QPA1011D

7.9 – 11.0 GHz 25 W GaN Power Amplifier

Product Description
Qorvo’s QPA1011D is a X-band high power MMIC amplifier
fabricated on Qorvo’s production 0.15um GaN on SiC
process (QGaN15). The QPA1011D operates from 7.9 – 11
GHz and typically provides 25 W saturated output power
with power-added efficiency of 37% and large-signal gain
of 20 dB. This combination of wideband performance
provides the flexibility designers are looking for to improve
system performance while reducing size and cost.

QPA1011D can also support a variety of operating

conditions to best support system requirements. With good
thermal properties, it can support a range of bias voltages
and will perform well under both CW and pulse operations.

The QPA1011D is matched to 50Ω with integrated DC

blocking capacitors on both RF I/O ports simplifying system
integration. The wideband performance and operational
Product Features
flexibility allows it support satellite communication and data  Frequency Range: 7.9 – 11 GHz
links, as well as, military and commercial radar systems.
 POUT: 45 dBm at PIN = 25 dBm
The QPA1011D is 100% DC and RF tested on-wafer to  PAE: 37 % at PIN = 25 dBm
ensure compliance to electrical specifications.  Large Signal Gain: 20 dB at PIN = 25 dBm
 Small Signal Gain: 26 dB
Lead-free and RoHS compliant.
 Integrated Power Detector
 Bias: VD = 24 V, IDQ = 1200 mA, VG = −2.0 V Typical
 Pulsed VD: PW =100 µS, DC = 10%
 Chip Dimensions: 2.75 x 3.12 x 0.10 mm
Functional Block Diagram
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.

Applications
 Satellite Communications
 Data Links
 Military and Commercial Radar

Ordering Information
Part No. Description
QPA1011D 7.9 – 11 GHz 25 W GaN Power Amplifier
QPA1011DPCB4B01 Evaluation Board

Data Sheet Rev. D, May 2021 | Subject to change without notice - 1 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier
Absolute Maximum Ratings Recommended Operating Conditions
Parameter Value / Range Parameter Value / Range
Drain Voltage (VD) 29.5 V Drain Voltage (VD) 24 V
Gate Voltage Range (VG) −8 to 0V Drain Current (IDQ) 1200 mA
Drain Current (I D1/ID2) 672 mA / 2880 mA Gate Voltage (VG), Typical −2.0 V
Gate Current (IG) See chart, pg. 21 Temperature (TBASE) -40 to +85 °C
Power Dissipation (PDISS), 85°C, CW 61 W Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
Input Power (PIN), CW, 50Ω, recommended operating conditions.
30 dBm
VD=28 V, IDQ=1200 mA, 85 °C
Input Power (PIN), CW, VSWR 3:1,
30 dBm
VD=28 V, IDQ=1200 mA 85 °C
Mounting Temperature (30 seconds) 320 °C
Storage Temperature −55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.

Electrical Specifications
Parameter Min Typ. Max Units
Operational Frequency Range 7.9 11 GHz
Output Power (PIN = 25 dBm) 7.9 GHz 44.8 dBm
9.0 GHz 45.2 dBm
11.0 GHz 44.7 dBm

Power Added Efficiency (PIN = 25 dBm) 7.9 GHz 44.2 %

9.0 GHz 38.4 %
11.0 GHz 38.5 %

3rd Order Intermodulation Level 7.9 GHz −21.5 dBc

(POUT/Tone= 38 dBm) 10.0 GHz −20.5 dBc
11.0 GHz −21.5 dBc

Small Signal Gain 7.9 GHz 25.9 dB

9.0 GHz 26.2 dB
11.0 GHz 24.9 dB

Input Return Loss 7.9 GHz 12 dB

9.0 GHz 25.5 dB
11.0 GHz 15 dB

Output Return Loss 7.9 GHz 8.5 dB

9.0 GHz 7 dB
11.0 GHz 25 dB

Output Power Temperature Coefficient (25 – 85 °C) @ PIN = 25 dBm −0.006 dB/°C
Small Signal Gain Temperature Coefficient (25 – 85 °C) −0.049 dB/°C
Recommended Voltage Operations 24 28 V
Gate Leakage (VD = 10 V, VG = -4 V) -13.2 0.1 mA
Test conditions, unless otherwise noted: 25 °C, Pulsed VD: PW = 100 µS, DC = 10%, VD = 24 V, IDQ = 1200 mA, VG = −2.0 V Typical

