ELEX

BJT
Bipolar Junction Transistor

TRANSISTORS
THE BRAINS
OF ELECTRONICS
Electronic Devices and Circuits - ENGR.MGV Electronic Devices and Circuits - ENGR.MGV
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HISTORY OF TRANSISTORS HISTORY OF TRANSISTORS

During the period 1904 to Shortly thereafter, in 1906,
1947, the vacuum tube Lee De Forest added a
was undoubtedly the third element, called the
electronic device of control grid, to the
interest and development. vacuum diode, resulting in
the first amplifier, the
In 1904, the vacuum tube TRIODE.
diode was introduced by
J. A. Fleming.
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> Before, all equipment was using
valves, diodes and triodes, which
were all vacuum tubes. They were
indispensable but they were large,
short lived and consumed a lot of
power.
> The first computer, ENIAC, used

18000 vacuum tubes: the machine
could not run for more than a few
minutes as at least 1 tube would
burn and had to be replaced.
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Constant overheating and
burnout in the vacuum tubes of
This is a small vacuum tube
ENIAC (Electronic Numerical
used in first generation
Integrator and Computer), the
computers.
first electronic computing
device, led AT&T Bell
Here you can clearly see the
Telephone Laboratory
effect of overheating, leaving
Engineers, John Bardeen,
a black stain on the inside of
William Shockley, and Walter
the glass tube.
Brattain to seek out a suitable
alternative for the commercially
unreliable vacuum tube.
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On December 23, 1947, Walter H.
The three engineers successfully Brattain, John Bardeen, and
William Shockley demonstrated
demonstrated the principle of the amplifying action of the first
amplifying an electrical current transistor at the Bell Telephone
using a solid semiconducting Laboratories.
material, silicon, forming the basic
concept behind the transistor.
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Electronic Devices and Circuits - ENGR.MGV
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Brattain
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Bardeen Shockley
10
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HISTORY OF TRANSISTORS ADVANTAGES OF TRANSISTORS

The advantages of transistor over the tube
where immediately obvious:
✔ It was smaller and light weight.

✔ No heater requirement or heater loss.
✔ Had rugged construction.
✔ More efficient since less power was absorbed
by the device itself
✔ It was instantly available for use, requiring no
warm up period.
Bell Laboratories, Murray Hill, New
Jersey (1947)
✔ Low operating voltages were possible.
The First Point Contact
Transistor
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TRANSISTOR CONSTRUCTION
A Bipolar Junction
Transistor (BJT) has three
terminals connected to
three doped semiconductor
regions.
TRANSISTOR CONSTRUCTION
In an NPN transistor, a
thin and lightly doped
P-type material is
sandwiched between two
thicker N-type materials.
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TRANSISTOR CONSTRUCTION TRANSISTOR CONSTRUCTION

While a PNP transistor,
a thin and lightly doped
N-type material is
sandwiched between two
thicker P-type materials.
The term bipolar reflects

the fact that holes and
electrons participate in the
injection process into the
oppositely polarized Standard BJT symbols.
material.
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TRANSISTOR OPERATION
> The basic operation of transistor will now be

described using the NPN transistor.
TRANSISTOR OPERATION > The operation of the PNP transistor is exactly
the same as if the roles played by the electron
and hole are interchanged.
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TRANSISTOR OPERATION TRANSISTOR OPERATION

The figure shows the
proper bias arrangement
for NPN.
Notice that the

base-emitter junction is
forward-biased and the
base-collector junction
is reverse-biased.
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The figure shows the

