WAVELENGTH TRANSMISSION RANGE AND REFRACTIVE INDEX POLARIZATION FABRICATION TOLERANCES

Malus’s Law:
USEFUL EQUATIONS AND INFORMATION

USEFUL EQUATIONS AND INFORMATION

Surface Tolerances Precision Laser Grade Mfg Limit
Optical Material Transmission Range | Wavelength (nm)/Index of Refraction 1 2
I= c e0 E0 cos2v = I0 cos2v Surface quality (scratch/dig) 40-20 10-5 5-2
2
BK7 532 800 1064 1550 Surface roughness (Å, RA) 20 5 2.5
h =1.51947 h =1.51078 h =1.50663 h =1.50065
Faraday Rotation:
Spherical irregularity (waves, P-V @ 633 nm) 0.5 0.2 0.01
b = VBd,
UV grade 193 248 266 1064 Spherical radius (fringes) 5 3 0.5
Fused Silica h =1.56077 h =1.50855 h =1.49968 h =1.44963 b = angle of rotation
Flat irregularity (waves, P-V @ 633 nm) 0.5 0.1 0.04
Optical Activity:
193 213 248 3000
CaF2 h =1.50153 h =1.4854 h =1.46803 h =1.41785 d-rotary is when hl > hr
Dimensional Tolerances Commercial Precision Mfg Limit
l-rotary is when hr > hl
0.1 0.4 0.7 1.0 3.0 6.0 10 Diameter (mm) +0.000/-0.250 +0.000/-0.025 +0.000/-0.005

()
pd
b= (hl4hr) 1
l0 0 Length & Width (mm) ±0.050 +0.000/-0.025 +0.000/-0.010
0
Thickness (mm) ±0.250 ±0.050 ±0.005

()
1
1
0 Centration (edge thickness difference, mm) 0.050 0.010 0.005
FOCAL LENGTH FORMULAS FOR SINGLET LENSES 1
0 Wedge <10 ± 5 arc min ≤1 arc sec ≤0.5 arc sec

()
1 Clear aperture (%) 85 90 100
Focal Length Back Focal Distance Front Focal Distance 41
The general tolerance specifications above provide a guideline regarding manufacturing capabilities for optics ranging in size from 3-100mm.
Type Orientation ƒ BFD FFD 0

()
The manufacturing limits are not absolute; tighter tolerances may be possible. Part specific tolerances may vary depending on component size,
2 0 1 shape, and/or material. l/100 surfaces are achievable. Call us for more details.
R1 = R1
[(h41)#( R1 4 R1 = t hR(h41) ] [ tc (h41)
] [ tc (h41)
]
c -1
1
General ƒ# 1 4 ƒ# 1 = 0
R2 = R2 1 R 2 1 2 hR1 hR2 0
R
COATINGS
tc (h41)
R1 = R
[ ] Magnetron

()
Plano-Convex ƒ# 1 4 ƒ 1
R2 = r E-beam IAD APS IBS Sputtering
h41 hR 0
41 Stoke’s
4R tc (h41)
Plano-Concave
R1 = 4R
[
ƒ# 1 = ] ƒ 0 Vector Laser Damage Threshold* >20J/cm2 >40J/cm2 >40J/cm2 >20J/cm2 >40J/cm2

()
R2 = r

()
h41 hR
1 S0
tc (h41) S1 Scatter and
[
2(h41) tc (h41)2
] [ ]
tc (h41) 0
R1 = R
[ ] <0.2 <0.15 <0.15 <1 PPM <50 PPM
-1
Bi-Convex 4 ƒ# 1 4 ƒ# 1 4 0 S2 Absorption (%)
R2 = 4R R hR2 hR hR 41
S3
tc (h41)
Bi-Concave
R1 = 4R
R2 = R
4 [
2(h41)
R
4
tc (h41)2
hR2
] -1
[
ƒ# 1 =
tc (h41)
] ƒ# 1 =[ hR
] Surface Roughness (Å rms) 5 7 7 <1 <9
hR LASER SELECTION GUIDE
Wet/Dry Shift (range) (%) <0.8 <0.3 0.00 0.00 0.00
πωo2
Rayleigh length zR = These values may be slightly higher or lower depending on deposition conditions and other process related parameters. Overall plasma processes
have lower absorptions than conventional e-beam technologies. *Laser-Inducer Damage Threshold (LIDT) depends on Test Wavelength, Pulse Width,
l repetition rate and inspection method. This data is from 1064 nm, 10 ns, 20 Hz.
1
BASIC EQUATIONS INTERNAL REFLECTION DIFFRACTION-LIMITED BEAM Sum Frequency l sum =
& CRITICAL ANGLE DIAMETER DIVERGENCE Generation 1 1
= E beam 190nm - 10µm
l1 l2