Data Sheet Rev. D, May 2021 | Subject to change without notice - 2 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (Pulsed)

47
Output Power vs. Frequency vs. Temp. Power Added Eff. vs. Frequency vs. Temp.
55
VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm
46 50 Pulsed VD : PW = 100 µS, DC = 10%

Power Added Eff. (%)

Output Power (dBm)

45
45
40
44
35
43
- 40 C +25 C +85 C 30
42
25
Pulsed VD : PW = 100 µS, DC = 10% - 40 C +25 C +85 C
41 20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Drain Current vs. Frequency vs. Temp. Gate Current vs. Frequency vs. Temp.
4500 5.0
VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm 4.5 VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm
4000
4.0 Pulsed VD : PW = 100 µS, DC = 10%
Gate Current (mA)
Drain Current (mA)

3500 3.5
3000 3.0
2.5 - 40 C +25 C +85 C
2500
2.0
2000 1.5
- 40 C +25 C +85 C 1.0
1500
0.5
1000
Pulsed VD : PW = 100 µS, DC = 10% 0.0
500 -0.5
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Output Power vs. Frequency vs. VD Power Added Eff. vs. Frequency vs. VD
47 60
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C
46 55
Pulsed VD : PW = 100 µS, DC = 10%
Power Added Eff. (%)
Output Power (dBm)

50
45
45
44
40
43
35
42
18 V 20 V 22 V 24 V 26 V 28 V 30
41 25
Pulsed VD : PW = 100 µS, DC = 10% 18 V 20 V 22 V 24 V 26 V 28 V
40 20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 3 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (Pulsed)

Drain Current. vs. Frequency vs. VD Gate Current. vs. Frequency vs. VD
4500 2.0
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C 1.8 PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C
4000
1.6 Pulsed VD : PW = 100 µS, DC = 10%
Drain Current (mA)

Gate Current (mA)

3500 1.4
1.2
3000
1.0
2500 0.8
0.6
2000
0.4
1500 18 V 20 V 22 V 24 V 26 V 28 V 0.2
0.0
1000
Pulsed VD : PW = 100 µS, DC = 10% -0.2 18 V 20 V 22 V 24 V 26 V 28 V
500 -0.4
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Output Power vs. Frequency vs. IDQ Power Added Eff. vs. Frequency vs. IDQ
47 50
PIN = 25 dBm, VD = 24 V, Temp. = 25 °C PIN = 25 dBm, VD = 24 V, Temp. = 25 °C
46 45
Power Added Eff. (%)
Output Power (dBm)

45 40

44 35

43 600 mA 1200 mA 30 600 mA 1200 mA

42 25
Pulsed VD : PW = 100 µS, DC = 10% Pulsed VD : PW = 100 µS, DC = 10%
41 20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Drain Current. vs. Frequency vs. IDQ 2.0

Gate Current. vs. Frequency vs. IDQ
4500
PIN = 25 dBm, VD = 24 V, Temp. = 25 °C 1.8 PIN = 25 dBm, VD = 24 V, Temp. = 25 °C
4000
1.6 Pulsed VD : PW = 100 µS, DC = 10%
Gate Current (mA)
Drain Current (mA)

3500 1.4
3000 1.2
1.0
2500
0.8
2000 600 mA 1200 mA 600 mA 1200 mA
0.6
1500 0.4
0.2
1000 0.0
Pulsed VD : PW = 100 µS, DC = 10%
500 -0.2
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 4 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (Pulsed)

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
47 50
45 VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz
45
43 40

Power Added Eff. (%)

Output Power (dBm)

41 35
39
-40C +25C +85C 30
37
25
35
20
33
15 -40C +25C +85C
31
29 VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz 10
27 Pulsed VD : PW = 100 µS, DC = 10% 5 Pulsed VD : PW = 100 µS, DC = 10%
25 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Temp. Gate Current vs. Input Power vs. Temp.
4500 5.0
VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz 4.5 VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz
4000
4.0 Pulsed VD : PW = 100 µS, DC = 10%
Drain Current (mA)

