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Fully Integrated Electronic Stability Control/electronic Stability Program Braking Chip
Fully Integrated Electronic Stability Control/electronic Stability Program Braking Chip
SC900719
VCCA
VBAT1 VCCA_SUP
VPWR VCCA_SW
CP
VPRE_SUP VCC5
VPRE_D VCC3P3
VBAT2 VCC5_EXT
VPRE_G
VPRE_S RST
PD_D SO
PD_G SI
CSB
SCLK
PD_S
TXD 2 MCU
M
FRW_G RXD 2
VBAT1 TxK
RxK
HD_D WSAI
4
WSOx
HD_G
VSO_IN
HD_S VSO
HSD1 3.3V(Debug mode)
LSD1 DEBUG
Solenoid LSD2
LSD3 WSx_SUP 2
Coil
LSD4 WSx_HS 4
LSD5
LSD6
IGN Wheel
HSD2
speed
LSD7 CANH 2
LSD8 VBAT1 Sensor
Solenoid LSD9 CANL 2
Coil LSD10
LSD11 ISOK
LSD12 GND_A GND_D GND_P WLDx 2
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NXP Semiconductors 2
1 Orderable parts
This section describes the part numbers available to be purchased along with their differences.
Notes:
1. To order parts in tape and reel, add the R2 suffix to the part number.
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2 Internal block diagram
VPWR2
VPWR1
CP
Charge Pump Band
Gap 2 Supervision
VPRE_SUP
Pre-linear
VPRE_D
VPRE_G Regulator
VPRE_S Band Die Temperature
Gap 1 Warning
VINT_A Internal Regulators
VINT_D DOSV
GND_D2
5.0 V Linear DEBUG
Regulator Internal Functions
VCC5 IGN
RSTB
VCC3P3
2
WSxx_SUP
with
L-Bist & K-Line Interface RXK
HD_D
HD_G A-Bist or
HD_S HS Pre-driver TXK
Vehicle Speed ISO_VSO2
Output 2
LSDx
Digital Valves 5.0 V Supply for VPRE_CAN
4 (x4Ch) 300 mΩ
LSDx CAN (x2Ch) 2
VCCx_CAN
LS Warning Lamp
3
Pre-driver 2 WLDx
ADINx 10-bit ADC (x2Ch)
(x3Ch)
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NXP Semiconductors 4
3 Pin connections
IREF_REDUNT
VCCA_SUP
WS12_SUP
VPRE_SUP
WS34_SUP
VCC5_EXT
VCCA_SW
WS1_HS
WS2_HS
WS4_HS
WS3_HS
VPRE_G
GND_D1
GND_D1
VPRE_D
VPRE_S
VCC3P3
VINT_D
VPWR1
VINT_A
GND_A
GND_A
VCCA
VCC5
IREF
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
HD_S 1 75 VPWR2
CP 2 74 NC
HD_D 3 73 ADIN3
HD_G 4 72 ADIN2
PD_S 5 71 ADIN1
VBOOT 6 70 ISO_VSO2
PD_D 7 69 WLD2
FRW_G 8 68 WLD1
PD_G 9 67 VSO
GND_P 10 66 GND_P
LSD1 11 65 LSD12
HSD1 12 64 HSD2
LSD2 13 63 LSD11
HSD1 14 62 HSD2
LSD3 15 61 LSD10
HSD1 16 60 HSD2
LSD4 17 59 LSD9
HSD1 18 58 HSD2
LSD5 19 57 LSD8
NC 20 56 NC
LSD6 21 55 LSD7
GND_P 22 54 GND_P
RXK 23 53 NC
RSTB 24 52 IGN
BIST 25 51 NC
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
WSO1
WSO2
WSO3
WSO4
CAN1_l
RXD1
RXD2
GND_D2
CAN2_L
TXD1
TXD2
SO
WSAI
DOSV
DEBUG
SI
CAN2_H
VCC2_CAN
VPRE_CAN
VCC1_CAN
CAN1_H
VSO_IN
CSB
SCLK
TXK
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3.2 Pin definitions
1 HD_S A_Out Source feedback high-side FET for valve’s fail-safe switch
(2)
2 CP A_Out Tank capacitor for internal charge pump
3 HD_D A_Out Drain feedback high-side FET for valve’s fail-safe switch
4 HD_G A_Out Gate control high-side FET for valve’s fail-safe switch
8 FRW_G A_Out Gate control low-side FET for active recirculation pump motor
12, 14, 16, 18 HSD1 A_In High-side FET for left valves (3)
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NXP Semiconductors 6
Table 2. 900719 pin definitions (continued)
Pin number Pin name Pin function Definition Note
58, 60, 62, 64 HSD2 A_In High-side FET for right valves (3)
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Table 2. 900719 pin definitions (continued)
Pin number Pin name Pin function Definition Note
(6)
EP GND_P GND Power ground
Notes:
2. 220 nF X7R capacitor is used
3. 22 nF X7R capacitor is used per HSDx terminal (total max. 100 nF)
4. External pull-up resistor is connected to DOSV (> 3.3 kΩ for 3.3 V and > 4.7 kΩ for 5.0 V).
5. To be connected through a reverse diode
6. The exposed pad (EP) is connected to the die substrate.
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NXP Semiconductors 8
4 General product characteristics
Supply
Internal function
VINT_A VINT_VA –0.3 3.0 V
Charge pump
–0.3 or
CP CP VPWR – VPWR + 15 V
0.3 V
55 V or (7)
PD_G PD_G –20 V
VBOOT
Reset/debug/IRQ/ignition
Notes:
7. 55 V in sleep mode, VCP in operation.
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Table 3. Maximum ratings (continued)
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage
to the device.
Symbol Description (rating) Min. Max. Unit Notes
K-line / VSO
SPI
SI SI –0.3 7.0 V
CAN interface
VPRE_CAN VPRE_CAN –0.3 40 V
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NXP Semiconductors 10
Table 3. Maximum ratings (continued)
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage
to the device.
Symbol Description (rating) Min. Max. Unit Notes
Current
LSDx LSDx current –5.0 (8) 5.0 (9) A
Energy capability
(10)
LSD1, 6, 7, 12 LSD1,6,7,12 energy capability in clamping mode – 40 mJ
ESD protection
ESD gun
Gun test (330 Ω/150 pF) on CANx_L, CANx_H, VCC5_EXT, WSx_HS, LSDx, (12)
VESD_GUN1 –8.0 8.0 kV
HSDx, IGN, WLDx, VBAT1/2
Unpowered ESD gun test (330 Ω/150 pF) on CANx_L, CANx_H, VCC5_EXT, (12)
VESD_GUN2 –15.0 15.0 kV
WSx_HS, LSDx, HSDx, IGN, WLDx, VBAT1/2
(12)
VESD_GUN3 Unpowered ESD gun test (2.0 kΩ/150 pF) on CANx_L CANx_H –8.0 8.0 kV
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Table 3. Maximum ratings (continued)
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage
to the device.
Symbol Description (rating) Min. Max. Unit Notes
Unpowered ESD gun test (2.0 kΩ/150 pF) on VCC5_EXT, WSx_HS, LSDx, (12)
VESD_GUN4 –8.0 8.0 kV
HSDx, IGN, WLDx, VBAT1/2
VESD_GUN5 Powered ESD gun test (2.0 kΩ/330 pF) on CANx_L CANx_H –8.0 8.0 kV (12)
Powered ESD gun test (2.0 kΩ/330 pF) on VCC5_EXT, WSx_HS, LSDx, HSDx, (12)
VESD_GUN6 –8.0 8.0 kV
IGN, WLDx, VBAT1/2
(12)
VESD_GUN7 Unpowered ESD gun test (330 Ω/330 pF) on CANx_L CANx_H –8.0 8.0 kV
Powered ESD gun test (330 Ω/330 pF) on CANx_L CANx_H, VCC5_EXT, (12)
VESD_GUN8 –8.0 8.0 kV
WSx_HS, HSDx, IGN, WLDx, VBAT1/2
Notes:
8. Transient current (≤ 5.0 ms)
9. Continuous current in on-state
10. With 20 mH inductive load at TJ = 125 °C in initial (LSD2, 3, 4, 5, 8, 9, 10, 11 have high-side FET freewheeling)
11. The disturbances are referred to GNDx for global pins
12. Based on IEC 61000-4-2 test setup and Figure 48 typical application schematic
Thermal ratings
Operating temperature
(13)
TJ • Continuous –40 150 °C
(14)
• Transient –40 195
RΘJC (15)
Thermal resistance, junction to case (package exposed pad) – 2.0 °C/W
(16)
TPPRT Peak package reflow temperature during reflow – 260 °C
MSL Moisture sensitivity level – 3
Notes:
13. The total device lifetime at a junction temperature of 150 °C is guaranteed for 1000 hours.
14. Limited time 100 hours with 175 °C in the center of die and 195 °C in the center of valves drivers.
15. Junction-to-case at the bottom of the package is based on simulation without any interface resistance.
16. Lead soldering temperature limit is for 10 seconds maximum duration. Lead soldering can be done twice. Device must be delivered in dry pack.
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NXP Semiconductors 12
4.3 Operating conditions
This section describes the operating conditions of the device. Conditions apply to all the following data, unless otherwise noted.
SPI
Notes:
17. Reduced performance: the device is functional, but the parameter is not guaranteed
18. Refer to power-down configurable section
19. Absolute leakage current can be limited with an external pull-up resistor.
20. 20 μA total for WLD1 and WLD2
21. 10 μA total for WS12_SUP and WS34_SUP
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4.4 Digital I/Os characteristics
Digital inputs
Digital outputs
Notes:
22. No pull-down by default. The pull-down is enabled if ADINx bit = 0.
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5 General description
Regulators
Two warning
K-line VPRE, VCC5, VCC5_EXT,
lamp drivers
VCC3P3, VCCA. VCAN
Supervision
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5.3 Features
Table 8. Features
Module Features/ main parameters
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Table 8. Features (continued)
Module Features/ main parameters
• Accuracy +3.0 %
• Current capability = 200 mA
• Current limitation > 300 mA
VCC3P3
• Undervoltage, overvoltage detection
• Soft start
• Overtemperature shutdown with automatic restart
• Accuracy +2.0 %
• Current capability = 200 mA
• Current limitation > 300 mA
VCC5
• Undervoltage, overvoltage detection
• Soft start
• Overtemperature shutdown with automatic restart
• Accuracy ±3.0 %
• Current capability = 100 mA
• Current limitation > 150 mA
VCC5_EXT • Undervoltage, overvoltage detection
• Soft start
• Overtemperature shutdown with automatic restart
• Short-to-battery protection
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Table 8. Features (continued)
Module Features/ main parameters
• DC–DC converter
• Output voltage: 1.20 V, 1.25 V, 1.30 V, or 3.3 V (predefined at the factory)
• Accuracy +2.0 %
• Current capability = 800 mA
• Current limitation > 1.2 A
VCCA
• Switching frequency = 440 kHz
• Undervoltage, overvoltage detection
• Soft start
• Overtemperature shutdown
• Frequency modulation for EMC noise reduction
• 10-bit data
ADC • 7.0 μs time conversion time
• Three external input channels ( ADIN1, ADIN2, and ADIN3)
• 32-bit communication
• 16-bit data transfer and 8-bit CRC
SPI 32-bit interface
• Watchdog ( challenger/ timeout sequence)
• Maximum frequency = 10 MHz
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NXP Semiconductors 18
5.4 Modes of operation
The operating modes are:
• Sleep mode: All functions are disabled except for the CAN and IGN wake-up circuitries.
• Nominal mode: All functions are fully operational. If a fault is detected due to supervision features, the 900719 transits to safe mode.
• Safe mode: Some functions are turned off, e.g. safe HS MOSFET off.
