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  • Junctions in Practical Devices: Oxide Insulation P - Algaas (Contacting Layer) P-Algaas (Confining Layer)

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    L18

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    electronic properties of material

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    Junctions in Practical Devices: Oxide Insulation P - Algaas (Contacting Layer) P-Algaas (Confining Layer)

    Uploaded by

    parambirla96
    electronic properties of material

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 1

    14-Feb-24

    Junctions in practical devices

    Electrode
    Oxide insulation
    p+-AlGaAs (Contacting layer)
    p-AlGaAs (Confining layer)
    n-AlGaAs
    p-GaAs (Active layer)
    n-AlGaAs (Confining layer)
    n-GaAs (Substrate)

    Schematic illustration of the cross sectional structure of a buried


    heterostructure laser diode.

    114

    I-V characteristics
    𝑝 − 𝑛 diode
    Schottky diode
    ‘Near Ohmic’
    contact
    Ohmic contact

    115

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