3500
Gate Current (mA)

3.5
3000 3.0
2.5
2500
2.0
2000 1.5
-40C +25C +85C 1.0
1500 -40C +25C +85C
0.5
1000
Pulsed VD : PW = 100 µS, DC = 10% 0.0
500 -0.5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Output Power vs. Input Power vs. Freq. PAE vs. Input Power vs. Freq.
47 55
45 50 VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C
43 45
Power Added Eff. (%)
Output Power (dBm)

41 7.9 GHz 40
8.0 GHz 35
39 7.9 GHz
9.0 GHz 30
37 8.0 GHz
10.0 GHz 25
35 11.0 GHz 9.0 GHz
20
33 10.0 GHz
15
11.0 GHz
31 VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C 10
29 Pulsed VD : PW = 100 µS, DC = 10% 5 Pulsed VD : PW = 100 µS, DC = 10%
27 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 5 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (Pulsed)

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq.
4500 5
VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C
4000
4 Pulsed VD : PW = 100 µS, DC = 10%
Drain Current (mA)

Gate Current (mA)

3500
3
3000 7.9 GHz
2500 2 8.0 GHz
7.9 GHz
9.0 GHz
2000 8.0 GHz
1 10.0 GHz
9.0 GHz
1500 11.0 GHz
10.0 GHz
0
1000 11.0 GHz
Pulsed VD : PW = 100 µS, DC = 10%
500 -1
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Output Power vs. Input Power vs. VD Power Added Eff. vs. Input Power vs. VD
49 55
47 IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C 50 IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C
45 45
Power Added Eff. (%)
Output Power (dBm)

43 40
41
35
39
30
37
25
35
20
33
31 18 V 20 V 22 V 24 V 26 V 28 V 15
10 Pulsed VD : PW = 100 µS, DC = 10%
29
27 Pulsed VD : PW = 100 µS, DC = 10% 5 18 V 20 V 22 V 24 V 26 V 28 V
25 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. VD Gate Current vs. Input Power vs. VD
4500 5
IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C
4000 Pulsed VD : PW = 100 µS, DC = 10% 4
Pulsed VD : PW = 100 µS, DC = 10%
Drain Current (mA)

Gate Current (mA)

3500
3
3000
2
2500
18 V 20 V 22 V 1
2000

1500 24 V 26 V 28 V 0
18 V 20 V 22 V 24 V 26 V 28 V
1000 -1
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 6 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

47
Output Power vs. Frequency vs. Temp. Power Added Eff. vs. Frequency vs. Temp.
50
VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm
46 45

Power Added Eff. (%)

Output Power (dBm)

45 40

44 35

43 30

42 25
- 40 C +25 C +85 C - 40 C +25 C +85 C
41 20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

4500
Drain Current vs. Frequency vs. Temp. 14
Gate Current vs. Frequency vs. Temp.
VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm
4000 12
Drain Current (mA)

Gate Current (mA)

3500 10

3000 8

2500 6

2000 4 - 40 C +25 C +85 C

1500 2

1000 0
- 40 C +25 C +85 C
500 -2
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

VDELTA vs. Frequency vs. Temp.

3.0
VD = 24 V, IDQ = 1200 mA, PIN = 25 dBm
2.5

2.0
VDELTA (V)

1.5

1.0 - 40 C +25 C +85 C

0.5
VDELTA = VREF - VDET
0.0
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 7 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

Output Power vs. Frequency vs. VD Power Added Eff. vs. Frequency vs. VD
46 55
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C
45 50

Power Added Eff. (%)

Output Power (dBm)

45
44
40
43
35
42
30
18 V 20 V 22 V 24 V 26 V 28 V
41 25
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C 18 V 20 V 22 V 24 V 26 V 28 V
40 20
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Drain Current. vs. Frequency vs. VD Gate Current. vs. Frequency vs. VD
4500 1.0
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C
4000 PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C
0.5
Drain Current (mA)

Gate Current (mA)

3500
0.0
3000
-0.5
2500
-1.0
2000
-1.5
1500

1000 -2.0
18 V 20 V 22 V 24 V 26 V 28 V 18 V 20 V 22 V 24 V 26 V 28 V
500 -2.5
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