]2ab 44ac
2 Ion Assisted 250nm - 2200nm
4b 8 vc = sin-1(h2 / h1), for h2< h1 p p d 0 D0 Difference 1
x= M2 = w0V0 = l difference =
l l 2 2ƒ Frequency Advanced Plasma Source 250nm - 2200nm
Generation 1 1
4
]sin v 4(h /h )
(h2 / h1)2 cosv14i 2 2
1 l1 l2 Ion Beam Sputtering 250nm - 2200nm
OD = log10 ( ) rp =
1 2 1
Achievable focal spot diameter, d0
T Brightness or P
]
2 2 2
(h / h ) cosv =i sin v 4(h /h ) M2 4 lƒ
Magnetron Sputtering 250nm - 2200nm
2 1 1 1 2 1
d0 = Radiance B=
Snell’s Law: pD0 of Laser Beam πωo2 πv 2 0.1 0.2 1.0 3.0 10 20

h1sinv1 = h2sinv2
]
2 2
cosv 4i sin v 4(h / h )
1 1 2 1
r =
s AVAILABLE LASER WAVELENGTHS (nm)
Fresnel reflection at 0°:
]
2 2
cosv =i sin v 4(h / h ) 10,000

MAXIMUM POWER (mW)

1 1 2 1 ETALONS
R= (h24h1 2
h2=h1
) tp = ts = 0
1000
I 1
T = trans = 100
ƒ Number: I inc
]sin v
cosv1 sin2v14h2 4R

ƒ/# =
ƒ
=
1 d = fs4fp = 2
h2
tan-1 [ 2
], 1=
(14R) 2
sin2 (d/2)
10
D 2(NA) where h =
1 l2
h1 FSR = 1
2d 325 375 405 442 454 457 465 473 476 483 488 496 502 515 520 532 543 561 568 594 633 635 640 647 650 660 670 676 685 780 830 1310 1550
Mirror Focal Length:
DPSS
Radius of Curvature h2 FSR
ƒ=
2 vB = tan-1 h
1
( ) FWHM =
F
DIODE
GAS

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TechGuide_Cover_working.indd 2 2/23/2012 1:58:00 PM

 WAVELENGTH TRANSMISSION RANGE AND REFRACTIVE INDEX POLARIZATION FABRICATION TOLERANCES
Malus’s Law:
USEFUL EQUATIONS AND INFORMATION

USEFUL EQUATIONS AND INFORMATION

Surface Tolerances Precision Laser Grade Mfg Limit
Optical Material Transmission Range | Wavelength (nm)/Index of Refraction 1 2
I= c e0 E0 cos2v = I0 cos2v Surface quality (scratch/dig) 40-20 10-5 5-2
2
BK7 532 800 1064 1550 Surface roughness (Å, RA) 20 5 2.5
h =1.51947 h =1.51078 h =1.50663 h =1.50065
Faraday Rotation:
Spherical irregularity (waves, P-V @ 633 nm) 0.5 0.2 0.01
b = VBd,
UV grade 193 248 266 1064 Spherical radius (fringes) 5 3 0.5
Fused Silica h =1.56077 h =1.50855 h =1.49968 h =1.44963 b = angle of rotation
Flat irregularity (waves, P-V @ 633 nm) 0.5 0.1 0.04
Optical Activity:
193 213 248 3000
CaF2 h =1.50153 h =1.4854 h =1.46803 h =1.41785 d-rotary is when hl > hr
Dimensional Tolerances Commercial Precision Mfg Limit
l-rotary is when hr > hl
0.1 0.4 0.7 1.0 3.0 6.0 10 Diameter (mm) +0.000/-0.250 +0.000/-0.025 +0.000/-0.005

