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    EE143 Semiconductor Tutorial: - Electrons and "Holes" - Dopants in Semiconductors - Electron Energy Band Diagram

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    Bimugdha Biswas
    This document provides a tutorial on semiconductor physics concepts including electrons and holes, dopants in semiconductors, electron energy band diagrams, carrier mobility, resistivity, and sheet resistance. It was presented by Professor N Cheung of UC Berkeley. The tutorial covers key topics such as the density of states in conduction bands illustrated using the analogy of seating in an amphitheater, the concept of holes in the valence band, how carrier concentrations are determined from dopant concentrations, and how carrier mobility and electrical resistance depend on doping levels.

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    EE143 Semiconductor Tutorial: - Electrons and "Holes" - Dopants in Semiconductors - Electron Energy Band Diagram

    Uploaded by

    Bimugdha Biswas
    69 views13 pages
    This document provides a tutorial on semiconductor physics concepts including electrons and holes, dopants in semiconductors, electron energy band diagrams, carrier mobility, resistivity, and sheet resistance. It was presented by Professor N Cheung of UC Berkeley. The tutorial covers key topics such as the density of states in conduction bands illustrated using the analogy of seating in an amphitheater, the concept of holes in the valence band, how carrier concentrations are determined from dopant concentrations, and how carrier mobility and electrical resistance depend on doping levels.

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    Semiconductor Tutorial

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    This document provides a tutorial on semiconductor physics concepts including electrons and holes, dopants in semiconductors, electron energy band diagrams, carrier mobility, resistivity, and sheet resistance. It was presented by Professor N Cheung of UC Berkeley. The tutorial covers key topics such as the density of states in conduction bands illustrated using the analogy of seating in an amphitheater, the concept of holes in the valence band, how carrier concentrations are determined from dopant concentrations, and how carrier mobility and electrical resistance depend on doping levels.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    69 views13 pages

    EE143 Semiconductor Tutorial: - Electrons and "Holes" - Dopants in Semiconductors - Electron Energy Band Diagram

    Uploaded by

    Bimugdha Biswas
    This document provides a tutorial on semiconductor physics concepts including electrons and holes, dopants in semiconductors, electron energy band diagrams, carrier mobility, resistivity, and sheet resistance. It was presented by Professor N Cheung of UC Berkeley. The tutorial covers key topics such as the density of states in conduction bands illustrated using the analogy of seating in an amphitheater, the concept of holes in the valence band, how carrier concentrations are determined from dopant concentrations, and how carrier mobility and electrical resistance depend on doping levels.

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    of 13

    EE143 S06

    Semiconductor Tutorial

    EE143 Semiconductor Tutorial


    -Electrons and Holes - Dopants in Semiconductors - Electron Energy Band Diagram - Mobility - Resistivity and Sheet Resistance

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    Why bother knowing Electrons and Holes ?


    Microfabrication controls dopant concentration distribution ND(x) and NA(x)

    Electron Concentration n(x) Hole Concentration p(x)

    Electric Field Carrier Mobility Fermi level Ef (x) E(x) Effect

    Electrical resistivity Sheet Resistance


    Professor N Cheung, U.C. Berkeley

    PN Diode Characteristics MOS Capacitor MOS Transistor


    2

    EE143 S06

    Semiconductor Tutorial

    Electron Potential Energy

    Conduction Band and Valence Band


    Available states at discreet energy levels Available states as continuous energy levels inside energy bands

    Isolated atoms
    Professor N Cheung, U.C. Berkeley

    Atoms in a solid
    3

    EE143 S06

    Semiconductor Tutorial

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    The Simplified Electron Energy Band Diagram

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    Density of States at Conduction Band: The Greek Theater Analogy Note that the number of available seats at same potential energy increases with higher electron energy

    Energy Gap (no available seats)

    Electron Energy

    Plan View of the amphitheatre at Epidarus

    Amphitheatre at Epidarus, Greece. Built c350 BC.

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    Concept of a hole An unoccupied electronic state in the valence band is called a hole

    Conduction Band

    Valence Band

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    Electron and Hole Concentrations for homogeneous semiconductor at thermal equilibrium

    n: electron concentration (cm-3) p : hole concentration (cm-3) ND: donor concentration (cm-3) NA: acceptor concentration (cm-3) 1) Charge neutrality condition: 2) Law of Mass Action :

    Assume completely ionized to form ND+ and NAND + p = NA + n n p = ni2

    Note: Carrier concentrations depend on NET dopant concentration (ND - NA) !

    Professor N Cheung, U.C. Berkeley

    EE143 S06

    Semiconductor Tutorial

    How to find n, p when Na and Nd are known n- p = Nd - Na (1) pn = ni2 (2) (i) If Nd -Na > 10 ni : n Nd -Na (ii) If Na - Nd > 10 ni : p Na- Nd

    Professor N Cheung, U.C. Berkeley

    10

    EE143 S06

    Carrier Mobility
    |v|=E

    Semiconductor Tutorial

    Mobile charge-carrier drift velocity v is proportional to applied E-field:

    n
    Mobility depends on (ND + NA) !

    (Unit: cm2/Vs)

    Professor N Cheung, U.C. Berkeley

    11

    EE143 S06

    Semiconductor Tutorial

    Electrical Resistance of Layout Patterns (Unit of RS: ohms/square) W = 1m Metal contact Top View 1m

    R = Rs

    L=1m

    R = Rs

    1m

    R 2.6Rs R = 3Rs R = Rs/2


    Professor N Cheung, U.C. Berkeley

    R = 2Rs
    12

    EE143 S06

    Semiconductor Tutorial

    Resistance of Arbitrary Layout Patterns


    Resistor Paper Pattern IC Resistor Pattern

    You know RS resistor of of a microfabricated layer by 4-point probe method. Will this layout pattern give the desired R value ?
    microns centimeters magnified

    Before you do the layout and fabricate the structure which is expensive and time consuming. Cut out a similar pattern on a resistor paper with a known RS paper Measure Rpaper experimentally across the two terminals

    You can deduce


    Professor N Cheung, U.C. Berkeley

    RIC resistor = Rpaper

    RSresistor RSpaper
    13

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