Dry Etch Process –

Basic Level
Nick Hsu
Advanced Development Technology Process Engineering
Agenda
• Chapter 1: Purpose of Dry Etch
• Chapter 2: Dry Etch in the Overall Process Flow
• Chapter 3: Dry Etch Process Basics
• Chapter 4: Types of Processes in Dry Etch
• Chapter 5: Interactions Between Dry Etch and Upstream/ Downstream Processes
• Chapter 6: Primary Measurements in Dry Etch
• Chapter 7: Common Defects in Dry Etch

2
Chapter 1:
Purpose of Dry Etch

3
What is Etch?
PATTERNED ETCH PROCESS
Etch is the removal of unwanted material from a wafer surface
Resist
1) Patterned etching
Film
– Removes material from selected areas on the wafer that are unprotected by photoresist
Substrate
2) Unpatterned etching
Step 1: Photo Pattern
– Complete removal of a layer whose purpose is done
- Examples are photoresist, and sacrificial films (typically oxides and nitrides)
Resist
– Partial removal of a layer Film
- Most common example is spacer etch
Substrate
3) Wafer cleaning Step 2: Dry Etch
– Removal of contaminants and residues from previous processing

Film

Substrate

Step 3: Resist Strip

4
Definition of “Dry” Etch
• Removal of material from a wafer using plasma (ionized gases)
• Wet chemicals are not used
• Very fine and precise patterns can be etched into a film, layer, or the silicon substrate
– Wet etch cannot do this
• Dry etch can also be used for blanket (unpatterned) etches

5
Isotropic(等向性) vs. Anisotropic (非等向性) Etch
Isotropic Etch:
• A process that etches at the same rate in all directions.
• MOST wet etches and SOME dry etches are isotropic

Resist Resist
Etch
Film to be
Film to be
Etched
Etched

Substrate Substrate

6
 Isotropic(等向性) vs. Anisotropic (非等向性) Etch
Anisotropic Etch:
• A process that etches only in one direction.
• This is the most important advantage of dry etching. It enables patterning of very
small features.

Resist Resist
Etch
Film to be Film to be
Etched Etched

Substrate Substrate

7
How Small Is a Nanometer?
Start with a centimeter. A centimeter is about the size of a bean.
1 cm

Divide the centimeter into 10 equal Each part is a millimeter long. About the
parts. size of a flea.
1 mm

Divide the millimeter into 10 equal Each part is 100 microns long. About the
parts. size (width) of a human hair.

100 mm

Divide 100 microns into 100 equal Each part is a micron long. About the
parts. size of a bacterium.
1 mm

Divide the micron into 10 equal Each part is a 100 nanometers long.
parts. About the size of a virus.
100 nm

Finally divide 100 nanometers into Each part is a nanometer. About the size
100 equal parts. of a few atoms or a small molecule.
1 nm

Further? Divide the nanometer into Each part is an Angstrom. About the size
10 equal parts. of the smallest atoms.
1Å
Data source: Micron 8
Chapter 2:
Dry Etch in the Overall
Process Flow

9
Dry Etch in the Wafer Processing Flow
Wet Thin film
Wafer Start Process Probe (CVD/PVD)
Beginning of Fabrication End of Fabrication
Clean
Photo
CVD, Diffusion,
PVD, or Wet
Wet Process Wet
Diffusion CMP
Process Process Etch
Deposition, (Dry/Wet)
Anneal Oxidation, Planarization
Resist Strip Clean
Metallization, or
Plating
Diffusion
Ion Implant Photo

Implant Resist CMP

Layer

Wafers will go through

Wet Wet
Dry Etch Dry Etch 40-60 times
Process Process
in a typical process
Clean Etch Resist Strip flow.

Metrology and RDA inspection steps can occur after every process area above.

Data source: Micron 10

Chapter 3:
Dry Etch Process
Basics

11
Dry Etch Basics – Chemical Reactions
Chemical reactions are processes where sets of materials are transformed into another
material.
The new material usually has very different properties from the original materials.
Chemical reactions take the following form:

REACTANT 1 + REACTANT 2 +… ➔ PRODUCT 1 + PRODUCT 2 +…

EXAMPLE:
2H2 + O2 ➔ 2H2O + ENERGY

Many chemical reactions require heat or energy in order to happen. This is the case for all
dry etch reactions.