proper bias arrangement
for PNP.
Notice that the

base-emitter junction is
forward-biased and the
base-collector junction
is reverse-biased. Notice that in both cases, the BE
junction is forward-biased and the
BC junction is reverse-biased.
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TRANSISTOR OPERATION
What happens inside the NPN transistor?
The forward bias from base to emitter
narrows the BE depletion region, and the
reverse bias from base to collector widens What
the BC depletion region. happens
inside
the
The heavily doped n-type emitter region is NPN
teeming with conduction band (free) transistor?
electrons that easily diffuse through the
forward-biased BE junction into the p-type
base region where they become minority
carriers, just as in a forward-biased diode.
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These relatively few
The base region is lightly recombined electrons flow
doped and very thin so out of the base lead as
that it has a limited valence electrons, forming
number of holes. the small base electron
current.
Thus, only a small
percentage of all the Most of the electrons
electrons flowing through flowing from the emitter
the BE junction can into the thin, lightly doped
combine with all the base region do not
available holes in the base. recombine but diffuse into
the BC depletion region.
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TRANSISTOR OPERATION TRANSISTOR CURRENTS

Once in this region they
are pulled through the
reverse-biased BC
junction by the electric
field set up by the force of
attraction between the
positive and negative ions.
The electrons now move The directions of the currents in an NPN and PNP
through the collector transistor and its schematic symbol.
region, out through the
collector lead, and into the Notice that the arrow on the emitter of the transistor
positive terminal of the symbols points in the direction of the conventional
collector voltageElectronic
source. Devices and Circuits - ENGR.MGV
current. Electronic Devices and Circuits - ENGR.MGV
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TRANSISTOR CURRENTS TRANSISTOR CURRENTS
These diagrams show that The ratio of the DC
the emitter current (IE) is collector current IC to the
the sum of the collector DC base current IB is the
current (IC) and the base DC Beta, which is the
current (IB), expressed as current gain of a
follows: transistor.
THUS,
IB is small compared to Ic
and IE.
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TRANSISTOR PARAMETERS TRANSISTOR PARAMETERS

Shown in the figure is the DC biasing of an NPN For the current and voltage analysis, consider the
and PNP transistors. VBB forward-biases the basic transistor bias circuit configuration given.
emitter junction, and VCC reverse-biases the
base-collector junction.
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TRANSISTOR PARAMETERS
Sample Problem
Determine Beta DC and IE for a

transistor where IB=50 micro A
and IC = 3.65 mA.
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Sample Problem Transistor Characteristics
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Transistor Characteristics Transistor Characteristics
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Transistor Characteristics
Transistor
Regions of Operation
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Transistor Characteristics
Transistor Regions of Operation
• The transistor can be operated in three
modes:
– CUT-OFF REGION
– ACTIVE/LINEAR REGION
– SATURATION REGION
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Transistor Characteristics TRANSISTOR CATEGORIES
•Limits of operation
–Normally specified on the
manufacturer’s data sheet.
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TRANSISTOR CATEGORIES TRANSISTOR CATEGORIES
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TRANSISTOR CATEGORIES TRANSISTOR CATEGORIES
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TRANSISTOR TESTING TRANSISTOR TESTING
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TRANSISTOR TESTING
TRANSISTOR CONFIGURATIONS
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TRANSISTOR CONFIGURATIONS COMMON-BASE (CB) CONFIGURATION
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COMMON-BASE (CB) CONFIGURATION COMMON-BASE (CB) CONFIGURATION
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COMMON-EMITTER (CE)
COMMON-BASE (CB) CONFIGURATION
CONFIGURATION
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COMMON-EMITTER (CE) COMMON-EMITTER (CE)

CONFIGURATION CONFIGURATION
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COMMON-EMITTER (CE) COMMON-COLLECTOR (CC)
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COMMON-COLLECTOR (CC) COMMON-COLLECTOR (CC)

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COMMON-COLLECTOR (CC)
CONFIGURATION
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Ch.2 Summary
Electronic Devices and Circuit Theory Load-Line Analysis

Boylestad
The load line plots all
possible combinations of
diode current (ID) and
Diode Applications voltage (VD) for a given
circuit. The maximum ID
Chapter 2
equals E/R, and the
maximum VD equals E.
The point where the load line and the characteristic curve intersect is the
Q-point, which identifies ID and VD for a particular diode in a given circuit.
Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.2 Summary Ch.2 Summary
Series Diode Configurations Series Diode Configurations

