O

0 Y.C W
W .1 0
O M.T
Philips Semiconductors
WW .100Y .C W Product specification
W O M.T
.TW WW .100Y.C M.TW
Phase-locked loopY.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T
DESCRIPTION W .1
.C OM PINW W.1 Y.COM W
CONFIGURATIONS
.C W W
00Y The M .TW is a versatile, Y
.100 frequency
W high guaranteed M.T
W .100 OM
.T
W.1 Y.Cphase-locked
NE/SE564 W
O loop designed forW
W C O
to.50MHz. As shown W Y .C D, N W
1 00 in the M .TW W operation .
up Y
100 of a VCO, M .TW W
W .100 O M.T
Packages
. Block Diagram, the NE/SE564W consists O limiter,
.C
WW 00Yphase .CO comparator,
.TW and post detection WW processor. 00Y
.C .TW WW .100Y V+ 1 M.TW 16 TTL OUTPUT
1 . 1 M O
W .
.CO .TW
M WW 00Y.C O
W W WW 0Y.C 2 M.TW 15 HYSTERESIS SET
WW .100Y W 1 M .T LOOP
0
GAIN CONTROL
.1
OMwith single 5V supply WW.
FEATURES O
W • . C Y .CO .TW INPUT
W WTOW PHASE COMP.C
0 Y 3 W 14 ANALOG OUT
W W
. 100 Y
Operation
M .T W W
W . 10 0
O M W .1
FROM 0 VCO
O M.T
W • TTL-compatible
O inputs and outputs W .C WW LOOP.FILTER Y.4C .TW13 FREQ. SET CAP
WW .100Y.C M.TW W . 1 00Y M .TW W 100 O M
W • Guaranteed O operation to 50MHz WW .CO .TW WWLOOP FILTER 00Y
5 .C
.TW
12 FREQ. SET CAP
WW .100Y.C M.TW W . 1 00Y M . 1 M
W • External O gain control
.Cloop WW 00Y.CO .TW
WINPUT 6
WW .100Y.C M.TWVCO OUT 2
FM/RF O 11
WW •.1Reduced 0 0 Y .T W W .1 M
W W .C OMfeedthrough
carrier
W WW 00Y.CO .TW W WFILTER 07 0Y.CO .10TW
BIAS W V+

W • No 0 0 Y .T W .1 M 1
. 8 M VCO OUT TTL
W.1 elaborate OM needed in FSK applications
filtering
WW 00Y.CO 9 .TW
GND
W .C W WW 00Y.CO .TW W
W • Can.1be Y
00used as a modulator .T W
W.1 Y.COM W
W .C OM W W.1 Y.COM W W 0 VIEW M.T
W • Variable
W Y gain (externally
00loop .TWcontrolled) W W.100 M .T W .10TOP
W W . 1
. C O M W Y.C O
W W W W
0Y .CO .TW SR01025
Y W W 0 .T 0
.100
WAPPLICATIONS
Wspeed OM
.T 0
W.1 Y.COM W W.1 Configuration
Figure 1. Pin
W .CO .TW
M
• W
High Y
modems .C W W W 00 .T generators W 0 0Y
W .100 and transmitters M.T W.1 Y.COM • Signal W.1 Y.COM W
• FSK W . C O W W W W 00 .T
WW .100Y
receivers
M.T
W W .100 •M .T satcom/TV systems
Various
W.1 Y.COM W
• FrequencyW O W .C O W
WW .100Y.C M.TW WW .100Y • pin
Synthesizers
.TW
Mconfiguration
W
W .100 O M.T
W O W O W .C
WW .INFORMATION 00Y
.C .TW WW .100Y.C M.TW W .100
Y
M.T
W
ORDERING 1 M W O W C O
W
WW .100Y.C DESCRIPTION
O
.TW WW .100Y.CTEMPERATURE .TW RANGE W ORDER
W
. 0Y.
10CODE M .TW
O M W O M W O DWG #
.C SOT109-1
16-Pin W WW
Plastic Small Outline
0 Y.C(SO) Package.T W WW .100Y.C M .
0 to W
T+70°C WW NE564D .1 00Y M.T
W
. 1 0 M W O W C O
W In-LineYPackage.CO (DIP) WW .100Y.C 0M .TW WWNE564N Y. SOT38-4 .TW
100
16-Pin Plastic Dual to +70°C
WW In-Line .1 00 PackageM .TW W . O M
W O
O WW .100Y.C M.TW
16-Pin Plastic Dual W (DIP) -55 to +125°C SE564N SOT38-4
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
Y W
W
W .100 OM
.T W.1 Y.COM W W W.1 Y.COM W
.C W
BLOCK DIAGRAM W W
.1 00Y M .TW W
W . 100 O M .T W
W .100 O M.T
W O W .C
WW .100Y.C M.TW WW V+ .100Y.C M.TW W .100
Y
M.T
W
W O W C O
W
WW .100Y.C M.4TW 5
O
WW 1 .100Y.C M.T 14W WW .100Y. M .TW
W O
W Y.C
O WW 00Y.CO .TW WW .100Y.C M.TW
WW LIMITER 0 0 .T
PHASE W 2 W . 1 M O
W.1 M
OCOMPARATOR W
0Y.C M.TW
O W
WW .100Y.C M.TW
WW .10DC
6
WW .100Y.C M.TW
W O 3 WW RETRIEVER .CO .TW WW 00Y.CO .TW
WW .7100Y.C M11.TW W .1 0 0 Y W
W.1 Y.COM W
W C O
AMPLIFIER
W W .C OMTRIGGER
SCHMITT
W
WW .1090Y. W Y W W 00 .T
W .100 M.T
16

