PDF 4

Inverter
Robot and Servo Drive Lab. Drive + Motor
T1 T3 T5
W
Vdc U V
T4 T6 T2
南臺科技大學電機工程系
王明賢
1
Te 
r
e i
x u ,v , w
x x
Department
p of Electrical Engineering
g g
Southern Taiwan University of Science and technology 2017/10/2
2017/10/2 3
Department of Electrical Engineering Robot Robot and Servo
and Servo Drive Drive
Lab. Lab.
Southern Taiwan University of Science and technology
30 o 60 o 90 o 120 o 150 o 180 o 210 o 240 o 270 o 300 o 330 o 360 o
Outline 6-step driving Phase-U

terminal
voltage
e
U-Hall
Using Hall-effect sensors sensor

U-BEMF
U-BEMF
 Sensorless speed control Phase-V

Inverter terminal
e
Sensorless initial rotor position detection
voltage
 + Motor
V Hall
V-Hall
sensor
V-BEMF
 Hardware T1 T3 T5 V-BEMF
W Phase-W
Phase W
 References Vdc U V terminal

voltage
W-Hall
e
sensor
T4 T6 T2 W-BEMF
W-BEMF
_
T1 ON OFF
T2 ON OFF
T3 ON OFF
T4 OFF ON
T5 OFF ON
2017/10/2 2017/10/2 T6 ON OFF ON

2 4
Department of Electrical Engineering Robot and Servo Drive Lab. Department of Electrical Engineering Step1 Drive
Robot and Servo Step2
Lab. Step3 Step4 Step5 Step6
Southern Taiwan University of Science and technology Southern Taiwan University of Science and technology
Sensorless speed control [1, 2]
Thee research
esea c ono sensorless
se so ess control
co t o techniques
tec ques for
o BLDCMsC s ca
can be
divided into four categories:
1. Back-EMF based methods
1) Detecting zero crossing points (ZCPs) of the terminal voltages,
2) Back electromagnetic force (EMF) integration method,
3) Sensing of the third harmonic of the back EMF,
EMF
4) Detecting freewheeling diode conduction and related extended
g
strategies.
2. Flux calculation based methods
3. Observer based methods
4. Others Phase terminal voltage and the back-EMF waveform.
2017/10/2 2017/10/2
5 7
Department of Electrical Engineering Robot and Servo Drive Lab. Department of Electrical Engineering Robot and Servo Drive Lab.
Conventional sensorless commutation
Three-phase back EMFs and the zero crossings of back EMFs.

2017/10/2 2017/10/2
6 8
1.1 Based on the terminal voltage sensing
1.4 Based on the freewheeling diode conduction
Adv: The terminal voltage sensing method is widely used for low cost
Disadv: This method also has a position error of commutation points in
industrial applications such as fans, pumps and compressor drives
the transient state as other back-EMF based methods. The most
where frequent speed variation is not required.
serious drawback of this method is the use of six isolated power
Disadv: The drawback of the above methods is that it is not possible to
supplies for the comparator circuitry to detect current flowing in
use the noisy terminal voltage to obtain a switching pattern at low
each freewheelingg diode. The drawback pprohibits this method
speeds
d since
i back-EMF
b k EMF iis zero att standstill
t d till andd proportional
ti l tot
from practical applications.
rotor speed.
2. Flux calculation based methods
Also the estimated commutation points have position error during
Also,
Disadv: This method also has an error accumulation problem for
the transient period when the speed is accelerated or decelerated
integration at low speeds. The method involves lots of
rapidly, especially for a system that has low inertia.
computation and is sensitive to the parameter variation.
variation
With these methods, rotor position can be detected typically from 20%
off th
the rated
2017/10/2
t d speed.
d 2017/10/2
9 11
Department of Electrical Engineering Robot and Servo Drive Lab. Department of Electrical Engineering Robot Robot and Servo
and Servo Drive Drive
Lab. Lab.
Inverter topology [3]

1.2 Based on the back-EMF integration
Adv: If flux weakening operation is required, current advance can be
achieved by changing the threshold voltage. The integration
approach is less sensitive to switching noise and automatically
adjusts for speed changes.
Disadv: The effect at low speed operation is poor due to the error
acc m lation and offset voltage
accumulation oltage problems from the integration.
integration
1.3 Based on the third harmonic of the back-EMF sensing
Adv: The third harmonic based method has a wider speed range and
smaller phase delay than the terminal voltage sensing method.
Disadv: To sense the third harmonic of the back-EMF, an external
hardware circuit is required. At low speed, the integration
v xn  Rs ix  ( Ls  LM )
dix
 ex e i x x
dt Te  x u ,v , w
process can cause a serious position error, as noise and offset
L  Ls  LM r
2017/10/2
error from
f sensing i can be b accumulated l t d forf a relatively
l ti l long
l 2017/10/2
10 12
period ofoftime.
Department Electrical Engineering Robot and Servo Drive Lab. Department of Electrical Engineering Robot and Servo Drive Lab.
States IV and V
Ideal back EMF,