VDELTA. vs. Frequency vs. VD

3.0
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 25 °C
2.5

2.0
VDELTA (V)

1.5

1.0
VDELTA = VREF - VDET
0.5
18 V 20 V 22 V 24 V 26 V 28 V
0.0
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 8 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

Output Power vs. Frequency vs. IDQ Power Added Eff. vs. Frequency vs. IDQ
46 50
PIN = 25 dBm, VD = 24 V, Temp. = 25 °C PIN = 25 dBm, VD = 24 V, Temp. = 25 °C
45 45

Power Added Eff. (%)

Output Power (dBm)

44 40

43 35

42 600 mA 1200 mA 30 600 mA 1200 mA

41 25
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

4500
Drain Current. vs. Frequency vs. IDQ 0.4
Gate Current. vs. Frequency vs. IDQ
PIN = 25 dBm, VD = 24 V, Temp. = 25 °C PIN = 25 dBm, VD = 24 V, Temp. = 25 °C
4000 0.2
Gate Current (mA)
Drain Current (mA)

3500 0.0

3000 -0.2
600 mA 1200 mA
2500 -0.4

2000 -0.6

1500 -0.8

1000 600 mA 1200 mA -1.0

500 -1.2
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

VDELTA vs. Frequency vs. IDQ

3.0
PIN = 25 dBm, VD = 24 V, Temp. = 25 °C
2.5

2.0
VDELTA (V)

1.5
600 mA 1200 mA
1.0

0.5
VDELTA = VREF - VDET
0.0
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 9 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

Output Power vs. Input Power vs. Temp. PAE vs. Input Power vs. Temp.
47 50
45 45 VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz
43
40

Power Added Eff. (%)

Output Power (dBm)

41
35
39
37 30
35 -40C +25C +85C 25
33 20
31
15
29
10
27 -40C +25C +85C
25 VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz 5
23 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Temp. Gate Current vs. Input Power vs. Temp.
4500 30
VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz
4000 25
Drain Current (mA)

3500
Gate Current (mA)

20
3000
15
2500
10
2000 -40C +25C +85C
5
1500

1000 -40C +25C +85C 0

500 -5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

VDELTA vs. Input Power vs. Temp.

3.0
VD = 24 V, IDQ = 1200 mA, Freq. = 9 GHz
2.5
VDELTA = VREF - VDET
2.0
VDELTA (V)

1.5

1.0

0.5

0.0 -40C +25C +85C

-0.5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 10 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

Output Power vs. Input Power vs. Freq. PAE vs. Input Power vs. Freq.
47 50
45 45 VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C
43 40

Power Added Eff. (%)

Output Power (dBm)

41 35
7.9 GHz
39 8.0 GHz 30
37 9.0 GHz 25
35 10.0 GHz 7.9 GHz
20 8.0 GHz
33 11.0 GHz
31 15 9.0 GHz
29 10 10.0 GHz
27 VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C 5 11.0 GHz

25 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. Freq. Gate Current vs. Input Power vs. Freq.
4500 12
VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C
4000 10
Drain Current (mA)

Gate Current (mA)

3500
8
3000 7.9 GHz
6 8.0 GHz
2500
7.9 GHz 9.0 GHz
4
2000 8.0 GHz 10.0 GHz
9.0 GHz 2 11.0 GHz
1500
10.0 GHz
1000 0
11.0 GHz
500 -2
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

VDELTA vs. Input Power vs. Freq.

3.0
VD = 24 V, IDQ = 1200 mA, Temp. = 25 °C
2.5
VDELTA = VREF - VDET
2.0
VDELTA (V)

1.5

1.0

0.5 7.9 GHz

8.0 GHz
0.0 9.0 GHz
-0.5 10.0 GHz
11.0 GHz
-1.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 11 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Large Signal (CW)

Output Power vs. Input Power vs. VD Power Added Eff. vs. Input Power vs. VD
49 50
47 IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C
45
45
40

Power Added Eff. (%)

Output Power (dBm)

43
35
41
39 30
37 25
35 20 18 V 20 V
33
15 22 V 24 V
31
10
29 26 V 28 V
27 18 V 20 V 22 V 24 V 26 V 28 V 5
25 0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

Drain Current vs. Input Power vs. VD Gate Current vs. Input Power vs. VD
4500 25
IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C
4000
20
Drain Current (mA)

Gate Current (mA)

