Texas A&M University at Qatar Electrical and Computer Engineering Program

ECEN 325

Electronics

Semester: Fall 2023

Section: □ 501 (Monday 2:15 pm )

□ 502 (Tuesday 2:00 pm
□ 503 (Tuesday 8:00 am )
□ 504 (Sunday 2:00 pm )
□ 505 (Sunday 8:00 am )
Experiment #:

□ Lab 1: Network Analysis and Bode plots.

□ Lab 2: Introduction to NI Elvis Environment.
□ Lab 3-I: Operational Amplifiers Part I.
□ Lab 3-II: Operational Amplifiers Part II.
□ Lab 4: Diodes Characteristics and Applications.
□ Lab 5: Characterization of the BJT.
□ Lab 6: Characterization of the MOSFET.
□ Mini project: Designing a Zener Diode Regulator

- Student Names: Reem al-muftah, Maryam al-jundi, Noor Al-Baqali

- Experiment Date: 19 /11 /2023

“On my honor, as an Aggie, I have neither given nor received unauthorized aid on
this academic work”

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Table of Content:
Introduction and objective....................................................................3

Design Methodology ............................................................................3

Design Verification...............................................................................5

Design Implementation.........................................................................9

Results..................................................................................................10

Discussion & Conclusion.....................................................................12

References............................................................................................15

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Introduction:

In this project, the objective is to construct a Zener diode regulator capable of sustaining a
consistent output voltage of 5.6 V under varying load conditions. The circuit design involves the
utilization of a zener diode, a bipolar junction transistor, a silicon diode, and several resistors.

In this laboratory project, two circuit configurations will be implemented. The initial design
incorporates a Zener diode and resistances, while the second design expands upon the first by
introducing a Zener diode, a BJT transistor, and additional components. The output voltage of the
first circuit design changes in response to variations in the system's load value. Conversely, in the
second circuit design, the output voltage varies based on the load, and an increase in load directly
influences the device's voltage. A Zener diode is a specialized type of diode designed to facilitate
the controlled backward flow of current when a specific reverse voltage, known as the Zener
voltage, is attained. These diodes serve as fundamental components in electronic circuits, widely
used for generating low-power stabilized supply rails from higher voltages and providing reference
voltages, especially in stabilized power supplies. Furthermore, Zener diodes play a crucial role in
protecting circuits from overvoltage, particularly electrostatic discharge (ESD). They are adept at
producing a stabilized voltage output with low ripple under varying load current conditions. This
is achieved by passing a small current through the diode from a voltage source, using a suitable
current-limiting resistor (RS), ensuring that the Zener diode conducts enough current to maintain
a voltage drop corresponding to Vout.

Design Methodology:

First circuit:

Initially, the breadboard served as the platform for implementing the two-circuit design. In the
first circuit configuration, the setup involved the utilization of a Zener diode along with two
resistors (a 470 Ω resistor and various load resistors). The circuit was tested multiple times, with
each test featuring a change in the load resistor (ranging from 100 Ω, 220 Ω, 1000Ω, 4700 Ω).
During each test, measurements were taken for both the load voltage and the Zener diode
current, while the source voltage was adjusted to 8V, 10V, and 12V. Subsequently, utilizing
these results, calculations were performed for the load current, source current, and efficiency.

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Second circuit:

In the implementation of the second circuit design, the setup involved the use of a Zener diode, a
BJT transistor, a silicon diode, and two resistors for each test (comprising a 470 Ω resistor and
various load resistors). Throughout the testing process, the load resistor was systematically
altered in each test, ranging from 100 Ω to 4700 Ω. Measurements for both the load voltage and
Zener diode current were recorded in each test, while the source voltage was adjusted to 8V,
10V, and 12V. Subsequently, based on these collected data, calculations were performed for the
load current, source current, and efficiency of the circuit.

Components:

• Wires
• Breadboard
• NI ELVISmx
• Resistors (100 Ω, 220 Ω, 470 Ω ,1000 Ω, and 4700 Ω)
• Zener diode
• BJT transistor
• Silicon diode

Equations:

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Design Verification:

This project focused on creating a Zener diode regulator to sustain a consistent 5.6 V output
voltage, designed to withstand variations in load impedance under changing load currents. In the
initial design, the circuit incorporated a Zener diode in conjunction with a resistor. Conversely, in
the second design, a bipolar junction diode was introduced along with a Zener diode and resistor
to achieve the desired output voltage stability.

