H27U8G8F2M Datasheet

1
Preliminary
H27U8G8F2M Series
8Gbit (1Gx8bit) NAND Flash
8Gb NAND FLASH

H27U8G8F2M
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.2 / Jul. 2008 1
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Preliminary
H27U8G8F2M Series
Document Title
8Gbit (1Gx8bit) NAND Flash Memory
Revision History
Revision No. History Draft Date Remark
0.0 Initial Draft. Aug. 23. 2007 Preliminary
1) Change Program Characteristics tDBSY
Typ. Max.
Before 0.5 1
0.1 Feb. 18. 2008 Preliminary
After 1 2
2) Change tCBSY to tDBSY

3) Confirm AC Characteristics
- Max. tRST = 20/20/50
1) Correct Table 5. Mode Selection.
CLE ALE CE WE RE WP MODE
0.2 L L L H H X During Read (Busy) Jul. 4. 2008 Preliminary

↓ ↓ ↓
X X X H H X During Read (Busy)
Rev 0.2 / Jul. 2008 2

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Preliminary
H27U8G8F2M Series
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES STATUS REGISTER

- Cost effective solutions for mass storage applications - Normal Status Register (Read/Program/Erase)
MULTIPLANE ARCHITECTURE ELECTRONIC SIGNATURE

- Array is split into two independent planes. Parallel - 1st cycle : Manufacturer Code
Operations on both planes are available, halving - 2nd cycle : Device Code
Program, read and erase time. - 3rd cycle : Internal chip number, Cell Type, Number of
Simultaneously Programmed Pages.
NAND INTERFACE - 4th cycle : Page size, Block size, Organization, Spare
- x8 bus width. size
- Address/ Data Multiplexing - 5th cycle : Multiplane information
- Pinout compatiblity for all densities
CHIP ENABLE DON’T CARE
SUPPLY VOLTAGE - Simple interface with microcontroller
- 3.3V device : Vcc = 2.7 V ~3.6 V
HARDWARE DATA PROTECTION
MEMORY CELL ARRAY - Program/Erase locked during Power transitions.
- (4K + 128) bytes x 64 pages x 4096 blocks
DATA RETENTION
PAGE SIZE - 100,000 Program/Erase cycles (with 1bit/528byte ECC)
- (4K + 128 spare) Bytes - 10 years Data Retention
BLOCK SIZE PACKAGE

- (256K + 8Kspare) Bytes - H27U8G8F2MTR-BC
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
PAGE READ / PROGRAM - H27U8G8F2MTR-BC (Lead & Halogen Free)
- Random access : 25us (max.)
- Sequential access : 25ns (min.)
- Page program time : 200us (typ.)
- Multi-page program time (2 pages) : 200us (Typ)
COPY BACK PROGRAM

- Automatic block download without latency time
FAST BLOCK ERASE

- Block erase time: 1.5ms (Typ)
- Multi-block erase time (2 blocks) : 1.5ms (Typ)
CACHE READ
- Internal buffer to improve the read throughput
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H27U8G8F2M Series
1.SUMMARY DESCRIPTION
Hynix NAND H27U8G8F2M Series have 1024Mx8bit with spare 32Mx8 bit capacity. The device is offered in 3.3 Vcc Power
Supply, and with x8 I/O interface Its NAND cell provides the most cost-effective solution for the solid state mass storage
market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while
old data is erased.
The device contains 4096 blocks, composed by 64 pages. A program operation allows to write the 4224-byte page in typi-
cal 200us and an erase operation can be performed in typical 1.5ms on a 256K-byte block.
In addition to this, thanks to multi-plane architecture, it is possible to program 2 pages a time (one per each plane) or to
read 2 pages a time (one per each plane) to erase 2 blocks a time (again, one per each plane). As a consequence, multi-
plane architecture allows program time reduction and erase time reduction.
Data in the page can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/
output as well as command input.
This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of
footprint. Commands, Data and Addresses are synchronously introduced using CE, WE, RE ALE and CLE input pin. The
on-chip Program/Erase Controller automates all read, program and erase functions including pulse repetition, where
required, and internal verification and margining of data. The modify operations can be locked using the WP input. The
output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multiple mem-
ories the R/B pins can be connected all together to provide a global status signal.
The copy back function allows the optimization of defective blocks management. when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase. Due to this feature, it is no more nor necessary nor recommended to use external 2-bit ECC to detect
copy back operation errors. Data read out after copy back read (both for single and multiplane cases) is allowed.
Even the write-intensive systems can take advantage of the H27U8G8F2M Series extended reliability of 100K program/
erase cycles by supporting ECC (Error Correcting Code) with real time mapping-out algorithm. The chip supports CE don’t
care function. This function allows the direct download of the code from the NAND Flash memory device by a microcontrol-
ler, since the CE transitions do not stop the read operation.
This device includes also extra features like OTP/Unique ID area, Read ID2 extension.
The H27U8G8F2M Series are available in 48-TSOP1 12 x 20 mm.
1.1 Product List
PART NUMBER ORGANIZATION Vcc RANGE PACKAGE

H27U8G8F2M x8 2.7V ~ 3.6V 48-TSOP1
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Preliminary
H27U8G8F2M Series
9&&
IO7 - IO0 Data Input / Outputs

CLE Command latch enable
&( ,2a,2 ALE Address latch enable
:( CE Chip Enable
5( 5% RE Read Enable
$/( WE Write Enable
&/( WP Write Protect
:3
R/B Ready / Busy
Vcc Power Supply
Vss Ground
NC No Connection
966
Figure1: Logic Diagram Table 1: Signal Names
1& 1&
1& 1&
1& 1&
1& 1&
1& ,2
1& ,2
5% ,2
5( ,2
&( 1&
1& 1&
1&
1& 1$1')ODVK 9FF
9FF
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1&
1& [ 1&
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:( ,2
:3 ,2
1& ,2
1& 1&
1& 1&
1& 1&
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Figure 2. 48TSOP1 Contact, x8 Device
Rev 0.2 / Jul. 2008 5

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Preliminary
H27U8G8F2M Series
1.2 PIN DESCRIPTION
Pin Name Description

DATA INPUTS/OUTPUTS
The IO pins allow to input command, address and data and to output data during read / program
IO0-IO7 operations. The inputs are latched on the rising edge of Write Enable (WE). The I/O buffer float to
High-Z when the device is deselected or the outputs are disabled.
COMMAND LATCH ENABLE
CLE This input activates the latching of the IO inputs inside the Command Register on the Rising edge of
Write Enable (WE).
ADDRESS LATCH ENABLE
ALE This input activates the latching of the IO inputs inside the Address Register on the Rising edge of
Write Enable (WE).
CHIP ENABLE
CE
This input controls the selection of the device.
WRITE ENABLE
WE This input acts as clock to latch Command, Address and Data. The IO inputs are latched on the rise
edge of WE.
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is
RE
valid tREA after the falling edge of RE which also increments the internal column address counter by
one.
WRITE PROTECT
WP The WP pin, when Low, provides an Hardware protection against undesired modify (program / erase)
operations.
READY BUSY
R/B
The Ready/Busy output is an Open Drain pin that signals the state of the memory.
SUPPLY VOLTAGE
Vcc
The Vcc supplies the power for all the operations (Read, Write, Erase).
Vss GROUND
NC NO CONNECTION
Table 2: Pin Description

NOTE:
1. A 0.1uF capacitor should be connected between the Vcc Supply Voltage pin and the Vss Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required
during program and erase operations.
Rev 0.2 / Jul. 2008 6

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Preliminary
H27U8G8F2M Series
3DJH . %\WHV

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Figure 3: Array Organization
IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7