3500
15
3000

2500 10

2000 18 V 20 V 22 V 24 V 26 V 28 V
5
1500
0
1000
18 V 20 V 22 V 24 V 26 V 28 V
500 -5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm) Input Power (dBm)

VDELTA vs. Input Power vs. VD

3.0
IDQ = 1200 mA, Freq. = 9 GHz, Temp. = 25 °C
2.5
VDELTA = VREF - VDET
2.0
VDELTA (V)

1.5

1.0

0.5

0.0
18 V 20 V 22 V 24 V 26 V 28 V
-0.5
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Input Power (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 12 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Linearity

IM3 vs. Output Power vs. Temperature IM5 vs. Output Power vs. Temperature
0 0
VD = 24 V, IDQ = 1200 mA, Freq. = 7.9 GHz, Δf = 1 MHz VD = 24 V, IDQ = 1200 mA, Freq. = 7.9 GHz, Δf = 1 MHz
-10
-10 -20
-30
-20
IM3 (dBc)

IM5 (dBc)
-40
-30 -50
-60
-40 -70
-80
-50
- 40 C +25 C +85 C -90 - 40 C +25 C +85 C
-60 -100
16 18 20 22 24 26 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. Temperature IM5 vs. Output Power vs. Temperature
0 0
VD = 24 V, IDQ = 1200 mA, Freq. = 10 GHz, Δf = 1 MHz VD = 24 V, IDQ = 1200 mA, Freq. = 10 GHz, Δf = 1 MHz
-10
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)

-40
-30 -50
-60
-40
-70
-80
-50
- 40 C +25 C +85 C -90 - 40 C +25 C +85 C
-60 -100
16 18 20 22 24 26 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. Temperature IM5 vs. Output Power vs. Temperature
0 0
VD = 24 V, IDQ = 1200 mA, Freq. = 11 GHz, Δf = 1 MHz VD = 24 V, IDQ = 1200 mA, Freq. = 11 GHz, Δf = 1 MHz
-10
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)

-40
-30 -50
-60
-40
-70
-80
-50
- 40 C +25 C +85 C -90 - 40 C +25 C +85 C
-60 -100
16 18 20 22 24 26 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 13 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Linearity

IM3 vs. Output Power vs. VD IM5 vs. Output Power vs. VD
0 0
Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)
-40
-30 -50
-60
-40
-70
IDQ = 1200 mA -80 IDQ = 1200 mA
-50
18 V 20 V 22 V 24 V 26 V 28 V -90
18 V 20 V 22 V 24 V 26 V 28 V
-60 -100
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. VD IM5 vs. Output Power vs. VD
0 0
Freq. = 10 GHz, Temp. = 25 °C, Δf = 1 MHz -10 Freq. = 10 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-20 IDQ = 1200 mA
-30
-20
IM3 (dBc)

IM5 (dBc)

-40
-30 -50
-60
-40
-70
IDQ = 1200 mA -80
-50
18 V 20 V 22 V 24 V 26 V 28 V -90
18 V 20 V 22 V 24 V 26 V 28 V
-60 -100
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. VD IM5 vs. Output Power vs. VD
0 0
Freq. = 11 GHz, Temp. = 25 °C, Δf = 1 MHz -10 Freq. = 11 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)

-40
-30 -50
-60
-40
-70
IDQ = 1200 mA -80 IDQ = 1200 mA
-50
18 V 20 V 22 V 24 V 26 V 28 V -90
18 V 20 V 22 V 24 V 26 V 28 V
-60 -100
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 14 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Linearity

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 0
VD = 24 V, Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz -10 VD = 24 V, Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)
-40
-30 -50
-60
-40
-70
-80
-50
600 mA 1200 mA -90 600 mA 1200 mA

-60 -100
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 0
VD = 24 V, Freq. = 10 GHz, Temp. = 25 °C, Δf = 1 MHz -10 VD = 24 V, Freq. = 10 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)

-40
-30 -50
-60
-40
-70
-80
-50
600 mA 1200 mA 600 mA 1200 mA
-90
-60 -100
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

IM3 vs. Output Power vs. IDQ IM5 vs. Output Power vs. IDQ
0 0
VD = 24 V, Freq. = 11 GHz, Temp. = 25 °C, Δf = 1 MHz -10 VD = 24 V, Freq. = 11 GHz, Temp. = 25 °C, Δf = 1 MHz
-10
-20
-30
-20
IM3 (dBc)