Data source: Micron 12

Dry Etch Basics – Chemical Reactions
A dry etch process needs:
1. One or more gasses
2. A vacuum system
3. Energy (indicated by the Greek letter D)
4. Plasma (more on this later)
Example: silicon dioxide etch
CF4 + DSIO2 → SIF4 + CO2
plasma

{
{
{

Input (reactant) Gas: Solid Film to be Output (byproduct) Gasses:

Carbon Tetrafluoride etched: Silicon Dioxide Silicon Fluoride and Carbon Dioxide

Note: Since a dry etch process involves removing a solid film, there will always be a
solid on the left side of the reaction.

13
Dry Etch Basics – Vacuum 一個標準大氣壓即是1 atm。1個標準大氣壓等於101325帕、1013.25百帕和
1.01325巴，或者76公分水銀柱高，也就是1033.6公克重/平方公分。

• The weight of our atmosphere (air) exerts pressure on all

objects on the surface of the earth.
• This “atmospheric pressure” is 14.7 pounds per square inch
(psi) at sea level.
• If some of the air is removed from a chamber, the pressure
1 square inch of
inside is less than atmospheric pressure. air weighs 14.7
• This is called a “vacuum” lbs. at sea level

• All dry etch processes occur in a vacuum for the following

reasons:
• Ensures only desired gasses are involved in reaction
• Safety (some of the gasses are hazardous, leaks will be into
chamber rather than out)
• Easier to “strike” a plasma
• Control of etched feature shape (profile)

14.7 psi 5 psi

Atmospheric pressure Vacuum

Data source: Micron 14

Dry Etch Basics – Plasma
Plasma is a gas that has so much energy that a number of atoms or molecules (~ 0.1 – 1%)
have been “ionized”
How to generate a plasma:
– High temperature
– Electric current (e.G. Compact fluorescent)
– Radio frequency (RF) electric fields (e.G.
Our tools)
– Magnetic fields (e.G. Inductively coupled)

Properties
– Very conductive
– Very chemically reactive
– Can be directed with electric or magnetic fields
– Glows

A plasma contains: ions and free radicals

Data source: Micron 15

Plasma: Ions[離子]
What is an Ion?
• An ion is an atom or molecule that has lost or gained electrons so that there is an
unequal number of protons and electrons.
• An unequal number of protons and electrons makes the ion an electrically charged
particle.
• Example: Boron
‣ Boron atom: 5 protons (p+), 5 electrons (e–) → neutral, no charge
‣ Positive Boron ion: 5 protons (p+), 4 electrons (e–) → +1 positive charge
‣ Negative Boron ion: 5 protons (p+), 6 electrons (e–) → –1 negative charge
-- --
--
-- -- --
+ + + + + +
+ + +
+ + +
+ -- + -- +
-- -- -- --

-- - -
Neutral Boron Atom Positive Boron Ion Negative Boron Ion
Data source: Micron 16
Plasma: Free Radicals[自由基]
What is a Free Radical?
• Free Radicals are species with a lot of
chemical energy
• They are not ions (no charge)
• They readily participate in chemical reactions
• In the following example, the free radical Cl is
generated (the stable state of chlorine is Cl2).
‣ Since Cl (by itself) is unstable, it readily
reacts with aluminum (or any metal) as
follows:
‣ Al(s) + 3Cl(g) → AlCl3 (g)
‣ This is an aluminum etch process.

Data source: Micron 17

What is Plasma Etching?
1. Take a molecular gas e.g. “CF4”. F F
C
F F
2. Strike a “plasma” and create free radicals by dissociating
(splitting apart) the molecular gas.
CF4(gas) ➔ CF2(gas) + 2F(very reactive gas)

3. Bring the free radicals to a solid (i.e. Silicon wafer) and allow
them to react with the solid. A “volatile” (gaseous) byproduct
forms. Si
Si(solid) + 4F(reactive gas) ➔ SiF4(byproduct gas)
F F

4. Pump away the volatile product

Data source: Micron 18

Dry Etch Process Basics
Dry etching follows the resist patterns on the wafer, which means it only etches away
materials that are not covered by the mask material.

