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JR0405 Jiejie
JR0405 Jiejie
, Ltd
JR0405 Series Sensitive gate SCRs Rev.8.0
DESCRIPTION:
The JR0405 SCR series with the parallel resistor
12 12 3
between Gate and Cathode are especially 3
TO-126 TO-202-3
recommended for use on straight hair, igniter,
anion generator, etc.
12
1 2 3
3TO-220B TO-251-4R
Non-Insulated
MAIN FEATURES 2
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JR0405 Series JieJie Microelectronics CO. , Ltd
Average gate power dissipation(Tj=110℃) PG(AV) 0.2 W
NOTE 1:Tj=125℃ with RGK=1KΩ; Tj=110℃ without RGK.
STATIC CHARACTERISTICS
Symbol Parameter Value(MAX) Unit
VTM ITM=8A tp=380μs Tj=25℃ 1.5 V
IDRM Tj=25℃ 5 μA
VD=VDRM VR=VRRM
IRRM Tj=110℃ 200 μA
THERMAL RESISTANCES
Symbol Parameter Value Unit
TO-220B(Non-Ins)/
2.8
TO-220C
Rth(j-c) junction to case TO-251-4R/ ℃/W
6.5
TO-252-4R
TO-202-3/TO-126 7.2
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JR0405 Series JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
Dimensions
Ref. Millimeters Inches
E Typ. Typ.
A Min. Max. Min. Max.
B2 C A 2.10 2.30 2.50 0.083 0.091 0.098
B 0.66 0.76 0.86 0.026 0.030 0.034
B2 5.15 5.33 5.48 0.203 0.210 0.216
D2
E2
D 5.90 6.10 6.30 0.232 0.240 0.248
D2 5.30 REF 0.209 REF
E 6.40 6.60 6.80 0.252 0.260 0.268
G B C2
E2 4.83 REF 0.190 REF
TO-251-4R G 2.19 2.29 2.39 0.086 0.090 0.094
H 10.60 11.20 11.80 0.417 0.441 0.465
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JR0405 Series JieJie Microelectronics CO. , Ltd
V1
Min. Max. Min. Max.
L
A 2.10 2.50 0.083 0.098
A2 0 0.10 0 0.004
D B 0.66 0.86 0.026 0.034
H
V2
E1 V1 7° 7°
L2 V2 0° 6° 0° 6°
DETAIL A
TO-252-4R
Dimensions
Ref. Millimeters Inches
C3
V1
JIE
E 9.60 10.4 0.378 0.409
H
L2 G 2.54 0.1
H 28.0 29.8 1.102 1.173
L1 3.75 0.148
B L2 1.14 1.70 0.045 0.067
G C
L3 2.65 2.95 0.104 0.116
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JR0405 Series JieJie Microelectronics CO. , Ltd
Dimensions
m
A 2 0m H Ref. Millimeters Inches
3. Typ. Typ.
ax Min. Max. Min. Max.
M
Φ A 7.40 7.80 0.291 0.307
D
C
D 3.90 4.10 0.154 0.161
E 1.17 1.47 0.046 0.058
J
F 0.66 0.86 0.026 0.034
E
G 2.29 0.090
C
Dimensions
Ref. Millimeters Inches
A M Min. Typ. Max. Min. Typ. Max.
A 9.30 9.90 0.366 0.390
C 7.0 7.6 0.276 0.299
C
P H N 2.54 0.100
N
J O 1.20 1.50 0.047 0.059
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JR0405 Series JieJie Microelectronics CO. , Ltd
Dimensions
Ref. Millimeters Inches
m
3.6m Min. Typ. Max. Min. Typ. Max.
x
E Ma A A 4.40 4.60 0.173 0.181
Φ
C2
B 0.70 0.90 0.028 0.035
C 0.45 0.60 0.018 0.024
F
C2 1.23 1.32 0.048 0.052
L3
FIG.1: Maximum power dissipation versus RMS FIG.2: RMS on-state current versus case
on-state current temperature
P(w) IT(RMS) (A)
4.5 6
α=180°
5 TO-251-4R/
TO-252-4R/ TO-220C
TO-202-3 TO-220B
3.0 4 (Non-Ins)
1.5 2
TO-126
0 IT(RMS) (A) Tc (℃ )
0
0 1 2 3 4 5 0 25 50 75 100 125
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JR0405 Series JieJie Microelectronics CO. , Ltd
FIG.3: Surge peak on-state current versus FIG.4: On-state characteristics (maximum
number of cycles values)
ITSM (A) ITM (A)
40
tp=10ms
One cycle
36 Tj=Tjmax
10
30
24
18
1
Tj=25℃
12
6
Number of cycles 0.1 V TM (V)
0
1 10 100 1000 0 1 2 3 4 5
FIG.5: Non-repetitive surge peak on-state current FIG.6: Relative variations of gate trigger
for a sinusoidal pulse with width tp<10ms, and current, holding current and latching current
corresponging value of I 2 t (dI/dt < 50A/μs) versus junction temperature
ITSM (A), I2 t (A2 s) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃ )
300 3.0
2.0
IGT
dI/dt
1.5
IH&IL
10
1.0
I2 t
0.5
tp(ms) Tj (℃ )
1 0.0
0.01 0.1 1 10 -40 -20 0 20 40 60 80 100 120 140