W O M.T W .C O W W.1 Y.COM

W DETECTION
WW .11000Y.C VCOM.TW WPOST .
PROCESSOR100
Y
M TW
.15 W
W .100 O M.T
O W O .C
W
WW .100Y .C .TW WW .100Y.C M.TW WW .100Y .T
W 12
O M
13 8
W C O W W .C OM
WW .100Y . Y
WW .100Y.C M.TW M.T
W W
W .100 OM
W C O W W .C O WSR01026
Y .C
WW .100Y Figure . W W 0 Y W W 0 0
W O M.T2. Block Diagram WW.10 O M.T W W.1
. C
WW .100Y.C M.TW W .100
Y
M.T
W W
W O W C O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
WW .100Y.C M.TW WW .100Y.C
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O1 853-0908 13720
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T
ABSOLUTE MAXIMUM W .1
RATINGS .C OM W W.1 Y.COM W
.C W .TW
00Y .TW W .100
Y
M
W .100 OM RATING
.T
W.1 Y.COMSYMBOL W
0Y. C O W W
00Y
.C
.TW
WW
PARAMETER UNITS
0 0 .T W . 1 0 M .TW W . 1 O M
. 1 M V+ Supply voltageW O W
WW 00Y.CO .TW WW Pin 1
0 0 Y.C .T W WW .100Y.C M.T14W V
. 1 M Pin 10 . 1 O M W O 6 V
W O WW .C (Pin 11).TW W Y.C W
WW .100Y.C IOUT M. T W Sink MaxW (Pin 9) and 0 0 Y
sourcing W .1 0 0 M .T
11 mA
W .C OIBIAS Bias current W
W.1 Y.COM W WW 00Y.CO 1.TW
W Y W W adjust pin (sinking)
0 0 .T W .1
mA
W . 100 M .T W . 1 O M W O M
OD WW .100Y.C M.TW
W P Power dissipation 600 mW
WW temperature .C
WW .100Y.C M.TW Operating ambient . 1 00Y M .TW
W W .C TO W NE W
W Y .CO .TW W WW 00Y.C0Oto +70.TW °C
W 00 Y A
.T W . 1 0 0 M .1 M
. 1 M W O W C O
. to +125 .TW °C
W
WW .100YT.STG CO T W
SE
W W 0 0 Y.C .T W WW .100Y-55
. range.1 M M °C
OM Storage temperatureW WW 00Y.CO .TW
-65 to +150
W W Y .C W W
W
0 Y .CO .TW W
W NOTE: 0
.10 aboveO5VMwill .T .1 0 M . 1 M
W W
Operation
.C require heatsinking ofW
W
theW case.
Y .CO .TW W WW 00Y.CO .TW
Y W 0
W
DCWAND .100 AC ELECTRICAL
OM
.T
CHARACTERISTICS
0
W.1 Y.COM W W W.1 Y.COM W
.C W
W
W VCC = .5V; 1 0T0AY= 0 to 25M °C;.T
W W
fO = 5MHz, I2 = 400µA; unless W . 00
1otherwise M .T
specified.
O
W
W .100 O M.T
W O W .C
WW .100Y.C M.TW WW .100Y.C M.TW LIMITSW .
Y
100 LIMITSOM.T
W
W O W .C O W W Y.C
WW .100Y.C M.TW
SYMBOL PARAMETER
WW TEST CONDITIONS
1 00Y M .TW SE564 W W.100NE564 M .TWUNITS
W . O O
W .CO frequency WWC1 = 0.1(stray) 0Y.C M.T50W 65 W
MIN TYP MAX W MIN 00TYP Y.C MAX .TW
WW .1Maximum 00Y VCO .T W 0 45 .1 60 M MHz
W W . C OM
W W W Y .C O
W W WW 00Y.CO .TW
Y WInput > 200mV 0 .T
W .100 M.T °C0
W.1 70 Y.COM W
RMS
TA =W 25.1 OM 40 70 40
W .C O W ° .C W W
WW Lock . 1 0Y
0range M .TW WA T =
TA = -55
125
W °.C100
C Y
O M
20.T 80 30 W
W .100 O M%.Tof fO
W O 50
WW .70 Y.C
WW .100Y.C M.TW W TAW = 0 oC
°C .10
0Y.C M.TW 100 M .TW
TA = 70W O W O
W20W 30.100Y.C %Mof.T
40
W O
WWCapture 0 0 Y.C
range .T W Input > 200mV WWRMS, R.21=027Ω 0Y.C 20M.TW 30 fO
W
. 1 M W O W C O
W O
WW .1°C00Y.C M.500
W Y. .TW
WW .100Y.C M.TW TW 1500 W 100
fO = 5MHz,
TA = -55°C to +125 O W . O M
WWfrequency .CO
Ydrift with .TW
TA = 0 to +70
W W°°CW 00Y.C .TW WW .100Y.C M .TW
WVCO . 1 0 0 M = 0 to +70 C . 1 M 600W PPM/O oC
O W O .C
W
temperature
WW .100Y.C M.TW TA =O-55°CWto +125°C.100Y
f = 5MHz, W .C 300.TW800 WW .100Y M .TW
W O M 500 W O
W
WW .100Y.C M.TW A
O T = 0 to +70°CW
W 00Y
.C .TW WW .100Y.C M.TW
.1 M
W W
VCO free-running .C
frequency O C1 = 91pF
W W 4Y.C 5
O
W
6 3.5 W
W
5 W 6.5 0Y .CO .TW
MHz
W 00 Y .T C W R = 100Ω W
“Internal”
10 0 .T .1 0
W.1change OM V = 4.5V to 5.5VWW. C OM WW8 0%0Y .C OM
VCO frequency
W
Wvoltage .100Y . C
with
.T CCW W 1 00 Y . 3
M .T8 W W
3
.1 of fO M .TW
supply
M . W O
W O WW 00Y.CO .TW WW .100Y.C M.TW
WW .100Y.C Modulation . T W frequency:W 1kHz
. 1 M W O
W OM fO = 5MHz, input deviation: W
2%T = 25°C WW .CO .TW WW mV 0Y.C M.TW
WW .100Y.C M.TW 16 0Y28
1 0 14 OM
28 . 1 0
RMS
W voltage O 1%T = 25 C °
W8. WmVRMS Y.CO
WW .100Y.C M.T1%T
Demodulated output
1%TW = 0°C° WW .100Y.C M.TW 16
14
13
WW mV.1RMS 00 M.T
W
W O = -55 C W6 10 O 8
W W mVRMS .C O
WW .100Y.C M1%T .TW== 125 70°C
°C
WW .100Y.C M.TW 15 W mVRMS .100
Y
M.T
W
12W O W O
WW % .100Y.C M.T
1%T 16 mV
W O
WW .101 0Y.C M.TW 1
RMS
Distortion WW .100Y.C Deviation: .T W 1% to 8%
W O
S/N Signal-to-noise ratio W W Std. .C OM 1% to 10% dev. WW 40 Y.CO
condition, W 40 W WdB 0 Y.C .T
Y W W 10 0 .T .1 0
AM rejection
W
W .100 Std. O M.T 30% AM
condition,
W W .35
.C O M 35 WdBW
Y .C OM
WW .100Modulation Y.C frequency: .TW 1kHz W W.100Y OM.TW W .100
W O M C W W .C OM
Demodulated output atW oper- fO = 5MHz, .C input deviation: 1% W Y . W WmV 0 Y
Y .TW W 12 .100 7 M.T12 0
RMS
ating voltage W .100 VVCC = 4.5V
M 7 mVRMS W.1
W O W W .C O W
WW .100YV.CCC= 5VMI ,.T W
= 5.5V 8 14 8 14
W W
45W.1 60
00Y M.T
W
ICC Supply current W CC O 1 I10
C W .C O 45 60 mA
W W 0 Y . .T W W 0 0 Y .T W
W.1VOUT Y
0 M16, .1 M
Output
“1” output leakage current W C
= .5V, O Pins 9
W W
1WW 20
0 Y .CO 1 20 µA
W IOUT
. 1 00= 2mA, PinsM16, .T9 0.3 0.6
. 1 0 0.3 0.6 V
0.4WW
“0” output voltage
W WIOUT = 6mA, .C O 16, 9
Pins 0.8 0.4 0.8 V
W 0 0 Y .T W W
W. 1 OM
WW .100Y.C M.TW
1994 Aug 31 W O2
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T PERFORMANCE
TYPICAL W 1
.CHARACTERISTICS
.C OM W W.1 Y.COM W
.C W W
00Y .TW W .100
Y
M.T
W .100 OM
.T
W.1 Y.COM W W .C O W W Y .C W
00 .T WW Lock.1Range 00Y vs Signal M TW
.Input W .100 M.T
. 1 M W O W .C O
WW 00Y.CO .TW .C WW .100Y
1000
8 W
W
1 00Y M .TW M .TW
. 1 M W . O W O
W O
WW .1IPIN .C WW Y.C .TW
WW .100Y.C M.TW 002Y= 400 A M.TW 100 vs Frequency
6
µ
.
VCO Capacitor
W O M
W O W
WW .I100=Y0µA .CO .TW WW .100Y.C M.TW
WW .100Y.C M.TW
4 106