IM5 (dBc)

-40
-30 -50
-60
-40
-70
-80
-50
600 mA 1200 mA -90 600 mA 1200 mA
-60 -100
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 15 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Linearity

IM3 vs. PAE vs. Output Power IM3 vs. PAE vs. Output Power
0 80 0 70
Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz VD = 24 V, Freq. = 7.9 GHz, Temp. = 25 °C, Δf = 1 MHz
-10 70 -10 60
600 mA 1200 mA
-20 IM3 60
-20 50
-30 50
IM3 (dBc)

IM3 (dBc)
PAE (%)

PAE (%)
-30 40
IM3
-40 40
-40 30
-50 18 V 20 V 22 V 30
24 V 26 V 28 V -50 20
-60 20
IDQ = 1200 mA PAE PAE
-70 10 -60 10

-80 0 -70 0
20 22 24 26 28 30 32 34 36 38 40 42 20 22 24 26 28 30 32 34 36 38 40 42
Output Power per Tone (dBm) Output Power per Tone (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 16 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Harmonics

2nd Harmonic vs. POUT vs. Temp. 2nd Harmonic vs. POUT vs. VD
0 0
VD = 24 V, IDQ = 1200 mA, F0 = 7.9 GHz IDQ = 1200 mA, Temp. = 25 °C, F0 = 7.9 GHz
-10 -10
Harmonic Level (dBc)

Harmonic Level (dBc)

-20 -20

-30 -30

-40 -40

-50 -50
- 40 C +25 C +85 C 20 V 24 V 28 V
-60 -60
22 24 26 28 30 32 34 36 38 40 42 44 46 26 28 30 32 34 36 38 40 42 44 46
Output Power (dBm) Output Power (dBm)

2nd Harmonic vs. POUT vs. Temp. 2nd Harmonic vs. POUT vs. VD
0 0
VD = 24 V, IDQ = 1200 mA, F0 = 10 GHz IDQ = 1200 mA, Temp. = 25 °C, F0 = 10 GHz
-10 -10
Harmonic Level (dBc)

Harmonic Level (dBc)

-20 -20

-30 -30

-40 -40

-50 -50
- 40 C +25 C +85 C 20 V 24 V 28 V
-60 -60
22 24 26 28 30 32 34 36 38 40 42 44 46 26 28 30 32 34 36 38 40 42 44 46
Output Power (dBm) Output Power (dBm)

2nd Harmonic vs. POUT vs. Temp. 2nd Harmonic vs. POUT vs. VD
0 0
VD = 24 V, IDQ = 1200 mA, F0 = 11 GHz IDQ = 1200 mA, Temp. = 25 °C, F0 = 11 GHz
-10 -10
Harmonic Level (dBc)

Harmonic Level (dBc)

-20 -20

-30 - 40 C +25 C +85 C -30

-40 -40

-50 -50
20 V 24 V 28 V
-60 -60
22 24 26 28 30 32 34 36 38 40 42 44 46 26 28 30 32 34 36 38 40 42 44 46
Output Power (dBm) Output Power (dBm)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 17 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Small Signal

Gain vs. Frequency vs. Temperature Gain vs. Frequency vs. VD

35 30

30 25
25
20
S21 (dB)

S21 (dB)
20
15
15 -40C +25C +85C
10
10 18 V 20 V 22 V 24 V 26 V 28 V

5 5
VD = 24 V, IDQ = 1200 mA Temp. = 25 °C, IDQ = 1200 mA
0 0
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Input Return Loss vs. Freq. vs. Temp. Input Return Loss vs. Frequency vs. VD
0 0
VD = 24 V, IDQ = 1200 mA Temp. = 25 °C, IDQ = 1200 mA
-5 -5
18 V 20 V 22 V 24 V 26 V 28 V

-10 -40C +25C +85C -10

S11 (dB)

S11 (dB)

-15 -15

-20 -20

-25 -25

-30 -30
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Output Return Loss vs. Freq. vs. Temp. Output Return Loss vs. Frequency vs. VD
0 0
VD = 24 V, IDQ = 1200 mA Temp. = 25 °C, IDQ = 1200 mA
-5 -5

