MAC4DCM, MAC4DCN

Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
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Features
• Small Size Surface Mount DPAK Package TRIACS
• Passivated Die for Reliability and Uniformity
4.0 AMPERES RMS
• Blocking Voltage to 800 V
600 − 800 VOLTS
• On−State Current Rating of 4.0 A RMS at 108°C
• High Immunity to dv/dt − 500 V/s at 125°C
• High Immunity to di/dt − 6.0 A/ms at 125°C MT2 MT1
• Epoxy Meets UL 94 V−0 @ 0.125 in G
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V MARKING
• Pb−Free Packages are Available DIAGRAMS

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 4

DPAK YWW
Rating Symbol Value Unit CASE 369C AC
1 2 STYLE 6 4DCxG
Peak Repetitive Off−State Voltage VDRM, V 3
(Note 1) (TJ = −40 to 125°C, Sine Wave, VRRM
50 to 60 Hz, Gate Open)
MAC4DCM 600 4
MAC4DCN 800
On−State RMS Current IT(RMS) 4.0 A DPAK−3 YWW
(Full Cycle Sine Wave, 60 Hz, CASE 369D AC
TC = 108°C) STYLE 6 4DCxG
1
2
Peak Non-Repetitive Surge Current ITSM 40 A 3
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C) Y = Year
WW = Work Week
Circuit Fusing Consideration I2t 6.6 A2sec AC4DCx = Device Code
(t = 8.3 msec) x= M or N
G = Pb−Free Package
Peak Gate Power PGM 2.0 W
(Pulse Width ≤ 10 sec, TC = 108°C)
Average Gate Power PG(AV) 1.0 W PIN ASSIGNMENT
(t = 8.3 msec, TC = 108°C)
1 Main Terminal 1
Peak Gate Current IGM 4.0 A 2 Main Terminal 2
(Pulse Width ≤ 20 sec, TC = 108°C)
3 Gate
Peak Gate Voltage VGM 5.0 V
(Pulse Width ≤ 20 sec, TC = 108°C) 4 Main Terminal 2

Operating Junction Temperature Range TJ −40 to 125 °C

Storage Temperature Range Tstg −40 to 150 °C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Stresses exceeding Maximum Ratings may damage the device. Maximum dimensions section on page 2 of this data sheet.
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Preferred devices are recommended choices for future use
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking and best overall value.
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.

© Semiconductor Components Industries, LLC, 2009 1 Publication Order Number:

January, 2009 − Rev. 7 MAC4DCM/D
 MAC4DCM, MAC4DCN

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, − Junction−to−Case RJC 3.5 °C/W
− Junction−to−Ambient RJA 88
− Junction−to−Ambient (Note 2) RJA 80
Maximum Lead Temperature for Soldering Purposes (Note 3) TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current IDRM, mA
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM − − 0.01
TJ = 125°C − − 2.0
ON CHARACTERISTICS
Peak On−State Voltage (Note 4) (ITM = ±6.0 A) VTM − 1.3 1.6 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) IGT mA
MT2(+), G(+) 8.0 12 35
MT2(+), G(−) 8.0 18 35
MT2(−), G(−) 8.0 22 35

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGT V

MT2(+), G(+) 0.5 0.8 1.3
MT2(+), G(−) 0.5 0.8 1.3
MT2(−), G(−) 0.5 0.8 1.3

Gate Non−Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) VGD 0.2 0.4 − V
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) TJ = 125°C
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH 6.0 22 35 mA
Latching Current (VD = 12 V, IG = 35 mA) IL mA
MT2(+), G(+) − 30 60
MT2(+), G(−) − 50 80
MT2(−), G(−) − 20 60
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current di/dt(c) 6.0 8.4 − A/ms
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/sec,
Gate Open, TJ = 125°C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber)
(See Figure 16)
Critical Rate of Rise of Off−State Voltage dv/dt 500 1700 − V/s
(VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

ORDERING INFORMATION
Device Package Type Package Shipping†
MAC4DCM−001 DPAK−3 369D 75 Units / Rail
MAC4DCM−1G DPAK−3 369D 75 Units / Rail
(Pb−Free)
MAC4DCMT4 DPAK 369C 2500 / Tape & Reel
MAC4DCMT4G DPAK 369C 2500 / Tape & Reel
(Pb−Free)
MAC4DCN−001 DPAK−3 369D 75 Units / Rail
MAC4DCN−1G DPAK−3 369D 75 Units / Rail
(Pb−Free)
MAC4DCNT4 DPAK 369C 2500 / Tape & Reel
MAC4DCNT4G DPAK 369C 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 MAC4DCM, MAC4DCN