1st Cycle A0 A1 A2 A3 A4 A5 A6 A7
2nd Cycle A8 A9 A10 A11 A12 L (1)
L (1)
L(1)
3rd Cycle A13 A14 A15 A16 A17 A18 A19 A20
4th Cycle A21 A22 A23 A24 A25 A26 A27 A28
5th Cycle A29 A30 L(1) L(1) L(1) L(1) L(1) L(1)
Table 3: Address Cycle Map
NOTE:
1. L must be set to Low.
2. 1st & 2nd cycle are Column Address.
3. 3rd to 5th cycle are Row Address.
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Preliminary
H27U8G8F2M Series
Acceptable command
FUNCTION 1st CYCLE 2nd CYCLE 3rd CYCLE 4th CYCLE
during busy
READ1 00h 30h - -
MULTI-PLANE READ 60h 60h 30h -
READ FOR COPY-BACK 00h 35h - -
READ ID 90h - - -
RESET FFh - - - Yes
PAGE PROGRAM 80h 10h - -
COPY BACK PGM 85h 10h - -
MULTI PLANE PROGRAM 80h 11h 81h 10h
MULTI PLANE COPYBACK 85h 11h 81h 10h
PROGRAM
BLOCK ERASE 60h D0h - -
MULTI PLANE 60h 60h D0h -
BLOCK ERASE
READ STATUS REGISTER 70h - - - Yes
RANDOM DATA INPUT 85h - - -
RANDOM DATA OUTPUT 05h E0h - -
MULTI PLANE RANDOM DATA
00h 05h E0h -
OUTPUT
READ CACHE 31h - - -
READ CACHE END 3Fh - - -
PAGE PROGRAM WITH
BACKWARD COMPATIBILITY 80h 11h 80h 10h
(2KB)
COPY BACK PROGRAM WITH
BACKWARD COMPATIBILITY 85h 11h 85h 10h
(2KB)
Table 4: Command Set

Note:
1. The backward compatibility can be supported in multi plane operation.
CLE ALE CE WE RE WP MODE

H L L Rising H X Command Input
Read Mode
L H L Rising H X Address Input(5 cycles)
H L L Rising H H Command Input
Write Mode
L H L Rising H H Address Input(5 cycles)
L L L Rising H H Data Input
L L L H Falling X Data Output
X X X H H X During Read (Busy)
X X X X X H During Program (Busy)
X X X X X H During Erase (Busy)
X X X X X L Write Protect
X X H X X 0V/Vcc Stand By
Table 5: Mode Selection

Rev 0.2 / Jul. 2008 8
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H27U8G8F2M Series
2. BUS OPERATION
There are six standard bus operations that control the device. These are Command Input, Address Input, Data Input,
Data Output, Write Protect, and Standby.
Typically glitches less than 3ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not
affect bus operations.
2.1 Command Input.

Command Input bus operation is used to give a command to the memory device. Command are accepted with Chip
Enable low, Command Latch Enable High, Address Latch Enable low and Read Enable High and latched on the rising
edge of Write Enable. Moreover for commands that starts a modify operation (write/erase) the Write Protect pin must be
high. See Figure 5 and Table 12 for details of the timings requirements.
2.2 Address Input.

Address Input bus operation allows the insertion of the memory address. Five cycles are required to input the addresses
for the 8Gbit devices. Addresses are accepted with Chip Enable low, Address Latch Enable High, Command Latch Enable
low and Read Enable High and latched on the rising edge of Write Enable. Moreover for commands that starts a modify-
ing operation (write/erase) the Write Protect pin must be high. See Figure 6 and Table 12 for details of the timings
requirements. Addresses are always applied on IO(7:0), disregarding the bus configuration.
In addition, addresses over the addressable space are disregarded even if the user sets them during command insertion.
2.3 Data Input.

Data Input bus operation allows to feed to the device the data to be programmed. The data insertion is serial and timed
by the Write Enable cycles. Data are accepted only with Chip Enable low, Address Latch Enable low, Command Latch
Enable low, Read Enable High, and Write Protect High and latched on the rising edge of Write Enable. See Figure 7 and
Table 12 for details of the timings requirements.
2.4 Data Output.

Data Output bus operation allows to read data from the memory array and to check the status register content. Data can
be serially shifted out by toggling the Read Enable pin with Chip Enable low, Write Enable High, Address Latch Enable
low, and Command Latch Enable low. See Figure 8,10,11,12,13 and Table 12 for details of the timings requirements.
2.5 Write Protect.

Hardware Write Protection is activated when the Write Protect pin is low. In this condition modifying operation does not
start and the content of the memory is not altered. Write Protect pin is not latched by Write Enable to ensure the protec-
tion even during the power up.
2.6 Standby
In Standby mode the device is deselected, outputs are disabled and Power Consumption is reduced. Stand-by is obtained
holding high, at least for 10us, CE pin.
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H27U8G8F2M Series
3. DEVICE OPERATION
3.1 Page Read.

This operation is operated by writing 00h and 30h to the command register along with five address cycles.
Two types of operations are available: random read, serial page read. The random read mode is enabled when the page
address is changed. The 4224 bytes of data within the selected page are transferred to the data registers in less than
25us(tR). The system controller may detect the completion of this data transfer (tR) by analyzing the output of R/B pin.
Once the data in a page is loaded into the data registers, they may be read out in 25ns cycle time by sequentially puls-
ing RE. The repetitive high to low transitions of the RE clock make the device output the data starting from the selected
column address up to the last column address.
The device may output random data in a page instead of the sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data
output command. Random data output can be operated multiple times regardless of how many times it is done in a
page.
3.2 Cache Read

Cache read can be used to increase the read operation speed when accessing sequential pages within a block.
First, issue a normal page read (00-30h). See figure 14.
The R/B signal goes low for tR during the time it takes to transfer the first page of data from the memory to the data
register. After R/B returns to high (31h) command is latched into the command register. R/B goes low while data is
being transferred from the data register to the cache register. After the data register contents are transferred to the
cache register, another page read is automatically started as part of the 31h command. Data is transferred from the next
sequential page of the memory array to the data register during the same time data is being read serially from the
cache register. If the total time to output data exceeds tR, then the page read is hidden.
The second and subsequent pages of data are transferred to the cache register by issuing additional 31h commands.
R/B will stay low. This time can vary, depending on whether the previous memory-to-data-register transfer was com-
pleted prior to issuing the next 31h command.
If the data transfer from memory to the data register is not completed before the 31h command is issued, R/B stays low
until the transfer is complete.
It is not necessary to output a whole page of data before issuing another 31h command. R/B will stay low until the pre-
vious page read is complete and the data has been transferred to the cache register.
To read out the last page of data (3Fh) command is issued. This command transfers data from the data register to the
cache register without issuing another page read.
3.3 Multi-Plane Page Read

Multi-Plane Page Read is an extension of Page Read, for a single plane with 4,224 byte page registers. Since the device
is equipped with two memory planes, activating the two sets of 4,224 byte page registers enables a random read of two
pages. Multi-Plane Page Read is initiated by repeating command 60h followed by three address cycles twice. In this case
only same page of same block can be selected from each plane.
After Read Confirm command(30h) the 8,448 bytes of data within the selected two page are transferred to the data reg-
isters in less than 25us(tR). The system controller can detect the completion of data transfer(tR) by monitoring the out-
put of R/B pin.
Once the data is loaded into the data registers, the data output of first plane can be read out by issuing command 00h
with Five Address Cycles, command 05h with two column address and finally E0h. The data output of second plane can
be read out using the identical command sequences. The restrictions for Multi-Plane Page Program are shown in Figure
15. Multi-Plane Read must be used in the block which has been programmed with Multi-Plane Page Program.
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H27U8G8F2M Series
3.4 Multi-Plane Page Read With Cache

The device has a multi-plane page read with cache operation, which enables much higher speed read operation com-
pared to page read operation. The restrictions for this operation are shown in Figure 16.
3.5 Page Program.