O W PIN 2 O M W .CO .TW

W 105 WW
WW .100Y.C M.TW 2 WW .100Y.C M.TW 00Y
INPUT SIGNAL LEVEL – mV

W . 1 OM
W C O W W .C O W Y.C W
WW .100Y . .TW Y W W 0 M.T

CAPACITANCE pF
.10
4
M
W
W . 100 O M .T 10
W C O
W
WW .100Y.C M.TW100
O
WW .100Y.C M.TW 103 WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW6
O 8
WW .100Y.C M.TW 102 WW .100Y.C M.TW
W O
W O WW 00Y.CO .TW WW .100Y.C M.TW
WW .100Y.C M.TW W 1
W. OM 10
W O
WW .100Y.C M.TW
4
W O
WW .100Y.C M.TW WW .100Y.C M.TW1
W W .C O WW V0CC0Y 5V.C
O
W 10WW
W
102 103 0 Y
4 .C10O5
.TW
W 00 Y .T
2 W W . 1 M .T .1 1
. 1 010
M
. 1 M W fo = 5MHz
O W O
O WW .100Y.C M.TW
FREQUENCY kHz
W
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O 10
W W W Y .CO .TW W WW 00Y.CO .TW
W 00 Y .T W 0 0 .1 M
W.1 Y.COM W
0.7 0.8 0.9 1.0 1.1 1.2 1.3

W W.1 Y.COM W W W WW 00Y.CO .TW

W .100 M.T
NORMALIZED LOCK RANGE
W 00 .T W.1 Y.COM W
W .C O W W.1 Y.COM W W
WW .100Y M .TW W
W .100 O M .T W
W .100 O M.T
W .CO VCO WWTypical.1Noirmalized .C
WWFrequency 00Yas a Function
Typical Noirmalized
.Tof W WW Typical . 1 0Y.C M
0Noirmalized .TW
VCO 00Y VCO
M .TW
. 1 M CO W O
WWPin 2 0Bias Y.C
O Frequency as a Function of Frequency as a Function of
W .Current W Temperature W
WW Pin.120Bias 0Y.C Current TW
M . W . 1 0 Y
M .T W W
W .1 0 0
O M.T
W O C
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O
NORMALIZED VCO FREQUENCY

O
NORMALIZED VCO FREQUENCY

W
W O .C 50MHz.TW WW .100Y.C M.TW
NORMALIZED VCO FREQUENCY

WW .100Y.C M.TW WW VCO.1FREQUENCY:

1.10
00Y M
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W FREQUENCY: Y
00 50MHz .T 1.05 W .1 M
1.01
W.1 Y.COM W W W.1 Y.COM W1.10 FREQUENCY: W
BIAS CURRENT: — W200µA
0Y .CO .TW
W W 00 .T W 5MHz
0
1.00 W
W .100 O M.T 1.00 W.1 Y.COM 1.05 W W.1 Y.COM W
.C W W W 00 .T
0.99
WW .100Y M.T 0.95
W W .100 M.T1.00 W.1 Y.COM W
W O W W . C O W
WW .100Y.C M.TW
0.98
Y W W 500MHz .100 M.T
0.97
W O
W
W .100 O M.T 0.95 FREQUENCY:
BIAS CURRENT:W
W — 200µA
.C O
WW .100Y. C Y W
WW .100Y.C M.TW .TW W .100 M.T
0.90
0.90
0.96
W O M W .C O
–600µA –400 W–200
WW 0 00Y .CO .TW WW 0 .10+200 0Y.C+400 M–50 .TW W W 00Y
75.1 100 125 M .TW
. 1 +200
M –600µA –400 –200 –25 25 0 25 50
W O
W O
WW
W .CO .TW TEMPERATURE WW(IN C) .100Y.C M.TW
WW(µA), PIN.1200Y.C M.TW BIAS CURENT
BIAS CURENT (µA), PIN 2
. 1 00Y M
o
O
W W .C O
W WW 00Y.CO .TW W WW SR01027 0 0 Y.C .TW
W 00 Y .T W . 1 M . 1 M
. 1 M W O W O
W
WW .100Y.C M.TW
Figure O 3. Typical Performance W
W Characteristics 00Y
.C .TW WW .100Y.C M.T
.1 M
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .T
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM
.C W
WW .100Y M .TW W
W . 100 O M .T W
W .100
W O WW
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
WW .100Y.C M.TW WW .100Y.C
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O3
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T PERFORMANCE
TYPICAL W 1
.CHARACTERISTICS
. C OM (Continued) W W.1 Y.COM W
.C W W
00Y .TW W .100
Y
M.T
W .100 OM
.T
W.1 Y.COM VD – PHASE COMPARATOR’S WW
Y. C O W W Y . C W
1 00 .TW
OUTPUT
M VOLTAGE IN mV W
. 100 M .TW W
W .100 O M.T
. W O .C
WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y M .TW
. 1 M W O W O
W O
WW .100Y.C M.TW WW .100Y.C M.TW
800