Figure 1: circuit 1 of part A

For the first circuit design, a voltage regulator aiming for a constant 5.6V was created by placing
a resistor in parallel with the Zener diode. To construct this voltage regulator, the Zener diode
was connected in a reverse-biased configuration, and a variable load resistance was introduced in
parallel to the Zener diode. The source resistance served the purpose of limiting the current
flowing through the Zener diode until it reached its Zener voltage. In this state, the Zener diode
permitted free current flow to maintain the output voltage. This setup ensured a constant voltage
across the load, unaffected by variations in load current or input voltage. An increase in load
resistance led to a corresponding decrease in load current, thereby maintaining a constant
current.

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 Figure 2: circuit 2 of part B

In the second design, besides incorporating a Zener diode and resistors, an NPN bipolar junction
transistor was utilized. The emitter and collector terminals of the bipolar junction transistor were
linked in series with the load resistor, while the Zener diode played the role of supplying the
reference voltage. Within this circuit, the transistor functioned as a variable resistor, adjusting its
resistance based on the seven operating conditions determined by the current at the base. To
address the voltage, drop encountered at the transistor, an extra silicon diode was introduced.

Simulation: Part A

Figure 3: simulation circuit of part A at RL=100. Figure 4: simulation circuit of part A at RL= 220

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 Figure 5: simulation circuit of part A at RL= 1000 Figure 6: simulation circuit of part A at RL= 4700

Part B:

Figure 7: simulation circuit of part B at RL= 100 Figure 8: simulation circuit of part B at RL= 220

Figure 9: simulation circuit of part B at RL= 1000. Figure 10: simulation circuit of part B at RL= 4700

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Table 1: simulated circuit for part A measurements

Zener Load Efficiency

Load Source
Load, RL Source Voltage Diode Current,
Voltage, Current, IS
(Ohm) VS(V) Current, IZ IL = VL/RL
VL (V) = IL+ IZ (A) 100*VL*IL/(Vs*Is)
(mA) (mA)

100 8 1.404 0.0000037 14.04 14.0400037 17.5499954

100 10 1.754 0.000004 17.54 17.540004 17.539996
100 12 2.105 0.0000043 21.05 21.0500043 17.5416631
220 8 2.551 0.00000652 11.5954 11.5954065 31.8874821
220 10 3.188 0.000087 14.49 14.490087 31.8798086
220 12 3.826 0.0032 17.39 17.3932 31.8774674
1000 8 4.912 1.659 4.912 6.571 45.8981586
1000 10 5.001 5.635 5.001 10.636 23.5144801
1000 12 5.022 9.826 5.022 14.848 14.1548155
4700 8 4.999 5.322 1.0636 6.3856 52.64
4700 10 5.021 9.526 1.0682 10.5942 5.06261181
4700 12 5.034 13.75 1.07 14.82 3.02877868

Table 2: simulated circuit for part B measurements

Zener Load Source Efficiency

Load
Source Voltage Diode Current, IL Current, IS
Load, RL (Ohm) Voltage,
VS(V) Current, = VL/RL = IL+ IZ
VL (V) 100*VL*IL/(Vs*Is)
IZ (mA) (mA) (mA)

100 8 5.647 4.731 56.47 61.201 65.1308986

100 10 5.703 8.87 57.03 65.9 49.3538832
100 12 5.738 13.06 57.38 70.44 38.9511688
220 8 5.65 4.878 25.68 30.558 59.3510701
220 10 5.705 9.018 25.931 34.949 42.3292097
220 12 5.739 13.2 26.08 39.28 31.7534623
1000 8 5.652 4.968 5.656 10.624 37.612613
1000 10 5.708 9.109 5.708 14.817 21.9891098
1000 12 5.739 13.29 5.739 19.029 14.4236521
4700 8 5.652 4.989 1.202 6.191 13.7168955
4700 10 5.708 9.13 1.214 10.344 6.69906419
4700 12 5.74 13.31 1.221 14.531 4.01930356

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Design Implementation:
Table 3: Implemented circuits for part A measurements

Zener Load Source Efficiency

Load
Source Voltage Diode Current, IL Current, IS
Load, RL (Ohm) Voltage,
VS(V) Current, = VL/RL = IL+ IZ
VL (V) 100*VL*IL/(Vs*Is)
IZ (mA) (mA) (mA)
100 8 1.41 0 14.1 14.1 17.625
100 10 1.76 0 17.6 17.6 17.6
100 12 2.12 0 21.2 21.2 17.6666667
220 8 3.86 0 17.54 17.54 48.25
220 10 3.21 0 14.59 14.59 32.1
220 12 3.863 0 17.55 17.55 32.1916667
1000 8 5.46 0.13 54.6 54.73 68.087886
1000 10 5.6 3.94 56 59.94 52.3189857
1000 12 5.627 8.19 56.27 64.46 40.9338207
4700 8 5. 615 3.99 11.97 15.96 52.64
4700 10 5.63 8.23 11.978 20.208 33.3710115
4700 12 5.65 12.5 12.02 24.52 23.0808184