Plasma Generated Ions and Free Radicals

Resist
Pattern

Layer to be
Etched

Substrate

Data source: Micron 19

Dry Etch Process Basics
Once the etch has been completed, the remaining resist is removed by wet chemicals or
another plasma etch (strip) leaving only the newly formed feature.

After stripping of Resist :

Etched Layer

Substrate

Data source: Micron 20

Dry Etching Mechanism-1
1) Purely Physical (Sputter Etching)
• Ions provide physical energy to drive the reaction
• Ions accelerated by the electric field bombard and vaporize the wafer surface
• Very directional (anisotropic), but very poor selectivity (1:1)
• Does not stop after one film is etched, continues on through the next
• Used For: Focused Ion Beam (FIB) for yield analysis

Ion Sputtered
+ Species

Resist Resist

Negative (–) voltage

Data source: Micron 21

Dry Etching Mechanism-2
2) Purely Chemical
• Free Radicals provide chemical energy to drive the reaction
• Free Radicals chemically etch the exposed film surface
• Non directional (Isotropic), very high selectivity
• Similar to wet etching
• Used For: Photoresist Strip
Free Radical
0 Volatile
Products

Resist Resist

Negative (–) voltage

Data source: Micron 22

Dry Etching Mechanism-3
3) Physical AND Chemical Etch (Reactive Ion Etch)
• Combines directional (anisotropic), with good selectivity
• Ion and radical action greatly increases etch rate
• Used for: Most patterned etches

Radical
0 Ion Etch
+ Product

Resist Resist

Negative (–) voltage

Data source: Micron 23

Reactive Ion Etching = RIE
RIE Etch rate is more than the sum of the parts!

chemical physical + chemical physical

etch only etch (RIE) etch only

Experiment done by Coburn and Winters

J. Vac. Sci. Tech., 16(2), 1979, 391.

Data source: Micron 24

Basic RIE Hardware Configuration
Etchant Gas RF
(ex. CH2F2, Cl2, CF4) Power
Top Electrode & Plasma
Gas Distribution Discharge
Panel
Reactive
++++++++ + Ions
Wafer
Negative (–) voltage
Bottom
Electrode
Vacuum
The “Reactive Ion Etch” (RIE) Process
Pump
Wafer sits on the lower electrode.
RF Power is turned on and the plasma “ignites”
Positively charged ions are accelerated toward the substrate (which has a negative voltage).
These ions enhance the chemical etching reactions.
The downward path of the ions makes anisotropic etching possible.

Data source: Micron 25

Very Vertical Profiles Using Sidewall Passivation

+ + + +
R polymer R polymer R

Resist Resis Resis Resis

t t t

Oxide Oxide Oxide Oxide

Substrate Substrate Substrate Substrate

( – voltage) (– voltage) (– voltage) (– voltage)
Ions begin to etch Exposed sidewalls Polymer deposits to Ion etching removes
a vertical contact are vulnerable to protect sidewalls polymer from floor of
etching by radicals from radical etching contact

Data source: Micron 26

Very Vertical Profiles Using Sidewall Passivation

+ + +
polymer R polymer R polymer R

Resis Resis Resis

t t t

Oxide Oxide Oxide Oxide

Substrate Substrate Substrate Substrate

(– voltage) (– voltage) (– voltage) (– voltage)
Ion and radical etching Polymer deposition Etch continues until the Remaining polymer is
continue on the exposed continues to protect the contact is finished removed at photoresist
floor of the contact sidewalls strip and subsequent
clean

Data source: Micron 27

Critical Parameters in Dry Etch
Process Parameters:
• Surface interaction:
Equipment Parameters:
 Layers to be etched
• Power
 Surface Temperature
• Pressure
 Surface Charge
• Temperature
 Surface Topography
• Gas Flow
• Time
• Gas Ratio
Plasma Etching Period and Duty Cycle
• Electrode Spacing (Gap) A Wafer
(Pulsed Etch)