The device is programmed by page. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 8 times. The addressing should be done on each pages
in a block. A page program cycle consists of a serial data loading period in which up to 4224bytes of data may be
loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed
into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command (80h), fol-
lowed by the five cycle address inputs and then serial data. The bytes other than those to be programmed do not need
to be loaded. The device supports random data input in a page.
The column address of next data, which will be entered, may be changed to the address which follows random data
input command (85h). Random data input may be operated multiple times regardless of how many times it is done in
a page. The Page Program confirm command (10h) initiates the programming process. Writing 10h alone without pre-
viously entering the serial data will not initiate the programming process. The internal write state controller automati-
cally executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for
other tasks. Once the program process starts, the Read Status Register command may be entered to read the status
register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Sta-
tus bit (I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming
is in progress. When the Page Program is complete, the Write Status Bit (I/O 0) may be checked. The internal write
verify detects only errors for "1"s that are not successfully programmed to "0"s.
The command register remains in Read Status command mode until another valid command is written to the command
register. Figure 17 details the sequence.
3.6 Multi Plane Program.

Device supports multiple plane program: it is possible to program in parallel 2 pages, one per each plane.
A multiple plane program cycle consists of a double serial data loading period in which up to 4224bytes of data may be
loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed
into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command (80h), fol-
lowed by the five cycle address inputs and then serial data for the 1st page. Address for this page must be within 1st
plane (A<19>=0). The data of 1st page other than those to be programmed do not need to be loaded. The device
supports random data input exactly like page program operation. The Dummy Page Program Confirm command (11h)
stops 1st page data input and the device becomes busy for a short time (tDBSY). Once it has become ready again, 81h
command must be issued, followed by 2nd page address (5 cycles) and its serial data input. Address for this page must
be within 2nd plane (A<19>=1). The data of 2nd page other than those to be programmed do not need to be
loaded. Program Confirm command (10h) makes parallel programming of both pages start. User can check operation
status by R/B pin or read status register command, as if it were a normal page program; status register command is
also available during Dummy Busy time (tDBSY). In case of fail in 1st or 2nd page program, fail bit of status register
will be set: Device supports pass/fail status of each plane. Figure 18 details the sequence.
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Preliminary
H27U8G8F2M Series
3.7 Block Erase.

The Erase operation is done on a block basis. Block address loading is accomplished in there cycles initiated by an
Erase Setup command (60h). Only address A19 to A30 is valid while A13 to A18 is ignored. The Erase Confirm com-
mand (D0h) following the block address loading initiates the internal erasing process. This two step sequence of setup
followed by execution command ensures that memory contents are not accidentally erased due to external noise con-
ditions. At the rising edge of WE after the erase confirm command input, the internal write controller handles erase
and erase verify.
Once the erase process starts, the Read Status Register command may be entered to read the status register.
The system controller can detect the completion of an erase by monitoring the R/B output, or the Status bit (I/O 6) of
the Status Register. Only the Read Status command and Reset command are valid while erasing is in progress. When
the erase operation is completed, the Write Status Bit (I/O 0) may be checked.
Figure 20 details the sequence.
3.8 Multi Plane Erase.

Multiple plane erase, allows parallel erase of two blocks, one per each memory plane.
Block erase setup command (60h) must be repeated two times, each time followed by 1st block and 2nd block address
respectively (3 cycles each). As for block erase, D0h command makes embedded operation start. Multiplane erase
does not need any Dummy Busy Time between 1st and 2nd block address insertion. Address limitation required for
multiple plane program applies also to multiple plane erase, as well as operation progress can be checked like for mul-
tiple plane program. Figure 21 details the sequence
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H27U8G8F2M Series
3.9 Copy-back Program

Copy-Back program with Read for Copy-Back is configured to quickly and efficiently rewrite data stored in one page
without data reloading when the bit error is not in data stored. Since the time-consuming re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated
and the rest of the block also needs to be copied to the newly assigned free block. Copy-Back operation is a sequen-
tial execution of Read for Copy-Back and of copy-back program with the destination page address. A read operation
with "35h" command and the address of the source page moves the whole 4224-byte data into the internal data
buffer. A bit error is checked by sequential reading the data output. In the case where there is no bit error, the data do
not need to be reloaded. Therefore Copy-Back program operation is initiated by issuing Page-Copy Data-Input com-
mand (85h) with destination page address. Actual programming operation begins after Program Confirm command
(10h) is issued. Once the program process starts, the Read Status Register command (70h) may be entered to read
the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output,
or the Status bit(I/O 6) of the Status Register.
When the Copy-Back Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 22 & Figure 23). The
command register remains in Read Status command mode until another valid command is written to the command
register. During copy-back program, data modification is possible using random data input command (85h) as shown
in Figure 23.
Copy-back program operation is allowed only within same plane.
3.10 Multi-Plane Copy-Back Program

Multi-Plane Copy-Back Program is an extension of Copy-Back Program, for a single plane with 4224 byte page regis-
ters. Since the device is equipped with two memory planes, activating the two sets of 4224 byte page registers
enables a simultaneous programming of two pages. Figure 24 shows the command sequence for the multi-plane
copy-back operation.
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H27U8G8F2M Series
3.11 Read Status Register.

The device contains a Status Register which may be read to find out whether, program or erase operation is completed,
and whether the program or erase operation is completed successfully. After writing 70h command to the command
register, a read cycle outputs the content of the Status Register to the I/O pins on the falling edge of CE or RE, which-
ever occurs last. This two line control allows the system to poll the progress of each device in multiple memory connec-
tions even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to table
13 for specific Status Register definitions. The command register remains in Status Read mode until further commands
are issued to it. Therefore, if the status register is read during a random data output, the read command (00h) should
be given before starting read cycles.
3.12 Read ID.

The device contains a product identification mode, initiated by writing 90h to the command register, followed by an
address input of 00h. Five read cycles sequentially output the manufacturer code (ADh), and the device code and 3rd,
4th, 5th cycle ID, respectively. The command register remains in Read ID mode until further commands are issued to
it. Figure 26 shows the operation sequence, while tables 15 explain the byte meaning.
3.13 Reset.
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state
during random read, program or erase mode, the reset operation will abort these operations. The contents of memory
cells being altered are no longer valid, as the data will be partially programmed or erased. The command register is
cleared to wait for the next command, and the Status Register is cleared to value E0h when WP is high. Refer to table
13 for device status after reset operation. If the device is already in reset state a new reset command will not be
accepted by the command register. The R/B pin goes low for tRST after the Reset command is written. Refer to Figure
29.
Rev 0.2 / Jul. 2008 14

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Preliminary
H27U8G8F2M Series
4. OTHER FEATURES
4.1 Data Protection & Power On/Off Sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal
voltage detector disables all functions whenever Vcc is below about 2.0V(3.3V device). WP pin provides hardware pro-
tection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10us is
required before internal circuit gets ready for any command sequences as shown in Figure 30. The two-step command
sequence for program/erase provides additional software protection.
4.2 Ready/Busy.
The device has a Ready/Busy output that provides method of indicating the completion of a page program, erase,
copy-back and random read completion. The R/B pin is normally high and goes to low when the device is busy (after a
reset, read, program, erase operation). It returns to high when the internal controller has finished the operation. The
pin is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied.
Because pull-up resistor value is related to tR(R/B) and current drain during busy (Ibusy), an appropriate value can be
obtained with the following reference chart (Fig 31). Its value can be determined by the following guidance.
Rev 0.2 / Jul. 2008 15

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Preliminary
H27U8G8F2M Series
Parameter Symbol Min Typ Max Unit
Valid Block NVB 4016 - 4096 Blocks

Number
Table 6: Valid Blocks Numbers
NOTE:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
2. This number of valid blocks is based on single plane operations and may be little lower on two plane operations.
Symbol Parameter Value Unit
Ambient Operating Temperature (Commercial Temperature Range) 0 to 70 ℃

TA
Ambient Operating Temperature (Industrial Temperature Range) -40 to 85 ℃
TBIAS Temperature Under Bias -50 to 125 ℃
TSTG Storage Temperature -65 to 150 V
VIO(2) Input or Output Voltage -0.6 to 4.6 V
Vcc Supply Voltage -0.6 to 4.6 V
Table 7: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Refer also to the Hynix SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Rev 0.2 / Jul. 2008 16