Table 4: Implemented circuits for part B measurements

Zener Efficiency
Source Load Load Source
Load, RL Diode
Voltage Voltage, VL Current, IL = Current, IS =
(Ohm) Current, IZ 100*VL*IL/(Vs*Is)
VS(V) (V) VL/RL (mA) IL+ IZ (mA)
(mA)

100 8 5.55 3.23 55.5 58.73 65.55955219

100 10 5.66 7.44 56.6 64.04 50.02435978

100 12 5.75 11.7 57.5 69.2 39.81514933
220 8 5.62 3.42 25.54 28.96 61.95390193
220 10 5.82 7.36 26.45 33.81 45.53061224
220 12 5.92 11.28 26.9 38.18 34.75816309
1000 8 5.67 3.67 5.67 9.34 43.02582976
1000 10 5.71 7.81 5.57 13.38 23.77032885
1000 12 5.78 12 5.78 17.78 15.65823022
4700 8 5.69 3.72 1.21 4.93 17.456643
4700 10 5.73 7.87 1.219 9.089 7.684970844
4700 12 5.78 12.09 1.229 13.319 4.444540381

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Table 5: Measured values and percentage error of Resistors

Resistor Values (Ω) Measured Values (Ω) % Error

100 98.7 1.30%
220 219.3 0.32%
470 464.5 1.17%
1000 992.8 0.72%

Table 6: percentage error of the measured values for part A

Percentage Error
Load Voltage VL 0.42%
Zener Diode Current, IZ ------------------------------------
Load Current, IL 0.34%
Source Current, IS 0.43%
Efficiency 0.3%

Table 7: percentage error of the measured values for part B

Percentage Error
Load Voltage VL 0.74%
Zener Diode Current, IZ 16.47%
Load Current, IL 0.74%
Source Current, IS 2.21%
Efficiency 1.35%

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Figure 11: Effect of load variation

Figure 12: Effect of source voltage and load variation

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Design Discussion:
Cost:
Table 8: cost

Cost of Design Components

Component Quantity Cost ($)
100 Ω Resistor 1 0.86
220 Ω Resistor 1 0.70
1000 Ω Resistor 1 1.05
470 Ω Resistor 1 0.60
Zener Diode (1N4733A) 1 0.60
Silicon Diode (1N4003) 1 0.65
BJT Transistor 1 5.38

The cost analysis reveals that the first circuit comes at a total of around $ 8, while the second
design amounts to approximately $15. It is worth noting that these total costs exclude the
expense of jumper wires, as their cost is deemed negligible when compared to the overall cost of
the components involved in the circuits.

Discussion:
Two distinct circuits were built and simulated in this project. The first circuit featured a Zener
diode in conjunction with two resistors. The second circuit consisted of a silicon diode, a Zener
diode, two resistors, and a BJT transistor. There is a significant difference between these two
circuits. The primary distinction lies in the load voltage values. Tables 4 and 5 show that the first
circuit, the load voltage initiated at 1.41V, while 5.5V in the second circuit. This will also affect
the other component values, such as 𝐼𝑧, 𝐼𝑙, and 𝐼𝑆, where the first circuit will consistently have
smaller values compared to the second circuit design. This discrepancy is attributed to the
presence of the BJT transistor in circuit 2. The BJT transistor serves to amplify both the voltage
and currents within the circuit.

For the first and the second circuit (refer to Table 1&2), it illustrates that the load voltage
increases with higher resistor values, confirming Ohm's Law. Moreover, lower current passing
through the Zener diode compared to the load and source currents. this is because of the
characteristic of Zener diodes which limit and permit only a small current to flow through the
diode, resulting in 𝐼𝑧 being lower than the other measured currents.

Comparing the simulated and implemented values of 𝑉𝐿, 𝐼𝐿, and 𝐼𝑆, the values are close to each
other, with small percentage error. Nevertheless, the percentage errors for the current flowing
through the zener diode are exceptionally elevated.

