AOT240L/AOB240L/AOTF240L

40V N-Channel MOSFET

General Description Product Summary

The AOT240L & AOB240L & AOTF240L uses Trench VDS 40V
MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85A
the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 2.9mΩ (< 2.6mΩ∗)
Power losses are minimized due to an extremely low
RDS(ON) (at VGS=4.5V) < 3.7mΩ (< 3.5mΩ∗)
combination of RDS(ON) and Crss.

100% UIS Tested

100% Rg Tested

Top View
TO-263 D
TO-220 TO-220F D2PAK
D

S S S S
D D
G G G
AOT240L AOTF240L AOB240L

Orderable Part Number Package Type Form Minimum Order Quantity

AOT240L TO-220 Tube 1000
AOB240L TO-263 Tape & Reel 800
AOTF240L TO-220F Tube 1000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol AOT240L/AOB240L AOTF240L Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 105 85
ID
Current G TC=100°C 82 60 A
Pulsed Drain Current C IDM 400
Continuous Drain TA=25°C 20
IDSM A
Current TA=70°C 16
C
Avalanche Current IAS 68 A
Avalanche energy L=0.1mH C EAS 231 mJ
TC=25°C 176 41
PD W
Power Dissipation B TC=100°C 88 20
TA=25°C 1.9
PDSM W
Power Dissipation A TA=70°C 1.2
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol AOT240L/AOB240L AOTF240L Units
Maximum Junction-to-Ambient A t ≤ 10s 15 15 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 65 65 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.85 3.6 °C/W
* Surface mount package TO263

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 AOT240L/AOB240L/AOTF240L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1 1.7 2.2 V
ID(ON) On state drain current VGS=10V, VDS=5V 400 A
VGS=10V, ID=20A 2.4 2.9
mΩ
TO220/TO220F TJ=125°C 3.7 4.7
VGS=4.5V, ID=20A
3 3.7 mΩ
TO220/TO220F
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
2.1 2.6 mΩ
TO263
VGS=4.5V, ID=20A
2.7 3.5 mΩ
TO263
gFS Forward Transconductance VDS=5V, ID=20A 78 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 1 V
IS Maximum Body-Diode Continuous Current G 105 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 3510 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 1070 pF
Crss Reverse Transfer Capacitance 68 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1 1.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 49 72 nC
Qg(4.5V) Total Gate Charge 22 32 nC
VGS=10V, VDS=20V, ID=20A
Qgs Gate Source Charge 9 nC
Qgd Gate Drain Charge 7 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1Ω, 10 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 38 ns
tf Turn-Off Fall Time 11 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 21 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 58 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOT240L/AOB240L/AOTF240L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
3.5V VDS=5V
7V 3V
80 80
10V

60 60
ID (A)

ID(A)
40 40 125°C

20 20 25°C
Vgs=2.5V

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 2

Normalized On-Resistance
1.8 VGS=10V
6 ID=20A
1.6
Ω)
RDS(ON) (mΩ

17
4 VGS=4.5V 1.4 5
2
1.2 VGS=4.5V
10
2 ID=20A
VGS=10V 1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A) 0
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage (Note E) 18Temperature
Figure 4: On-Resistance vs. Junction
(Note E)

8 1.0E+02
ID=20A
1.0E+01
6 40
1.0E+00 125°C
125°C
Ω)
RDS(ON) (mΩ

1.0E-01
IS (A)

4
1.0E-02
25°C
1.0E-03
2
25°C 1.0E-04

0 1.0E-05

2 4 6 8 10 0.0 0.20.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOT240L/AOB240L/AOTF240L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5000
VDS=20V
ID=20A
8 4000 Ciss

Capacitance (pF)
VGS (Volts)

6 3000

4 2000 Coss

2 1000
Crss

0 0
0 10 20 30 40 50 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 600
TJ(Max)=175°C
10µs TC=25°C
100.0 RDS(ON) 10µs 500
limited 100µs
1ms
ID (Amps)

Power (W)

10.0 400 17
10ms
DC 5
1.0 TJ(Max)=175°C 300 2
TC=25°C 10
0.1 200

0.0 100
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating 18
Figure 10: Single Pulse Power Rating Junction-to-Case
Area for AOT240L and AOB240L (Note F)
for AOT240L and AOB240L (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=0.85°C/W 40
1

0.1 PD
Single Pulse
Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F)

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 AOT240L/AOB240L/AOTF240L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000.0 600
TJ(Max)=175°C
10µs TC=25°C
RDS(ON) 500
100.0
100µs
400
ID (Amps)

Power (W)
10.0 1ms
10ms
300
1.0 DC
TJ(Max)=175°C
200
TC=25°C
0.1
100

0.0 0
0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts)
Pulse Width (s) 17
Figure 12: Maximum Forward Biased Figure 13: Single Pulse Power Rating Junction-to-Case
5
Safe Operating Area for AOTF240L for AOTF240L (Note F)
2
10
10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=3.6°C/W
1
0
18

0.1
PD
Single Pulse Ton
T
0.01
40
1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F)

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 AOT240L/AOB240L/AOTF240L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1000 200
IAR (A) Peak Avalanche Current

Power Dissipation (W)

150
TA=25°C
TA=100°C

100 100
TA=150°C

TA=125°C 50

10 0
1 10 100 1000 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ °C)
TCASE (°
Figure 15: Single Pulse Avalanche capability Figure 16: Power De-rating (Note F)
(Note C)

120 1000
TA=25°C
100
Current rating ID(A)

80 100
17
Power (W)

5
60
2
40 10
10

20

0 1
0 25 50 75 100 125 150 175 1E-05 0.001 0.1 10 0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 17: Current De-rating (Note F) Figure 18: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=65°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOT240L/AOB240L/AOTF240L

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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