R3060G2 ®

R3060G2 Pb
Pb Free Plating Product
30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode
TO-247-2L
APPLICATION Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS

Anode
PRODUCT FEATURE
· Ultrafast Recovery Time
Internal Configuration Cathode
· Soft Recovery Characteristics
Base Backside
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current

GENERAL DESCRIPTION
SF30A60E using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified
Symbol Parameter Test Conditions Values Unit
VR Maximum D.C. Reverse Voltage 600 V
V RRM Maximum Repetitive Reverse Voltage 600 V
I F(AV) Average Forward Current T C =110°C, Per Diode 30 A
I F(RMS) RMS Forward Current T C =110°C, Per Diode 42 A
I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 300 A

PD Power Dissipation 156 W

TJ Junction Temperature -40 to +150 °C
T STG Storage Temperature Range -40 to +150 °C
Torque Module-to-Sink Recommended（M3） 1.1 N·m
R θJC Thermal Resistance Junction-to-Case 0.8 °C /W
Weight 6.0 g
ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V R =600V -- -- 15 µA
I RM Reverse Leakage Current
V R =600V, T J =125°C -- -- 250 µA

I F =30A -- 1.5 1.8 V

VF Forward Voltage
I F =30A, T J =125°C -- 1.3 V
t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 30 -- ns
t rr Reverse Recovery Time V R =300V, I F =30A -- 51 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 4.2 -- A
t rr Reverse Recovery Time V R =300V, I F =30A -- 130 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 9 -- A

Rev.05 Page 1/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 R3060G2 ®

100 250
VR=300V
TJ =125°C
80 200
IF=60A
TJ =125°C

60 150

trr (ns)
IF (A)

40 100 IF=30A
TJ =25°C IF=15A

20 50

0 0
0 0.5 1.5 1.0
2.0 2.5 3.0 0 200 400 600 800 1000
VF（V） diF/dt（A/μs）
Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt

50 2500
VR=300V VR=300V
TJ =125°C TJ =125°C
40 2000
IF=60A IF=60A
IRRM (A)

30 1500
Qrr (nc)

IF=30A

IF=15A
20 1000 IF=30A
IF=15A

10 500

0 0
0 200400 600 800 1000 0 200
400 600 800 1000
diF/dt（A/μs） diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt

1.2 10

1
1
0.8
ZthJC (K/W)

Duty
-1 0.5
0.6 10
Kf

0.2
IRRM 0.1
0.05
0.4 trr Single Pulse
-2
10
0.2 Qrr

-3
0 10 -4 -3 -2 -1
0 75 25 50
100 125 150 10 10 10 10 1
TJ (°C) Rectangular Pulse Duration (seconds)
Fig5. Dynamic Parameters vs Junction Temperature Fig6. Transient Thermal Impedance

. . .

Rev.05 Page 2/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 R3060G2 ®

IF trr

0.25 IRRM
Qrr
IRRM

dIF/dt 0.9 IRRM

Fig7. Diode Reverse Recovery Test Circuit and Waveform

A
Ejector pin hole thickness (h) c1
H

E1

E2
L2

Ø
L1
L

A1

b1

b c
e

TO-247-2L DIMENSIONS
DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES
SYMBOL
MIN. MAX. MIN. MAX.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b 1.000 1.400 0.039 0.055
b1 1.800 2.200 0.071 0.087
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 Ref. 0.138 Ref.
E2 3.600 Ref. 0.142 Ref.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
Ø 7.100 7.300 0.280 0.287
e 10.900 Typ. 0.429 Typ.
H 5.980 Typ. 0.235 Typ.
h 0.000 0.300 0.000 0.012

Rev.05 Page 3/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/