Sleep mode
IGN WU
or
CAN WU (Option) IGN < VING-OFF
&
Clear IGN_WU flag and CAN_WU flag
IGN < VING-OFF
&
Clear IGN_WU flag and CAN_WU flag
Error event
Nominal mode Safe mode
Error handling
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VPRE
VCC5/VCC5_EXT/VCCx_CAN
VCCA/VCC3P3
cc5
ss_
ss_v
3 .3
vcc
vcc
VINT_A/VINT_D
3.3
ss_ tRSTB_off
tRSTB
tTURN_OFF
RSTB
(output)
Wake-up
tTURN_ON Power-down event
event
Nominal
Power-up Operation Power-down
Wake-up
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NXP Semiconductors 20
5.4.2 Configuration power-down
If battery voltage slowly decreases, eventually the voltage regulators shut off and the 900719 enters sleep mode. Two intermediate zones
are configurable via the SPI PWRDNCFG[1:0] bits, as presented below:
VPWR
VPWR_LV
VPWR_UV_FALL
VPWR_SLEEP
Time
1 2
Default Nominal Safe
Nominal Sleep
Selectable Safe Nominal
VPWRx Low-voltage
VPWR_LV Low-voltage detection threshold (falling edge) 6.75 7.0 7.25 V
VPWR1 undervoltage
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Table 11. Low-voltage, undervoltage electrical characteristics (continued)
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 20 V, - 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
VPWRx sleep
Timing
tVPWR Undervoltage and low-voltage detection filter time 232 293 360 μs
5.4.3 Supervision
The 900719 includes global supervision features:
• Battery low-voltage and undervoltage detections (See Battery low-voltage and undervoltage detections)
• Battery overvoltage detection
• Die temperature warning
• Ground disconnect detection
VPWRx overvoltage
Overtemperature/temperature warning
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NXP Semiconductors 22
5.4.3.3 Ground disconnect detection
The 900719 monitors the voltage between the GND_P and GND_D2 pin to detect ground disconnection. The FGND bit is set when the
GND_D2 ground pin versus the GND_P pin is higher than V_GL. If the ground shift is greater or totally disconnected, the MCU detects it
due to the SPI watchdog error.
Overtemperature/temperature warning
tGL Ground loss detection detection filter time 232 293 360 μs
Reset input
Reset output
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5.4.3.5 Safe mode truth table
For safety reason, the specified events put the 900719 in safe mode as shown in the following table:
Normal mode
Low during
at leaset
Reset forced by MCU OFF Reset (28) OFF OFF OFF OFF Recessive OFF Normal
t_RST_MIN
(input)
Clock failure (25) High OFF Reset(23) OFF OFF OFF OFF Recessive OFF No effect
(25) (23)
Charge pump failure High OFF Reset OFF OFF OFF OFF Recessive OFF No effect
(23)
LBIST running or failure High OFF Reset OFF OFF OFF OFF Recessive OFF No effect
VPWRx overvoltage (25) High No effect Reset (23) OFF OFF ON (24) No effect No effect No effect No effect
Low during
Watchdog fault or ALU fault (25) No effect Reset (23) OFF OFF OFF OFF No effect No effect No effect
tRSTB_REC
Only VCC5_EXT
OFF. Automatic
VCC5_EXT undervoltage or (23)
High No effect Reset OFF OFF OFF OFF No effect No effect restart after
VCC5_EXT overtemperature (25) 10 ms in case of
OT
OFF with
VPRE or VCC3P3 or VCC5 or
Low OFF Reset (23) OFF OFF OFF OFF Recessive OFF automatic restart
VCCA overtemperature after 10 ms
VINT_x undervoltage Low OFF Reset (23) OFF OFF OFF OFF Recessive OFF OFF
Sleep mode
VPWR1 sleep voltage Low OFF Reset OFF OFF OFF OFF Recessive OFF OFF
Notes:
23. SPI registers forced to initial state except the flag events register which reports all cited faults and all the ‘no effect’ functions.
24. PD forced in on-state (during tLD_ACT) by the load dump feature (PD_D or HD_D voltage > PD_ov).
25. Fault detection can be disabled through SPI. In case of disable, no effect on the functions and the RSTB pin (i.e. RSTB stays High).
26. VPRE, VCCA, VCC5, VCC5_EXT, VCC3P3, VCC1_CAN, and VCC2_CAN voltage regulators.
27. WLDx low-side driver OFF means the warning lamps are ON.
28. SPI registers forced to initial state except for the EXT_RST bit.
29. Turn-off after tLSDx_HD_G.
30. Refer to each operation for normal operation.
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NXP Semiconductors 24
5.4.3.6 Configurable supervision features
The following supervision features can be managed by the corresponding SPI bit setting as described in Table 17:
0 (default) Charge pump undervoltage causes SAFE mode and SPI Flag
CPFAILDIS CP_FAIL
1 Fault causes SPI flag only
0 (default) CCA undervoltage causes safe mode, and SPI Flag is set
VCCAUVDIS VCCA_UV
1 Fault causes SPI flag only
0 (default) VPWRx overvoltage causes safe mode and SPI flag is set
VPWRxOVDIS VPWR1_OV
1 Fault causes SPI flag only
Current source enabled on VSO output when VSO is off. If open load is detected,
0 (default)
VSO_OP_DIS the SPI flag is set VSO_OP
1 Current source disabled; SPI flag disabled
Current source enabled on VSO2 output when VSO2 is off. If open load is
0 (default)
VSO2_OP_DIS detected, the SPI flag is set VSO2_OP
1 Current source disabled; SPI flag disabled
Current source enabled on WLDx output when WLDx is off. If open load is
0 (default)
WLDx_OP_DIS detected, the SPI flag is set WLDx_OP
1 Current source disabled; SPI Flag disabled
WSSx low-level sensor current is tracked. If ILOW > ILEAK_FLT SPI flag is set (SPI
0 (default) WxT1_LKG, WxT2_LKG,
WSx_TRK_DIS Flag only)
WxT3_LKG
1 Low-level sensor current tracking disabled; SPI flag disabled
Safety feature is tested during ABIST, if failure occurs, the *FAIL and *_SA bits
0 (default)
*_ADIS (31) will be set accordingly *FAIL, *_SA
1 Test is skipped, *FAIL and *_SA bits are cleared next time ABIST runs
0 (default) If PD_D or HD_D > PD_ov, turn on PMD and set PMD_LD flag
PMD_LDA_DIS PMD_LD
1 Fault causes SPI flag Only
0 (default) 14 MHz main/alt clock failure causes safe mode and SPI flag is set
CLKFAILDIS (32) CLK_FAIL
1 Fault causes SPI flag Only
Notes:
31. There are 16 bits in the SPI register map, one for each ABIST test.
32. If CLKMONDIS is set, the CLK_FAIL SPI bit disables, and therefore CLKFAILDIS bit is meaningless.
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25 NXP Semiconductors
5.4.4 Error handling
Table 18. Error handling
Type of error Detection condition Action SPI operation Restart condition (33)
VPRE_SUP disconnection Nominal mode SPI flag only (VPRE_SUP_DISC flag) Write 1
overvoltage All except sleep mode SPI flag only (VPRE_OV flag) Write 1
undervoltage All except sleep mode SPI flag only (VPRE_UV flag) Write 1
overvoltage All except sleep mode SPI flag only (Vxxx_OV flag) Write 1
undervoltage (can be disabled SPI flag (Vxxx_UV flag) Go to Safe
All except sleep mode Write 1
individualy) mode. See Table 16
overvoltage All except sleep mode SPI flag only (VCC5EXT_OV flag) Write 1
Shutdown VCC5EXT only. SPI flag
undervoltage (can be disabled (VCC5EXT_UV flag). Go to safe mode.
All except sleep mode Write 1 Clear VCC5EXT_UV flag
individualy)
See Table 16
PD_D disconnection All except sleep mode SPI flag only (PMD_PD _DISC flag) Write 1
Shutdown PD_G and SPI fault flag Turn-on again through the
overcurrent ON Write 1
(PMD_OC flag) SPI
Shutdown PD_G & FRW_G and SPI Turn-on again through the
overtemperature All except sleep mode Write 1
fault flag (PMD_OT) SPI
HD_D disconnection All except sleep mode SPI flag only (HSD_DISC flag) Write 1
HSD_EN rise-edge Ignore HSD_EN rise-edge command. Turn-on again through the
Load leakage Write 1
SPI bit SPI fault flag. (HSD_LEAK) SPI
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NXP Semiconductors 26
Table 18. Error handling (continued)
Type of error Detection condition Action SPI operation Restart condition (33)
RETRY_DIS = 0: Automatic
Shutdown the corresponding WSx_HS retry every 16 ms
Reverse current ON Write 1
and SPI fault flag (WSx_REVCUR) RETRY_DIS = 1: Turn-on
again through the SPI
RETRY_DIS = 0: Automatic
Shutdown the corresponding WSx_HS retry every 16 ms
overcurrent ON Write 1
and SPI fault flag (WSx_OC) RETRY_DIS = 1: Turn-on
again through the SPI
RETRY_DIS = 0: Automatic
Shutdown the corresponding WSx_HS retry every 16 ms
overtemperature All except sleep mode Write 1
and SPI fault flag (WSx_OT) RETRY_DIS = 1: Turn-on
again through the SPI
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Table 18. Error handling (continued)
Type of error Detection condition Action SPI operation Restart condition (33)
Drain-to-source monitoring All except sleep mode SPI flag only (VSO2_VDS) Read diagnosis
CAN interfaces
Supervision
SPI watchdog fault RSTB is high state See Table 16. SPI flag (WDFLT) Write 1 (34)
VPWRx overvoltage
RSTB is high state See Table 16. SPI flag (VPWRx_OV) Write 1 Then operate normaly
(can be disabled)
PD_G turn on during tLDact; off with
Load dump (can be disabled) RSTB is high state normal condition with a certain filter Write 1
time. SPI flag (PMD_LD)
CP failure (can be disabled) All except sleep mode See Table 16. SPI flag (CP_FAIL) Write 1
Clock failure (can be disabled) RSTB is high state See Table 16. SPI flag (CLK_FAIL) Write 1
Die temperature warning RSTB is high state SPI flag only (DIE_TEMP_WARN) Write 1
SPI failure RSTB is high state See Table 16. SPI flag (FMSG) Write 1
GND_D supervision RSTB is high state SPI flag only (FGND) Write 1
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NXP Semiconductors 28
Table 18. Error handling (continued)
Type of error Detection condition Action SPI operation Restart condition (33)
Supervision (Continued)
IREF failure RSTB is high state SPI flag only (IREF_FAIL) Write 1
Successfully re-
running the
A-BIST failure RSTB is high state SPI flag only (ABIST_FAIL)
corresponding
BIST test
Successfully re-
running the
L-BIST failure RSTB is high state See Table 16. SPI flag (LBIST_FAIL)
corresponding
BIST test
Notes:
33. Fault condition disappears.
34. After 900719 reset.
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6 Functional block description
6.1.1 Introduction
IREF reference current is used for valves’ low-side switches and IREF_REDUNT for valves’ high-side switches. In case of a false resistor
value at IREF (error > IREF_error_pos or error < IREF_error_neg), the IREF_FAIL flag is set. It is required to connect IREF and
IREF_REDUNT resistors to GND_A pin.
6.2 Oscillator
6.2.1 Introduction
900719 contains a 14 MHz clock, which generates all the system clock and multiple filter times. The clock error is detected by the clock
monitoring feature.
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NXP Semiconductors 30
frequency
t_mod
fOSC + fmodx
fOSC + fmodx/4
time
fOSC
fOSC - fmodx
Oscillator
6.3.1 Introduction
The charge pump generates a voltage of a typical 12 V above the supply VPWR1. The charge pump voltage is intended for internal use
only. No additional load is connected to the CP pin. The charge pump requires an external 20 V X7R capacitor for energy storage and to
cover transients. The voltage difference between CP and VPWR can be read by the SPI (ADC data). Moreover, the CP_FAIL SPI flag
error is reported, in case (VCP – VPWR1) < cp_uv. The CP_FAIL detection is disabled due to the CPFAILDIS SPI bit.The charge pump
frequency is modulated due to the FM_CP_EN and FM_CP_AMP SPI bits.
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31 NXP Semiconductors
6.3.2 Charge pump electrical characteristics
Table 21. Charge pump electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (37)
Symbol Characteristic Min. Typ. Max. Unit Notes
VPWR1
V_CP Charge pump voltage, referred to ground VPWR1+12 VPWR1+15 V
+VCP_UV
VCP_UV Carge pump undervoltage threshold 4.5 5.0 5.5 V
Notes:
35. FM_CP_EN = 1 & FM_CP_AMP bit = 0
36. FM_CP_EN = 1 & FM_CP_AMP bit = 1
37. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.4.1 Introduction
VPRE is a linear regulator with an external ballast N-channel FET providing a typical 6.3 V. This regulator supplies five linear voltage
regulators integrated in the 900719, as shown in Figure 9.