-10 -10
S22 (dB)

S22 (dB)

-15 -15

-20 -20

-25 -40C +25C +85C -25

18 V 20 V 22 V 24 V 26 V 28 V
-30 -30
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 18 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Performance Plots – Small Signal

Gain vs. Frequency vs. IDQ Input Return Loss vs. Frequency vs. IDQ
30 0
VD = 24 V, Temp. = 25 °C
25 -5
600 mA 900 mA 1200 mA
20 -10

S11 (dB)
S21 (dB)

15 -15
600 mA 900 mA 1200 mA
10 -20

5 -25
VD = 24 V, Temp. = 25 °C
0 -30
7 8 9 10 11 12 7 8 9 10 11 12
Frequency (GHz) Frequency (GHz)

Output Return Loss vs. Frequency vs. IDQ

0
VD = 24 V, Temp. = 25 °C
-5

-10
S22 (dB)

-15

-20

-25
600 mA 900 mA 1200 mA
-30
6 7 8 9 10 11 12
Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 19 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Thermal and Reliability Information

Parameter Test Conditions Value Units
Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = +24 V, IDQ = 1200 mA, Pulsed 1.06 °C/W
VD (100 µs/10%), Freq = 9.75 GHz, PIN = 25 dBm,
Channel Temperature (TCH) (Under RF drive) (2) ID_Drive = 3.6 A, POUT = 44.9 dBm, PDISS = 53 W 141 °C

Thermal Resistance (θJC) (1) 1.86 °C/W

TBASE = 85°C, VD = +24V, IDQ = 1200 mA, CW,
PDISS = 28.8 W
Channel Temperature (TCH) (No RF) (2) 139 °C

Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = +24 V, IDQ = 1200 mA, CW, 1.84 °C/W
Freq = 9.75 GHz, PIN = 25 dBm, ID_Drive = 3 A,
Channel Temperature (TCH) (Under RF drive) (2) POUT = 43.6 dBm, PDISS = 50 W 177 °C

Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = +20 V, IDQ = 1200 mA, Pulsed 0.99 °C/W
VD (100 µs/10%), Freq = 9.75 GHz, PIN = 25 dBm,
Channel Temperature (TCH) (Under RF drive) (2) ID_Drive = 3.3 A, POUT = 44.2 dBm, PDISS = 37.3 W 122 °C

Thermal Resistance (θJC) (1) 1.88 °C/W

TBASE = 85°C, VD = +20V, IDQ = 1200 mA, CW,
PDISS = 24 W
Channel Temperature (TCH) (No RF) (2) 130 °C

Thermal Resistance (θJC) (1) TBASE = 85 °C, VD = +20 V, IDQ = 1200 mA, CW, 1.71 °C/W
Freq = 9.75 GHz, PIN = 25 dBm, ID_Drive = 3 A,
Channel Temperature (TCH) (Under RF drive) (2) POUT = 43.4 dBm, PDISS = 38 W 150 °C

Notes:
1. Thermal resistance measured to back of carrier plate slug. MMIC mounted to 20 mil CuMo using AuSn eutectic.
2. IR scan equivalent. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability
Estimates

Data Sheet Rev. D, May 2021 | Subject to change without notice - 20 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Power Dissipation and Max Gate Current

QPA1011D Ig_max vs. TCH vs. Stage
100
Stage 1
90
Stage 2

Gate Current Maximum (mA)

80 Total

70
60
50
40
30
20
10
0
120 130 140 150 160 170 180 190 200 210 220 230
Channel Temperature, TCH (°C)

PDISS vs. Frequency vs. VD PDISS vs. Frequency vs. VD

100 80
PIN = 25 dBm, IDQ = 1200 mA, Temp. = 85 °C PIN = 25 dBm, IDQ = 1200 mA, Temp. = 85 °C, CW
90 70
80 Pulsed VD : PW = 100 µS, DC = 10%
Power Dissipation (W)

Power Dissipation (W)

60
70
60 50

50 40
40 30
30
20
20
10 10
18 V 20 V 22 V 24 V 26 V 28 V 18 V 20 V 22 V 24 V 26 V 28 V
0 0
7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz) Frequency (GHz)

Data Sheet Rev. D, May 2021 | Subject to change without notice - 21 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Applications Circuit for Linear and Pulsed Operations

Note: VDELTA = VREF - VDET

 QPA1011D can be biased from either the top side or bottom side.
 VD1 and VD2 need to be tied together
 VD1 / VD2 and VREF / VDET have to be on the same side for VDELTA to work.
 Bypassing components required for the side(s) being biased.
 The extra bias components (R6, R17, C5 and C14) are required for optimum linearity.

