FE3006NES_Datasheet

Three-segment LED linear constant current control trip with low THD and high
Power Factor.

DESCRIPTION
FE3006NES is a three-segment LED linear constant current control IC with high power factor. It integrates
700V high voltage MOSFET, and adopts unique and innovative device process technology, with superior
resistance to avalanche breakdown and surge. FE3006NES built-in over-temperature protection function to
improve system application reliability. The peripheral can accurately set the output LED current through the
external resistor, and it can reduce THD by optimizing the voltage reference when the segment is turned on.
FE3006NES integrates the input line voltage compensation function. When the input line voltage is too high,
FE3006NES will reduce the output current according to the external compensation resistor to ensure that the
input power does not change with the line voltage.
It internally optimizes the wiring and facilitates routing when multiple chips are connected in parallel, saving
jumper resistance. FE3006NES expands the application to meet the fractional harmonic requirements.
It is mainly used in the fields of LED lighting, architectural lighting engineering, etc. The system structure is
simple, the peripheral components are few, the PCB traces are simple, and the solution cost is low.

FEATURES APPLICATION
◆ Build-in 700V high-voltage MOS ◆ GU10/E27 Bulb lighting
◆ No need Electrolytic capacitors and magnetic elements ◆ Panel lighting
◆ PF＞0.95，THD＜20% ◆ Various LED Lighting
◆ Multi-chip parallel application eliminates the need for 0R
jumper resistors
◆ Multi-lamp parallel without oscillation
◆ Input line voltage compensation function
◆ No magnetic components for EMI applications
◆ Built-in over temperature protection
◆ Package: ESOP8
◆ With constant power regulation
TYPICAL APPLICATION CIRCUIT

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ORDERING INFORMATION
Part No. Package Hazardous Substance Control Packing
FE3006NES ESOP8 Halogen free 4000pcs/Tape

BLOCK DIAGRAM

PIN CONFIGURATIONS

PIN DESCRIPTION
Pin No. Pin Name Pin Description
1 OUT3 Constant current output port 3
2,7 NC No connection
3,5 OUT2 Constant current output port 2
4 OUT1 Power supply input and constant current output port 1
6 REXT Output current setting port
8 VT Constant power setting port
Substrate GND Ground

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ABSOLUTE MAXIMUM RATINGS (Unless otherwise stated, TA=25℃)
Characteristics Symbol Rating Unit
OUT voltage VOUT -0.5~700 V
REXT voltage VREXT -0.5~7 V
VT voltage VT -0.5~7 V
PN junction to ambient thermal resistance (Note 2) RθJA 65 °C/W
Power consumption (Note 3) PD 1.25 W
Operating junction temperature TJ -40~ 150 °C
Storage temperature TSTG -55~ 150 °C
HBM ESD VESD 2 KV
Note 1: The maximum output power is limited to chip junction temperature, the maximum limit means that the
chip can be damaged beyond the scope of the work. The maximum limit value is the work in the limit
parameter range, the device function is normal, but it is not completely guaranteed to meet the individual
performance indexes.
Note 2: RθJA measures the flow of water according to the JEDEC JESD51 thermal measurement standard on
the single-layer thermal conductivity test board under TA=25°C.
Note 3: The maximum power consumption is decreased when temperature rising, this depends on TJMAX ,
RθJA and TA Maximum allowable power consumption is PD = (TJMAX-TA)/ RθJA or the lower value of the value
given in the limit range .

ELECTRICAL CHARACTERISTICS (Unless otherwise stated, TA=25℃)

Characteristics Symbol Test condition Min. Typ. Max. Unit
OUT withstand voltage VOUT_BV - 700 - - V
VOUT1=20V, connect VT to
Quiescent current IDD - 0.16 - mA
GND, VREXT=2.5V
REXT port first voltage VREXT_1 VOUT1=20V, REXT=200Ω - 0.702*V VT - V
VOUT1=20V, VOUT2=15V
REXT port second voltage VREXT_2 - 0.715*V VT - V
REXT=200Ω
VOUT1=20V, VOUT3=15V
REXT port third voltage VREXT_3 - 0.726*V VT - V
REXT=200Ω
Constant power compensation starting
VVT_ON - - 2.6 - V
voltage
Initial point of the negative
TSC - - 145 - °C
temperature compensation (Note 6)
Note 4: The electrical operating parameters define the DC/AC parameters of the device within the working
range and under test conditions that ensure a specific performance indicator. The specification does not
guarantee the accuracy of the parameters that are not given the upper and lower limit values, but the typical
values reflect the performance of the device.
Note 5: The minimum and maximum parameter range of the datasheet is guaranteed by the test, and the
typical value is guaranteed by design, test or statistical analysis.
Note 6: Initial point of the negative temperature compensation is chip internal set temperature 145°C.
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FUNCTION DESCRIPTION