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Preliminary
H27U8G8F2M Series
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&21752//(5 0ELW0ELW
+9*(1(5$7,21 '
1$1')ODVK (
&
$/(
0(025<$55$< 2
'
&/( (
:( 5
&( &200$1'
:3 ,17(5)$&(
/2*,&
5(
3$*(%8))(5
&200$1'
5(*,67(5
<'(&2'(5
'$7$
5(*,67(5
%8))(56
,2
Figure 4: Block Diagram
Rev 0.2 / Jul. 2008 17

1
Preliminary
H27U8G8F2M Series
3.3Volt
Parameter Symbol Test Conditions Unit
Min Typ Max
Sequential tRC=25ns
ICC1 - 15 30 mA
Read CE=VIL, IOUT=0mA
Operating
Current Program ICC2 - - 15 30 mA
Erase ICC3 - - 15 30 mA
CE=VIH,
Stand-by Current (TTL) ICC4 - 1 mA
WP=0V/Vcc
CE=Vcc-0.2,
Stand-by Current (CMOS) ICC5 - 10 50 uA
WP=0V/Vcc
Input Leakage Current ILI VIN=0 to Vcc (max) - - ± 10 uA
Output Leakage Current ILO VOUT =0 to Vcc (max) - - ± 10 uA
Input High Voltage VIH - 0.8xVcc - Vcc+0.3 V
Input Low Voltage VIL - -0.3 - 0.2xVcc V
Output High Voltage Level VOH IOH=-400uA 2.4 - - V
Output Low Voltage Level VOL IOL=2.1mA - - 0.4 V
IOL
Output Low Current (R/B) VOL=0.4V 8 10 - mA
(R/B)
Table 8: DC and Operating Characteristics
Value
Parameter
3.3Volt
Input Pulse Levels 0V to VCC
Input Rise and Fall Times 5ns
Input and Output Timing Levels VCC/2
Output Load (2.7V - 3.6V) 1 TTL GATE and CL=50pF
Table 9: AC Conditions
Rev 0.2 / Jul. 2008 18

1
Preliminary
H27U8G8F2M Series
Item Symbol Test Condition Min Max Unit

Input / Output Capacitance CI/O VIL=0V - 10 pF
Input Capacitance CIN VIN=0V - 10 pF
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter Symbol Min Typ Max Unit

Program Time / Multi-Plane Program Time tPROG - 200 700 us
Dummy Busy Time for Two Plane Program tDBSY - 1 2 us
Number of partial Program Cycles in the same page NOP - - 8 Cycles
Block Erase Time / Multi-Plane Block Erase Time tBERS - 1.5 2 ms
Read Cache Busy Time tRBSY - 3 tR us
Table 11: Program / Erase Characteristics
Rev 0.2 / Jul. 2008 19

1
Preliminary
H27U8G8F2M Series
3.3V
Parameter Symbol Unit
Min Max
CLE Setup time tCLS 12 ns
CLE Hold time tCLH 5 ns
CE setup time tCS 20 ns
CE hold time tCH 5 ns
WE pulse width tWP 12 ns
ALE setup time tALS 12 ns
ALE hold time tALH 5 ns
Data setup time tDS 12 ns
Data hold time tDH 5 ns
Write Cycle time tWC 25 ns
WE High hold time tWH 10 ns
Data Transfer from Cell to register tR 25 us
ALE to RE Delay tAR 10 ns
CLE to RE Delay tCLR 10 ns

Ready to RE Low tRR 20 ns
RE Pulse Width tRP 12 ns
WE High to Busy tWB 100 ns

Read Cycle Time tRC 25 ns
RE Access Time tREA 20 ns
RE High to Output High Z tRHZ 100 ns

CE High to Output High Z tCHZ 50 ns
CE High to Output hold tCOH 15 ns
RE High to Output Hold tRHOH 15 ns
RE Low to Output Hold tRLOH 5 ns

RE High Hold Time tREH 10 ns
Output High Z to RE low tIR 0 ns
CE Low to RE Low tCR 10 ns
Address to data loading time tADL 70 ns
WE High to RE low tWHR 80 ns
RE High to WE low tRHW 100 ns
Device Resetting Time (Read / Program / Erase) tRST 20/20/50(1) us
Write Protection time tWW(2) 100 ns
Table 12: AC Timing Characteristics

NOTE:
1. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5us
2. Program / Erase Enable Operation : WP high to WE High.
Program / Erase Disable Operation : WP Low to WE High.
Rev 0.2 / Jul. 2008 20

1
Preliminary
H27U8G8F2M Series
IO Page Program Block Erase Read Cache Read CODING
0 Pass / Fail Pass / Fail NA NA Pass: ‘0’ Fail: ‘1’
1 Plane 0 Pass/Fail Plane 0 Pass/Fail NA NA Plane 0, Pass : ‘0’ Fail : ‘1’
2 Plane 1 Pass/Fail Plane 1 Pass/Fail NA NA Plane 1, Pass : ‘0’ Fail : ‘1’
3 NA NA NA NA -
4 NA NA NA NA -
5 Ready / Busy Ready / Busy P/E/R Active: ‘0’ Idle:’1’

Ready / Busy
Controller Bit
6 Ready / Busy Ready / Busy Ready / Busy Ready/Busy Busy: ‘0’ Ready:’1’
Protected: ‘0’
7 Write Protect Write Protect Write Protect Write Protect
Not Protected: ‘1’
Table 13 : Status Register Coding
DEVICE IDENTIFIER CYCLE DESCRIPTION
1st Manufacturer Code
2nd Device Identifier
3rd Internal chip number, cell Type, etc.
4th Page Size, Block Size, Spare Size, Organization
5th Multiplane information
Table 14: Device Identifier Coding
Bus 1st cycle 2nd cycle 3rd 4th 5th

Part Number Voltage
Width (Manufacture Code) (Device Code) cycle cycle cycle
H27U8G8F2M 3.3V x8 ADh D3h 10h A6h 34h
Table 15: Read ID Data Table
Rev 0.2 / Jul. 2008 21

1
Preliminary
H27U8G8F2M Series
Description IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0

1 0 0
2 0 1
Die / Package
4 1 0
8 1 1
2 Level Cell 0 0
4 Level Cell 0 1
Cell Type
8 Level Cell 1 0
1 1
16 Level Cell
1 0 0
Number of
2 0 1
Simultaneously
4 1 0
Programmed Pages
8 1 1
Interleave Program Not 0
Between multiple chips Supported 1
Not 0
Write Cache
Supported 1
Table 16: 3rd Byte of Device Idendifier Description
Description IO7 IO6 IO5-4 IO3 IO2 IO1-0

1KB 0 0
Page Size 2KB 0 1
(Without Spare Area) 4KB 1 0
8KB 1 1
Spare Area Size 8 0
(Byte / 512Byte) 16 1
50ns 0 0
30ns 0 1
Serial Access Time
25ns 1 0
Reserved 1 1
64K 0 0
Block Size 128K 0 1
(Without Spare Area) 256K 1 0
512KB 1 1
X8 0
Organization
X16 1
Table 17: 4th Byte of Device Identifier Description
Rev 0.2 / Jul. 2008 22

1
Preliminary
H27U8G8F2M Series
Description IO7 IO6 IO5 IO4 IO3 IO2 IO1 IO0

1 0 0
2 0 1
Plane Number
4 1 0
8 1 1
512Mb 0 0 0
1Gb 0 0 1
2Gb 0 1 0
Plane Size 4Gb 0 1 1
(w/o redundant Area) 8Gb 1 0 0
Reserved 1 0 1
Reserved 1 1 0
Reserved 1 1 1
Reserved 0 0 0
Table 18: 5rd Byte of Device Idendifier Description
Rev 0.2 / Jul. 2008 23

1
Preliminary
H27U8G8F2M Series
W&/6 W&/+
&/(
W&6 W&+
&(
W:3
:(
W$/6 W$/+
$/(
W'6 W'+
,2[ &RPPDQG
Figure 5: Command Latch Cycle
W&/6
&/(
W&6
W:& W:& W:& W:&

