Date 28 /08/ 2011

4LasenS Saathi)
Intoductbn -
LASER is an
acnonym fd gnt
ughr
Ampliffcaton b sumulated Emissiom of
Radiauon .
Las s a device which
can pmoduce
high ntensity of Hadiauon.
he
basic pruncd ple în Lase s the
phenomenom of stim lated emisslon of
Madiatiom sugaested by Enstein .(1917)
I n 1954 C.H.TOones and his co-wOrtus
Puur thiS piediction of Efnstein t
-

p1ac tical
se

>The finst lasel was developed by

in t e yeaL 1a60
TH.Moiman
1.e Ruby laue Csolld
-
lasa).
AfteL
Afte tha in the yea a61 AU Javan
and ls
assOiategdevloped He- Ne -

la3L
CGas Lase).
I n 1a62 , Hau and his CO-WOorkeis
devel oped semi conduct o Las e

Lasel broughE amazYng changes in_

many aeas Such as medidine, Indus y ,
defeie dgnd CEmmunicauion.
Absprpuign -
An atom in the gnound stalt absolhs
the tn cident
t1adatulan E 2 E - hv) and
goes
goes the exdtrd stalrThis anstton fs
knovn 03 3pontaneons absopton nduced
obspuon

E Page No.
vate Saath)
pgtaneous emissin
The atom in the excited stal
reluirns the Stal
umd by the
emissicn of_1adtatiCh of enesgyE E2 Ej =

h . This
ansiton is known as spmtaneows
emisstn
etastable sta -

he enesqy level oL star

vegy close
t h e eactted eneiqy level and
whose_fe
ime is vesy high is
known meta Stable
stalcT

Pepulati inyegsion
When a mumb es oh atoms in the

excited enigy Level Cm,) ts qreatee than

t h e mumbel u attms in the ground sta

CmDi.e 2 91eateg than m . e n

iS qeat e than m then the pop uulation
invesstom is_sadc 5 be achieved.
Stimulated emsalon2
when the incident_photon inteiac3
the m the .:e\cited stala tht
with at om

aton forced undg0 Ransituion

Dusingthts, we obs ave o

E E
photmsOne s due
the ansi ton cof
the atom from Ez and the o t h i one

Is of emiss ion
is the ncident phottn. This p e
s Cnown stimulated emlssion

PageNo.
 Date.
Saathi

Diffenenceb beuoeen sumuated emissiom

and SpontanceUS emissiom
sumulated Spontaneons
The atom tn the
. The atom in the
excfted stalt is foced ecited
stac reirns
l o relu rn to the
oThe gnound staa
around staT ,they by aS a
1eSult me photon
oo phot on weLe
emitted. is emitted.
2. Highy dire cti onat Less directtomal
3 Highy coheie nt Less Coheienk
HThey ale mono
4 They ae not MoNO
chaomatic
chiomaic.
5 High intense (or) 5. Less Tntenae (oAy
Inisity is very
high Intens ty is veay law,
6 Ex- Sadiur EX Sodtum vapana
Las Lamp melURy vaponi
Lamp
Punpiog
The method (OL) p10ceäS of giving
eneig y a specmen _ig Knon a3_pumpin9
hele ase diLfeAent upe o pumpinq They
ae -

Opuicalpumping
2 ELecical_pumping
Therma_pumpihg_
Chemical pumplng PageNo.
 Date
Saatht

Res onat o
The activee medium kept be luee n 1o07.
Silveked suf ace and sitvesed
paitüaly
susface stn Resonatdi
In ReStYatou the 1adiatim emiucd by
stumulated enmiss icn s s
ubjected to multiple
1eflections

9 Ruby Lasea-E
>Tn consisG of Rub 10d h a i ng 6 cnm L
Ond em D

One o uby 1o is o
fully
slveed Ohile th e oth is paittaUy
sweled
nis Mod dopfed t h o.od. of Ca an
This Ruby od is suw DAnded
by
xenon Flash amp.
Buinciple Tt woKs o the
pmi niplc of
invesion and stimuuatcd eniosion
poplulataub
ConsRucion
coolaw Pubunod XenbM

PaRay

iNae d

too'.
silvucd
HighTeim
Page No.
 Date Saath
h e _diagsam }_a Kuby lasea is
shan
in the above ique T Consisi of
Ruby
od AI,0 mystal Containin g 0.05 1.O
ratoms)
22. he coiaus the Ruby 10d depends
the_CCncenTatian of_the C7 Otoms
The Ruby 10d is. in f oim of yündii-
Cal_910d of abon 10 cm n n Length and
cmin diametex&
y s ends ase potished suchthat the
end faces ale optt Collypas.aue
S One phase is 100 stlvexed and
the oppesilT p spasuauy gilveled
These woo_ siIveaed faces a os a
Res.on.at Di
The 9tuby A0d is
Suanounded by hellcal
Xenon_flagh Lamp. JJt Pnoduc CS hiqh intnsity
of flash of whi Mah I I s Comected ls
the hiah tenslm batt eiu.
T h e s y s t e m iS Cooled by drulattna
the toolantt
Woting -- adund the ruby
rod
E

E
5600A
6 re en
Palue E
H200A
LASERR

Page No.
 Date SaathD\
When the Power sSwitched m1
after feuO SeccmdS Xenon flash lamp