FE3006NES is a three-segment high power factor LED linear constant current control chip that operates in a
segmented automatic switching mode. The chip integrates constant power and over-temperature protection
functions to improve system application reliability.
 Output current
FE3006NES has three current drive ports, and the output current of each port is adjusted by an external
resistor R. The output currents of each switch are turned on as follows: IOUT1=0.702*VVT/REXT,
IOUT2=0.715*VVT/REXT, IOUT3=0.726*VVT/REXT, The system output current is equal to the effective value after
the current is superimposed on each port., where VVT is the voltage of VT.
 Input line voltage compensation function
The change of the input voltage is detected through VT. When the input voltage increases, the input current
will be reduced; when the input voltage decreases, the input current will be increased. Therefore, the input
power of the system does not change with the fluctuation of the input line network voltage, and basically
maintains constant. When the VVT voltage is greater than 2.6V, the VREXT reference voltage decreases as the
VVT voltage increases. The modulation amplitude of the output current is set by the pull-up and pull-down VT
external resistors. The relationship is as follows:
VREXT1=(24.34 - 8.167 * VVT) * 0.702
VREXT2=(24.34 - 8.167 * VVT) * 0.715
VREXT3 =(24.34 - 8.167 * VVT) * 0.729
VVT=VIN*RL/(RH+RL)
VIN is the voltage after the rectifier bridge, RH is the VT pull-up resistor, and RL is the VT pull-down resistor.
The above formula is only valid when VVT>2.6V.
 Output LED lamp bead drop and lamp bead ratio design
It is recommended that FE3006NES OUT1~OUT3 port lamp bead voltage drop ratio is 8:4:3 (using 18V lamp
bead, 230Vac input system as an example), which can make the system get lower THD, better light
efficiency,stronger surge capacity and higher power factor.
 System efficiency calculation
The system operating efficiency of the FE3006NES is calculated as follows:

D1, D2, and D3 are duty cycles of OUT1, OUT2, and OUT3, respectively, during the single-wire period.
ILED1, ILED2, and ILED3 are constant current output currents when OUT1, OUT2, and OUT3 are turned on,
respectively.
VLED1, VLED2, and VLED3 are the lamp voltages when OUT1, OUT2, and OUT3 are turned on, respectively.
 Heat dissipation measures
FE3006NES has internal temperature compensation circuit, to avoid lower current under high temperature, the
system uses excellent heat dissipation process. It guarantees the chip operates in proper temperature range,
common heat dissipation measures are shown below:

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1) The system uses aluminum substrate.
2) Increase the copper covered area of FE3006NES substrate;
3) Enlarge heat dissipation base of the lamps.
FE3006NES supports chip parallel applications.
If the system output power is too high and the chip temperature is high. Multiple FE3006NES chips can be
used in parallel.
 Over temperature adjustment
When the interior temperature of the LED lamp is over high, there will be strong light failure and the life span of
the LED will be decreased. FE3006NES integrates temperature compensation, when the interior of the chip
exceeds 145ºC, the output current will be decreased automatically to lower down the interior temperature of the
LED and improve system reliability.

Encapsulation Soldering Process

FE3006NES follow the European RoHs standard, solder temperature in encapsulation soldering
process follows J-STD-020 standard.

Encapsulation Volume Volume Volume

Thickness mm3<350 mm3<350~2000 mm3≥2000
< 1.6mm 260+0°C 260+0°C 260+0°C
1.6mm~2 .5mm 260+0°C 250+0°C 245+0°C
≥2.5mm 250+0°C 245+0°C 245+0°C

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PACKAGE OUTLINE
ESOP8

Symbol Min(mm) Max(mm)

A 1.25 1.95
A1 - 0.1
A2 1.25 1.75
b 0.25 0.7
c 0.1 0.35
D 4.6 5.3
D1 3. 12(REF)
E 3.7 4.2
E1 5.7 6.4
E2 2.34(REF)
e 1.270(BSC)
L 0.2 1.5
Θ 0° 10°

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SEMICONDUCTOR DEVICES OPERATE NOTES
Electrostatic charges may exist in many things. Please take following preventive measures to prevent effectively the
semiconductor electric circuit as a result of the damage which is caused by discharge:
 The operator must put on wrist strap which should be earthed to against electrostatic.
 Equipment cases should be earthed.
 All tools used during assembly, including soldering tools and solder baths, must be earthed.
 Semiconductor devices should be packed in antistatic/conductive containers for transportation.

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