WW .100Y.C M.TW O
W .C O WW I 00Y .CO IBIAS W= 200µA
W WW 00YVCO CFREQUENCY
IN.MHz W
W W
. 100 Y 600
M .T W W
W . 1BIAS = 400µA
O M . T
W .1 1.6 OM.TI
W
WW .100Y.C M.TW
O
WW IBIAS = 800µA 0Y
0
.C IBIAS = 0µA
.TW WW .100Y.C M.BIAS TW= 800 A
µ

. 1 M W O
WW 00Y.CO .TW Y.C
I
W W .C O W W 0 .T
µ
WBIAS = 00 A
W 00 Y 400
.T W W .1 0 M
W.1 Y.COM W
1.4

W W.1 Y.COM W W
fo = 1.0MHz W
W W 0 Y .CO .TW
W 00 .T W 0 0 .T .1 0 M
W.1 Y.200 C OM W W.1 Y.COM W W W1.2
0 Y .CO .TW
W W W 0
W
W .100 O M.T
W
W .100 OM
.T
W W.1 Y.COM W
C W .C W
WW .100Y. M .TW W .100
Y
M.T
W
0 W.1
00
O M.T
W O W . C O W .C
Y400 600.TW800 V IN mV
WW .100Y.C M.TW
40 60 100
WW120 .1140 00Y 160 M.TW
–400 –200 W
.100
200