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According to the official IEEE website, every member of the organization is required to observe
the highest standards of honesty, responsibility, and ethical conduct in their professional
activities. It emphasizes the fair and respectful treatment of all individuals, discouraging
harassment or discrimination, and advocating for actions that prevent harm to others.
Furthermore, members are encouraged to actively promote and uphold the principles of the code
among their colleagues and co-workers, fostering a culture of ethical behavior and responsibility
within the IEEE community.

Based on a detailed analysis of the circuit, we can confirm that our design complies with the
IEEE Code of Ethics. The circuit designs are extremely simple, using few components that are
both eco-friendly and compact in size. A key strength of the designs lies in the incorporation of a
Zener diode, crucial for voltage regulation within the circuit. This feature ensures stability and
mitigates the risk of abrupt voltage changes, which can lead to various issues. Because both
circuits are quite simple, their combined cost comes to about $12, meaning that the entire
implementation cost should not exceed $26, as shown in Table 14. These designs, which
priorities efficiency, safety, and cost, show a diligent commitment to moral and responsible
engineering practices.

While the designs exhibit merits, there are significant limitations to consider. Notably, the
circuits have a restricted capacity to handle high currents due to the relationship between zener
diode resistance and load power. Increased current results in higher power loss, decreasing the
Zener diode's resistance and compromising current control, especially under high loads.
Additionally, there is a risk of overheating in the circuit, potentially damaging the zener diode.
This heat is linked to excess power loss, highlighting the need to address thermal concerns to
preserve the integrity and functionality of the circuits.

The cost analysis reveals that the first circuit comes at a total of $ 8, while the second design
amounts to $15. It is worth noting that these total costs exclude the expense of jumper wires, as
their cost is deemed negligible when compared to the overall cost of the components involved in
the circuits.

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Figure13: IEEE code

Conclusion:
The goal of this project had been effectively achieved. The major goal was to construct a voltage
regulator circuit using a Zener diode that would keep the load voltage at 5.6 V independent of
variations in the load current. One of the main disadvantages of utilizing Zener diodes as voltage
regulators is that their effectiveness decreases when large loads are applied to them. The source
resistor's power loss is the cause of the low efficiency under these circumstances. Moreover, It
has been approved that this design would maintain an output voltage of around 5.6 V irrespective
of the input current and load resistance.

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References:
Amazon.com: Chanzon 100pcs 1K Ω ohm resistor 1/4w (0.25W) metal film ... (n.d.).
https://www.amazon.com/Resistor-Tolerance-Resistors-Limiting-
Certificated/dp/B08QRVPC8X

EDGELEC 100pcs 470 ohm resistor 1/2w (0.5watt) ±1% tolerance metal film ... (n.d.-b).
https://www.amazon.ca/EDGELEC-Resistor-Tolerance-Multiple-
Resistance/dp/B07QG1V4BH

Transistor 2N3904 bipolar (BJT) NPN general purpose (pack of 50). (n.d.-c).
https://www.amazon.com/Transistor-2N3904-Bipolar-General-Purpose/dp/B007CMFP5E

Fairchild Semiconductor 1N4003 diode, standard, 1A, 200V, do-41 (5 pieces). (n.d.-c).
https://www.amazon.com/FAIRCHILD-SEMICONDUCTOR-1N4003-STANDARD-
pieces/dp/B00MMYLIAI

NTE Electronics EW110 metal film flameproof resistor, 1/8w, 2% ... (n.d.-c).
https://www.amazon.com/NTE-Electronics-EW110-Flameproof-
Tolerance/dp/B007Z84UUG

EDGELEC 100pcs 220 ohm resistor 1/2w (0.5watt) ±1% tolerance metal film fixed resistor,
multiple values of resistance optional. Amazon.sg: Industrial & Scientific. (n.d.).
https://www.amazon.sg/EDGELEC-Resistor-Tolerance-Multiple-
Resistance/dp/B07QK9ZBVZ

Sootra 1W zener diode voltage, pack of (1N4733A 5.1V, 100). Amazon.in: Industrial &
Scientific. (n.d.). https://www.amazon.in/SOOTRA-Zener-Diode-Voltage-
1N4733A/dp/B0BGY8CM8J?th=1

(pack of 100 pieces) Chanzon 1n4003 rectifier diode 1A ... - amazon.com. (n.d.-d).
https://www.amazon.com/100-Pieces-1N4003-Rectifier-Electronic/dp/B079JYZD

IEEE code of Ethics. IEEE. (n.d.). https://www.ieee.org/about/corporate/governance/p7-8.html

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