VPWR1
External
Pre-linear VPRE connection
Regulator with external
N-channel FET
6.3 V typical VPRE_S VPRE_CAN
Linear 5.0 V Linear 5.0 V Linear 3.3 V Linear 5.0 V Linear 5.0 V
Regulator Regulator Regulator Regulator Regulator
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NXP Semiconductors 32
VBAT1
VPRE disconnect
detection VPRE_SUP
VPRE_S
soft start
Overtemperature 220n
detection
Under and
Overvoltage
Capable to sustain
detection 40 V short-circuit
GND_A
Overtemperature detection
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33 NXP Semiconductors
Table 22. VPRE electrical characteristics (continued)
Characteristics noted under conditions 6.0 V ≤ VPWRx ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
VPREF_SUP_DIS VPRE_SUP disconnect detection threshold (falling edge) 1.6 2.25 3.2 V
VPRER_SUP_DIS VPRE_SUP disconnect detection threshold (rising edge) 1.7 2.4 3.3 V
VPRE_SUP_DIS_
VPRE_SUP disconnect detection threshold hysteresis 35 160 350 mV
HYS
6.5.1 Introduction
VCCA is a DC/DC buck converter providing a selectable typical voltage from 1.2 V to 3.3 V.
VCCA_SUP
DC/DC Buck
Converter
Voltage value depends
on the part number
VCCA
Figure 11. Simplified block diagram of VCCA power supply
SC900719BAF/R2 1.20 V 01
SC900719CAF/R2 1.30 V 10
SC900719DAF/R2 3.3 V 11
The VCCA regulator integrates the high-side switching FET, supplied by the VPWR pin, which drives the external inductor. The DC/DC
buck converter is a current mode buck (step-down), PWM switching regulator that contains a high current capability up to 800 mA, and
all control, logic, and protection functions. A configurable frequency modulation allows switching noises when this feature is activated
through the SPI (FM_VCCA_EN, FM_VCCA_MP[1:0], and FM_VCCA_MB[3:0] SPI bits).
It is possible to disable the undervoltage fault protection by the VCCAUVDIS SPI bit. A current limitation cycle-by-cycle is implemented to
avoid uncontrolled power dissipation (duty cycle control), and limits the current below the current limitation. This voltage regulator also
has a thermal shutdown protection implemented in the internal high-side FET. VCCA voltage can be identified by the VCCA_VSEL[1:0]
bits. See Table 23.
900719
NXP Semiconductors 34
6.5.2 VCCA electrical characteristics
Table 24. VCCA electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (40)
Symbol Characteristic Min. Typ. Max. Unit Notes
Undervoltage
• B part 1.12 1.145 1.17
VUV_VCCA • A part 1.17 1.195 1.22 V
• C part 1.22 1.245 1.27
• D part 3.1 3.168 3.236
Overvoltage
• B part 1.22 1.245 1.27
VOV_VCCA • A part 1.27 1.295 1.32 V
• C part 1.32 1.345 1.37
• D part 3.364 3.432 3.5
Overtemperature detection
Frequency modulation
00 = no modulation (default)
FM_VCCA_MB 01 = ±3.15 % / 1 step (38)
2 SPI bits for frequency modulation band
[1:0] 10 = ±6.3 % / 2 step
11 = ±12.6 % / 3 step
00 = 8
01 = 16 (38)
FM_VCCA_MP 2 SPI bits for frequency modulation period
10 = 32 (default)
11 = 64
Soft start
VSS_VCCA 2.0 – 30 mV/μs
• 6.0 V ≤ VPWR ≤ 20 V
900719
35 NXP Semiconductors
Table 24. VCCA electrical characteristics (continued)
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (40)
Symbol Characteristic Min. Typ. Max. Unit Notes
Notes:
38. Frequency modulation active if FM_VCCA_EN bit = 1
39. Transient rejection errors are related to the momentary output voltage level at the time when the transient was applied. Less transient rejection
performance is achieved if COUT is reduced.
40. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.6.1 Introduction
VCC3P3 is a linear regulator providing a typical 3.3 V. This regulator is supplied by the VPRE pin and an external capacitor for filtering
and stability. It is possible to disable the undervoltage fault protection by the SPI command (VCC3P3UVDIS bit).
Overtemperature detection
900719
NXP Semiconductors 36
Table 25. VCC3P3 electrical characteristics (continued)
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (41)
Symbol Characteristic Min. Typ. Max. Unit Notes
Soft start
VSS_VCC3.3 5.0 – 30 mV/μs
• 6.0 V ≤ VPWR ≤ 20 V
Transient rejection
Notes:
41. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.7.1 Introduction
VCC5 is a linear regulator providing a typical 5.0 V. This regulator is supplied by VPRE and an external capacitor for filtering and stability.
It is possible to disable the undervoltage fault protection by the SPI command (VCC5UVDIS bit).
Voltage accuracy
VVCC5 • 6.0 V ≤ VPWR ≤ 20 V 4.9 5.0 5.1 V
• 5.3 V ≤ VPWR < 6.0 V (I_VCC5 < 100 mA) 4.85 5.0 5.1
900719
37 NXP Semiconductors
Table 26. VCC5 electrical characteristics (continued)
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (42)
Symbol Characteristic Min. Typ. Max. Unit Notes
Overtemperature detection
Soft start
VSS_VCC5 5.0 – 30 mV/μs
• 6.0 V ≤ VPWR ≤ 20 V
Transient rejection
Notes:
42. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.8.1 Introduction
VCC5_EXT is a linear regulator providing a typical 5.0 V. This regulator is supplied by VPRE and an external capacitor for filtering and
stability. It is possible to disable the undervoltage fault protection by the SPI command (VCC5_EXTUVDIS bit). Undervoltage is ignored
for the defined masking time (tUV_VCC5_EXT_M) when VCC5 is enabled. If the undervoltage is detected, only VCC5_EXT is shutdown. The
regulator turns on again when the VCC5EXT_UV flag is cleared. The VCC5_EXT pin sustains a 40 V short-circuit without reverse current.
If VCC5_EXT is higher than VPRE, the regulator is shutdown and avoids the reverse current flowing into VPRE. It will be possible to disable
VCC5_EXT output by SPI command (VCC5EXTDIS bit).
VREL_VCC5_EXT (44)
Relative error versus VCC5 –2.0 – 2.0 %
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NXP Semiconductors 38
Table 27. VCC5_EXT electrical characteristics (continued)
Characteristics noted under conditions 6.0 V ≤ VPWRx ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
tUV_VCC5_EXT_M Undervoltage detection mask time after startup 100 128 154 ms
Overtemperature detection
Transient rejection
Notes:
43. No pull-down resistor inside the 900719
44. (VCC5_EXT – VCC5) / VCC5 * 100
6.9.1 Introduction
VCCx_CAN is a dual linear regulators providing a typical 5.0 V for each CAN physical layer. This regulator is supplied by VPRE_CAN
(connected to VPRE externally). VCCx_CAN voltage regulators can be also used in standalone without the CAN transceiver operation.
The undervoltage and overvoltage fault protection is active when the corresponding CAN transceiver is disabled by the SPI command
(CANxTxRxDIS bit = 1).
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39 NXP Semiconductors
Table 28. VCCx_CAN electrical characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (45)
Symbol Characteristic Min. Typ. Max. Unit Notes
Overtemperature detection
TOT_HYS_VCC_
Overtemperature hysteresis – 15 – °C
CAN
Transient rejection
LDRVCC_CAN Load regulation from 0 to Max. (IVCC3.3) 6.0 V ≤ VPWR ≤ 7.0 V – – 2.0 %
Notes:
45. The parameter is guaranteed in extended VPWR voltage range from 5.5 V to 6.0 V. VPRE_S has to be more than 5.4 V when VPWR is 5.5 V.
6.10.1 introduction
VINT_A and VINT_D are linear regulators for internal power supply. An external capacitor is needed for filtering and stability. If an
undervoltage fault is detected, the 900719 is forced to sleep mode. VINT_A and VINT_D are not used as an external power supply.
Undervoltage
VINT_UV Undervoltage reset threshold 2.0 2.175 2.35 V
900719
NXP Semiconductors 40
Table 29. VINT_A and VINT_D electrical characteristics (continued)
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (46)
Symbol Characteristic Min. Typ. Max. Unit Notes
Notes:
46. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.11.1 Introduction
The DOSV pin is dedicated to supply the 900719’s digital output buffers (SO, WSOx, WSAI, RXDx, and RXK), either at 5.0 V or 3.3 V, by
externally connecting the VCC5 or VCC3P3 pins, as in Figure 12.
DOSV
100 k
Logic Digital Outputs
GND_D2
DOSV
900719
41 NXP Semiconductors
6.12 Dual CAN interfaces (CAN1 and CAN2)
6.12.1 Introduction
The circuit includes two high-speed CAN interfaces up to 1.0 Mbps communication baud rate. An additional transient dynamic
characteristic is specified in order to adapt a higher communication rate up to 2.0 Mbps. Once ISO11898-2 is released, these parameters
might be updated according to the requirement. A wake-up circuit is implemented only on CAN1. Figure 13 illustrates a high level diagram
of the CAN interface:
VCCx_CAN
TXDx
R_in
CANx_H
Buffer CANx_L
R_in
DOSV Differential
receiver
RXDx
CAN1_H
Wake-up
Wake-up receiver
CAN1_L
CAN1 only
GND_A
900719
NXP Semiconductors 42
6.12.3 CAN wake-up (CAN1 Only)
A wake-up circuitry is implemented to detect CAN traffic in CAN low-power mode. This mechanism is disabled while the device is in normal
mode. The device wake-up detection is based on pattern detection. The pattern consists in the detection of three consecutive events. The
three events are a dominant level, followed by a recessive level, then a second dominant level. Each dominant or recessive level is filtered
and should be longer than tWUFL1 or tWUFL2. The three events occurs within a maximum time window, parameter tWUTO, otherwise the
wake is ignored. When the pattern is detected, the wake-up event is latched.
Recessive level
Dominant level Dominant level Dominant level
CAN
Bus
3rd event
1st event 2nd event
T_tog
Recessive level
Dominant level Dominant level
CAN
Bus
RxD
T_wuto
T_wuto expire
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43 NXP Semiconductors
6.12.7 Inductive short-circuit
The device sustains inductive short-circuits on CANx_H (to ground) and CANx_L (to battery). The inductance is composed of the wire
harness (length 20 meters, to develop additional inductance of 20 μH). The short-circuit could be applied to a fixed DC voltage of 40 V
and –27 V. During the short-circuit test, the device is in CAN normal mode, with a square signal applied on TXDx. The failure criteria is
‘no damage’ to the device.
CAN wake-up
IH_LEAK_UNPWR,
CANx_H CANx_L leakage in unpowered mode – – 10 μA
IL_LEAK_UNPWR
IH_LEAK, IL_LEAK CANx_H, CANx_L leakage current in recessive mode –1.0 – 4.0 mA
tDTX-BUS(R-D),
Delay Time from TXD to Bus DOM/REC 37.5 75 150 ns
tDTX-BUS(D-R)
tDBUS-RX(R-D),
Delay time from bus DOM/REC to RXD 37.5 75 150 ns
tDBUS-RX(D-R)
tBIT_RX Received recessive bit width at tBIT (TXD) = 500 ns 400 – 550 ns (47)
(48)
tREC Receiver timing symmetry at tBIT (TXD) = 500 ns –65 – 40 ns
CANx_H, CANx_L
VDIFF COM MODE Differential input comparator common mode range –12 – 12 V
900719
NXP Semiconductors 44
Table 31. CAN electrical characteristics (continued)
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 20 V, – 40°C ≤ TJ ≤ 150°C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
V(H-L) DOM CAN differential voltage in dominant state 1.5 2.0 3.0 V
Notes:
47. RLOAD = 60 Ω, CLOAD (between CANx_H and CANx_L) = 100 pF. C at RXDx = 15 pF
48. tREC = tBIT_RX – tBIT_BUS
6.13.1 Introduction
The pump motor is controlled up to 16 kHz through the SPI:
• activation: PMD_EN bit. When PMD_EN is 0, both high-side and low-side gate drivers are off.