W O W C O W W .C OM D

.C W 0 –
.
Y INPHASE
W W .8 00 Y .TW
WW .1–200 00Y M.T
W W .100DEGREESOM.T
ERROR
W.1 Y.COM W
W O W .C W
WW .100Y.C M.TW WW .100Y M .TW W .100 M.T
O W O W .C O
W–400 WW .100Y
.6
WW .100Y.C M.TW WW .100Y.C M.TW M.T
W
W O W O
W
WW –600.100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 0 .T W
W –800 .100
W OM
.T 0
W.1 Y.COM W W W.1 Y.COM W
W .C W W 00a FunctionMof.T
W . 1 0Y of the
0Variation M TW
.Comparator’s W Voltage
Output . 100 O M .T VCO Output Frequency W .1as O)
W O Error and Bias Current (K W .C Input Voltage W .C(K
W W 00 Y C
vs .Phase
.T W W WD)
1 0 0 Y
M .T W W and Bias Current
. 1 0 0Y O
M .TW
. 1 M . O W O SR01028
W O WW 00Characteristics
Y.C WW .100Y.C M.TW
WW .100Y.C M.TFigure W 4. TypicalWPerformance . 1 M
W
.T(cont.)
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
TEST CIRCUIT
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T +5V W.1 Y.COM W W W.1 Y.COM W
.C W W 00 .T
WW .100Y M.T
W W .100 M.T W.1 Y.COM W
W O W W .C O W
WW .100Y.C M.TW W R3
.100
Y1K
M.T
W W
W .100 OM
.T
W O W CO W .C W
WW .100Y.C M.TW
R1
WW .100Y. M .TWVCO W .100
Y
M.T
W O W C O
W
WW .10INPUT
O
0Y.CC3 M.TW 1 2 W10 16 .1900Y pF M390
W .C
15
.TW
OUYPUT
WW .100Y. M .TW
W O W O
W
WW .100Y.C0.1µF M1K
O
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6
WW .13 00Y.C MDEMODULATED .TW WW .100Y.C M.TW
W W .C O
W WW14 00Y.CO OUTPUT W W WW 00Y.CO .TW
Y 7 W .T
W 00
W.1 C2Y.COM
.T 564 W.1 0.1µF .C OM W W.1 Y.COM
R2
W W
W W
.1 00 430pF M.TW 4 W 13 .100
W
Y
O M .T W
W .100 O M.T
W O WW .100Y .C
.C R2 .T5 W WW12 .100Y.C M.TW
C1
WW .1C2 00Y .T
W O M W C O W W .C OM
WW .100Y . Y
WW .100Y.C M.TW W .100
8
430pF W
W O W O M.T W W .C OM
.C W Y .C W W 0 Y
WW .100Y M.T
W W .100 M.T W.1
0
W O W W .C O W
SR01029
WW .100Y.C Figure W
M.T5. Test Circuit
W .100
Y
M.T
W W
W O W C O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
WW .100Y.C M.TW WW .100Y.C
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O4
WW .100Y.C
 O
0 Y.C W
W . 1 0
O M.T
WW .100Y . C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 1
O M.T
FUNCTIONAL DESCRIPTION W W .1
.C OM W
Phase W.Comparator Y .CO Section
M
W
Y.C W W 0 0 Y . T W W 1 0 0 .Tconsists
. 1 00 M .T W . 1 O M The phase W .detection O M
processor
.C amplifier.TtoW
of a doubled-balanced
W .C O
(Figure 6)W W Y .C W W W with0a0limiter
modulator Y improve AM rejection.
. 1 00Y The NE564 M
W
.Tis a monolithic phase-locked . 00 with a post
1loop M .T
detection W .1 verticalOPNPs M are used to obtain TTL level inputs.
W O Schottky-clamped
.C
WW 00Yprocessor. .CO .The TWuseextends of Schottky W
Wclamped 0Y.C and M
transistors
0operation .TW
optimized The Wloop W gain can00beYvaried by changing
. 1 M .TW the current in Q4 and Q15
. 1 M . 1 O W O
W device O geometries
.C50MHz.
the
WW 00Y.C
frequency of to greater
W
which
W
effectively
W changes
0 Y .C the gain of the differential amplifiers. This
TaW
WW .100Y than
M .T W W . 1 M .T can be accomplished
W .1 0 by introducing
O M . current at Pin 2.
W O W the NE564 C O be used W . C
WW .100asYa modulator
In .C
addition to the
.T W
classical PLL W
applications,
W 100
Y . can
M .T W PostW Detection 0 Y
.10Processor .TW
MSection
M W . O W O
W .CO .TW
with a controllable frequency
WW
deviation.
0Y.C TW The postW W processor
detection Y.Cconsists .ofTaW unity gain
WW .1The 00Youtput ofM the PLL can be written as shown.1 in0the followingM. transconductance W . 100 and comparator.
amplifier O M The amplifier can be
W W equation: Y .C O
W W WW 00Y.CO .TW used as aW DCW retriever for
1 0 0 Y.C
demodulation .T
of W signals, and as a
FSK
W 00 .T W.1 Y.COM W post detection filter for. linear FM.C OM
W W.1V = (fYIN.C O) M
- fO
W W 0 W WW 0 0 Y
demodulation.
jitter in.T theW
The comparator has
W O 00 .T W .1 0 (1)
M .T adjustable hysteresis so
.1that phase
M output signal can be
W.1 Y
KVCO M W O
W . C O
W W WW 00Y.CO .TWeliminated. WW 1 0 0 Y.C .TW
W KVCO . 1 0
0= conversionM .Tof the VCO
gain . 1 M W . schematic,O MDC
W O W C O As shown in the equivalent
W amplifier00QY.- Q together C the retriever is formed by
W Y . C W W W 0 0 Y . .T W
the transconductance W 1 .TWwith an external
1 00 of theM
W fIN = .frequency .T signal
input
W . 1 O M W . 42 43
O M
W O
Y.Cfrequency Wthe VCO WW .100Y.C M.T
capacitor which is connected
W an integrator WwhoseW Y.C is shown
at the amplifier
00voltage
output (Pin 14). This
.TW
WW fO = free-running
. 1 0 0 M .T of forms
W .1
output
O M in the following
W O W C O W . C
WtheW
The process of . C
recovering
00Yinto logicM
FSK signals
.TW signals. For
involves W
the conversion
W high data.1rates, 00Ya
of.
M
equation:
.TW W . 100
Y
M .TW
. 1
PLL output
O compatible W O g W .C O
WW 0amount Y.Cof carrier.Twill Wbe present atW theW 0Y.C M VO = WM VINdt WW 00Y .TW (3)
Wconsiderable
0 output of the
. 1 0 .T C2 . 1 O M
PLL dueW 1
to. the wideband M of the loop filter. To W
Onature avoidWthe use Y.CO W W .C
Y.Ca comparator W W 00Y W
of W
Wcomplicated . 1 0 0
filters,
M .T Wwith hysteresisWor Schmitt.1trigger
W
0 0
O
gM =.T
M transconductance of the amplifier
W .1 O M.T
is required. WWith theYconversion.CO .gain of the VCO fixed,W the output .C = capacitor WW (Pin 14) 00Y
.C .TW
WWas given
voltage 1 0by0Equation 1Mvaries TWaccording to the W frequency . 1 00Y C2 M .TW at the output W . 1 O M
. W it Y.CVOIN = signalW
deviation ofW
WW INthat.1the Y C this
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W W system,
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is necessary 00hysteresis Mof .T
the Schmitt trigger be capable . 1
of M
O proper selection of C2, the W W timeYconstant .CO can.TbeW
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itYcan be optimized W for a particular W WW 00Y.C
system.
With
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W 0 . T
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varied so
M that the output voltage is the DC. or M of the
value
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W W .C Y .C
input Osignal for Wuse in FSK, or W as aW
W
post detection 0 Y COin linearTW
.filter
Wof the SchmittW 0 .
W in a change
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W .100
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W .100 demodulation. O M.T W W.1 Y.COM W
C
Y. factor to be.Tconsidered W . C W
WW an important
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W
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is theW drift in
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Y comparator
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W 10Q049 - Q50 with OM is
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the free-running frequency
W O C O W . C W
temperature, W
Waccording Y.C 1 it will.T
to Equation Wto a change W
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.10varied
feedback being
W provided
M.T the current in Q52 with
by Q
W 47 a 48 - Q . The Y hysteresis
.100 variation Min.T
.100and consequently
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.C O the
WWof hysteresis
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.C WW .1loop .TWprovides Y control, .TW
output signal.W ThisWis especially
. 1 00Ytrue for narrowband
M .TW signals where 00Y gain
M
This method
W .100around OM
Wmay be less O the change in fO due to WW nominal which is a
C DCO control, symmetric
W variation
.Cthe
the deviation in fIN itself
W
W effect can 0 0 Y . Cthan
.T W W 1 0 0 Y .value.
M . T W W . 1 0 0 Y
M .TW
temperature. This 1 be
W. and Y
eliminated Mif the DC or average . W O
value of the signal isW retrieved .CO
used as the reference W to the WW Design
W
0 CO
Y.Formula T W WW .100Y.C M.TW
W 0 0 .T .1 0 M . O
comparator. In this manner, variations
theW
W.1
FSK output.0Y.C
in theM
O DC levels of the PLL WW
W
The free-running
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O
Y.C frequency Wof the VCO isW WW
shown
0Y.C M.TW
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0
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0 . T W .1
equation: 0 M .T .1
VCO Section WW
W.1 Y.COM W WW 00Y1.CO .TW W WW 00Y.CO .TW
W
Due to its inherent high-frequency W
00
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an emitter-coupled
fO ≅ .1
W 22 RC (C1.C +COSM ) W W.1 Y.(4) CO
M
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W
VCO. In the circuit, Y
00 shownM
.C W
T equivalent
in .the W W
1 0 0 Y
M .T W W . 1 0 0 M .TW
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WW .COsources WW .100Y.C M.TW
100Ω
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Q23 with current
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Q25 - Q26
1 WW 00Y.CO .TW
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W W. equation: . C OM C 1
WW 00Y.CO .TW
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W
the oscillator is shown in the following Y W W
W
W .100 OM
.T W.1 Y.COM W
CS = stray capacitance
W W.1 Y.COM
1 . C W
fO ≅
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W
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O
T W
by the following equation:
W .100 O M.T
W O W1 .C WW .1(5)00Y .C
RC = R19 = R20 = 100Ω (INTERNAL) WW .100Y.C M.TW fS =W . 1 00YOrder) M.TW
(First
W OM
.T
W O 1 + sRC W 3
.C O W Y .C
WW .100Y.C M.TW WW .100Y M.T
W W .100
C1 = external frequency setting capacitor
W O R = R12 = R13W = 1.3kΩ (Internal)*
C O W W .C OM
.C W Y . W W 0 Y
CS = stray capacitance
WW .100Y M.T
W By adding W capacitors .10to0Pins 4 and M T
5, .a pole is added to the loopW.1
0
W O W W .C O W
Variation of VD (phase detector output voltage)
WWby Equation
changes
Y.C the
W transfer atW .100
Y
M.T
W W
frequency of the oscillator. As indicated
W .100 2, the OM.T W C O
frequency of the oscillator has a negativeW .C .TW ω = RCW
1 W Y. Figure.T6.W
NOTE:
W temperature 00aYcurrent IM 100*Refer toO
coefficient
due to the monolithic resistor. To compensateW for.1 this, O 3
W . M
W to 0achieve Y .C R
W W W 0 Y .C
with negative temperature coefficient is W introduced 0 a low .T 0
frequency drift with temperature. W.1 Y.COM W W W.1
W W
W
W .100 O M.T
WW .100Y. C
M .TW
1994 Aug 31 W O 5
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T
EQUIVALENT SCHEMATIC W .1
.C OM W W.1 Y.COM W
.C W W
00Y .TW W .100
Y
M.T
W .100 OM
.T
W.1 Y.COM W W W Y. C O
W W W Y .C W
1 00 .T  W
. 100 M .T  
 