&(
W:3 W:3 W:3 W:3

:(
W:+ W:+ W:+ W:+
W$/6 W$/+ W$/6 W$/+ W$/6 W$/+ W$/6 W$/+ W$/6 W$/+
$/(
W'+ W'+ W'+ W'+ W'+

W'6 W'6 W'6 W'6 W'6
,2[ &RO$GG &RO$GG 5RZ$GG 5RZ$GG 5RZ$GG
Figure 6: Address Latch Cycle
Rev 0.2 / Jul. 2008 24

1
Preliminary
H27U8G8F2M Series
W&/+
&/(
W&+
&(
W:&
W$/6
$/(
W:3 W:3 W:3

:(
W:+ W:+
W'+ W'+ W'+
W'6 W'6 W'6
,2[ ',1 ',1ILQDO
1RWHV',1ILQDOPHDQV%\WHV
Figure 7: Input Data Latch Cycle
Rev 0.2 / Jul. 2008 25

1
Preliminary
H27U8G8F2M Series
W5&
&(
W&+=
W5(+
W5($ W5($ W5($ W&2+
5(
W5+= W5+=
W5+2+
,2[ 'RXW 'RXW 'RXW
W55
5%
1RWHV7UDQVLWLRQLVPHDVXUHGDWP9IURPVWHDG\VWDWHYROWDJHZLWKORDG
7KLVSDUDPHWHULVVDPSOHGDQGQRWWHVWHG W&+=W5+=
W5+2+VWDUWVWREHYDOLGZKHQIUHTXHQF\LVORZHUWKDQ0+]
Figure 8: Sequential Out Cycle after Read (CLE=L, WE=H, ALE=L)
W&5
&(
W5& W&+=
W53 W5(+ W&2+
5(
W5+=
W5($ W5($
W5/2+ W5+2+
,2[ 'RXW 'RXW

W55
5%
1RWHV7UDQVLWLRQLVPHDVXUHGDWP9IURPVWHDG\VWDWHYROWDJHZLWKORDG
7KLVSDUDPHWHULVVDPSOHGDQGQRWWHVWHG W&+=W5+=
W5/2+LVYDOLGZKHQIUHTXHQF\LVKLJKHUWKDQ0+]
W5+2+VWDUWVWREHYDOLGZKHQIUHTXHQF\LVORZHUWKDQ0+]
Figure 9: Sequential Out Cycle after Read (EDO Type CLE=L, WE=H, ALE=L)
Rev 0.2 / Jul. 2008 26

1
Preliminary
H27U8G8F2M Series
W&/5
&/( W&/6
W&/+
W&6
&(
W&+
W:3
:( W&+=
W&5
W&2+
W:+5
5(
W'+ W5($ W5+=
W'6 W,5
W5+2+
,2[ K 6WDWXV2XWSXW
Figure 10: Status Read Cycle
tCLR
CLE
CE
tWC
WE
tWB
tAR
ALE
tRHZ
tR tRC
RE
tRR
I/Ox 00h Col.Add1 Col.Add2 Row

G Add1 Row Add2 Row Add3 30h Dout N Dout N+ Dout M
Column Address Row Address
Busy
R/D
Figure 11: Read1 Operation (Read One Page)
Rev 0.2 / Jul. 2008 27

1
Preliminary
H27U8G8F2M Series
CLE
CE
WE
tWB tCHZ
tAR tCOH
ALE
tR tRC
RE
tRR
Col. Col. Row Row Row Dout Dout Dout

I/Ox 00h Add1 Add2 Add1 Add2 Add3 30h N N+1 N+2
Column Address Row Address
R/B Busy
Figure 12: Read1 Operation intercepted by CE
Rev 0.2 / Jul. 2008 28

Rev 0.2 / Jul. 2008
&/(
W&/5
&(
:(
W:% W5+:
W:+5
W$5
$/(
W5 W5& W5($
5(
W55
Figure 13: Random Data output

,2[ K &RO$GG &RO$GG 5RZ$GG 5RZ$GG 5RZ$GG K 'RXW1 'RXW1 K &RO$GG &RO$GG (K 'RXW0 'RXW0
&ROXPQ$GGUHVV 5RZ$GGUHVV &ROXPQ$GGUHVV
5% %XV\
H27U8G8F2M Series
1

Preliminary
29
1
Preliminary
H27U8G8F2M Series
A
CLE
CE
WE
ALE
RE
Col. Col. Row. Row. Row.

I/Ox 00h Add1 Add2 Add1 Add2 Add3
30h 31h Dout N Dout N+ Dout M 31h
tR tRBSY
R/B
A 1 2 3
CLE
CE
WE
ALE
RE
I/Ox
31h Dout N Dout N+ Dout M 31h Dout N Dout N+ Dout M 3Fh Dout N Dout N+ Dout M
tRBSY tRBSY tRBSY

R/B
4 5 6 7 8 9
Data Cache Page N Page N + 1 Page N + 2 Page N + 3

1 2 3 4 5 6 7 8 9
Page Buffer Page N Page N + 1 Page N + 2 Page N + 3
1 3 5 7
Cell Array
Page N
Page N + 1
Page N + 2
Page N + 3
Figure 14: Read Operation with Read Cache
Rev 0.2 / Jul. 2008 30

CLE
CE
tWC tWC
Rev 0.2 / Jul. 2008

WE
tWB
ALE
tR
RE
Row. Row. Row. Row. Row. Row.

60h 60h 30h
I/Ox Add1 Add2 Add3 Add1 Add2 Add3
Row Address Row Address
A13 ~ A18 : Fixed “Low” A13 ~ A18 : Valid

A19 : Fixed “Low” A19 : Fixed “High” Busy
R/B A20 ~ A30 : Fixed “Low” A20 ~ A30 : Valid
1
CLE
tCLR tCLR
CE
tWC tWC
WE
tWHR tWHR
tREA tRHW tREA

ALE
tRC tRC
RE
Col. Co2. Row. Row. Row. Col. Co2. Dout Dout Col. Co2. Row. Row. Row. Col. Co2. Dout Dout
00h 05h E0h 00h 05h E0h
I/Ox Add1 Add1 Add1 Add2 Add3 Add1 Add1 N N+1 Add1 Add1 Add1 Add2 Add3 Add1 Add1 M M+1
Figure 15: Multi-Plane Page Read Operation with Random Data Out
Column Address Row Address Column Address Column Address Row Address Column Address
A0 ~ A12 : Fixed “Low” A0 ~ A12 : Valid A0 ~ A12 : Fixed “Low” A0 ~ A12 : Valid
A13 ~ A18 : Fixed “Low” A13 ~ A18 : Fixed “Low”
R/B A19 : Fixed “Low” A19 : Fixed “High”
A20 ~ A30 : Fixed “Low” A20 ~ A30 : Fixed “Low”
1
H27U8G8F2M Series
1

Preliminary
31
1
Preliminary
H27U8G8F2M Series
W5
5%
&RPPDQG
LQSXW
K $GGUHVVLQSXW K $GGUHVVLQSXW K

$a$)L[HG³/RZ´ $a$9DOLG
$)L[HG³/RZ´ $)L[HG³+LJK´
W5%6<
5%
&RPPDQG
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K K $GGUHVVLQSXW K $GGUHVVLQSXW (K 'DWDRXWSXW
$a$)L[HG³/RZ´
$)L[HG³/RZ´
$a$)L[HG³/RZ´
5%
&RPPDQG
LQSXW
K $GGUHVVLQSXW K $GGUHVVLQSXW (K 'DWDRXWSXW

$a$)L[HG³/RZ´
$)L[HG³+LJK´ 5HWXUQWR
$a$)L[HG³/RZ´ 5HSHDWDPD[RIWLPHV
W5%6<
5%
&RPPDQG
LQSXW
)K K $GGUHVVLQSXW K $GGUHVVLQSXW (K 'DWDRXWSXW
$a$)L[HG³/RZ´
$)L[HG³/RZ´
$a$)L[HG³/RZ´
5%
&RPPDQG
LQSXW
K $GGUHVVLQSXW K $GGUHVVLQSXW (K 'DWDRXWSXW
$a$)L[HG³/RZ´
$)L[HG³+LJK´
$a$)L[HG³/RZ´
Figure 16: Multi-Plane Page Read with cache
Rev 0.2 / Jul. 2008 32