• PWM frequency: F_PMD[4:0] bits
• PWM duty cycle: PMD_DC[7:0] bits
The high-side FET pre-driver is composed of bootstrap circuitry, as well as a small charge pump structure, to operate 100 % duty. The
PWM duty cycle error between the SPI configuration and the output is below 1.0 % from 10 % to 90 %, from 8.0 V to 20 V, as illustrated
in Figure 16.
900719
45 NXP Semiconductors
Output Duty Cycle
Input
10 % 90 % Duty Cycle
Figure 16. Pump motor drive PWM duty cycle range
Below 10 % and above 90 %, the MCU compensates to address the expected PWM output duty cycle. The bootstrap capacitor is charged
(tBOOT_DELAY) before the high-side FET pre-driver operation. This time is included in tRSTB time. The typical high-side FET is
IPB80N04S2-04 (max 4.0 mΩ on-state resistance at 25 °C with 40 V capability) or IPB100N04S2-04 (max 2.0 mΩ on-state resistance
with 40 V capability). The freewheeling current path can be done through a diode or an external N-channel low-side FET. By default, the
freewheeling current path is done by a diode. The SPI PMD_ACT bit is set to control the external low-side FET in opposite to the high-
side FET. The typical low-side FET is IPD30N06S4L-23 (max 13 mΩ on-state resistance at 25 °C with 55 V capability). Some embedded
protection avoids vertical current conduction in half-bridge topology.
An additional N-channel low-side FET can be also used in series to cutoff the current in reverse battery.
Load dump
Charge
protection
pump
Supply disconnect VBAT2
detection
PD_D
Current Limitation PD_S
between high-side and low-side
50
Logic avoiding cross-talk
50
Gate driver PD_G 470k
VBOOT 50
Bootstrap
FRW_G 220n
Over-temperature
M
470k
detection
GND_P
900719
NXP Semiconductors 46
6.13.3 Overcurrent protection
The pump pre-driver protects the external N-channel power FET on PD_G in overcurrent conditions. The drain-to-source voltage of the
FET on PD_G is checked continuously when the pump driver is switched on. If the measured drain-to-source voltage exceeds the
selectable overcurrent voltage threshold (PMD_OC_SEL[2:0]), the output of the overcurrent comparator reports a fault. If the output of the
comparator is active longer than the defined filter time (tPD_OC), the output PD_G is switched off and the PMD_OC OP SPI bit is set to
logic [1]. Overcurrent detection circuitry has a selectable masking time (mtPD_OC) after the 1st edge of turn-on, reporting the fault and
avoiding a transient time malfunction.
PumpControl
Pump control ON OFF
tim e
PWM Signal
PWM signal Duty-cyle = FF’hex Duty-cyle = 7F’hex
ti me
mtPD_oc
Overcurrent
Over-current
protection
Protection Disabled Enabled
time
PD_ov
HD_D
tPD_OV tPD_OV
PD_G tLD_ACT
900719
47 NXP Semiconductors
Table 32. Pump motor driver operation
Operation mode PMD_OT PMD_OC PMD_LD pmd_act PMD_EN PD_G FRW_G Restart conditions
0 0 0 X 0 OFF OFF
PD_G
PD_S
ILEAK_PD_S Leakage current in sleep mode – – 1.0 mA
PD_D
ILEAK_PD_D Leakage current in sleep mode – – 10 μA
900719
NXP Semiconductors 48
Table 33. Pump motor pre-driver electrical characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
Overcurrent shutdown
Programmable overcurrent detection
PMD_OC_SEL[2:0] bits
• 000 –15 % 0.69 +15 %
• 001 (default) –15 % 0.79 +15 %
• 010 –15 % 0.89 +15 %
VPD_OC V
• 011 –15 % 0.99 +15 %
• 100 –15 % 1.08 +15 %
• 101 –15 % 1.18 +15 %
• 110 –15 % 1.28 +15 %
• 111 –15 % 1.38 +15 %
Overtemperature shutdown
900719
49 NXP Semiconductors
Table 33. Pump motor pre-driver electrical characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
VBOOT charge
900719
NXP Semiconductors 50
Table 33. Pump motor pre-driver electrical characteristics (continued)
Characteristics noted under conditions 8.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
Frequency modulation
0000 = no modulation (default)
0001 = ±0.5 %/1 step
FM_PMD_ (50)
Four SPI bits for frequency modulation band 0010 = ±1.0 %/2 step
MB[3:0]
…
1111 = ±7.5 %/15 step
00 = 8 cycle
FM_PMD_ 01 = 16 cycle (50)
Two SPI bits for frequency modulation period
MP[1:0] 10 = 32 cycle (default)
11 = 64 cycle
Notes:
49. Typical 2.0 mA and maximum 4.0 mA for PD_G=40 V
50. If the PMD’s PWM is controlled by SPI (FM_PMD_EN=1), the frequency modulation is active on the first PWM cycle.
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51 NXP Semiconductors
6.14 High-side pre-driver for valve’s safe switch
6.14.1 Introduction
The high-side pre-driver is intended to control the safe switch for the overall solenoid path. The HD_G pin is controlled by the SPI
command (HSD_EN bit). An external diode or a FET is needed, as presented in Figure 20 for reverse protection.
VBAT1
Over-current 470k
Charge protection
pump
Supply disconnect
detection
HD_D
Over-temperature
100
Logic detection
Gate driver with HD_G 100
soft start
470k
HD_S
Load Leakage
100
GND_A
Figure 20. Safe high-side for valves with reverse battery protection
The HD_G pin is pulled down in sleep mode through a dedicated external passive circuitry (470 kΩ resistor and diode). In cases of safe
switch overcurrent, overtemperature fault detection, or an HSDx overvoltage detection, the FET is switched off automatically. A rewrite
operation (x_EN bit) is required to re-enable the drivers.
900719
NXP Semiconductors 52
6.14.5 HD_D disconnect detection
If a HD_D pin disconnection occurs for a dedicated filter time (tVHD_D_DIS_F), the HSD_DISC bit is set high.
HD_G
Turn-on time
tHD_ON – – 1.4 ms
• 6.0 V ≤ VPWR < 20 V
Turn-on current
IHD_ON 300 600 800 μA
• 6.0 V ≤ VPWR < 20 V
Delay time of HD_G shutdown after LSD shutdown due to supply fault
tLSDX_HD_G or reset condition 1.0 1.5 2.0 ms
• 6.0 V ≤ VPWR < 20 V
HD_S
ILEAK_HD_S Leakage current – – 50 μA
HD_D
Overcurrent detection
900719
53 NXP Semiconductors
Table 34. High-side pre-driver electrical characteristic (continued)
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (52)
Symbol Characteristic Min. Typ. Max. Unit Notes
Overtemperature detection
tHD_LC_FIT Load leakage current detection filter time 232 293 360 μs
Notes:
51. VCC5 = DOSV = 0 V; HD_G = 2.0 V; HD_D = PD_D = VPWR = 14 V
52. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.15.1 Introduction
The 900719 is designed to drive digital or current regulated valves. All 12 channels are composed of low-side FETs with an open-drain
output, a pre-driver circuit, a diagnostic circuitry, and a current regulator, depending on the type of valves.
900719
NXP Semiconductors 54
Safe Switch
Drain-to-source
Monitoring
Gate Control
SPI
Overtemperature
shutdown
(x4ch)
GND_P
Figure 21. Low-side switches for digital valves
Safe Switch
2
Safe Overvoltage HSDx
switch detection
control
Gate Control
Drain-to-source
Monitoring
Overcurrent
8 LSDx
shutdown
Gate Control
SPI
Overtemperature
shutdown
(x8ch)
GND_P
Figure 22. Low-side/high-side switches for current regulated valves
These high-side switches have a common drain, called HSD1 or HSD2 (one per side), as illustrated in Figure 23:
900719
55 NXP Semiconductors
Safe Switch
HSD1 HSD2
LSD2 LSD11
LSD3 LSD10
LSD4 LSD9
LSD5 LSD8
GND_P GND_P
Figure 23. Current regulated valves
Each HSDx pin connects internally to four pins. This freewheeling circuitry is active until the inductor current becomes zero. Each valve
driver is controlled by the SPI control registers when the corresponding x_EN bit is set to a logic [1]. The valves could switched with a
fixed PWM duty cycle when the x_FDC bit is set to 1 and controlled to regulate the current when the x_FDC bit is set to 0.
Clamped OFF (0
0–2 0–2 0–3 0–3 0–4 0–5 0–5 0–6 0–6 0–7 0–8 0–8 0–9 0–10
%)
Low Saturation 3–4 3–5 4–6 4–8 5–9 6–10 6–11 7–13 7–14 8–15 9–16 9–18 10–19 11–21
Clamped ON (100 1021– 1019– 1018– 1017– 1016– 1015– 1013– 1012– 1011– 1010– 1009– 1008– 1006– 1005–
%) 1023 1023 1023 1023 1023 1023 1023 1023 1023 1023 1023 1023 1023 1023
In PWM, the common output frequency of channels is controlled from 2.0 to 10 kHz, by LF_PWM[3:0] SPI bits. The sequence/interleaved
phase shift between the channels is implemented to minimize switching noise of the solenoid coil. The valves switching sequence is
predefined as follows: LSD1, LSD6, LSD7, LSD12, LSD3, LSD4, LSD9, LSD10, LSD2, LSD11, LSD5, and LSD8. The delay between each
valve’s activation is selectable with the TDEL_V_DIS bit (tDELAY_VALVES or zero). The LSD1 output is used as reference.
Period=1/LF_PWM
LSD1(reference) Duty Cyle
tDELAY_VALVES tDELAY_VALVES
LSD6 (delayed)
Figure 24. Switching delay between valves (tDEL_V_DIS = 0)
900719
NXP Semiconductors 56
During valve operation, the output duty cycle adjusts at the end of the PWM period, in case of a SPI setting change. The VLV_SYNC_SEL
is a read/write SPI bit controlling the valves switching.
• Set to logic [0]: the duty cycle/current change occurs on the next PWM period after the SPI write command to the duty cycle/current
register
• Set to logic [1]: the duty cycle/current changes are postponed until the next PWM cycle after writing ‘1’ to the individual enable bit of
the valve updating the PWM/current of (which is already ‘1’). If the user wants to change all of the duty cycle/currents at once, all 12
of the valve enable bits can be re-written to 1 at the same time, since they are in the same SPI register.
frequency
Frequency change after Fmp<1:0> periods
f0+0.5 %.f0
f0 = LF_PWM
The number of frequency
steps depends on
Fmb<3:0> bits
f0-1.0 %.f0
HSDx
SPI
Current Value
Setting
Current
LSDx - PI-controler
Measurement + Digital Processing
(digital convertion)
900719
57 NXP Semiconductors
Integrator feedback register I charac bits (x_KI[3:0] bits) define the regulation behavior per channel. The default value is 1/8. Integrator
feedback register P charac bits (x_KP[3:0] bits) define the regulation behavior per channel. The default value is 1. A high controller
feedback value accelerates the regulator feedback and provides a faster settling of the regulated current after disturbances like a battery
voltage surge. If the measured current does not reach the expected value (ICR_DELTA) after tCR_ERR, the x_CRER bit is set high. The
management of the PI-controller saturation is controllable with the ICLAMP SPI bit. The ICLAMP bit is a read/write SPI bit controlling the
PI filter integrator clamp level. It is necessary to clamp the integrator level for anti-windup on the current regulated valves.
• Bit = 0: integrator limit is 0x03FF
• Bit = 1: integrator limit is 0x07FF
6.15.7.2 HSDx active freewheeling diode open detection (for current regulated valves
only)
This function only operates during automatic valve diagnostic patterns. The open condition is reported in the SPI when the HSDx output
is below the VOPHSD (due to the pull-up current source, called ISOURCE_HSD) for the tOP_HSD filter time.