conduction current,
commutation signals,
and switching signals of a
freewheeling chopping
mode.
Equivalent
E i l t circuits
i it off eachh commutation
t ti state
t t for
f phase
h “u”
“ ”
(c) Armature current is “-,” conducted, state IV and V.
(d) Armature current is “-,” freewheeling,
freewheeling state IV and VV.
Vu  0,  e  210 o ~ 330 o (conducted and freewheeling states)

2017/10/2 2017/10/2
13 15
States I and II States III and VI
Equivalent circuits of each commutation state for phase “u”

u
Equivalent circuits of each commutation state for phase “u” (e) Armature current is open, conducted, state III and VI.
(a) Armature current is “+,” conducted, state I and II. (f) Armature current is open, freewheeling, state III and VI.
(b) Armature current is “++,” freewheeling,
freewheeling state I and II.
II
 V
Vu  Vdc ,  e  30 ~ 150
o o
(conducted states) eu  dc , conducted  e  150o ~ 210o ;
Vu  eu  Vn   2
V  0,  e  30 o ~ 150
2017/10/2u 1 0o (f
(freewheeling
h li states)) 2017/10/2 eu , freewheeling 330 o ~ 30 o 16
14
States III and VI
If the terminal voltages are expressed in the average form
(i.e., duty ratio), the switching states can be eliminated. The
terminal voltages are rewritten as follows.
States I and II: Armature current is positive:
Vu  D  Vdc ,  e  30 o ~ 150 o
di States III and VI: Armature is open (non-conducted):
Vn  Vdc  iRs  L  ev di
dt Vn  iRs  L  ev ( e  30 o )
di dt Vu   ( D  Vdc )  e  30 o ~ 30 o
d ),
Vn  ew  iRs  L di 60 o
dt Vn  ew  iRs  L
1 dt ( e  150 o )
Vn  Vdc 1
d  (ev  ew ) 
Vu  ( D  Vdc )   ( D  Vdc ),  e  150 o ~ 210 o
 Vn  (ev  ew )  0 60 o
2 2
 Vdc / 2 ( ev  ew  0) States IV and V: Armature current is negative:
Vu  eu
1 Vu  0,  e  210 o ~ 330 o
Vu 
2017/10/2 Vdc  eu 2017/10/2
2 17 19
Measured instantaneous
terminal voltageVu
switching signal for S1
switching signal for S4
The back emf signal

g can be obtained from the floating g phase,
p , and the Ideal average terminal voltages under different duty ratios.
ratios
zero crossing points lead 30 degrees of the commutation points.
2017/10/2
18
2017/10/2
20
Measured instantaneous Measured
M d iinstantaneous
t t
terminal voltage terminal voltage
Measured average Measured average

terminal voltages terminal voltages
(a) Duty ratio = 10%. (c) Duty ratio = 100%.
2017/10/2 2017/10/2
21 23
Vuw  D  Vdc ,  e  90 o ~ 150 o

Vuw   D  Vdc ,  e  270 o ~ 330 o
Measured instantaneous  e  30 o ~ 90 o

terminal voltage ( e  30 o )
Vuw  (  D  Vdc )   ( 2  D  Vdc )
120 o
 e  150 o ~ 270 o
Measured average ( e  150 o )
Vuw  ( D  Vdc )   ( 2  D  Vdc )
terminal voltages 120 o
(b) Duty ratio = 50%. The zero crossing points of average

line voltages are in phase with ideal
2017/10/2 2017/10/2
commutation
t ti signals.
i l
22 24
Estimation methods
average
g phase-u
p terminal
voltage
average phase-w terminal

voltage
average uw-line
uw line voltage
estimated commutation
signal
signal
i l from
f Hall
H ll effect
ff
sensor
(a) Excitation signal; (b) method 1; (c) method 2; (d) method 3.
2017/10/2 2017/10/2
25 27
Detection of initial rotor position [4]
180-degree conduction
The excitation configurations for

the initial position detection
of the BLDCM within 60 electric
degrees.
2017/10/2 2017/10/2
26 28
Method 4: discharging Position definition
1 1 1
VWN  VnN  (VVN  VUN )  (Vdc  0.7V  (0.7V ))  Vdc
2 2 2
2017/10/2 2017/10/2
29 31
Simplified excitation configurations Sector determination
2017/10/2 2017/10/2
30 32
Experimental results Experimental results
A 5
A=5 A=6
A 6
The difference of time duration for freewheeling period may be not

long enough. This is the algorithm mainly concerned.
2017/10/2 2017/10/2
33 35
Experimental results MOSFET
• Drain-Source breakdown voltage (min)