Quality Measures:
• Etch Rate
Other Contributing Factors:
• Selectivity
• Operating Procedures
• Uniformity
• Maintenance Procedures
• Profile
• Preventive Maintenance Schedule
• CD (Critical Dimension)
• Residue / Defect
Data source: Semiconductor Manufacturing Technology, Quirk and Serda, Prentice Hall,2001

28
Dry Etch Equipment Types
Inductively Coupled Plasma (ICP,電感耦合型)

• RF is typically applied by an external transformer/coil

• power is applied to the plasma by current coupling
• Typically etches conductive materials where selectivity is important
• More wide control of pressure and species, capable of high-density plasmas
• Usually, larger plasma volumes

Capacitively Coupled Plasma (CCP,電容耦合型)

• RF is typically applied by an internal/consumable electrode

• Power is applied to the plasma by voltage coupling
• Typically etches dielectric materials where high aspect ratio is important
• Capable of higher ion bombardment energies
• Usually smaller plasma volumes due to small electrode gap

Data source: Micron 29

Aspect Ratio
Aspect Ratio (AR): the complexity of the etch is dependent on BOTH the width
and the depth of the feature
• AR = depth ÷ width
• As the aspect ratio increases, the difficulty of the etch also increases

Oxide Oxide

Silicon Silicon

AR = 1:1 AR = 2:1 AR = 10:1

Data source: Micron 30

Chapter 4:
Types of Processes in
Dry Etch

31
Dry Develop Etch (CDBR)
Resist
Step 1: DARC/BARC DARC/BARC

• Bottom AntiReflective Coating (BARC) Carbon or

Underlayer
• Dielectric AntiReflective Coating (DARC)
Underlying
• These layers are used as a hardmask for Dry Etch Layer
and an antireflective layer for Photo. Eventual
Etched
• SiOXNY(solid) + HBr(gas) + CF4(gas) ➔ (byproduct gases) Feature

DAR/BARC
Step 2: Carbon/Underlayer Etch
Carbon or
• C(solid) + SO2(gas) + O2(gas) ➔ (byproduct gases) Underlayer

• Resist (a carbon containing material) is completely Underlying

Layer
removed in this step.
Eventual
• Over-etch of either layer can be used to control CDs Etched
Feature

32
Data source: Micron
33
February Data source: Micron 33
Spacer Etch
Purpose: To leave a protective film on only the sidewalls of a feature on the wafer surface.
• Spacers are used to precisely position source/drain implants during transistor formation.
• Spacers are used for pitch doubling.
• Spacers are also used to protect exposed metal layers from corrosion.
The spacer etch is designed to be very vertically oriented. It is only allowed to etch long
enough to remove the horizontal film, then it is stopped to allow the sidewalls to remain.
Vertical dry etch
spacer

feature
feature
feature

spacer

spacer

spacer
substrate substrate substrate substrate
Conformal Film is Spacer Etch Leaves Film Spacer Etch Leaves Film 1->2
Deposited on Sidewalls Only on Sidewalls Only 2->4
…
Data source: Micron 34
Chapter 5:
Interactions Between Dry Etch and
Upstream/Downstream Processes

35
Interactions
Photolithography → Dry Etch
• Critical Dimensions: CD’s that are too large or
small coming out of photo directly translate to the
final feature produced in Dry Etch. Some causes:
• Over-develop/Under-develop
• Over-expose/Under-expose

Resist
• Resist Adhesion: Microscopic lifting at the edges
Oxide
of resist features leads to enlarged features after After
dry etch. Develop

• Vapor Prime helps to improve resist Substrate

adhesion.
Resist
• Wafers from a previous wet process step that
are not completely dry will exhibit poor resist After Oxide
adhesion. Dry Etch

Substrate

Data source: Micron 36

Interactions
Photolithography → Dry Etch
• Etch Bias:
– The dry etch process can grow or shrink the CD that is produced in photolithography.
– Etch Bias = (Etched Feature Size) – (Printed Feature Size)
– It is most critical that the final CD (ACI) is within spec.