()
pd
b= (hl4hr) 1
l0 0 Length & Width (mm) ±0.050 +0.000/-0.025 +0.000/-0.010
0
Thickness (mm) ±0.250 ±0.050 ±0.005

()
1
1
0 Centration (edge thickness difference, mm) 0.050 0.010 0.005
FOCAL LENGTH FORMULAS FOR SINGLET LENSES 1
0 Wedge <10 ± 5 arc min ≤1 arc sec ≤0.5 arc sec

()
1 Clear aperture (%) 85 90 100
Focal Length Back Focal Distance Front Focal Distance 41
The general tolerance specifications above provide a guideline regarding manufacturing capabilities for optics ranging in size from 3-100mm.
Type Orientation ƒ BFD FFD 0

()
The manufacturing limits are not absolute; tighter tolerances may be possible. Part specific tolerances may vary depending on component size,
0 1 shape, and/or material. l/100 surfaces are achievable. Call us for more details.
tc (h41)2
R1 = R1
[ 1
] [ tc (h41)
] [ tc (h41)
]
1 -1
1
General (h41)#( 4 = ƒ# 1 4 ƒ# 1 = 0
R2 = R2 R1 R2 hR1R2 hR1 hR2 0
R
COATINGS
tc (h41)
R1 = R
[ ] Magnetron

()
Plano-Convex ƒ# 1 4 ƒ 1
R2 = r E-beam IAD APS IBS Sputtering
h41 hR 0
41 Stoke’s
4R tc (h41)
Plano-Concave
R1 = 4R
[
ƒ# 1 = ] ƒ 0 Vector Laser Damage Threshold* >20J/cm2 >40J/cm2 >40J/cm2 >20J/cm2 >40J/cm2

()
R2 = r

()
h41 hR
1 S0
tc (h41) S1 Scatter and
[
2(h41) tc (h41)2
] [ ]
tc (h41) 0
R1 = R
[ ] <0.2 <0.15 <0.15 <1 PPM <50 PPM
-1
Bi-Convex 4 ƒ# 1 4 ƒ# 1 4 0 S2 Absorption (%)
R2 = 4R R hR2 hR hR 41
S3
tc (h41)
Bi-Concave
R1 = 4R
R2 = R
4 [
2(h41)
R
4
tc (h41)2
hR2
] -1
[
ƒ# 1 =
tc (h41)
] ƒ# 1 =[ hR
] Surface Roughness (Å rms) 5 7 7 <1 <9
hR LASER SELECTION GUIDE
Wet/Dry Shift (range) (%) <0.8 <0.3 0.00 0.00 0.00
πωo2
Rayleigh length zR = These values may be slightly higher or lower depending on deposition conditions and other process related parameters. Overall plasma processes
have lower absorptions than conventional e-beam technologies. *Laser-Inducer Damage Threshold (LIDT) depends on Test Wavelength, Pulse Width,
l repetition rate and inspection method. This data is from 1064 nm, 10 ns, 20 Hz.
1
BASIC EQUATIONS INTERNAL REFLECTION DIFFRACTION-LIMITED BEAM Sum Frequency l sum =
& CRITICAL ANGLE DIAMETER DIVERGENCE Generation 1 1
= E beam 190nm - 10µm
l1 l2

]2ab 44ac
2 Ion Assisted 250nm - 2200nm
4b 8 vc = sin-1(h2 / h1), for h2< h1 p p d 0 D0 Difference 1
x= M2 = w0V0 = l difference =
l l 2 2ƒ Frequency Advanced Plasma Source 250nm - 2200nm
Generation 1 1
4
OD = log10 (
1
T
) rp =
(h2 / h1
] 4(h /h
)2 cosv14i sin2v 1 2 1 )2
Achievable focal spot diameter, d0
Brightness or P
l1 l2 Ion Beam Sputtering 250nm - 2200nm