Forward Bias Reverse Bias
Constants Diodes ideally behave as
open circuits
Silicon Diode: VD = 0.7 V
Germanium Diode: VD = 0.3 V
Analysis
Analysis (for silicon) VD = E
VD = 0.7 V (or VD = E if E < 0.7 V) VR = 0 V
VR = E – V D ID = 0 A
ID = IR = I T = VR / R
Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
Ch.2 Summary
Parallel Diode Configurations
Half-Wave Rectification PIV (PRV)

The diode Because the diode is only forward biased for one-half of
conducts only the AC cycle, it is also reverse biased for one-half cycle.
when it is
forward It is important that the reverse breakdown voltage rating of the
biased, diode be high enough to withstand the peak, reverse-biasing AC
therefore only voltage.
half of the AC PIV (or PRV) > Vm
cycle passes
through the Where PIV = Peak inverse voltage
diode to the PRV = Peak reverse voltage
output.
The DC output voltage is 0.318Vm, where Vm = the peak AC voltage. Vm = Peak AC voltage
Full-Wave Rectification Full-Wave Rectification
The rectification process can be

improved by using a full-wave
rectifier circuit.
Full-wave rectification produces a

greater DC output: Bridge Rectifier
A full-wave rectifier with four
Half-wave: Vdc = 0.318Vm diodes that are connected in a
bridge configuration
Full-wave: Vdc = 0.636Vm
VDC = 0.636Vm
Full-Wave Rectification Summary of Rectifier Circuits

In the center tapped transformer rectifier circuit, the peak AC
voltage is the transformer secondary voltage to the tap.
Rectifier Ideal VDC Realistic VDC
Half Wave Rectifier VDC= 0.318Vm VDC = 0.318Vm – 0.7

Center-Tapped
Transformer Rectifier Bridge Rectifier VDC = 0.636Vm VDC = 0.636Vm – 2(0.7 V)
Requires two diodes and a Center-Tapped Transformer

VDC = 0.636Vm VDC = 0.636Vm – 0.7 V
center-tapped transformer Rectifier
Vm = the peak AC voltage

VDC = 0.636Vm
Diode Clippers Biased Clippers

Adding a DC source
The diode in a series clipper in series with the
clipping diode
“clips” any voltage that does
changes the effective
not forward bias it: forward bias of the
diode.
• A reverse-biasing polarity
• A forward-biasing polarity less
than 0.7 V (for a silicon diode)
Parallel Clippers Summary of Clipper Circuits
The diode in a parallel

clipper circuit “clips”
any voltage that forward
biases it.
DC biasing can be added in

series with the diode to
change the clipping level.
Summary of Clipper Circuits Summary of Clipper Circuits
Ch.2 Summary
Clampers
A diode and capacitor

can be combined to
“clamp” an AC signal to
a specific DC level.
Biased Clamper Circuits Summary of Clamper Circuits
The input signal can be any type

of waveform such as a sine,
square, or triangle wave.
The DC source lets you

adjust the DC clamping
level.
Ch.2 Summary
Zener Diodes
The Zener is a diode that is
operated in reverse bias at
the Zener Voltage (Vz).
When Vi ≥ VZ
• The Zener is on
• Voltage across the Zener is VZ
• Zener current: IZ = IR – IRL
• The Zener Power: PZ = VZIZ
When Vi < VZ
• The Zener is off
• The Zener acts as an open circuit
Ch.2 Summary
Zener Resistor Values

If R is too large, the Zener diode cannot conduct
because IZ < IZK. The minimum current is given
by:
The maximum value of

resistance is:
If R is too small, IZ > IZM . The maximum

allowable current for the circuit is given by:
The minimum value of resistance is:
Ch.2 Summary
Voltage-Multiplier Circuits
Voltage multiplier circuits use a combination of diodes

and capacitors to step up the output voltage of rectifier
circuits. Three common voltage multipliers are the:
Voltage Doubler
Voltage Tripler
Voltage Quadrupler
Voltage Doubler Voltage Doubler