• HSD_OPEN_L bit corresponds to HSD1 pin disconnection
• HSD_OPEN_R bit corresponds to HSD2 pin disconnection
900719
NXP Semiconductors 58
6.15.7.7 Automatic valve diagnostic
Before valve operations, the MCU can request an automatic valve diagnostic through the SPI. The automatic valve diagnostic checks:
• HSDx open conditions
• LSDx Open load or shorted to ground
• LSDx shorted to battery
• Load leakage of safe switches
• Overcurrent of safe switches
This sequence duration is faster than 1.0 ms. The automatic valve diagnostic is controlled by the SPI, as shown in Table 36.
900719
59 NXP Semiconductors
6.15.8 HSD, LSD electrical characteristics
Table 38. HSD, LSD electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (56)
Symbol Characteristic Min. Typ. Max. Unit Notes
tDELAY_VALVES LSDx delay time between valve activation 6.1 7.7 9.3 μs
tDELAY_CR LSDx turn-on and turn-off delay time for current regulated valves – 2.0 5.0 μs
900719
NXP Semiconductors 60
Table 38. HSD, LSD electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (56)
Symbol Characteristic Min. Typ. Max. Unit Notes
Fault detection
Overcurrent shutdown
Overtemperature shutdown
900719
61 NXP Semiconductors
Table 38. HSD, LSD electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (56)
Symbol Characteristic Min. Typ. Max. Unit Notes
…
1111 = ±7.5 %/15 step
00 = 8 cycle
01 = 16 cycle (53)
FM_LSD_MP[1:0] Two SPI bits for frequency modulation period
10 = 32 cycle (default)
11 = 64 cycle
900719
NXP Semiconductors 62
Table 38. HSD, LSD electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (56)
Symbol Characteristic Min. Typ. Max. Unit Notes
Current regulation
Target current programming (10 bits)
x_I[9:0] bits
• 00 0000 0000 – 0 – mA
ICR
• 00 0000 0001 – 2.2 – mA
• … – – –
• 11 1111 1111 – 2.25 – A
P charac
• 0111 Factor of P-characteristic = 1.2188
• 0110 Factor of P-characteristic = 1.1875
• 0101 Factor of P-characteristic = 1.1562
• 0100 Factor of P-characteristic = 1.1250
• 0011 Factor of P-characteristic = 1.0938
• 0010 Factor of P-characteristic = 1.0625
• 0001 Factor of P-characteristic = 1.0312
P • 1000 Factor of P-characteristic = 1.0000
• 0000(default) Factor of P-characteristic = 1.0000
• 1001 Factor of P-characteristic = 0.9688
• 1010 Factor of P-characteristic = 0.9375
• 1011 Factor of P-characteristic = 0.9062
• 1100 Factor of P-characteristic = 0.8750
• 1101 Factor of P-characteristic = 0.8438
• 1110 Factor of P-characteristic = 0.8125
• 1111 Factor of P-characteristic = 0.7812
900719
63 NXP Semiconductors
Table 38. HSD, LSD electrical characteristics
Characteristics noted under conditions 5.3 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted. (56)
Symbol Characteristic Min. Typ. Max. Unit Notes
I charac
• 001 Factor of I-characteristic = 0.2500
• 010 Factor of I-characteristic = 0.1875
• 011 Factor of I-characteristic = 0.1562
I • 100 Factor of I-characteristic = 0.3125
• 000(default) Factor of I-characteristic = 0.1250
• 101 Factor of I-characteristic = 0.0938
• 110 Factor of I-characteristic = 0.0625
• 111 Factor of I-characteristic = 0.0312
Notes:
53. Frequency modulation active if FM_LSD_EN bit = 1.
54. 9.0 < VPWR < 16.5 V
55. R40480 delta versus temperature and R40481 delta versus voltage are already included in R40479 total error. Even with the temperature and
voltage variation, the final regulated current accuracy stays within R40479 specified limits.
56. The parameter is guaranteed in extended VPWR voltage range from 5.3 V to 6.0 V. VPRE_S has to be more than 5.2 V when VPWR is 5.3 V.
6.16.1 Introduction
The purpose of this interface is to supply the sensor and receive its output signal simultaneously (current). The 900719 provides four
protected back-to-back high-side switches tied to high-voltage through the WSxx_SUP pin, which can be switched on/off individually via
the SPI (WSx_DIS bits). In nominal mode, all the back-to-back high-side switches are turned on. After WSx_DIS is set to 0, input current
signal is masked for 55 μs if WS_OCF = 0 and 110 μs if WS_OCF = 1. During this period, corresponding WSO oputput is low. The
WSx_ON bit reports the status of each back-to-back high-side switch. WSxx_SUP pins can be supplied by a VPRE voltage or directly by
the battery through a diode (or directly connected to VPWRx pin). Two high-side switches are connected between WS12_SUP, and
respectively WS1_HS and WS2_HS. Two high-side switches are connected between WS34_SUP, and respectively WS3_HS and
WS4_HS.
WS12_SUP
WS34_SUP
Current threshold
22n dectection
Current Overcurrent
Monitoring shutdown
Logic WSAI
Gate Control 4
WSOx
Overtemperature
shutdown
SPI
Short-circuit
between channels
WS1_HS
Hall 22n (x4ch)
Sensor
GND_A
900719
NXP Semiconductors 64
The status of each switch is reported to the MCU by the SPI. The wheel speed conditioning converts a signal given by an active sensor
into a signal suitable for an MCU digital input. The input signal of an active sensor is a rectangular signal with variable pulse width, and
output currents of two levels (7.0/14 mA) or three levels (7.0/14/28 mA), nominal. The supported sensor types are standard active 2-level
wheel speed sensors (7.0/14 mA), smart active 2-level wheel speed sensors (7.0/14 mA), and VDA type 3-level wheel speed sensors (7.0/
14/28 mA).
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65 NXP Semiconductors
The WSx_SD_STAT bit is a status flag, which is set to a low during the short-circuit test. The WSx_S2S_SH flag reports a fault, but does
not turn off the sensor.
Back-to-back high-side
tWS_SHORT Sensor open or short to battery detection delay filter time 5.7 7.0 7.8 ms
Overcurrent detection
Notes:
57. One thermal sensor per WS module (WS12_SUP and WS34_SUP)
58. The parameter is tested at VCC5 = 5.0 V.
900719
NXP Semiconductors 66
6.16.10 Input signal conditioning description
The wheel speed information is provided on four dedicated pins (one for each wheel). The 900719 can adapt three types of wheel speed
sensors:
• Standard sensor (Type I)
• Pass-through mode for PWM-encoded sensors (Type II)
• Pulse encoded sensors (Type III)
The sensor type is selected by the dedicated bit (WSxCFG).
In those modes, the 900719 sends decoding data and the MCU can also decode.
Internal Sensor
Speed Signal
14 mA
Type I
7mA
14 mA
Type II
7mA
28 mA
Ty pe III 14 mA
7mA
Figure 28. Pulse description for three wheel speed sensor types
900719
67 NXP Semiconductors
6.16.12 Wheel sensor additional information output WSAI
WSAI pin transfers an additional information pulse to the MCU, which is selected by the SPI command (WSAI_S{1:0] bits).
Figure 29 shows the output signals for each speed sensor type.
Figure 29. Output signal for each wheel speed sensor type
900719
NXP Semiconductors 68
6.16.14 Counter description
The wheel speed counter module is composed of four inputs from the current threshold detection, multiplexed by a 2-bit SPI command
(WS_CNT_S[1:0] bits) and one 8-bit counter.
When the WS_CNT_RST bit is set high, the counter resets (WS_COUNTER [7:0] set to ‘0’) during two internal clock cycles, after the
WS_CNT_RST bit is high and the WS_OVF bit is set to a logic [0]. The WS_OVF bit is set to a logic [1] when the counter is in overflow.
When the WS_CNT_RST bit is set low, it has no effect on the counter. When the WS_CNT_EN bit is set high, the counter starts counting,
based on the signal from the multiplexer output after an internal clock cycle. The counter stops counting when the WS_CNT_EN bit goes
low and keeps the last value.
0 1 Counter running start with previous value (continue to run if WS_CNT_EN bit was already 1 before)
1 1 Counter reset at CSB rising edge and start to run started from 0 value
Notes:
59. Type I, II and III; no effect on duty cycle of input
900719
69 NXP Semiconductors
Magnetic
Signal
Pulse
Lengt
h t_H
Output
Signal
t_L
WxT2_NOTELEGAL bit
WxT2_STOP bit
WxT2_FAIL bit
Event Pulse length WxT2_DATA[4:0] Bits
DR-R and EL (rotation direction right and bad bandgap) tTH5 < tH < tTH6 0 0 0 0 1 0 0 0
Timing
Threshold level 1 tTH1 27 32 37 μs
900719
NXP Semiconductors 70
Table 49. Type II timing threshold level (continued)
Limit value
Parameter Symbol Unit Condition
Min. Typ. Max.
Timing (continued)
Threshold level 7 tTH7 1657 2016 2420 μs
Speed
pulse
I_high(4 X I-low) Data log bits
0 1 2 3 4 5 6 7 8
I_mid(2 X I-low)
I_low(7mA)
Initial bit
900719
71 NXP Semiconductors
Speed pulse
Data log 1 1 0 1 1 0 1 0 1
tp/2 tp tp/2 tp tp tp tp tp tp tp tp tp
Speed pulse
Data log 1 1 0 1 1 0
t_mc
tp /2 tp tp /2 tp tp tp tp tp tp _if
900719
NXP Semiconductors 72
Speed pulse
t_s top
Data log 1 1 0 1 1 0 1 0 1
tp/2 tp tp/2 t p tp tp tp tp tp tp tp tp
Normal speed 10 mA pulse with tP (AND) 20 mA pulse with tP Receive 9 bits (OR) rising edge of 20 mA pulse
High speed 10 mA pulse with tP (AND) 20 mA pulse with tP Rising edge of 20 mA pulse
Decoding can be restarted after the release of the decoding stop condition. After receiving the start point condition, the 900719 starts
decoding. If the pulse width of the start pulse is longer than tP_MAX or shorter than tP_MIN, decoding is not started. If no message is received
before ‘tSTOP’, the 900719 detects a timeout error.
Timing
tP Pulse width for speed pulse –20 % 50 +20 % μs
tMC_IF Max. inter-frame timing for high speed condition 2.0 2.3 2.7 ms
900719
73 NXP Semiconductors
6.17 Vehicle speed output VSO
6.17.1 Introduction
VSO is an open drain low-side driver, sending vehicle speed output signals from the VSO_IN (digital input pin) or WSOx. It is selected by
the dedicated SPI VSO_SEL bit. The WSOx output pin is selected by the dedicated VSO_S[1:0] bits.
11 WSO3 reporting
Drain-to-source V BAT1
Monitoring
SPI
Open Load
detection 10k
Logic
W heel Speed Overcurrent VSO
Sensor Interface shutdown
(tF_VSO)
W SO3 shutdown
MUX
W SO4
900719
NXP Semiconductors 74
6.17.6 VSO electrical characteristics
Table 53. VSO electrical characteristics
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
Power output
Timing
tD-ON_VSO/
Turn on/off delay time – – 1.0 μs
tD_OFF_VSO
Sink current
ISINK_VSO 30 50 70 μA
• VSO = 2.0 V during off state
Drain-to-source monitoring
Overcurrent shutdown
Overtemperature shutdown
TOT_VSO Overtemperature detection threshold 180 195 210 °C
6.18.1 Introduction
Two warning lamp pre-drivers are implemented. The warning lamp pre-drivers consist of a power FET with an open drain output. The
warning lamp pre-driver is driven either by a SPI command or ADIN1/2. WLD1 and WLD2 are controlled respectively by the corresponding
default state SPI bit. When the ADINx_EN SPI register bit is a logic [1], the ADINx input is dedicated to be used by the ADC and the
WLDx_ON SPI register bit controls the warning lamp WLDx pin. When the ADINx_EN SPI register bit is a logic [0], the ADINx input controls
the warning lamp WLDx pin and is not usable by the ADC. When the ADINx ADC input is selected to control the warning lamp, a high level
on the ADINx input asserts the WDLx output of the warning lamp low. When the WLDx_ON SPI register is selected to control the warning
lamp, a logic [1] in the WLDx_ON SPI register asserts the WDLx output of the warning lamp low. The warning lamp pre-driver is composed
of an output transistor, a pre-driver circuit, and a diagnostic circuitry, are shown in Figure 36.