• VGS(th) (min)
• RDS(on) (max)
• turn-on delay time (max)
• turn off delay time (max)
turn-off
A 3
A=3 A 4
A=4
Turn-on delay time: 10% of gate voltage to 10% of collector voltage
2017/10/2 T
Turn-off
2017/10/2 ff ddelay
l time:
i 90% off gate voltage
l to 90% off collector
ll voltage
l
34 36
IGBT Photo-couplers
Insulated gate bipolar transistor:
• Collector-Emitter breakdown voltage (min)
• VGE(th) (min)
• turn-on
turn on delay time (max)
• turn-off delay time (max)
Forward current (min)

( )
Current transfer ratio (min)
TLC250
Output voltage
Propagation delay time (tPHL,tPLH)
2017/10/2 [5] 37
2017/10/2
39
Gate driver
[5]
IGBTs are minority carrier devices, and have superior conduction Block Diagram
g
characteristics, while sharing many of the appealing features of power of the IR2110
MOSFETs such as ease of drive, wide SOA, peak current capability gate driver
and ruggedness
ruggedness.
2017/10/2
38
2017/10/2 [5] 40
Gate driver High-voltage IPM
The lower arm switch is directly driven by signal from LO pin. Mitsubishi Intelligent
g Power Modules
During this duration, boot capacitor is charged thru Vcc and diode.
As driving upper arm, the voltage across the capacitor acts as supply PM20CSJ060：
to output signal from pin HO
HO. In the meanwhile
meanwhile, the capacitor will
600V 20A 15KH IGBT type iinverter
600V,20A,15KHz
discharges until upper arm switch off. The undervoltage (UV) detector
shutdowns the ggate driver when it detects the capacitor
p voltage
g lower pprotections for over-current,short-circuit,
, ,
than the predefined value.
over-temperature,under-voltage
delay time (toff-ton) ≦2µs
2017/10/2 2017/10/2
41 43
References
 [1] T. Kim, H-W. Lee and M. Ehsani, “Position sensorless brushless DC
motor/generator drives: review and future trends,”
trends, IET Electr. Power Appl.,
2007, 1, (4), pp. 557–564.
 [2] J. Shao, “An improved microcontroller-based sensorless brushless DC
(BLDC) motor t drive
d i for
f automotive
t ” IEEE T
ti applications,”
li ti Trans. IInd.
d AAppl.,
l
Vol. 42, No. 5, pp. 1216-1231, Sep./Oct. 2006.
 [[3]] Y.-S. Lai, F.-S. Shyu, g “New initial p
y and S.-S. Tseng, position detection
technique for three-phase brushless DC motor without position and current
sensors,” IEEE Trans. Ind. Appl., Vol. 39, No. 2, pp. 485-491, Mar./Apr. 2003.
 [4] CC. H
H. Chen and M M. Y Cheng, “A
Y. Cheng A new cost effective sensorless
commutation method for brushless DC motors without phase shift circuit
and neutral voltage,” IEEE Trans. Power Electronics, Vol. 22, No. 2, pp. 644-
IR2130 gate driver 653 Mar.
653, M 2007.
2007
 [5] International Rectifier, Application Note AN-983: IGBT Characteristics.
2017/10/2 [5] 42
2017/10/2
44

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Inverter

Robot and Servo Drive Lab. Drive + Motor

30 o 60 o 90 o 120 o 150 o 180 o 210 o 240 o 270 o 300 o 330 o 360 o

Outline 6-step driving Phase-U

Using Hall-effect sensors sensor

 Sensorless speed control Phase-V

 References Vdc U V terminal

2017/10/2 2017/10/2 T6 ON OFF ON

Conventional sensorless commutation

Three-phase back EMFs and the zero crossings of back EMFs.

Inverter topology [3]

Ideal back EMF,

Vu  0,  e  210 o ~ 330 o (conducted and freewheeling states)

States I and II States III and VI

Equivalent circuits of each commutation state for phase “u”

switching signal for S1

switching signal for S4

The back emf signal

Measured average Measured average

(a) Duty ratio = 10%. (c) Duty ratio = 100%.

Vuw  D  Vdc ,  e  90 o ~ 150 o

Measured instantaneous  e  30 o ~ 90 o

(b) Duty ratio = 50%. The zero crossing points of average

average phase-w terminal

Detection of initial rotor position [4]

The excitation configurations for

Simplified excitation configurations Sector determination

The difference of time duration for freewheeling period may be not

Experimental results MOSFET

• Drain-Source breakdown voltage (min)

Forward current (min)

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