Positive Half-Cycle D1 conducts
D2 is switched off
Capacitor C1 charges to Vm
Negative Half-Cycle D1 is switched off

D2 conducts
Capacitor C2 charges to Vm
This half-wave voltage doubler’s output can be calculated
using:
Vout = VC2 = 2Vm Vout = VC2 = 2Vm
where Vm = peak secondary voltage of the transformer

Voltage Tripler and Quadrupler Practical Applications

Rectifier Circuits
Conversions of AC to DC for DC operated circuits
Battery Charging Circuits
Simple Diode Circuits

Protective Circuits against
Overcurrent
Polarity Reversal
Currents caused by an inductive kick in a relay circuit
Zener Circuits
Overvoltage Protection
Setting Reference Voltages

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BJT

Bipolar Junction Transistor

HISTORY OF TRANSISTORS HISTORY OF TRANSISTORS

> The first computer, ENIAC, used

HISTORY OF TRANSISTORS HISTORY OF TRANSISTORS

HISTORY OF TRANSISTORS ADVANTAGES OF TRANSISTORS

✔ It was smaller and light weight.

TRANSISTOR CONSTRUCTION TRANSISTOR CONSTRUCTION

The term bipolar reflects

> The basic operation of transistor will now be

TRANSISTOR OPERATION TRANSISTOR OPERATION

Notice that the

The figure shows the

Notice that the

TRANSISTOR OPERATION TRANSISTOR CURRENTS

TRANSISTOR PARAMETERS TRANSISTOR PARAMETERS

TRANSISTOR PARAMETERS TRANSISTOR PARAMETERS

Determine Beta DC and IE for a

Sample Problem Transistor Characteristics

Transistor Characteristics Transistor Characteristics

Transistor Characteristics TRANSISTOR CATEGORIES

TRANSISTOR CATEGORIES TRANSISTOR CATEGORIES

COMMON-BASE (CB) CONFIGURATION COMMON-BASE (CB) CONFIGURATION

COMMON-EMITTER (CE) COMMON-EMITTER (CE)

COMMON-COLLECTOR (CC) COMMON-COLLECTOR (CC)

Electronic Devices and Circuits - ENGR.MGV

Electronic Devices and Circuit Theory Load-Line Analysis

Ch.2 Summary Ch.2 Summary

Series Diode Configurations Series Diode Configurations

Parallel Diode Configurations

Half-Wave Rectification PIV (PRV)

Ch.2 Summary Ch.2 Summary

Full-Wave Rectification Full-Wave Rectification

The rectification process can be

Full-wave rectification produces a

Full-Wave Rectification Summary of Rectifier Circuits

Half Wave Rectifier VDC= 0.318Vm VDC = 0.318Vm – 0.7

Requires two diodes and a Center-Tapped Transformer

Vm = the peak AC voltage

Ch.2 Summary Ch.2 Summary

Diode Clippers Biased Clippers

Parallel Clippers Summary of Clipper Circuits

The diode in a parallel

DC biasing can be added in

Ch.2 Summary Ch.2 Summary

Summary of Clipper Circuits Summary of Clipper Circuits

A diode and capacitor

Ch.2 Summary Ch.2 Summary

Biased Clamper Circuits Summary of Clamper Circuits

The input signal can be any type

The DC source lets you

Zener Resistor Values

The maximum value of

If R is too small, IZ > IZM . The maximum

The minimum value of resistance is:

Voltage multiplier circuits use a combination of diodes

Ch.2 Summary Ch.2 Summary

Voltage Doubler Voltage Doubler

Negative Half-Cycle D1 is switched off

where Vm = peak secondary voltage of the transformer

Voltage Tripler and Quadrupler Practical Applications

Simple Diode Circuits

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