1
Preliminary
H27U8G8F2M Series
&/(
&(
W:& W:& W:&
:(
W$'/
W:% W352* W:+5
$/(
5(
,2[ K &RO &RO 5RZ 5RZ 5RZ 'LQ 'LQ K K ,2
$GG $GG $GG $GG $GG 1 0
6HULDO'DWD XSWRP%\WH 3URJUDP 5HDG6WDWXV
,QSXW&RPPDQG &ROXPQ$GGUHVV 5RZ$GGUHVV
6HULDO,QSXW &RPPDQG &RPPDQG
5%
,2 6XFFHVVIXO3URJUDP
,2 (UURULQ3URJUDP
127(6W$'/LVWKHWLPHIURPWKH:(ULVLQJHGJHRIILQDODGGUHVVF\FOHWRWKH:(ULVLQJHGJHRIILUVWGDWDF\FOH
Figure 17: Page Program Operation
Rev 0.2 / Jul. 2008 33

7ZR3ODQH3DJH3URJUDP2SHUDWLRQ
Rev 0.2 / Jul. 2008

&/(
&(
W:&
:(
W:% W'%6< W:% W352* W:+5
$/(
5(
'LQ 'LQ K 'LQ 'LQ K
K &RO$GG &RO$GG 5RZ$GG 5RZ$GG 5RZ$GG 1 0 K &RO$GG &RO$GG 5RZ$GG 5RZ$GG 5RZ$GG 1 K ,2
,2[ 0
6HULDO'DWD XSWR%\WH'DWD 3URJUDP 3URJUDP
,QSXW&RPPDQG &ROXPQ$GGUHVV 3DJH5RZ$GGUHVV &RPPDQG 6HULDO,QSXW &RPPDQG
6HULDO,QSXW 'XPP\ 7UXH
5%
W'%6<XV 7\S
XV 0D[
,2 6XFFHVVIXO3URJUDPLQSODQH
,2 (UURULQSODQH
,2 (UURULQSODQH
([ 7ZR3ODQH3DJH3URJUDP
W'%6< W352*
5%
K $GGUHVV 'DWD,QSXW K K $GGUHVV 'DWD,QSXW K K

,2a
Figure 18: Multiple plane page program

1RWH
&RO$GG 5RZ$GG &RO$GG 5RZ$GG
%\WH'DWD %\WH'DWD
$a$9DOLG $a$9DOLG
$a$)L[HGµ/RZ¶ $a$9DOLG
$)L[HGµ/RZ¶ $)L[HGµ+LJK¶

1RWH$Q\FRPPDQGEHWZHHQKDQGKLVSURKLEWHGH[FHSWKDQG))
H27U8G8F2M Series
1

Preliminary
34
Rev 0.2 / Jul. 2008
&/(
&(
W:& W:& W:&
:(
W$'/ W$'/
W:% W352* W:+5
$/(
5(
K &RO$GG &RO$GG 5ZR$GG 5ZR$GG 5ZR$GG 'LQ 'LQ K &RO$GG &RO$GG 'LQ 'LQ K K ,2
,2[ 1 0 - .
Figure 19: Random Data In

6HULDO'DWD 5DQGRP'DWD 3URJUDP 5HDG6WDWXV
,QSXW&RPPDQG &ROXPQ$GGUHVV 5RZ$GGUHVV 6HULDO,QSXW ,QSXW&RPPDQG &ROXPQ$GGUHVV 6HULDO,QSXW &RPPDQG &RPPDQG
5%
127(6W$'/LVWKHWLPHIURPWKH:(ULVLQJHGJHRIILQDODGGUHVVF\FOHWRWKH:(UVLQJHGJHRIILUVWGDWDF\FOH
H27U8G8F2M Series
1

Preliminary
35
1
Preliminary
H27U8G8F2M Series
&/(
&(
W:&
:(
W:% W%(56
$/(
5(
,2[ K 5RZ$GG 5RZ$GG 5RZ$GG 'K K ,2

%ORFN$GGUHVV
5%
%86<
$XWR%ORFN(UDVH6HWXS&RPPDQG 5HDG6WDWXV ,2 6XFFHVVIXO(UDVH
(UDVH&RQILUP&RPPDQG &RPPDQG ,2 (UURULQ(UDVH
Figure 20: Block Erase Operation (Erase One Block)
&/(
&(
W:& W:&
:(
W:% W%(56 W:+5
$/(
5(
,2[ K 5RZ$GG 5RZ$GG 5RZ$GG K 5RZ$GG 5RZ$GG 5RZ$GG 'K K ,2
5RZ$GGUHVV 5RZ$GGUHVV
5% %XV\
%ORFN(UDVH6HWXS&RPPDQG %ORFN(UDVH6HWXS&RPPDQG (UDVH&RQILUP&RPPDQG

5HDG6WDWXV&RPPDQG
,2 (UURULQSODQH
,2 (UURULQSODQH
([ $GGUHVV5HVWULFWLRQIRU7ZR3ODQH%ORFN(UDVH2SHUDWLRQ
5% W%(56
,2a K $GGUHVV K $GGUHVV 'K K
5RZ$GG 5RZ$GG
$a$)L[HGµ/RZ¶ $a$)L[HGµ/RZ¶
$)L[HGµ/RZ¶ $)L[HGµ+LJK¶
Figure 21: Multiple plane erase operation
Rev 0.2 / Jul. 2008 36

Rev 0.2 / Jul. 2008
&(
&/(
$/(
:(
W:%
5(
W:&
W352*
W5
&RO &RO 5RZ 5RZ 5RZ &RO &RO 5RZ 5RZ 5RZ 'DWD 'DWD
,2[ K DGG DGG DGG DGG K K DGG DGG DGG DGG DGG K K ,2
DGG 1 0
5HDGFRQILUP &RS\EDFN
5HDGFRPPDQG &ROXPQDGGUHVV 3DJHURZDGGUHVV &ROXPQDGGUHVV SDJHURZDGGUHVV (UURUFRUUHFWLRQGDWDLQSXW 3URJUDP
&RPPDQG
FRPPDQG
5%
W5 W552*
5%
Figure 22: Copy Back Program Operation

,2 K DGGUHVV K K DGGUHVV 'DWDLQ K K ,2[
&RODGG 5RZDGG &RODGG 5RZDGG

H27U8G8F2M Series
1

Preliminary
37
&/(
Rev 0.2 / Jul. 2008

&(
W:&
W:% W:+5
:(
W352*
W:%
$/(
W5 W5&
5( W$'/
&RO &RO 5RZ 5RZ 5RZ 'DWD K

&RO &RO 5RZ 5RZ 5RZ 'DWD K
&RO &RO 'DWD K
K K 'DWD 'DWD 'DWD K ,2
,2[ $GG $GG $GG $GG $GG $GG $GG $GG $GG $GG $GG $GG
&ROXPQ$GGUHVV 5RZ$GGUHVV 5HDO6WDWXV&RPPDQG
'DWD2XW &ROXPQ$GGUHVV 5RZ$GGUHVV &ROXPQ$GGUHVV 'DWD,Q
5%
%XV\
%XV\
&RS\%DFN'DWD ,2 6XFHVVIXO3URJUDP
,QSXW&RPPDQG ,2 (UURULQ3URJUDP
127(6W$'/LVWKHWLPHIURPWKH:(ULVLQJHGJHRIILQDODGGUHVVF\FOHWRWKH:(ULVLQJHGJHRIILUVWGDWDF\FOH
W5 W352*
5%
Figure 23: Copy Back Program Operation with Random Data Input
,2a K DGGUHVV K 'DWDRXW K DGGUHVV 'DWD,Q K DGGUHVV 'DWD,Q K K ,2[
&RODGG 5RZDGG &RODGG 5RZDGG &RODGG