Printed Feature Size PHOTORESIST

Etched Feature Size OXIDE FILM

SILICON
SUBSTRATE

Data source: Micron 37

Interactions
Photolithography → Dry Etch
• Toppling: Resist features that have a large ratio of
height to width (a.k.a. “aspect ratio”) can topple.
• The toppled feature will block the subsequent
dry etch.
• Hard Mask technology (such as Transparent Etch will be
blocked here
Carbon) is often used where toppling is a
concern.

• Erosion: During all Dry Etch processes, the resist

Remaining
material is also etched to some degree. Resist
• If the etch rate of the resist is too high, then the Underlying
resist will be completely etched away before the Layer
dry etch is complete. Eventual
Etched
Feature

Data source: Micron 38

Data source: Micron 39
 40
Data source: Micron
41
February
Data source: Micron 41
42
Interactions
Dry Etch → Photolithography
• Blocked Etch Defects: Particles
Resist
introduced at any point in the photo or dry
Underlying Defect
etch process can prevent the pattern from Layer
being etched.
Particle introduced during dry etch

Underlying
Layer
Unetched feature
After Dry Etch and Strip

Data source: Micron 43

Interactions
Photolithography → Dry Etch
• Residual Resist (Scumming): Resist left
behind from the develop operation can Resist
block the subsequent dry etch (or implant). Underlying Scumming
• This is especially a problem for layers Layer

that require thick resist. After Photo Develop

• In some cases, a “descum” (gentle Underlying

plasma clean) step is added to remove Layer
Blocked etch
residual resist. After Dry Etch and Strip

Data source: Micron 44

Chapter 6:
Primary Measurements
in Dry Etch

45
Important Measurements
•CRITICAL DIMENSIONS
•ETCH RATE
•SELECTIVITY
•UNIFORMITY
•PROFILE

46
Types of CD Measurement
Line Space Contact

Data source: Micron 47

CD Measurement Terminology
Full Name Acronym Reworkable Description
?
After Develop ADI YES Measure CD in the resist, after the pattern has been printed
Inspection in the photo area.
After Dry Develop ADD YES/not Measure CD in the carbon hardmask after the dry etch step
(Inspection) (ADD2,3) always that etches the photo pattern into the hardmask.
After Etch AEI NO CD measurement is taken after the etch, but with remaining
Inspection resist still present. Only used in special cases.
After Clean ACI NO CD measurement is taken after the dry etch is complete and
Inspection the resist has been stripped off and the wafer cleaned.
This is the most important CD measurement as this is
what will affect the operation of the part.
After Dry Trim ADT YES After resist trim etch (pitch doubled layers only)
After Spacer ASD YES After integrated spacer dep (pitch doubled layers only)
Deposition
After Spacer ASO YES After spacer oxide etch (pitch doubled layers only)
Oxide
48
Etch Rate
Etch rate: How fast a material is etched in each process.
– Etch rate = (thickness of film removed) ÷ (etch time)
– Units: generally angstroms/second
– Requires an accurate measurement of film thickness before and after the etch.
– High etch rate is desirable because it improves throughput.
- Etch rate can be increased by adjusting recipe parameters (rf power, pressure, gas flows).
- But often these adjustments have adverse impacts to other outputs (uniformity, selectivity,
profile)

49
Uniformity (global)
Uniformity: The variation in etch rate across the Film to be
wafer. etched

• If the etch rate is not uniform across the wafer, there Expected case
can be underetched feature in some areas and
Film to be
overetched features in other areas. etched

• Note: This problem cannot be corrected by

adjusting the etch time, nor by using endpoint!
High etch rate in the
• not to be confused with Local uniformity (LCDU) wafer center
Film to be
etched

Low etch rate in the

wafer center

Data source: Micron 50

Etch Profile
Profile: The shape of the final etched feature.
• In most cases (but not all) it is desirable to have a perfectly vertical profile.

Lines: Good Lines: Flared Lines: Undercut Lines: Corrosion of

vertical profile profile profile intermediate layer

Contacts: Good Contacts: Bowed Contacts: Contacts:

vertical profile profile Slanted profile Tapered profile
Data source: Micron 51
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