 W
.100 O M.T

 
. M W O W .C
WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y .TW


M
















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W 00 .T W.1 Y.C OM .1 M
W W.1  Y.COM W W W W WW 00Y.CO .TW
W
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  W
W .100 OM
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W W.1 Y.CO M
W Y . C W W W 0 Y .C T W W 0 0
SR01030
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W . 1 00 M .T Figure 6. Equivalent . 1 0Schematic M. W .1 O M
W O
W
WW .100Y.C M.TW
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WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WLOCKW Y .CO .
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W 00 Y .T W 0
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W.1 Y.COM W W
I W.1 Y.COM W WW 00Y.CO .TW
W W 00
2
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W 00 .T 0.01µF
W.1 Y.COM W M
W W.1 Y.COM W W W WW 00Y.CO .TW
W .100 M.T
W 00 FILTER M.T
.1LOOP W.1 Y.COM W
W C O W W 0.01µF
. C O W
WW FM 0Y. 0.47µF W Y W W .100 .T
W .10INPUT O M.T 6 16 2 11 4 W
W
W .100 O M.T W W .C OM
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WW fO =.15MHz 00Y M .TW
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W .100 OM.T
W O .C
WW fM = 1kHz
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WW .100Y1kHz
15 .C OUT .TW
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WW .100Y .TW
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564
WBIAS . 1 M W O M
W O
WW .100Y.C M.T
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W O 14 POST
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WW .100Y.C M1.TW WW 0.1µF
.1 00Y M .TW
W W .C O 8 W
13
WW 00Y.CO .TW W WW 00Y.CO .T
W 00 Y .T
10 9 12
W .1 M
W.1 Y.COM W 80pF
W W.1 Y.COM W WW 00Y.CO
W W 00 .T W
W
W .100 O M.T fO = 5MHz W.1 Y.COM W W W.1 Y.COM
.C W
WW .100Y M .TW FREQUENCYW SET CAP.100
W O M .T W
W .100
W O WW
WW .100Y.C M.TW1k WW .100Y.C M.TW
W O
WW .100Y5V
W .CO .T5VW WW .100Y.C M.TW
W OM W O SR01031

WW .10Figure 0Y.C 7. FM .T W
Demodulator at 5V WW .100Y.C
W OM W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O6
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T
APPLICATIONS W .1
.C OM W W.1 Y.COM W
.C W 00Y .TW W 100 .T 5V

. 1 00Y M .TW W . 1 M W . O M
W Y.CFM
O Demodulator
W be used asW WW 00Y.CO .TW WW .100Y.C MI.TW 2 FINE FREQUENCY

. 1 00 The M
NE564 .T can an FM . 1
demodulator. The M
connections W O
ADJUSTMENT

W C O W W . C O W Y .C 2k W
W . operation
Yfor W5V and 12V are
at Wshown in.1Figures 0Y 7 and 8,M.TW W 00 .T
.100 respectively. M.TThe input signal is ACWcoupled 0with W.1 Y.COM W
MODULATING

W O W . C O
the output signal INPUT
1kHz W
WW .100Y .C extracted TW Y by the .TW W 00 2 11 M4.T
being at Pin 14. LoopW
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. M 0.47µF W.1 16
W W capacitors
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Y .C O
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W 1kHz WW 6 0Y
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W Y W
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W . W Y W W
W
W
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Wbe .101%0 or higher. OM
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W W3 .1 Y.COM
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W
WW .Modulation 1 0 0 Y
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W . 1 0 0
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W O M.T
W NE564 O W at either .C loop .TW WW 8 .11000Y9 . 12 13 M.TW C
WW The 0Y.C
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Y W 0 .T
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W Y . W W 0 Y
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W will be.1appropriate .T injected into Pins 4 and
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M W
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W 9.
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WW .100Y.C M.TW 5V WW 1k.100Y.C M.TW
WW 00MODULATED O
W W Y .C O
W W WW 00Y.CO .TW W 1
Y.C OUTPUT .TW
W . 1 00 M .T W . 1 O M W 5V. O
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W W W SR01033
WW .100Y.C M.TW
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WW .100Y.C M.TW WFigure 0 0 .T