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off−State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off−State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On−State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 −

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (−) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT − + IGT

(−) MT2 (−) MT2

Quadrant III (−) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

−
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

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 MAC4DCM, MAC4DCN

125 6.0

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) dc
180°
5.0
α 120°
120  = 30°
α
60° 90°
4.0
90°  = CONDUCTION ANGLE
115 3.0
α
α 2.0 60°
110 120°  = 30°
 = CONDUCTION ANGLE 1.0
180°
dc
105 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 2.0 3.0 4.0
IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation

I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)

100 1.0

r(t) , TRANSIENT RESISTANCE (NORMALIZED)

TYPICAL @ TJ = 25°C

MAXIMUM @ TJ = 125°C
10

0.1
MAXIMUM @ TJ = 25°C ZJC(t) = RJC(t)Sr(t)
1.0

0.1 0.01
0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 10 k
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) t, TIME (ms)

Figure 3. On−State Characteristics Figure 4. Transient Thermal Response

60 1.2
VGT, GATE TRIGGER VOLTAGE(VOLTS)
I GT, GATE TRIGGER CURRENT (mA)

50 1.0

Q2 Q1
40 0.8

Q3
30 0.6
Q2 Q3

20 0.4
Q1

10 0.2

0 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature Junction Temperature

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 MAC4DCM, MAC4DCN

60 120

50 100
IH , HOLDING CURRENT (mA)

IL, LATCHING CURRENT (mA)

Q2
40 MT2 POSITIVE 80

30 60
Q1
20 40
MT2 NEGATIVE
Q3
10 20

0 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Holding Current versus Figure 8. Typical Latching Current versus
Junction Temperature Junction Temperature

10 K 15 K
TJ = 125°C TJ = 125°C

8.0 K VPK = 400 V

STATIC dv/dt (V/ s)

STATIC dv/dt (V/  s)

10 K
6.0 K 600 V
VPK = 400 V

600 V 800 V
4.0 K 800 V
5.0 K

2.0 K

0 0
100 1000 10 K 100 1000 10 K
RG-MT1, GATE-MT1 RESISTANCE (OHMS) RG-MT1, GATE-MT1 RESISTANCE (OHMS)

Figure 9. Exponential Static dv/dt versus Figure 10. Exponential Static dv/dt versus
Gate−MT1 Resistance, MT2(+) Gate−MT1 Resistance, MT2(−)

10 K 14 K

12 K
8.0 K TJ = 100°C GATE OPEN GATE OPEN
10 K TJ = 100°C
STATIC dv/dt (V/  s)
STATIC dv/dt (V/ s)

6.0 K 8.0 K
110°C 110°C
6.0 K
4.0 K
4.0 K 125°C
125°C
2.0 K
2.0 K

0 0
400 500 600 700 800 400 500 600 700 800
VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS)

Figure 11. Exponential Static dv/dt versus Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(+) Peak Voltage, MT2(−)

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 MAC4DCM, MAC4DCN

10 K 14 K

12 K GATE OPEN
8.0 K GATE OPEN VPK = 400 V
VPK = 400 V 10 K
STATIC dv/dt (V/ s)

STATIC dv/dt (V/ s)

6.0 K
8.0 K 600 V
600 V

4.0 K 6.0 K
800 V
800 V
4.0 K
2.0 K
2.0 K

0 0
100 105 110 115 120 125 100 105 110 115 120 125
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+) versus Junction Temperature, MT2(−)

100
VPK = 400 V
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/  s)

TJ = 125°C 100°C 75°C

10

1
f=
tw 2 tw
6f ITM
(di/dt)c =
VDRM 1000

1.0
0 5.0 10 15 20 25 30 35
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

LL 1N4007
200 VRMS
ADJUST FOR MEASURE
ITM, 60 Hz VAC I
TRIGGER CONTROL

CHARGE
TRIGGER CONTROL -
CHARGE 200 V
+
MT2
1N914 51 
NON‐POLAR MT1
CL G

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

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 MAC4DCM, MAC4DCN

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE O

NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
B C 2. CONTROLLING DIMENSION: INCH.

V R E INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A
E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3
U G 0.180 BSC 4.58 BSC
K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F J L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
L H S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−
D 2 PL V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2

SOLDERING FOOTPRINT*

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 MAC4DCM, MAC4DCN

PACKAGE DIMENSIONS

DPAK−3
CASE 369D−01
ISSUE B

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V R E 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3 D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
SEATING
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
J
F V 0.035 0.050 0.89 1.27
H Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 6:
G 0.13 (0.005) M T PIN 1. MT1
2. MT2
3. GATE
4. MT2

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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