Bias Up Procedure Bias Down Procedure

1. Set ID limit to 4000 mA, IG limit to 20 mA 1. Turn off RF supply
2. Apply −5 V to VG 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Apply +24 V to VD; ensure IDQ is approx. 0 mA 3. Set VD to 0 V
4. Adjust VG until IDQ = 1200 mA (VG ~ −2.0 V Typ.). 4. Turn off VD supply
5. Turn on RF supply 5. Turn off VG supply

Data Sheet Rev. D, May 2021 | Subject to change without notice - 22 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Evaluation Board (EVB) Layout Assembly for Pulsed Operation

Note: PCB is a multilayer

1. All 4 metal thicknesses are 0.5 oz
2. Upper core 1 is Rogers 4003C, 8 mil thick
3. Lower core 2 is 370HR, 6 mil thick
4. Pre-Preg is an epoxy coated glass fabric
5. Total finished PCB thickness is 25 ±3 mil
6. This EVB uses a copper-coined PCB for optimum thermal management under high dissipation long pulse and/or CW
conditions

Bill of Materials for EVB

Reference Des. Value Description Manuf. Part Number
C1, C5, C10, C14 10 uF CAP, 1206, 50 V, 20 %, X5R Various –
C2, C6, C9, C13 0.01 uF CAP, 0402, 50 V, 10 %, X7R Various –
R1, R12 5.1 Ohm RES, 0402, 50V, 5 %, SMT Various –
R2, R3, R6, R7, R11, R15, R16, R17 (1) 0 Ohm RES, 0402, 5 %, SMD Various –
R8, R9, R18, R19 25.5 K Ohm RES, 0402, 1/16W, 1%, 0402 Various –
L1, L2 (1) 0 Ohm RES, 0603, 1/10 W Various –
Note:
1. These components are acting as the jumpers for this EVB.

Data Sheet Rev. D, May 2021 | Subject to change without notice - 23 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Mechanical Information

Units: millimeters
Thickness: 0.10
Die x,y size tolerance: ± 0.050
Ground is backside of die

Bond Pad Description

Pad No. Symbol Pad Size (mm) Description
1 RF IN 0.090 x 0.190 RF Input; matched to 50 Ω, DC blocked
Gate voltage for stage 1 & 2, bias network is required; see
2, 12 VG12 0.074 x 0.091
Application Circuit on page 22 as an example.
Drain voltage for stage 1, bias network is required; see Application
3, 11 VD1 0.111 x 0.091
Circuit on page 22 as an example.
Drain voltage for stage 2, bias network is required; see Application
4, 10 VD2 0.374 x 0.212
Circuit on page 22 as an example.
5, 9 VREF 0.091 x 0.086 Reference voltage for Power detector
6, 8 VDET 0.091 x 0.086 Power detector voltage
7 RF OUT 0.090 x 0.190 RF Output; matched to 50 Ω, DC blocked

Data Sheet Rev. D, May 2021 | Subject to change without notice - 24 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Assembly Notes

Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.

Reflow process assembly notes:

• Use AuSn (80/20) solder and limit exposure to temperatures above 300 C to 3 – 4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.

Interconnect process assembly notes:

• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonic are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.

Data Sheet Rev. D, May 2021 | Subject to change without notice - 25 of 26 - www.qorvo.com
 QPA1011D
7.9 – 11.0 GHz 25 W GaN Power Amplifier

Handling Precautions
Parameter Rating Standard
Caution!
ESD – Human Body Model (HBM) 0B ANSI/ESDA/ JEDEC JS-001 ESD-Sensitive Device

RoHS Compliance
This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances
in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following
attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free

Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Tel: 1-844-890-8163
Web: www.qorvo.com
Email: customer.support@qorvo.com

Important Notice
The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained
herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained
herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for
Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by
such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED
HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER
EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE,
INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE.
Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical,
life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Copyright 2021 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.

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