ProduceS hiah intense hiu radiaion

for_+enSeccmds. The chrcmíu ons in
meQrund stat CE) absorbs Green _and
ElLe
radlabcng and qe encind D
and E levels Since the f e tine oF
E2and Ea levels is
very SmalU,he3e
eacitd atoms quicklu-
The 0 6Ey l vel.
Kansiton_from E2EzE Ey i s
mon adioacve anition
thepumping occugeo fagr
nali,-
thenpopulaton inveRsion take3 place belucen_
Ey and E APTT Some bime chnmium
ions_ale de ezcited Relim ta E bO th
the emissi on of_photon
of Wavel eng tn
643 A wni UThese_photans
initau
shmulated emis8 ontrOm tne meta
sBable
star Eyihese
emited photoms 0e subjected|
In multiple
efluction bekoeen the kio
Slvesed susfaces until tne suffiten intensitty
s developed finally ite,mes.q.es u fmom
he halt-siLvezed SWface
Heium Nem hagen -
inciple
Tt works on tne
pinciple of _popukatm
invesclcn and stimulated emssim

Page No.
 Date
Saathi)
ConsiTucumi
ind y rhaG
oe

He+N Laser

M
TYTT
Hodf
Fvtt
HT (Prxr supply) Sustau
SWtace

1 Tt comsislT of a dischas qe_ube of

Length_ 50 Cm and cm in_d ametea.
2.
The ube {s closed witnn o 'Quartz'
windoos
3 The b e i s fiued with a miire oDf
Heu m and Neon gaseB in the rabio oF

4Electrod e3 Oe arange d inthe cbe o

produce a dischaiqe in the gaz and they
aIe_cConmected the powersupply
5 Tlo mîror3 N and 'M LM is Aly
vered and M ig patially svesed )
Oct OS resomators

Workinq 1
E6 ,900a

E-

PageNo.
 Date Saathi)
hen
the poW e suppy S Switched
,eleclcms pHoduccd în the dlschaAqe
Lbe and ae
accelei ated oaAds the
ancde Thesc acceleated
the He at
elccKon
ongeaci
oms, then_the Ne otms The
He atoma
ake edTd o E2 and E3:
These exciltd He at omB
eurn the
qround s t a E by
enerau E the Ne ato ansfesninq their
stall. Therefore Ne în the qr mund
atoMA In theqXund.
Stalr Eexdted D
Eyand E4 As a.
pe3ulE_of this population joveis
created beliseen EyEand ion is
Eg, Es Theae f he
theae Asethreepo8Sble
E Kansåtf onz
Es Lase beam oP waveiength
3, 00 A
2 E E3 Lass beam 6 Waelenqthh
6328 A
3 Fy E3
lasee beam of 2 =,Soo Aa
In ord get only 6328 A° as
Ouu lases beam,the dischaig
be Windmos ase made up
of Quati
thatabsor L 500 A and 33,900 A
rodlaton
Date Caathi)
CharacteristiCS of aLasa
The o ur_importunt chanact erist s
of aLascr are-

They e
highly direcuormal
They are hiahly_monochrama bicc
3.
They ane
of hiah intensity
They aAe highly coherent

Differences betwo eenordinany ght and

Lase beam

Ordinasy gh Laser beom

In Ordimoy uaht|1. Tn Laser bea
beam the angulathe angula spiead
SpLead is more. Lls LesS
2 They ale mot 2 They c highly
directomal direettonal.
3.Ir is Less irtense 3.17 s highly
incte ns3e
4 .T i s not a 4 It S a cohesent
Coheaent beam. beam ighty
e y aAe n0t momg S. hey a e m o
Chromatic Chromatwc.
j6.Ey Sun i9h _6. EXiRuby Lase
mercusy vapo He Ne Lase cO
lamp s odium Vapowx Lase
Lamp

PageNo.
 Saath)
Date /

APPlicatons9f Laser
Of the
The foUoo ing are the s ome
appucar'ons_Of
ndustrial (or) Enginering
Lase
CommunicaU om
. Lasers are nsedfor

PurpoSe
tnick
2. Lasers are used for cutting
sheetS
3tasers axer wsed for tansmitind slanals
from long distances
H.Lasers axe sLd for Weldin9
make in
holes i n
5Lasers OR e 8ed
diomonds and thick metal shee
6 Losers a i e used presence
test t h e of
cracks and plo hole8 i n metals
The foulboing are the someof the
medical applicatton of Lase --
1 Lasers are e d for catatad
2 Sing Laserscancen eatment can
also be done
Lasers are used o desKoy u m a u s
LaSers are `ed for blood LesS SWiqeru.
Defence Appications
1 Lasers are used foi quidmg missi les_
and Satelit8
2. Lasers are us cd o detecting enemy
plan
e.
3. LaSer beom Ye used as
weapons
des o y enemyplanes and tanks
PageNo.
 6

Date
Saathi
Lasel boe ams Can be used lo ind uce

Mucl e ag ugion.
Semi conductor Lase_
Prindpl
The electY OY IY Conducton band
C mein eS witn hole in tn e_valen uy
band and hence the recombinaton of

and holesproduC.e3 energy in

electrmma
the fom of Ugh
CoMstruron
Last

P-Region
P-njunetion

tas

nRe on

1 I t consis of p.n junction diode Made

Amoasingle crystaune matesial Ga As

inwhich p - reqion i s doped with 6e and
reqion _with Te
u14]tol2.
tola The external
mimors are o t required,
Sincethe refractve îndex Of Ga As
is high and itacb as opueal resonat o
The
uPpa and lwel_electrodes in the
Page No. L
 Date
Saatht)
Pand n
Tegtons are
conmected high
tensicm batery
orkina
he n he uncuon is orward
a se d ith appued
an
vTtaq an actve
regiom 1s Pormed near the depleuon
r e g i n At this juncu on ifa radia i on
is made ent on the P- jumcu on
then photbn_is_produced. The emitted photom
mereaueS the rate of recomlainauon of
electrDns nd oles The em itted photoms

haye the ame reauencu ag that of incident

photoms and iu be ampifYed o getE
intensebeam of_ lase