900719
75 NXP Semiconductors
V BAT1
Drain-to-source
Monitoring
(x2ch)
Gate control
MUX
Overtemperature
shutdown
ADINx GND_P
900719
NXP Semiconductors 76
6.18.6 WLDx electrical characteristics
Table 54. WLDx electrical characteristics
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
Power output
Timing
tD-ON_WLD/
Turn on/off delay time for WLD – – 2.0 μs
tD_OFF_WLD
Drain-to-source monitoring
tVDS_WLD VDS state filter time 14.1 18.2 22 μs
Overcurrent shutdown
IOC_WLD Overcurrent shutdown threshold current 60 100 150 mA
Overtemperature shutdown
6.19.1 Introduction
10-bit ADC is referenced to the VCC5 voltage. It is used to read the following voltages:
• Three analog input pins, called ADINx
• Internal voltage supplies
• Average die temperature, which is used by the temperature warning detection circuit (TEMP)
Software engineering can monitor the 900719 internal supply voltage in real time with an ADC SPI reading and can use the fail-safe
function. If these ADC results are not within a certain range, the MCU can reset the 900719. The cyclic conversion sequence is described
in Table 55.
900719
77 NXP Semiconductors
Table 55. Cyclic conversion sequence
Parameters A/D reporting Comment
ADIN1 Input pin voltage
The ADIN1 and ADIN2 inputs are also used for the warning lamp1/2. The ADIN1/2_en bit of the SPI command is 1, to control the warning
lamp by wld_on bit.
ADC
ADINx
IADI_LK Input leakage current –2.0 – +2.0 μA
900719
NXP Semiconductors 78
Table 56. ADIN electrical characteristics
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
Temperature monitoring
TAD_TEMP Die temperature –20 % – +20 % °C (61)
Notes:
60. ADC resoluation is defined by VCC5 / 1023. The voltage of each parameter is calculated by Resolution x ADC data. Above VCC5, the ADC value
is 3F’hex and below GND 00’hex.
61. T(C) = 368.9 –101.7 x VAD_DEV_TEMP
6.20.1 Introduction
K-line module can be used for the following applications:
• ISO K-line interface (bi-direction half-duplex communication interfacing in automotive diagnostic applications)
• Vehicle speed output
The second VSO reporting comes from the WSOx digital input pins or from the TxK input pin, as presented in Table 58:
00 WSO0 reporting
01 WSO1 reporting
VSO2_S[1:0]
10 WSO2 reporting
11 WSO3 reporting
The WSOx output pin is selected by the VSO2_S[1:0] bits. The ISO K-line driver is composed of an output transistor, a pre-driver circuit,
and diagnostic circuitry, as shown in Figure 37.
900719
79 NXP Semiconductors
Receiver
RxK V BAT2 or V CC5
Drain-to-source or V CC3P3
M onitoring
W heel Speed Logic
SPI
Open Load
Sensor Interface detection 10k
Overcurrent ISO_VSO2
W SO1 shutdown
W SO2 Filter time
MUX
(tF_VSO)
Gate Control
MUX
W SO3
W SO4
Overtem perature
shutdown
TxK GND_P
900719
NXP Semiconductors 80
6.20.6 ISOK electrical characteristics
Table 59. ISOK electrical characteristics
Characteristics noted under conditions 6.0 V ≤ VPWR ≤ 20 V, – 40 °C ≤ TJ ≤ 150 °C, unless otherwise noted. Typical values noted reflect
the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Symbol Characteristic Min. Typ. Max. Unit Notes
Power input/output
Timings
ISO propagation delay
tPD_ISOK TxK high to TxK low and TxK low to TxK high – – 2.0 μs
RISO = 500 Ω, CISO = 500 pF
Sink current
ISINK_ISOK 30 50 70 μA
IISO_VSO2 = 2.0 V during off state
Drain-to-source monitoring
Overcurrent shutdown
Overtemperature shutdown
TOT_ISOK Overtemperature detection threshold 180 195 210 °C
900719
81 NXP Semiconductors
6.21 32-bit SPI interface
6.21.1 Introduction
The serial peripheral interface (SPI) has the following features:
• Full duplex, 4-wire synchronous communication
• Slave mode operation only
• Fixed SCLK polarity and phase requirements
• Fixed 32-bit command word
• SCLK operation up to 10 MHz
SPI communication attributes are shown in Figure 38.
tLEAD
tXFER DELAY
CSB
1/fSCLK
tWH tWL
1
tSU tH1 tSU2 tH2
Bit n*31
Bit1 Bit 0 Don’t
SO ( MSB) Bit n*30 Bit n*29 (LSB ) care
900719
NXP Semiconductors 82
Figure 39. 900719 SPI reporting
On the first SPI communication after reset, the CHIPID register is sent on the MISO. If the number of clock pulses within CSB low is not
32 or if there is a CRC check error, the current SPI write command is ignored and the FMSG bit is set to logic [1]. On the next SPI
command, MISO data reports a SPI transaction error by setting the Err bit to 1.
6.21.2 Watchdog
The 900719 implements a selectable windowed watchdog (T_WD_SEL[2:0] bits) using a ‘challenger’ to ensure a question/answer with
the MCU. The challenger is continuously triggered by the MCU in the open watchdog window, to prevent an error indication from being
generated by the 900719. The watchdog purpose is to ensure both the 900719 and the MCU are ‘alive’ to continue safe operation of the
ESC system:
1. Time (window) ensures both the MCU and the 900719 clocks are running
2. Calculation ensures both the MCU ALU and the 900719 logic are working (not hung up)
3. SPI ensures MCU/900719 communication is OK
Prior to the watchdog timer expiring, the processor should compute the correct 16-bit ALU value and write it to the MCU result (WDMR)
register. This event defines the end of the first watchdog timeout window (and the start of the second). When the WDMR SPI write
command occurs, the 900719 resets the timer, compute the ALU result, and update the 900719 result (WDAR) register. The MCU may
read the WDAR register and compare the 900719 result and the MCU result. Therefore, the MCU can ensure the 900719 is still OK. If no
watchdog reset is generated as a result of the 900719 comparison of WDMR and WDAR, the watchdog timer is reset. The MCU may re-
initialize the LFSR register at any time, and the new SEED used for the next computation. If the seed is not written, the previous LFSR
result is used to generate the next pseudo-random number. Any writes of 16’hFFFF to the seed register is ignored.
900719
83 NXP Semiconductors
900719 MCU
32-bis SPI
Shift Register Shift Register
ALU (Hardware/
ALU (Hardware)
Software)
900719 Result
MCU Result MR[15:0]
AR[15:0]
Fault / Interrupt
ERROR Counter
Handling
[15:0] [15:0]
900719
NXP Semiconductors 84
A selectable time window is required for each SPI read/write of MR[15:0]/AR[15:0] SPI words. The watchdog window time is changed by
T_WD_SEL[2:0] bits.The timer for the watchdog window is not reset by the watchdog window time change. New window time is set before
the timer reaches the new window time. If this timer expires, the RSTB pin is asserted immediately to reset MCU and the WDFLT SPI bit
is asserted.
Time window
Figure 43. MR and AD dynamic diagram
WD_ER_CNT is a 3-bit counter to track the number of MR/AR mismatches. For every mismatch, the count is incremented and for every
match, the count is decremented. If the count gets to 5, the RSTB pin is asserted to reset the MCU and the ALU_OVRFLW SPI flag is set.
900719
85 NXP Semiconductors
6.21.6 SPI integrity check
The 900719 checks all incoming frames for the correct CRC. If the CRC is invalid, the data is discarded (no data is stored internally) and
the CRC error flag is set in the SPI. Both the 900719 and the SPI master checks the CRC of their received data by processing all 32 SPI
bits.
C0 C1 C2 C3 C4 C5 C6 C7
Input
Data
T T T T T T T T
2 3 4 5 6 7 8
1*1 1*X 1*X 1*X 0*X 1*X 0*X 0*X 1*X
bit31 bit30 bit29 Bit28 bit27 bit26 bit25 bit24 bit23 bit22 bit21 bit20 bit19 bit18 bit17 bit16
MOSI W/R A6 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8
bit15 bit14 bit13 bit12 bit11 bit10 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
D7 D6 D5 D4 D3 D2 D1 D0 CRC7 CRC6 CRC5 CRC4 CRC3 CRC2 CRC1 CRC0
bit31 bit30 bit29 Bit28 bit27 bit26 bit25 bit24 bit23 bit22 bit21 bit20 bit19 bit18 bit17 bit16
MISO Err A6 A5 A4 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8
bit15 bit14 bit13 bit12 bit11 bit10 bit9 bit8 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
D7 D6 D5 D4 D3 D2 D1 D0 CRC7 CRC6 CRC5 CRC4 CRC3 CRC2 CRC1 CRC0
900719
NXP Semiconductors 86
6.21.8 Register address table
Table 61. Register mapping
Address
Register Description Table ref
A6 A5 A4 A3 A2 A1 A0 Hex
CHIPID 0 0 0 0 0 0 0 00 Chip information Table 62
SVCFG_BIST 0 0 0 0 0 0 1 01 Supervision config Table 64
VCCA_CLCK 0 0 0 0 0 1 0 02 VCCA frequency modulation parameters Table 66
WSCFG1 0 0 0 0 0 1 1 03 Wheel speed sensor 1/2/3/4 config1 Table 68
WSCFG2 0 0 0 0 1 0 0 04 Wheel speed sensor 1/2/3/4 config2 Table 70
VLVCLK 0 0 0 0 1 0 1 05 Valve clock frequency modulation and AVD config Table 72
LSD3/4K 0 0 0 0 1 1 0 06 LSD3 and LSD4 KP/KI settings Table 74
LSD9/10K 0 0 0 0 1 1 1 07 LSD9 and LSD10 KP/KI settings Table 76
LSD2/11K 0 0 0 1 0 0 0 08 LSD2 and LSD11 KP/KI settings Table 77
LSD5/8K 0 0 0 1 0 0 1 09 LSD5 and LSD8 KP/KI settings Table 78
HSDCFG 0 0 0 1 0 1 0 0A High-side driver configuration Table 79
PMDCLK 0 0 0 1 0 1 1 0B Pump motor driver clock parameters Table 81
CAN_CFG 0 0 0 1 1 0 0 0C CAN1 and CAN2 configuration register Table 83
ABISTFAIL 0 0 0 1 1 0 1 0D ABIST fault information Table 85
STUCKAT 0 0 0 1 1 1 0 0E ABIST STUCK-AT information Table 87
ABIST_DIS 0 0 0 1 1 1 1 0F ABIST disable config Table 89
WS_COUNT 0 0 1 0 0 0 0 10 Wheel speed counter Table 91
WS_S2S 0 0 1 0 0 0 1 11 Wheel speed sensor to senor short test Table 93
VLVEN 0 0 1 0 0 1 0 12 Enable for 12 valves, safe FET, and pump motor driver Table 95
LSD1DC 0 0 1 0 0 1 1 13 Duty cycle for PWM – LSD1 Table 97
LSD6DC 0 0 1 0 1 0 0 14 Duty cycle for PWM – LSD6 Table 99
LSD7DC 0 0 1 0 1 0 1 15 Duty cycle for PWM – LSD7 Table 100
LSD12DC 0 0 1 0 1 1 0 16 Duty cycle for PWM – LSD12 Table 101
LSD3I 0 0 1 0 1 1 1 17 Current setting for LSD3 Table 102
LSD4I 0 0 1 1 0 0 0 18 Current setting for LSD4 Table 104
LSD9I 0 0 1 1 0 0 1 19 Current setting for LSD9 Table 105
