POWER ELECTRONICS

Devices, Circuits, and Applications

FOURTH EDITION

CHAPTER
CHAPTER 4
Power Transistors

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Muhammad H. Rashid All rights reserved.
 Table 4.1 Material Properties of Silicon and WBG Semiconductor Materials

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Muhammad H. Rashid All rights reserved.
Figure 4.1 Depletion-type MOSFETs.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.2 Enhancement-type MOSFETs.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.3 Power MOSFETs. (Reproduced with permission from International Rectifier.)

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.4 Cross sections of MOSFETs. [Ref. 10, G. Deboy]

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.5 Transfer characteristics of MOSFETs.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.6 Output characteristics of enhancement-type MOSFET.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.8a–b Parasitic model of enhancement of MOSFETs.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.8c Parasitic model of enhancement of MOSFETs.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.10 Switching waveforms and times.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.15 The linear relationship between blocking voltage and on-resistance. [Ref. 10, G. Deboy]

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.
Figure 4.25 Bipolar transistors.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
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Figure 4.26 NPN-transistors. (Courtesy of Powerex, Inc.)

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
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Figure 4.27 Cross sections of BJTs.

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Figure 4.28 Characteristics of NPN-transistors.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
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Figure 4.29 Transfer characteristics.

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Figure 4.31 Transistor switch.

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Figure 4.33 Switching times of bipolar transistors.

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Figure 4.35 Waveforms of transistor switch.

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Figure 4.40 Symbol and circuit for an IGBT.

IGBT

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Figure 4.41 Typical output and transfer characteristics of IGBTs.

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 Table 4.2 Comparisons of Power Transistors

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 Table 4.3 Operating Quadrants of Transistors with Diodes

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 Table 4.3 (continued) Operating Quadrants of Transistors with
Diodes

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 Table 4.3 (continued) Operating Quadrants of Transistors with
Diodes

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Muhammad H. Rashid All rights reserved.
Figure 4.56 Fast-turn-on gate circuit.

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Figure 4.62 Base current peaking during turn-on.

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 Figure 4.68 Gate voltage between gate and ground.

Sometimes, the source is floating point, and isolation is needed

to for the gating signal, either using pulse transformers or
optocouplers.

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Muhammad H. Rashid All rights reserved.
Figure 4.69 Transformer-isolated gate drive.

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Figure 4.70 Optocoupler gate isolation.

Power Electronics: Devices, Circuits, and Applications, 4e Copyright ©2014 by Pearson Education, Inc.
Muhammad H. Rashid All rights reserved.