Fixed-bias Circuit
 Advantages:
 It’s a simple circuit and use only two resistors and one battery.
 It’s very easy to fix the Q-point anywhere in the active region by
simply changing the value of RB.

 Disadvantages:
 The collector current does not remain constant with variation
in temperature. Therefore the operating point is unstable.
 Since, 𝐼𝐶 = 𝛽𝐼𝐵 , and the base current is already fixed, the current
IC is solely dependent on 𝛽, the Q-point will shift.
 Collector to Base Bias Circuit

 This is modified fixed-bias circuit, here,

the base resistor RB is connected to the
collector instead of connecting it to VCC.

 In this form of biasing, the base resistor

RB is connected to the collector with the
base. It means that a feedback exists in
the circuit. The base current depends on
the collector voltage.

 This configuration employs feedback to

prevent thermal runaway and stabilize
the operating point.
Collector to Base Bias Circuit: Analysis

 Input Section:
𝑉𝐶𝐶 = 𝑅𝐶 𝐼𝐶 + 𝐼𝐵 + 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸

𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑅𝐶 + 𝑉𝐵𝐸

𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 − 𝑉𝐵𝐸 𝑉𝐶𝐸 − 𝑉𝐵𝐸

𝐼𝐵 = ≅
𝑅𝐵 + 𝑅𝐶 𝑅𝐵 + 𝑅𝐶

 Output Section:
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 + 𝐼𝐵 𝑅𝐶

𝑉𝐶𝐸 ≅ 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶 since, 𝐼𝐶 ≫ 𝐼𝐵

𝐼𝐶 = 𝛽𝐼𝐵 + 𝐼𝐶𝐸𝑂 ≅ 𝛽𝐼𝐵

 𝐼𝐶 = 𝛽𝐼𝐵 + 𝐼𝐶𝐸𝑂
𝑉𝐶𝐸 ≅ 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
𝑉𝐶𝐸 − 𝑉𝐵𝐸
𝐼𝐵 ≅
𝑅𝐵 + 𝑅𝐶

 There will not be much shifting in operating point due to temperature changes and replacement of
transistor with other.
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑅𝐶 + 𝑉𝐵𝐸
𝑉𝐶𝐶 = 𝛽𝐼𝐵 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑅𝐶 + 𝑉𝐵𝐸
𝑉𝐶𝐶 = (𝛽 + 1)𝐼𝐵 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵 + (𝛽 + 1)𝑅𝐶
𝑉𝐶𝐶 − 𝑉𝐵𝐸 𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝐼𝐶 = 𝛽𝐼𝐵 = 𝛽 =
𝑅𝐵 + (𝛽 + 1)𝑅𝐶 𝑹𝑩
𝜷 + 𝑅𝐶
𝑉𝐶𝐸 ≅ 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
Why collector to base bias is not
used?
 Advantage:
 Circuit stabilizes the operating point almost against variations
in temperature and β.

 Disadvantage:
 As β is fixed for a given transistor, this relation can be satisfied
either by keeping RC fairly large or making RB very low.
 If RC is large, a high VCC is necessary, which increases cost as well as
precautions necessary while handling.
 If RB is low, the reverse bias of the collector–base region is small,
which reduces collector voltage.
Fixed bias with emitter resistor

 The fixed bias circuit is modified by

attaching an external resistor to
the emitter. This resistor stabilizes
the Q-point.
Fixed bias with emitter resistor:
Analysis
 Input Section:
𝑉𝐶𝐶 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸 + 𝐼𝐸 𝑅𝐸
𝑉𝐶𝐶 − 𝐼𝐸 𝑅𝐸 − 𝑉𝐵𝐸 𝑉𝐶𝐶 − 𝐼𝐸 𝑅𝐸
𝐼𝐵 = ≅
𝑅𝐵 𝑅𝐵
 Output Section:
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝑉𝐶𝐸 + 𝐼𝐸 𝑅𝐸
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝑅𝐶 + 𝑅𝐸 𝐼𝐶 since, 𝐼𝐶 ≅ 𝐼𝐸
 The operating point:
𝑉𝐶𝐶 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸 + 𝛽 + 1 𝐼𝐵 𝑅𝐸
𝐼𝐸 = 𝛽 + 1 𝐼𝐵
𝑉 −𝑉 𝑉𝐶𝐶
𝐼𝐵 = 𝐶𝐶 𝐵𝐸 ≅
𝑅𝐵 + 𝛽+1 𝑅𝐸 𝑅𝐵 +𝛽𝑅𝐸
The collector current,
𝛽𝑉𝐶𝐶 𝑉𝐶𝐶
𝐼𝐶 = 𝛽𝐼𝐵 = =
𝑅𝐵 + 𝛽𝑅𝐸 𝑅𝐸 + 𝑅𝐵 𝛽
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝑅𝐶 + 𝑅𝐸 𝐼𝐶
Improved Bias Stability

 The addition of the emitter resistor to the dc bias of the BJT

provides improved stability, that is, the dc bias currents and
voltages remain closer to where they were set by the circuit
when outside conditions, such as temperature, and transistor
beta, change.
 Note: It seems that beta in numerator canceled with beta in
denominator
Stabilization of Operating Point
Fixed bias with emitter resistor
 Advantage:
 Circuit stabilizes the operating point against variations in
temperature and β (i.e. replacement of transistor)

 Disadvantages:
 The collector current is independent of β only if RE very large,
or RB very low.
 If RE is of large value then large dc drop across RE. To obtain a
particular operating point under this condition, high VCC is necessary.
This increases cost as well as precautions necessary while handling.
 If RB is low, a separate low voltage supply should be used in the base
circuit. Using two supplies of different voltages is impractical.
Voltage Divider Bias Circuit

 This is the most widely used method to

provide biasing and stabilization to a
transistor.
 In this form of biasing, R1 and R2 divide
the supply voltage VCC and voltage across
R2 provide fixed bias voltage VB at the
transistor base.
 Also a resistance RE is included in series
with the emitter that provides the
stabilization.
Analysis of VDB Circuit
Input Section
Output Section
VDB Analysis
 As β-value is fixed for a given transistor, this relation can
be satisfied either by keeping RE fairly large, or making
R1||R2 very low.

 In case of amplifier, to avoid the loss of ac signal, a

capacitor of large capacitance is connected across RE. The
capacitor offers a very small reactance to ac signal and so
it passes through the capacitor.
Voltage Divider Bias