Ordering number:EN462E

NPN Epitaxial Planar Silicon Transistor

2SC2078

27MHz RF Power Amplifier Applications

Package Dimensions
unit:mm
2010C
[2SC2078]

1 : Base
JEDEC : TO-220AB
2 : Collector
EIAJ : SC-46
Specifications 3 : Emitter

Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 80 V
Collector-to-Emitter Voltage VCER RBE=150Ω 75 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 3 A
Collector Current (Pulse) ICP 5 A
Collector Dissipation PC 1 .2 W
Tc=50˚C 10 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C

Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0 10 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 10 µA
DC Current Gain hF E VCE=5V, IC=0.5A 25* 200*
Gain-Bandwidth Product fT VCE=10V, IC=0.1A 100 150 MHz
Output Capacitance Cob VCB=10V, f=1MHz 45 60 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.1A 0 .1 5 0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.1A 0 .9 1.2 V

* : The 2SC2078 are classified by 0.5A hFE as follows : 25 B 50 40 C 80 60 D 120 100 E 20 0

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/D251MH/4147KI/3145KI/2274KI No.462–1/4
 2SC2078

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Base Saturation Voltage V(BR)CBO IC=100µA, IB=0 80 V
Collector-to-Emitter Saturation Voltage V(BR)CER IC=1mA, RBE=150Ω 75 V
Emitter-to-Base Saturation Voltage V(BR)EBO IE=100µA, IC=0 5 V
[At specified test circuit]
Output Power PO VCC=12V, f=27MHz, Pi=0.2W 4 .0 W
Power Efficiency η 60 %

27MHz Output Power Test Circuit

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