H27U8G8F2M Series
1

Preliminary
38
1
Preliminary
H27U8G8F2M Series
W5
5%
,2[ K $GGUHVV &\FOH K $GGUHVV &\FOH K
5RZ$GG 5RZ$GG
5%
,2[ K $GGUHVV &\FOH K $GGUHVV &\FOH (K 'DWD2XWSXW
&RO$GG 5RZ$GG &RO$GG

$a$)L[HG³/RZ´
$)L[HG³/RZ´
$a$)L[HG³/RZ´
5%

$a$)L[HG³/RZ´
$)L[HG³+LJK´
$a$)L[HG³/RZ´
W'%6< W352*
5%
,2[ K $GG &\FOHV K K $GG &\FOHV K K ,2

'HVWLQDWLRQ$GGUHVV 'HVWLQDWLRQ$GGUHVV
$a$)L[HG³/RZ´ $a$)L[HG³/RZ´ ,2 6XFFHVVIXO3URJUDPLQSODQH
$a$)L[HG³/RZ´ $a$9DOLG ,2 (UURULQSODQH
$)L[HG³/RZ´ $)L[HG³+LJK´ ,2 6XFFHVVIXO3URJUDPLQSODQH
$a$)L[HG³/RZ´ $a$9DOLG ,2 (UURULQSODQH
Figure 24: Multi plane copyback program Operation
Rev 0.2 / Jul. 2008 39

1
Preliminary
H27U8G8F2M Series
W5
5%
,2[ K $GGUHVV &\FOH K $GGUHVV &\FOH K
5RZ$GG 5RZ$GG
5%

$a$)L[HG³/RZ´
$)L[HG³/RZ´
$a$)L[HG³/RZ´
5%

$a$)L[HG³/RZ´
$)L[HG³+LJK´
$a$)L[HG³/RZ´
W'%6<
5%
,2[ K $GGUHVV &\FOHV 'DWD K $GGUHVV &\FOHV 'DWD K

'HVWLQDWLRQ$GGUHVV
$a$9DOLG
$a$)L[HG³/RZ´
$)L[HG³/RZ´
$a$)L[HG³/RZ´
W352*
5%
,2[ K $GGUHVV &\FOHV 'DWD K $GGUHVV &\FOHV 'DWD K

'HVWLQDWLRQ$GGUHVV
$a$9DOLG
$a$9DOLG
$)L[HG³+LJK´
$a$9DOLG
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. Any command between 11h and 81h is prohibited except 70h and FFh.
Figure 25: Multi-plane Copy-Back Program Operation with Random Data Input
Rev 0.2 / Jul. 2008 40

1
Preliminary
H27U8G8F2M Series
&/(
&(
:(
W$5
$/(
5(
W5($
,2[ K K $'K 'K K $K K

5HDG,'&RPPDQG $GGUHVVF\FOH 0DNHU&RGH 'HYLFH&RGH UG&\FOH WK&\FOH WK&\FOH
Figure 26: Read ID Operation
Rev 0.2 / Jul. 2008 41

1
Preliminary
H27U8G8F2M Series
System Interface Using CE don’t care

To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below.
So, it is possible to connect NAND Flash to a microporcessor. The only function that was removed from standard NAND
Flash to make CE don’t care read operation was disabling of the automatic sequential read function.
&/(
&(GRQ¶WFDUH
&(
:(
$/(
,2[ K 6WDUW$GG &\FOH 'DWD,QSXW 'DWD,QSXW K
Figure 27: Program Operation with CE don’t-care.
&/(
,IVHTXHQWLDOURZUHDGHQDEOHG
&(PXVWEHKHOGORZGXULQJW5 &(GRQ¶WFDUH
&(
5(
$/(
5%
W5
:(
,2[ K 6WDUW$GG &\FOH K 'DWD2XWSXW VHTXHQWLDO
Figure 28: Read Operation with CE don’t-care.
Rev 0.2 / Jul. 2008 42

1
Preliminary
H27U8G8F2M Series
:(
$/(
&/(
5(
,2 ))K
W567
5%
Figure 29: Reset Operation
9 9
9 9
9&&
9
GRQ¶W GRQ¶W
FDUH FDUH
&( 9,+
9,/ PVPD[ 2SHUDWLRQ 9,/

:3
XVPD[
,QYDOLG GRQ¶W
FDUH
5HDG\%XV\
Figure 30: Power On and Data Protection Timing
VTH = 2.5 Volt for 3.3 Volt Supply devices
Rev 0.2 / Jul. 2008 43

1
Preliminary
H27U8G8F2M Series
5S LEXV\
9FF
5HDG\ 9FF
5%
RSHQGUDLQRXWSXW 92/992+9 92+
92/ %XV\
WI WU
*1'
'HYLFH
)LJ5SYVWUWI 5SYVLEXV\
#9FF 97D &&/ S)

LEXV\
Q P
WUWI>V@

LEXV\>$@
Q

P

Q P
WI
N N N N
5S RKP
5SYDOXHJXLGHQFH
9FF 0D[ 92/ 0D[ 9

5S PLQ
,2/,/ P$,/
ZKHUH,/LVWKHVXPRIWKHLQSXWFXUUQWVRIDOOGHYLFHVWLHGWRWKH5%SLQ
5S PD[ LVGHWHUPLQHGE\PD[LPXPSHUPLVVLEOHOLPLWRIWU
Figure 31: Ready/Busy Pin electrical specifications
Rev 0.2 / Jul. 2008 44

1
Preliminary
H27U8G8F2M Series
Bad Block Management

Devices with Bad Blocks have the same quality level and the same AC and DC characteristics as devices where all the
blocks are valid. A Bad Block does not affect the performance of valid blocks because it is isolated from the bit line and
common source line by a select transistor. The devices are supplied with all the locations inside valid blocks
erased(FFh). The Bad Block Information is written prior to shipping. Any block where the 1st Byte in the spare area of
the 1st or 2nd th page (if the 1st page is Bad) does not contain FFh is a Bad Block. The Bad Block Information must be
read before any erase is attempted as the Bad Block Information may be erased. For the system to be able to recog-
nize the Bad Blocks based on the original information it is recommended to create a Bad Block table following the flow-
chart shown in Figure 32. The 1st block, which is placed on 00h block address is guaranteed to be a valid block.
67$57
%ORFN$GGUHVV
%ORFN
,QFUHPHQW
%ORFN$GGUHVV
'DWD 1R 8SGDWH
))K" %DG%ORFNWDEOH
<HV
/DVW 1R
EORFN"
<HV
(1'
Figure 32: Bad Block Management Flowchart
NOTE :
1. Make sure that either the 1st or 2nd page of every initial block has not FFh data at the column address of 4096.
Rev 0.2 / Jul. 2008 45

1
Preliminary
H27U8G8F2M Series
Bad Block Replacement

Over the lifetime of the device additional Bad Blocks may develop. In this case the block has to be replaced by copying
the data to a valid block. These additional Bad Blocks can be identified as attempts to program or erase them will give
errors in the Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, the block can be
replaced by re-programming the current data and copying the rest of the replaced block to an available valid block.
Refer to Table 19 and Figure 33 for the recommended procedure to follow if an error occurs during an operation.
Operation Recommended Procedure

Erase Block Replacement
Program Block Replacement
Read ECC (with 1bit/512byte)
Table 19: Block Failure
%ORFN$ %ORFN%

'DWD 'DWD
WK WK
QSDJH )DLOXUH QSDJH

))K ))K
%XIIHUPHPRU\RIWKHFRQWUROOHU
Figure 33: Bad Block Replacement
NOTE :
1. An error occurs on the Block A during program or erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. Nth data of block A which is in controller buffer memory is copied into nth page of Block B
4. Bad block table should be updated to prevent from erasing or programming Block A
Rev 0.2 / Jul. 2008 46

1
Preliminary
H27U8G8F2M Series
Write Protect Operation
The Erase and Program Operations are automatically reset when WP goes Low (tWW = 100ns, min). The operations
are enabled and disabled as follows (Figure 34~37)
:(
:(
W ::
W ::
,2[ K K