LSD10I 0 0 1 1 0 1 0 1A Current setting for LSD10 Table 106
LSD2I 0 0 1 1 0 1 1 1B Current setting for LSD2 Table 107
LSD11I 0 0 1 1 1 0 0 1C Current setting for LSD11 Table 108
LSD5I 0 0 1 1 1 0 1 1D Current setting for LSD5 Table 109
LSD8I 0 0 1 1 1 1 0 1E Current setting for LSD8 Table 110
PMDCFG 0 0 1 1 1 1 1 1F Pump motor driver configuration Table 111
WDCFG 0 1 0 0 0 0 0 20 Watchdog configuration Table 113
WDSEED 0 1 0 0 0 0 1 21 Watchdog seed Table 115
WDMR 0 1 0 0 0 1 0 22 Watchdog MCU result Table 117
WDAR 0 1 0 0 0 1 1 23 Watchdog ASIC result Table 119
ADIN1 0 1 0 0 1 0 0 24 ADC value of ADIN1 Table 121
900719
87 NXP Semiconductors
Table 61. Register mapping (continued)
Address
Register Description Table ref
A6 A5 A4 A3 A2 A1 A0 Hex
ADIN2 0 1 0 0 1 0 1 25 ADC value of ADIN2 Table 123
ADIN3 0 1 0 0 1 1 0 26 ADC value of ADIN3 Table 125
AD_VGS_HS 0 1 0 0 1 1 1 27 ADC value of VGS_HS Table 127
AD_DOSV 0 1 0 1 0 0 0 28 ADC value of DOSV Table 129
AD_VINTA 0 1 0 1 0 0 1 29 ADC value of VINT_A Table 131
AD_VINTD 0 1 0 1 0 1 0 2A ADC value of VINT_D Table 133
AD_VCP 0 1 0 1 0 1 1 2B ADC value of VCP Table 135
AD_VGS_PD 0 1 0 1 1 0 0 2C ADC value of VGS_PD Table 137
AD_VCC3P3 0 1 0 1 1 0 1 2D ADC value of VCC3P3 Table 139
AD_VCC5 0 1 0 1 1 1 0 2E ADC value of VCC5 Table 141
AD_VCC5EXT 0 1 0 1 1 1 1 2F ADC value of VCC5_EXT Table 143
AD_CAN1 0 1 1 0 0 0 0 30 ADC value of VCC_CAN1 Table 145
AD_CAN2 0 1 1 0 0 0 1 31 ADC value of VCC_CAN2 Table 147
AD_VPRE 0 1 1 0 0 1 0 32 ADC value of VPRE Table 149
AD_VCCA 0 1 1 0 0 1 1 33 ADC value of VCCA Table 151
AD_DIETMP 0 1 1 0 1 0 0 34 ADC value of die temperature Table 153
INT1 0 1 1 0 1 0 1 35 Interrupt register Table 155
LSD1/6/7/12F 0 1 1 0 1 1 0 36 LSD1, LSD6, LSD7 and LSD12 error flags Table 157
LSD3/4/9/10F 0 1 1 0 1 1 1 37 LSD3, LSD4, LSD9, LSD10 error flags Table 159
LSD2/ 5/8/11F 0 1 1 1 0 0 0 38 LSD2, LSD5, LSD8, LSD11 error flags Table 161
VLV_PMDF 0 1 1 1 0 0 1 39 Safe FET HSD and pump motor driver error flags Table 162
SVFLT 0 1 1 1 0 1 0 3A Supervision faults Table 164
VREG_FLG 0 1 1 1 0 1 1 3B Voltage regulator error flags Table 166
WSS12FLT 0 1 1 1 1 0 0 3C Wheel speed sensor 1/2 fault Table 168
WSS34FLT 0 1 1 1 1 0 1 3D Wheel speed sensor 3/4 fault Table 170
WSI1_T2 0 1 1 1 1 1 0 3E Wheel speed sensor 1 Type2 data Table 171
WSI2_T2 0 1 1 1 1 1 1 3F Wheel speed sensor 2 Type2 data Table 173
WSI3_T2 1 0 0 0 0 0 0 40 Wheel speed sensor 3 Type2 data Table 174
WSI4_T2 1 0 0 0 0 0 1 41 Wheel speed sensor 4Type2 data Table 175
WSI1_T3 1 0 0 0 0 1 0 42 Wheel speed sensor 1 Type3 data Table 176
WSI2_T3 1 0 0 0 0 1 1 43 Wheel speed sensor 2 Type3 data Table 178
WSI3_T3 1 0 0 0 1 0 0 44 Wheel speed sensor 3 Type3 data Table 179
WSI4_T3 1 0 0 0 1 0 1 45 Wheel speed sensor 4Type3 data Table 180
CAN_FLG 1 0 0 0 1 1 0 46 CAN1 and CAN2 error flags Table 181
WLD12 1 0 0 0 1 1 1 47 WLD configuration and error flags Table 183
ISOKVSO12 1 0 0 1 0 0 0 48 VSO configuration and error flags Table 185
VLV_VDS 1 0 0 1 0 0 1 49 Valve VDS monitoring Table 187
900719
NXP Semiconductors 88
6.21.9 Details of register mapping
Default X X X X X X X X X X X X
VCC5E PMD_ CLKFAI VPWR2 VPWR1 VCCAU VCC5E VCC5U VCC3P3 CPFAIL
Function OC_DI ABIST_RUN[1:0] LBIST_RUN[1:0] PWRDNCFG[1:0] LDIS OVDIS OVDIS VDIS XTUVDI VDIS UVDIS DIS
XTDIS S S
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 0 1 0 1 0 1 0 0 0 0 0 1 0 0
900719
89 NXP Semiconductors
Table 65. Description and configuration of the bits (continued)
Field Bit Description
00 LV and UV condition: zone 1 = safe mode, zone 2 = safe mode
01 LV and UV condition: zone 1 = normal mode, zone 2 = safe mode
PWRDNCFG[1:0]
10 LV and UV condition: zone 1 = normal mode, zone 2 = safe mode
11 LV and UV condition: zone 1 = normal mode, zone 2 = extended mode
0 14 MHz main/alt clock failure causes safe-mode and SPI flag is set
CLKFAILDIS
1 Fault causes SPI flag only
0 VPWR2 overvoltage causes safe mode and the SPI flag is set
VPWR2OVDIS
1 Fault causes SPI flag only
0 VPWR1 overvoltage causes safe mode and the SPI flag is set
VPWR1OVDIS
1 Fault causes SPI flag only
0 VCCA undervoltage causes safe mode, and the SPI flag is set
VCCAUVDIS
1 Fault causes SPI flag only
0 VCC5_EXT undervoltage causes external vcc5ext regulator shutdown (only) and the SPI flag is set
VCC5EXTUVDIS
1 Fault causes SPI flag only
0 VCC5 undervoltage causes safe mode, and SPI flag
VCC5UVDIS
1 Fault causes SPI flag only
0 VCC3P3 undervoltage causes safe mode, and SPI flag
VCC3P3UVDIS
1 Fault causes SPI flag only
0 Charge Pump undervoltage causes safe mode and SPI flag
CPFAILDIS
1 Fault causes SPI flag only
Element – – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – – 0 0 0 0 0 0 0 1 0 0
900719
NXP Semiconductors 90
Table 67. Description and configuration of the bits (continued)
Field Bit Description
0 14 MHz main/alt clocks and clock monitoring logic are enabled
CLKMONDIS
1 14 MHz alt clock and clock monitoring logic disabled
00 VCCA frequency modulation band: no modulation
01 VCCA frequency modulation band: ± 3.15 % / 1 step
FM_VCCA_MB[1:0]
10 VCCA frequency modulation band: ± 6.30 % / 2 step
11 VCCA frequency modulation band: ±12.6 % / 3 step
00 VCCA frequency modulation period: 8
01 VCCA frequency modulation period: 16
FM_VCCA_MP[1:0]
10 VCCA frequency modulation period: 32
11 VCCA frequency modulation period: 64
0 VCCA frequency modulation disable
FM_VCCA_EN
1 VCCA frequency modulation enable
Function WS4_DI
S
WS4_T
RK_DIS WS4CFG[1:0] WS3_DI WS3_T
S RK_DIS WS3CFG[1:0] WS2_DI WS2_T
S RK_DIS WS2CFG[1:0] WS1_DI WS1_T
S RK_DIS WS1CFG[1:0]
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
91 NXP Semiconductors
Table 69. Description and configuration of the bits (continued)
Field Bit Description
0 Wheel speed sensor power supply channel 2 enable
WS2_DIS
1 Wheel speed sensor power supply channel 2 disable
0 Leakage current tracking on channel 2 enable
WS2_TRK_DIS
1 Leakage current tracking on channel 2 disable
00 Wheel speed sensor channel 2 Type I
01 Wheel speed sensor channel 2 Type I
WS2CFG[1:0]
10 Wheel speed sensor channel 2 Type II
11 Wheel speed sensor channel 2 Type III
0 Wheel speed sensor power supply channel 1 enable
WS1_DIS
1 Wheel speed sensor power supply channel 1 disable
0 Leakage current tracking on channel 1 enable
WS1_TRK_DIS
1 Leakage current tracking on channel 1 disable
00 Wheel speed sensor channel 1 Type I
01 Wheel speed sensor channel 1 Type I
WS1CFG[1:0]
10 Wheel speed sensor channel 1 Type II
11 Wheel speed sensor channel 1 Type III
Function – –
RETR VSO_S[1:0] VSO2_S[1:0] WS_OT WS_DF WS_OC WSAI_S[1:0] WS_CN WS_CN WS_CNT_S[1:0]
Y_DIS _DIS F T_EN T_RST
Element – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
NXP Semiconductors 92
Table 71. Description and configuration of the bits (continued)
Field Bit Description
0 WSS rising/falling edge detection filter time = 0 μs
WS_DF
1 WSS rising/falling edge detection filter time = 18 μs
0 WSS overcurrent shutdown filter time = T1
WS_OCF
1 WSS overcurrent shutdown filter time = 4*T1
00 WSI10_1 input is selected for WSAI
01 WSI10_2 input is selected for WSAI
WSAI_S[1:0]
10 WSI10_3 input is selected for WSAI
11 WSI10_4 input is selected for WSAI
0 Wheel speed counter disable
WS_CNT_EN
1 Wheel speed counter enable
0 Wheel speed counter does not reset
WS_CNT_RST
1 Wheel speed counter reset
00 WSO1 is selected for counting
01 WSO2 is selected for counting
WS_CNT_S[1:0]
10 WSO3 is selected for counting
11 WSO4 is selected for counting
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 0 0 0 1 1 1 0 0 0 0 0 1 0 0
900719
93 NXP Semiconductors
Table 73. Description and configuration of the bits (continued)
Field Bit Description
00 Frequency modulation period = 8
01 Frequency modulation period = 16
FM_LSD_MP[1:0]
10 Frequency modulation period = 32
11 Frequency modulation period = 64
0 Frequency modulation disable
FM_LSD_EN
1 Frequency modulation disable
Element – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
NXP Semiconductors 94
Table 75. Description and configuration of the bits (continued)
Field Bit Description
0111 Factor of P-characteristic = 1.2188
0110 Factor of P-characteristic = 1.1875
0101 Factor of P-characteristic = 1.1562
0100 Factor of P-characteristic = 1.125
0011 Factor of P-characteristic = 1.0938
0010 Factor of P-characteristic = 1.0625
0001 Factor of P-characteristic = 1.0312
1000 Factor of P-characteristic = 1.0
X_KP[3:0]
0000 Factor of P-characteristic = 1.0
1001 Factor of P-characteristic = 0.9688
1010 Factor of P-characteristic = 0.9375
1011 Factor of P-characteristic = 0.9062
1100 Factor of P-characteristic = 0.875
1101 Factor of P-characteristic = 0.8438
1110 Factor of P-characteristic = 0.8125
1111 Factor of P-characteristic = 0.7812
Element – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Element – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
95 NXP Semiconductors
6.21.9.10 Message #09 - LSD5/8K
Table 78. SPI command register
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Function – – LSD8_KI[2:0] LSD8_KP[3:0] LSD5_KI[2:0] LSD5_KP[3:0]
Element – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Default – – – – – – – – 0 0 0 1 0 0 1 0
900719
NXP Semiconductors 96
6.21.9.12 Message #0B - PMDCLK
Table 81. SPI command register
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Element – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – 1 1 0 0 0 0 0 0 0 1 0 0
Default – – – – – – – – – – – – 0 1 0 1
900719
97 NXP Semiconductors
6.21.9.14 Message #0D - ABISTFAIL
Table 85. SPI command register
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
VCC5E VCC5V VCCAV RSTBFA CPUVF VCC5E
VCCAU XUVFAI VCC5U VCC3U PD_DO HD_DO VPWR2 VPWR1 VPWR1 VPWR2 VPWR1
Function XOTFAI CC3OT PREOT