]
2 2 2
(h / h ) cosv =i sin v 4(h /h ) M2 4 lƒ
Magnetron Sputtering 250nm - 2200nm
2 1 1 1 2 1
d0 = Radiance B=
Snell’s Law: pD0 of Laser Beam πωo2 πv 2 0.1 0.2 1.0 3.0 10 20

h1sinv1 = h2sinv2
]
2 2
cosv 4i sin v 4(h / h )
1 1 2 1
r =
s AVAILABLE LASER WAVELENGTHS (nm)
Fresnel reflection at 0°:
]
2 2
cosv =i sin v 4(h / h ) 10,000

MAXIMUM POWER (mW)

1 1 2 1 ETALONS
R= (h24h1 2
h2=h1
) tp = ts = 0
1000
I 1
T = trans = 100
ƒ Number: I inc
]sin v
cosv1 sin2v14h2 4R

ƒ/# =
ƒ
=
1 d = fs4fp = 2
h2
tan-1 [ 2
], 1=
(14R) 2
sin2 (d/2)
10
D 2(NA) where h =
1 l2
h1 FSR = 1
2d 325 375 405 425 442 454 457 465 473 476 483 488 496 502 515 520 532 543 561 568 594 633 635 640 647 650 660 670 676 685 780 830
Mirror Focal Length:
DPSS
Radius of Curvature h2 FSR
ƒ=
2 vB = tan-1 h
1
( ) FWHM =
F
DIODE
GAS

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Tech_Guide_Index_working.qxd 2/23/2012 11:48 AM Page 10

Technical Guide Index

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OEM

Acronyms, Abbreviations, and Units

Q ohm ESPI electronic speckle pattern NBS National Bureau of
msec microsecond interferometry Standards
mW microwatt FC fiber coupling ND neutral density
A ampere ft foot NEP noise-equivalent power
A analog fsec femtosecond NIST National Institute for
A/D analog to digital FSR free spectral range Science and Technology
ac alternating current FWHM full width at half nm nanometer
ACC Automatic Current maximum OD Optical Density
Control g gram OD outside diameter
ANSI American National GQ gigaohm OEM original equipment
Standards Institute HEBBAR™ high-efficiency broad- manufacturer
AO acousto-optic band antireflection pA picoampere
APC automatic power control HEL high-energy laser PC personal computer
AR antireflection HP horizontal points PCI Peripheral Component
BFL back focal length Hz Hertz Interconnect
BNC Berkeley Nucleonics IC integrated circuit PCMCIA Personal Computer
Corporation IEC International Memory Card
CA clear aperture Electrotechnical International
Technical Guide Index

CAN controller area network Commission Association. Often

CCD charge-coupled device IEEE Institute of Electrical and called PC cards
CDRH Center for Devices and Electronics Engineers pF picofarad
Radiological Health IMS integrated modular p-p peak-to-peak
CFC chlorofluorocarbons system PSD power spectral density
CIE International in. inch PZT piezo electric transducers
Commission on IR infrared QCW quasi continuous wave
Illumination ISO International Standards RH relative humidity
(Commission Organization rms root mean square
Internationale de IVM integrated vision module sec second
l'Éclairage) kg kilograms SPC statistical process control
CLT clear lightweight kV kilovolt T transmissibility
technology lb pound TE thermoelectric
CMOS Complementary Metal LCD liquid crystal display TEC thermoelectric cooler
Oxide Semiconductor LED light emitting diode TIR total internal reflection
CVD chemical vapor LSO laser safety officer TSA transverse spherical
deposition mA milliampere aberration
cw continuous wave mm millimeter TTL transistor-transistor logic
D digital MPE maximum piezoelectric USB universal serial bus
dB decibel extension UV ultraviolet
dc direct current msec millisecond UVGSFS UV-grade synthetic fused
DIP dual inline package MTF modulation transfer silica
DOF Depth of Field function V volt
DVO diffuse viewing only MTTF mean time to failure Vac volts, alternating current
EFL effective focal length N/A not applicable Vdc volts, direct current
EMI electromagnetic nA nanoampere W watt
interference NA numerical aperture YAG yttrium aluminum garnet
EO electro-optic NAS nonaspheric side ZIF zero insertion force
ESD electrostatic discharge

10 Technical Guide Index

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