,2[ K K
:3
:3
5%
5%
Figure 34: Enable Programming Figure 35: Disable Programming
:( :(
W :: W ::
,2[ K 'K ,2[ K 'K
:3 :3
5% 5%
Figure 36: Enable Erasing Figure 37: Disable Erasing
Rev 0.2 / Jul. 2008 47

1
Preliminary
H27U8G8F2M Series

H $ $
' %
$ Į /
',(
( &
(
&3
Figure 38: 48-TSOP1 - 48-lead Plastic Thin Small Outline, 12 x 20mm, Package Outline
millimeters
Symbol
Min Typ Max
A 1.200
A1 0.050 0.150
A2 0.980 1.030
B 0.170 0.250
C 0.100 0.200
CP 0.100
D 11.910 12.000 12.120
E 19.900 20.000 20.100
E1 18.300 18.400 18.500
e 0.500
L 0.500 0.680
alpha 0 5
Table 20: 48-TSOP1 - 48-lead Plastic Thin Small Outline,

12 x 20mm, Package Mechanical Data
Rev 0.2 / Jul. 2008 48

1
Preliminary
H27U8G8F2M Series
The backward compatibility (2KByte/page operation)
1. Page program
5% W'%6< W352*
,2a K $GGUHVV 'DWD,QSXW K K $GGUHVV 'DWD,QSXW K K
&RO$GG 5RZ$GG 1RWH &RO$GG 5RZ$GG
XSWR%\WH'DWD XSWR%\WH'DWD
$a$9DOLG $a$9DOLG
$9DOLG $0XVWEHVDPHZLWKWKHSUHYLRXV
Note: Any command between 11h and 80h is prohibited except 70h and FFh.
2. Copy back program
W5
5%
,2[ K $GG &\FOHV K 'DWD2XWSXW
&RO$GG 5RZ$GG

6RXUFH$GGUHVV
W'%6< W352*
5%
K $GG &\FOHV 'DWD K K $GG &\FOHV 'DWD K
,2[
XSWR%\WH'DWD XSWR%\WH'DWD
'HVWLQDWLRQ$GGUHVV 'HVWLQDWLRQ$GGUHVV
$a$9DOLG $a$9DOLG
$0XVWEHVDPHZLWKWKHVRXUFHSODQH $0XVWEHVDPHZLWKWKHVRXUFHSODQH
Note:
1. Copy-Back Program operation is allowed only within the same memory plane.
Rev 0.2 / Jul. 2008 49

1
Preliminary
H27U8G8F2M Series
3. Copy back program with random data input
W5
5%
,2[ K $GG &\FOHV K 'DWD2XWSXW
&RO$GG 5RZ$GG

6RXUFH$GGUHVV
W'%6<
5%
,2[ K $GG &\FOHV 'DWD K $GG &\FOHV 'DWD K

XSWR%\WH'DWD
'HVWLQDWLRQ$GGUHVV
$a$9DOLG
$a$)L[HG³/RZ´
$PXVWEHVDPHZLWKWKHVRXUFHSODQH
$a$)L[HG³/RZ´
W352*
5%
,2[ K $GG &\FOHV 'DWD K $GG &\FOHV 'DWD K

XSWR%\WH'DWD
'HVWLQDWLRQ$GGUHVV
$a$9DOLG
$a$9DOLG
$0XVWEHVDPHZLWKWKHVRUXFHSODQH
$a$9DOLG
Note:
1. Copy-Back Program operation is allowed only within the same memory plane.
Rev 0.2 / Jul. 2008 50

1
Preliminary
H27U8G8F2M Series
MARKING INFORMATION - TSOP1
M a rk in g E x a m p le
K O R
H 2 7 U 8 G 8 F 2 M x x - x x
Y W W x x
- h y n ix : H yn ix S ym bo l
- KOR : O rig in C ou n try
- H 2 7 U 8 G 8 F 2 M x x -x x : P a rt N u m b er
H : H yn ix
2 7 : N A N D Fla sh
U : P o w e r S u p p ly : U (2 .7 V ~ 3 .6 V )
8 G : D e n sity : 8 G b it
8 : B it O rg an iza tio n : 8 (x8 )
F : C la ssifica tion : S in g le Leve l C e ll+ S in g le D ie + Larg e B lo ck
2 : M o de : 2 (1 n C E & 1 R /n B ; S e q u e n tia l R o w R e a d D isa ble )
M : V e rsio n : 1 st G en e ratio n
x : P acka ge T yp e : T (4 8-T S O P 1 )
x : P acka ge M a te ria l : B la n k(N orm a l), R (L e a d & H a lo g en F re e )
x : B ad B lo ck : B (In clu de d B a d B lock ), S (1 ~ 5 B a d B lock ),

P (A ll G o od B lo ck)
x : O p eratin g T e m perature : C (0 ℃ ~ 7 0℃ ), I(-4 0℃ ~ 8 5 ℃ )
- Y : Y e ar (ex: 5 = ye ar 2 0 0 5 , 6= ye a r 2 0 0 6 )
- w w : W o rk W eek (e x: 12 = w ork w eek 12 )
- x x : P roce ss C o d e
N o te
- C a p ita l L e tte r : Fixe d Ite m
- S m a ll L e tte r : N on -fixe d Ite m
Rev 0.2 / Jul. 2008 51

H27U8G8F2M Datasheet

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1

8Gb NAND FLASH

Revision No. History Draft Date Remark

0.0 Initial Draft. Aug. 23. 2007 Preliminary

1) Change Program Characteristics tDBSY

2) Change tCBSY to tDBSY

1) Correct Table 5. Mode Selection.

CLE ALE CE WE RE WP MODE

0.2 L L L H H X During Read (Busy) Jul. 4. 2008 Preliminary

Rev 0.2 / Jul. 2008 2

HIGH DENSITY NAND FLASH MEMORIES STATUS REGISTER

MULTIPLANE ARCHITECTURE ELECTRONIC SIGNATURE

BLOCK SIZE PACKAGE

COPY BACK PROGRAM

FAST BLOCK ERASE

Rev 0.2 / Jul. 2008 3

The H27U8G8F2M Series are available in 48-TSOP1 12 x 20 mm.

1.1 Product List

PART NUMBER ORGANIZATION Vcc RANGE PACKAGE

Rev 0.2 / Jul. 2008 4

IO7 - IO0 Data Input / Outputs

Figure1: Logic Diagram Table 1: Signal Names

Figure 2. 48TSOP1 Contact, x8 Device

Rev 0.2 / Jul. 2008 5

1.2 PIN DESCRIPTION

Pin Name Description

Table 2: Pin Description

Rev 0.2 / Jul. 2008 6

3DJH . %\WHV

Figure 3: Array Organization

IO0 IO1 IO2 IO3 IO4 IO5 IO6 IO7

Table 3: Address Cycle Map

Rev 0.2 / Jul. 2008 7

Table 4: Command Set

CLE ALE CE WE RE WP MODE

Table 5: Mode Selection

2.1 Command Input.

2.2 Address Input.

2.3 Data Input.

2.4 Data Output.

2.5 Write Protect.

Rev 0.2 / Jul. 2008 9

3.1 Page Read.

3.2 Cache Read

3.3 Multi-Plane Page Read

Rev 0.2 / Jul. 2008 10

3.4 Multi-Plane Page Read With Cache

3.5 Page Program.

3.6 Multi Plane Program.

Rev 0.2 / Jul. 2008 11

3.7 Block Erase.

3.8 Multi Plane Erase.

Rev 0.2 / Jul. 2008 12

3.9 Copy-back Program

3.10 Multi-Plane Copy-Back Program

Rev 0.2 / Jul. 2008 13

3.11 Read Status Register.

3.12 Read ID.

Rev 0.2 / Jul. 2008 14

4.1 Data Protection & Power On/Off Sequence

Rev 0.2 / Jul. 2008 15

Parameter Symbol Min Typ Max Unit

Valid Block NVB 4016 - 4096 Blocks

3DJH . %\WHV