L FAIL FAIL IL AIL VFAIL L VFAIL VFAIL VFAIL VFAIL OVFAIL OVFAIL UVFAIL LVFAIL LVFAIL
Element R R R R R R R R R R R R R R R R
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
NXP Semiconductors 98
Table 86. Description and configuration of the bits (continued)
Field Bit Description
0 No fault
VPWR1LVFAIL
1 ABIST failed on VPWR1 LV detection check
VCC5E VCC5V VCCAV RSTB_S CPUV_ VCCAU VCC5E VCC5U VCC3U PD_DO HD_DO VPWR2 VPWR1 VPWR1 VPWR2 VPWR1
Function XOT_SA CC3OT_ PREOT A SA V_SA XUV_SA V_SA V_SA V_SA V_SA OV_SA OV_SA UV_SA LV_SA LV_SA
SA _SA
Element R R R R R R R R R R R R R R R R
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
99 NXP Semiconductors
Table 88. Description and configuration of the bits (continued)
Field Bit Description
0 The comparator is stuck at low
VPWR1UV_SA
1 The comparator is stuck at high
0 The comparator is stuck at low
VPWR2LV_SA
1 The comparator is stuck at high
0 The comparator is stuck at low
VPWR1LV_SA
1 The comparator is stuck at high
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – – R R R R R R R R R
Default – – – – – – – 0 0 0 0 0 0 0 0 0
Default 1 1 1 1 1 1 1 1 0 1 0 1 0 1 0 1
900719
Function – – HSD_E PMD_E LSD8_E LSD5_E LSD11_ LSD2_E LSD10_ LSD9_E LSD4_E LSD3_E LSD12_ LSD7_E LSD6_E LSD1_E
N N N N EN N EN N N N EN N N N
Element – – R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M R/W/M
Default – – 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default – – – – – 0 0 0 0 0 0 0 0 0 0 0
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 0
900719
Default 0 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0
900719
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Element R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W R/W
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Element R R R R R R R R R R R R R R R R
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – – – R R R R R R R R R R
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
Function – VLVFLG WDFLT CAN12_ PMD_F LSD2/5/ LSD3/4/ LSD1/6/ WS34_F WS12_F WLD12_ ISOKVS VREG_ SPRVS CAN_W IGN_W
_F F 8/22_F 9/10_F 7/12_F F O_F F N_F U U
Default – 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
Function – LSD12_ LSD12_ LSD12_ LSD7_O LSD7_O LSD7_O LSD6_O LSD6_O LSD6_O LSD1_O LSd1_O LSD1_O
OT OC OP T C P T C P T C P
Element – RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default – 0 0 0 0 0 0 0 0 0 0 0 0
900719
Function LSD10_ LSD10_ LSD10_ LSD10_ LSD9_C LSD9_O LSD9_O LSD9_O LSD4_C LSD4_O LSD4_O LSD4_O LSD3_C LSD3_O LSD3_O LSD3_O
CRER OT OC OP RER T C P RER T C P RER T C P
Element RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Function LSD8_C LSD8_O LSD8_O LSD8_O LSD5_C LSD5_O LSD5_O LSD5_O LSD11_ LSD11_ LSD11_ LSD11_ LSD2_C LSD2_O LSD2_O LSD2_O
RER T C P RER T C P CRER OT OC OP RER T C P
Element RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
V2V_ST PMD_L PMD_P PMD_O PMD_O AVD_FL HSD_DI HSD_LE HSD_O HSD_O HSD_O HSD_O HSD_O
Function – – – AT D DD_DIS T C_OP T SC AK T C_OP V PEN_R PEN_L
C
Element – – – RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default – – – 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
Element R R RLW – RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default 0 0 0 – 0 0 0 0 0 0 0 0 0 0 0 0
900719
VCC5E VCC5E VCC5E VPRE_I VPRE_S VPRE_ VPRE_ VCCA_ VCCA_ VCCA_ VCC5_U VCC5_ VCC5_V VCC3P3 VCC3P3
Function – XT_UV XT_OV XT_OT LIM UP_DIS UV OV VPRE_ UV OV V OV CC3_OT _UV _OV
C OT
Element – RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default – 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
Element RLW RLW RLR RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
Function WS4_R WS4_S2 W4T1_L WS4_S WS4_O WS4_O WS4_O WS4_O WS3_R WS3_S2 W3T1_L WS3_S WS3_O WS3_O WS3_O WS3_O
EVCUR S_SH KG H2BAT P_SH PEN T C EVCUR S_SH KG H2BAT P_SH PEN T C
Element RLW RLW RLR RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
Element – – RLR RLR RLR RLR RLR RLR RLR RLR RLR
Default – – 0 1 1 1 1 1 1 1 1
Element – – RLR RLR RLR RLR RLR RLR RLR RLR RLR – – – – –
Default – – 0 1 1 1 1 1 1 1 1 – – – – –
Element – – RLR RLR RLR RLR RLR RLR RLR RLR RLR – – – – –
Default – – 0 1 1 1 1 1 1 1 1 – – – – –
900719
Element – – RLR RLR RLR RLR RLR RLR RLR RLR RLR – – – – –
Default – – 0 1 1 1 1 1 1 1 1 – – – – –
Element – – 0 1 1 1 1 1 1 1 1 1 0 1 1 1
Default – – RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR
Element – – 0 1 1 1 1 1 1 1 1 1 0 1 1 1
Default – – RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR
Element – – 0 1 1 1 1 1 1 1 1 1 0 1 1 1
Default – – RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR
900719
Element – – 0 1 1 1 1 1 1 1 1 1 0 1 1 1
Default – – RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR RLR
Element – – – – – – RLW RLW RLW RLW RLW RLW RLW RLW RLW RLW
Default – – – – – – 0 0 0 0 0 0 0 0 0 0
900719
Function – – WLD2_ WLD1_ WLD2_ WLD1_ WLD2_ WLD1_ WLD2_ WLD1_ WLD2_ WLD1_ ADIN2_ ADIN1_ WLD2_ WLD1_
OP_DIS OP_DIS VDS VDS OP OP OT OT OC OC EN EN ON ON
Element – – R/W R/W R R RLW RLW RLW RLW RLW RLW R/W R/W R/W/M R/W/M
Default – – 0 0 0 0 0 0 0 0 0 0 1 1 0 0
900719
VSO_O VSO_O VSO_V VSO_O VSO_O VSO_S K_LINE ISOK_V ISOK_V VSO2_ VSO2_V VSO2_ VSO2_S
Function – – – T C DS PEN P_DIS EL _DIS SO2_OT SO2_O OP DS OP_DIS EL
C
Element – – – RLW RLW R RLW R/W R/W R/W RLW RLW RLW R R/W R/W
Default – – – 0 0 0 0 0 0 0 0 0 0 0 0 0
900719
Element – – – – R R R R R R R R R R R R
Default – – – – 0 0 0 0 0 0 0 0 0 0 0 0
900719
WSS X X X X X X X X X
VALVE/HSD X X X X X X X X X X X X X X X
PMD X X X X X X X X X X X X X X
WLD X X X X X X X X X X X X
CAN X X X X X X X X
ISOK X X X X X X X X X
ABIST X X X X X X X
Watchdog X X X X X X
ADC X X
PORB X
SPVSN/FLAG X X X
900719
6.22.1 LBIST
LBIST checks the logic core integrity, and is performed on-demand by the MCU by setting LBIST_RUN[1:0] bits to 10. However,
LBIST_RUN[1:0] = 00 or 11 are not applicable. Those commands are ignored. After the LBIT execution, LBIST_RUN[1:0] to 01 is required
to be reset to perform a second time. LBIST runs scan patterns on internal logic. While LBIST is running, these sub-systems are shut-off.
The BIST pin status can be used to monitor the procedure. The LBIST and BIST pins are set high.
During an L-bist issue (LBIST_FAIL bit = 1), the microcontroller can request an escape path via an external reset by the RSTB pin (forced
to 0). If the high-side pre-driver was activated, the LBIST activation is delayed by tLSDx_HD_G to turn-off the valves and the safe switch
properly. The cumulated BIST duration time should be below 15 ms.
6.22.2 ABIST
ABIST checks the UV comparator integrity of power supply module (VPRE, VCCA, VCC3P3, and VCC5), and also the comparators driving
the reset table (VPWRx, …) by forcing the toggling of its own comparators’ input, and is requested by SPI command. ABIST is performed
on-demand by setting ABIST_RUN[1:0] to 10. However, ABIST_RUN[1:0] = 00 or 11 are not applicable. Those commands are ignored.
After the ABIT execution, ABIST_RUN[1:0] to 01 is required to be reset to perform a second time. The BIST pin status can be used to
monitor the procedure. The ABIST and BIST pins are set high.
During an ABIST issue (ABIST_FAIL bit = 1), the microcontroller can request an escape path via an external reset by the RSTB pin (forced
to 0). While the ABIST is running, the reporting comparators are masked (during this phase in case of a fault, the event is not taken into
account). If the ABIST_FAIL bit was set, MCU can determine which supervision feature(s) failed by reading the ABIST register. The test
result stores in the dedicated resister (ABISTFAIL). The bit is set to ‘0’ if the test passed and ‘1’ if the test failed. In addition, stuck-high or
stuck-low (including the RSTB input pin) can be diagnosed separately for each test via a dedicated resister (STUCKAT). Each of the
supervision features tested during ABIST (including the RSTB input pin) are able to be skipped by setting the corresponding ABIST-
Disable bit. The cumulated BIST duration time should be below 15 ms.
900719
7.1 Introduction
This typical application presents an ESC application schematic using the 900719.
VBAT1 10µ
ESP/ESC braking control unit
VCCA_SUP
M2 VBAT1
VPWR2
VPWR1
VCCA
MCU
VPRE_SUP
4 LSDx
Solenoid
Power PWMed Valves Coils
M1 VCC5
VPRE_S Supply Control (x4Ch) x4
VCC3P3
External VCC5_EXT
5.0V Supply Current 8 LSDx
DOSV Regulated Solenoid
RSTB
Valves Control 2 HSDx Coils
IGN Supervision (x8Ch) x8
VBAT1
Ignition VBAT2
PD_D M3
PD_G
SI, SO, SLK, CSB
4
32bits SPI Pump Motor PD_S
WSAI
with active
WSOx freewheeling M4
VSO1 diode FRW_G
M
WSx_HS 4 Wheel Speed 4
LF, RF, Hall Interface
TxDx 2
RxDx 2
TXK
VBAT1
x4
VSO_IN Vehicule
Speed
Output CAN High K-Line Warning M5 10k 10k
Speed Interface Lamps
(x2Ch) (x2Ch) 2
ECU Voltages ADINx 4
Monitoring 10bits A/D x2
4
900719
R5
H S D x (3 0 0 m Ω ) & 2
RXDx
Q4
S o le n o id C o ils LS D x 8 LSDx C A N H ig h S p e e d 2
TXDx
x8 (2 0 0 /3 0 0 m Ω ) In te rfa c e s 2
C A Nx_H
VBAT1
x8 C27 C u rre n t R e g u la te d (x 2 C h ) 2
C AN x_L
HSDx 2 V a lv e s (x 8 C h )
10k 10k 10k
x2
L S W a rn in g L a m p
C 14 P re -d riv e r 2 W LD x
1 0 b its A D C (x 2 C h ) C22
3 3 (x 3 C h ) x2
A D IN x
G N D _A G ND_P G N D _D1
900719
Capacitors
Diodes
900719
Diodes (continued)
Inductors
Transistors
Resistors
Notes:
62. NXP does not assume liability, endorse, or warrant components from external manufacturers that are referenced in circuit drawings or tables.
While NXP offers component recommendations in this configuration, it is the customer’s responsibility to validate their application.
63. Critical Components. For critical components, it is vital to use the manufacturer listed.
900719
900719
900719
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