0.01µF
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W W Y . C O
W W
W
WFILTER 0 Y .CO The .lock T W W that.1the +1.0MHz frequency
W
W .100 O M.T
LOOP
0.01µF W .10 O M range graph indicates
W W .CO
M
W .C W W Y . C deviations
W will be within the
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.(While
FMWINPUT .100Y 0.47µF 16
M
2
.T 11 4 W . 1 00 thanM .T
approximately 50mV with zero W . 102 bias current.
Pin O M
fO = 5MHz W 6 O W O this figure is appropriateWonly for 50MHz,
.Cstrictly Y.Cit can be.used Was a
WW
5
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W 7
W .C W .TW
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W 1 00Y M
WPOST . 1 00Y The hysteresis
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W .100via the 10kΩ O M
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W .CO .Tand .Cwaveshape
W WW .to10give
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WW .1001 Y.C M.T13 W 0.1µF FILTER WW .100Yshown potentiometer W 2kΩ bias arrangement 0Ythe TW
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W O in M Figure 12 for 20k, 500k, 2M W
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W 10 O 9
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WW .100Y.C M.TW .TW
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W
WW .100Y.C MfO.T= W WW .10to0Y .C
the FSK output. .TW The high-frequency WWsum components . 1 00Y of the .TW
Minput
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5MHz
W O M W . C O
.01µF W
WW .100Y.C M.TW
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WW .1comparator’s
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also are viable
WW .100Y
as noise on the phase
M .TW
W O M W O
W 200
WW .100Y.C M.TW
1kO
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WWOUTLINE Y .COF O
SETUP W PROCEDURE W WW 00Y.CO .TW
Y W .10 0 .T .1
W .100 .T M
12V
OM frequency of the VCO:WIFW
SR01032

FigureW 8.W .C OM W W 1. Determine Y . Coperating W W ÷ N in feedback

0 Y .CO .TW
FM Demodulator
00Y
at 12V W W .100then OM.T 0
W
W.1 Y.COM W
.T Wloop, .C W W.1 Y.COM W
W W
FSK Demodulation W W
. 1 00for FSK demodulationM .T since it W W fO
.
=
1
N
00 IN
x Y
f .
O M .T W
W .100 O M.T
The 564 PLL is particularly attractive W O WW .100Y. C
WW .100Y.C M.TW .TW
2. Calculate value of the VCO frequency set capacitor:
contains an internal voltage WWcomparator 0Y and.CVCO which.TW have TTL M
. 1 0 M W 1 O W O
compatible inputs and outputs, W
WW
and it can operate
0 Y .COfrom .aTsingle W
5V
WWCO ≅ .1002200 Y.CfO .TW WW .100Y.C M.TW
power supply. Demodulated DC voltages 1 0 associated with
M the mark M W CO
and space frequencies are recovered W W. with aYsingle .C Oexternal
W WW
3. Set I2 (current 0 Y .COinto Pin
sinking W
2) for ≅ 100µA. W Woperation
After 0 0isY. .TW
capacitor in a DC retrieverW 00extensive filtering .T W . 1 T
0 value mayMbe. adjusted for best dynamicW . 1 M
without utilizing . 1 M O O
WW 00Y.C
obtained, this behavior,
networks. An internal comparator,
W WW acting as aY
0 .CO trigger
Schmitt
. T W
with Wand . W
Tvalue VW
W
CC
1.3V .10
0Y.C M.T
1 0 replace . 1 with fixed M
resistor of R = W . O
an adjustable hysteresis, shapes the demodulated
W.
Whigh-frequency .C OM into
voltages
WW 00Y.CO .TW
2
W IB W
0Y.C .T
Y W W 0
00 in excessM W.1 Y.COM
compatible TTL output levels. W The design of .T
the 564 2
.1rates W 1 frequency
.output O Mwith digital counter at PinW
enables it to demodulate FSK at high data W O of 1.0M 4. Check VCO
.C 9 of
WW .100Y.C M.TW WW(loop open, Y to φ det.).
.1for00exact .TW Wfrequency.100
baud.
W O
device
W
VCO
C O
Adjust CO trim or
Mfrequency, W W .COM
Wdecoder0designed .C adj. Pins
W 5. CloseWloop and inject W 4 - 5
Y .center
W if needed.
W 0 0 Y
Figure 10 shows a high-frequencyW
frequency deviations of +1.0MHz centeredW
FSK Y for input
.1 0a free-running O M.T W .100input signal O Mto.T Pin 6. Monitor Pins 3 andW
W 6 .1
around
.C W . C
YLock should.Toccur W with ∆φ3 - 6Wequal to
frequency of 10.8MHz. the value ofW theW 00Y required W W
with two-channel
.100
scope.
timing capacitance
W .140pF. O M.T 90o (phase error). W C O M
was estimated from Figure 8 to be approximately
capacitor was added to fine tune fO’ 10.8MHz. WW .100Y.C M.TW
A trimmer
WW .100Y. M .TW
W O W O
WW .100Y.C M.TW WW .100Y.C
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O7
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O6. M
.T
If pulsed burst or ramp frequency W .1is used for input
.C OMsignal, special W50%Win.1duty cycle,Y .CO
M
DC offsetsW will occur in the loop which tend to
Y .C W W W 0 0 Y .T W W 1 0 0 .TVCO.
0 0 loop.T filter design may be required .in 1 place of simple M single create .
an artificial or
O M
biased
W.1 Y.COcapacitor M filter on Pins 4 and W5.W (See PLLY .CO section)
application W W
W
Wmultiplier 0 Y.C where phase Wjitter is a problem, loop filter
M.Tto a value of 10 - 50µF on Pins 4,
W W 0 T 8. For 0 circuits
1 0 0 7. TheM
T
. signal to Pin 6 and the VCO . 0
1feedback signal M . W 1
. may be increased O
. input W O to Pin 3 capacitors
.C
WW 00Y.CO must have
.TW a duty cycle of W 50%
1
Y.C of the.Tphase
Wfor proper00operation W W W
5. Also, careful
.
Y
100supply decouplingM .TWmay be necessary. This
. 1 M . O
W mixer if signals are not M W O
W O
WW .100Y.C M.TW WW .100Y.C M
detector. Due to the nature of a balanced includes the counter chain VCC lines.
WW .100Y.C M.TW .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C BIAS W 0.22µF WW .100Y.C M.TW
.T0.22µF
ADJM
W O W +5V O WW 00Y.CO .TW
WW .100Y.C M.TW WW .100Y.C10k M.TW W
W O W 2k Y.CO
10k 1.2k
W W.1 Y.COM W
.C W W W FSK 00 .T
WW .100Y M .TW W . 100 M .T ADJUST
HYSTERESIS
W .1
OUTPUT OM
W O W C O W .C
. .TW
2k
W Y
WW .100Y.C M.TW W . 1 00Y 1 10 M.TW 15
W
16
W .100 O M
WW O
W
WW .100Y.C M.TW
O
W 0.1µF
00Y6.C M.TW
2
WW .100Y.C M.TW
FSK
W . 1 O W O
W O Y.C WW .100Y.C M.TW
INPUT

WW .100Y.C M.TW WW 0.1µF 1k

1 0 0 .T W
O W. 7 OM 14 W Y.C
O
W
WW .100Y.C M.TW WW 1k.100Y.C M .T W WW 10µF/8V
.1 0 0 M.T
W
O W O NE564 W .C O
W
WW *NOTE: 0Y.C M.TW W510Ω W 3
0Y.C M.TW WW 0–20pF .100
Y .TW
. 1 0 . 190 W O M
WW 00Y.C O 12
WW .100Y.C M.TW
+5V
WR9-11 only if rise O
WW .100Y.C M.TW
Use time is critical.
W*510Ω
. 1 M .TW 33pF

W W .C O
W WW 00Y.CO .TW 13
11
W WW 00Y.CO .TW
W 00 Y .T W300pF
4 .1 .1 M
W.1 Y.COM W W W .C OM 8
WW 00Y.CO .TW
W W 5
00 Y .T W W
W
W .100 O M.T 300pF
W.1 Y.COM W W W.1 Y.COM SR01034 W
.C W
WW .100Y M .TW FigureW 10. 10.8MHzW . 0 Decoder
10FSK O M .T
Using the 564
W
W .100 O M.T
W O WW .100Y. C
WW .100Y.C M.TW WW .100Y.C M.TW M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W . C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W
W
W .100 O M.T
W
W .100 OM
.T
W W.1 Y.COM W
C W .C W
WW .100Y. M.T
W W .100
Y
M.T
W 00
W.1 Y.COM W
.T
W O W . C O W
WW .100Y.C M.TW WW .100Y M .TW W .100 M.T
W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M.T
W
W O W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .T
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM
.C W W 00 .T
WW .100Y M.T
W W .100 M.T W.1 Y.COM
W O W .C O W
WW .100Y.C M.TW WW .100Y M.T
W W .100
W O W C O W W .COM
.C W Y . W W 0 Y
WW .100Y M.T
W W .100 M.T W.1
0
W O W W .C O W
WW .100Y.C M.TW W .100
Y
M.T
W W
W O W C O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
WW .100Y.C M.TW WW .100Y.C
W O W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O8
WW .100Y.C
 O
0 Y.C W
W .1 0
O M.T
WW .100Y .C W
M.T
Philips Semiconductors Product specification
W O
.TW WW .100Y.C M.TW
Phase-locked loop Y.CO M WW 00Y.CO .TW NE/SE564
0 0 .T W W .1 M
W . 1 O M W O
WW .100Y.C M.TW WW .100Y.C M.TW
W WW 00Y.CO .TW W WW 00Y.CO .TW
W
O M.T W .1
.C OM W W.1 Y.COM W
.C W W
00Y .TW W .100
Y
M.T
W .100 OM
.T
W.1 Y.COM W W C O W W .C W
00 .T WW .100Y. M .TW W .100
Y
M.T
. 1 M W O W .C O
WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y M .TW
. 1 M W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM W
.C W
WW .100Y M .TW W
W . 100 O M .T W
W .100 OM
.T
W O C W .C
WW .100Y.C M.TW W W
1 00Y
.
M .TW W .100
Y
M .TW
W . O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM W
.C W W 00 .T
WW .100Y M.T
W W .100 M.T W.1 Y.COM W
W O W .C O W
WW .100Y.C M.TW WW .100Y M.T
W W .100 M.T
W O W O W W .C O
WW .100Y.C M.TW WW .100Y.C M.TW W .100
Y
M.T
W
W O W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W .C O
W WW 00Y.CO .TW W WW 00Y.CO .TW
W 00 Y .T W .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.COSR01035.TW
W W
W
W .100 Figure O
.T
M11.
W
W .100 OFSKM.T W W.1 Y.COM W
C Phase Comparator W(Pins 4 and 5) .C
and (Pin W 16) Outputs
WW .100Y. M.T
W W .100
Y
M.T
W 00
W.1 Y.COM W
.T
W O W W . C O W
WW .100Y.C M.TWBIAS ADJUST W +5V .100Y M .TW W
W .100 O M.T
W O W O W .C
WW .100Y.C M.TW
W .47µF
Y.C .TW W .100
Y
M.T
W
10k W
W . 100
CER.
O M W C O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. M .TW
W O
W O WW 00Y.CO .TW WW .100Y.C M.TW
WW .100Y.C M.47µF
I
.TW CER. 2 2k W
. 1 O M W O
W O WW .33µF Y.C WW .100Y.C M.TW
WW .100Y.C M.TW 2 1 W .1 0 0 M .T W
W O
W INPUT OSIGNAL 10
WW5
4 W
.CO .TW 510Ω
WW .100Y.C M.TW
WW .100Y.C M.TW .1 0 0 YLOOP
FILTER
M
W W .C O 6
W
11 W
W .33µF
Y .CO W W WW 00Y.CO .TW
Y W 0 .T
W 00 T 1kΩ .10 W.1 Y.COM
NE564
f
.T OM
W.1 Y.C.47µF OM DET. W W*510Ω
.C W W
W .T7 W W9 100
Y .T OUTPUT W .100 M.T
VCO
W .1 00 M W . O M W .C O
W O VCO
W Y.C WW .100Y
WW .100Y.C M3.TW 8 12 13W
. 100 M .TW W OM
.T
W O W
Nxf T
.C O W Y .C
WW .100Y.C M.TW CO WW .100Y M.T
W W .100
W O W C O W W .C OM
.C W Y . W W 0 Y
*NOTE:
WW .100Y M.T
W W .100 M.T W.1
0
Use R9-11 only if rise time is critical.
W O W W .C O W
WW .100Y.C M.TWf = NxfT W .100
Y
M.T
W W
W O W C O
WW .100Y.C M.T ÷N
W WW .100Y. M .TW
W O W O
WW .100Y.C M.TW WW .100Y.C
O
W12. NE564 Phase-Locked
Figure Frequency Multiplier W
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
1994 Aug 31 W O9
WW .100Y.C