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FT08...D

SURFACE MOUNT TRIAC

DPAK
(Plastic)
On-State Current Gate Trigger Current
8 Amp < 5 mA to < 50 mA

Off-State Voltage
200 V ÷ 600 V
MT2

MT1 This series of TRIACs uses a high performance

MT2 PNPN technology.

G These devices are intended for AC control

applications using surface mount technology.

The high commutation performances combined with

high sensitivity, make them perfect in all applications
like solid state relays, home appliances, power tools,
small motor drives...

Absolute Maximum Ratings, according to IEC publication No. 134

SYMBOL PARAMETER CONDITIONS Min. Max. Unit

IT(RMS) RMS On-state Current All Conduction Angle, TC = 110 ºC 8 A
ITSM Non-repetitive On-State Current Half Cycle, 60 Hz 84 A
ITSM Non-repetitive On-State Current Half Cycle, 50 Hz 80 A
I2t Fusing Current tp = 10 ms, Half Cycle 36 A 2s
IGM Peak Gate Current 20 µs max. 4 A
PGM Peak Gate Dissipation 20 µs max. 10 W
PG(AV) Gate Dissipation 20 ms max. 1 W
di/dt Critical rate of rise of on-state current IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz 50 A/µs
Tj = 125 ºC
Tj Operating Temperature Range -40 +125 ºC
Tstg Storage Temperature Range -40 +150 ºC
TL Lead Temperature for soldering 10s max. 260 ºC

SYMBOL PARAMETER VOLTAGE Unit

B D M
VDRM Repetitive Peak Off State 200 400 600 V
VRRM Voltage

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FT08...D

SURFACE MOUNT TRIAC

Electrical Characteristics
SYMBOL PARAMETER CONDITIONS Quadrant SENSITIVITY Unit
07 08 11 14 16
IGT (1)
Gate Trigger Current VD = 12 VDC , RL = 30Ω Q1÷Q3 MAX 5 10 25 35 50 mA
Tj = 25 ºC 7 mA
IDRM /IRRM Off-State Leakage Current VR = VRRM , Tj = 125 ºC MAX 1 mA
Tj = 25 ºC MAX 5 µA
Vto (2) Threshold Voltage Tj = 125 ºC MAX 0.85 V
Rd(2) Dynamic Resistance Tj = 125 ºC MAX 60 mΩ
VTM (2) On-state Voltage IT = 11 Amp, tp = 380 µs, Tj = 25 ºC MAX 1.55 V
VGT Gate Trigger Voltage VD = 12 VDC , RL = 30Ω, Tj = 25 ºC Q1÷Q3 MAX 1.3 V
VGD Gate Non Trigger Voltage VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q3 MIN 0.2 V
IH (2) Holding Current IT = 100 mA , Gate open, Tj = 25 ºC MAX 10 15 25 35 50 mA
IL Latching Current IG = 1.2 IGT, Tj = 25 ºC Q1,Q3 MAX 10 20 25 50 80 mA
Q2 MAX 15 30 50 60 80
dv / dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open MIN 20 100 200 400 250 V/µs
Tj = 125 ºC

(dI/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs Tj = 125 ºC MIN 3.5 5.4 9 9 9 A/ms
(dv/dt)c= 10 V/µs Tj = 125 ºC MIN 1.8 2.8 4.5 4.5 4.5
without snubber Tj = 125 ºC MIN - - - 4.5 4.5
Rth(j-c) Thermal Resistance 1.6 ºC/W
Junction-Case
Thermal Resistance 70
Rth(j-a) Junction-Ambient
ºC/W

(1) Minimum IGT is guaranted at 5% of IGT max.

(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PART NUMBER INFORMATION

F T 08 08 B D 00 TR
FAGOR PACKAGING
FORMING
SCR
CASE
VOLTAGE
CURRENT
SENSITIVITY

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FT08...D

SURFACE MOUNT TRIAC

Fig. 1a: Maximum power dissipation versus Fig. 1b: Maximum power dissipation versus
RMS on-state current (FT0807.D, FT0808.D). RMS on-state current (FT0811.D, FT0814.D).

P (W) P (W)
10 10
α = 180 º α = 180 º

8 8
α = 120 º α = 120 º

6 α = 90 º 6 α = 90 º

4 α = 60 º 4 α = 60 º

α = 30 º α = 30 º
2 180 º 2 180 º
α α
α α

0 IT(RMS)(A) 0 IT(RMS)(A)
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8

Fig. 2: Correlation between maximum power dissipation Fig. 3: RMS on-state current versus ambient
and maximum allowable temperatures (Tamb and Tcase) temperature
for different thermal resistances heatsink + contact.

P (W) T case (ºC) I T(RMS) (A)

10 9
Rth=10 ºC/W Rth=5 ºC/W Rth(j-a) = Rth(j-c)
-110
8
8 Rth=0 ºC/W
7

6
6 -115
5 α = 180 º
Rth=15 ºC/W

4
4
-120 3 Rth(j-a) = 55 ºC/W
S(Cu) = 1.75 cm2

2 2

α = 180 º 1

0 -125 Tamb (ºC) 0 Tamb (ºC)

0 25 50 75 100 125 0 25 50 75 100 125

Fig. 4: Relative variation of thermal impedance Fig. 5: Relative variation of gate trigger current
junction to case versus pulse duration. and holding current versus junction temperature
(typical values).
K = [Zth(j-c) / Rth (j-c)] IGT, IH (Tj) / IGT, IH (Tj = 25 ºC)
1.0 2.5

2.0
0.5 IGT

1.5

1.0 IH

0.2
0.5

0.1 tp (s) 0.0 Tj (ºC)

1E-3 1E-2 1E-1 1E+0 -40 -20 0 20 40 60 80 100 120 140

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FT08...D

SURFACE MOUNT TRIAC

Fig. 7: Non repetitive surge peak on-state
Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width:
current versus number of cycles. tp < 10 ms, and corresponding value of I2t.

I TSM (A) ITSM(A). I2t (A2s)

80 500
Tj initial = 25 ºC Tj initial = 25 ºC
F = 50 Hz
70
ITSM
60

50 100
40
I2 t
30

20

10

0 Number of cycles 10 tp(ms)

1 10 100 1000 1 2 5 10

Fig. 8: On-state characteristics (maximum Fig. 9: Thermal resistance junction to ambient

values). versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).

ITM(A) Rth(j-a) (ºC/W)

100.0 100

80
Tj = Tj max. Tj max
10.0 Vto = 0.8 V
Rd = 60 mΩ
60

Tj = 25 ºC 40
1.0

20

0.1 VTM(V) 0 S(Cu) (cm2)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 2 4 6 8 10 12 14 16 18 20

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FT08...D

SURFACE MOUNT TRIAC

PACKAGE MECHANICAL DATA DPAK TO 252-AA

DIMENSIONS
REF. Milimeters
8º±2º
Min. Nominal Max.
A 2.18 2.3±0.18 2.39
A1 0 0.12 0.127
A b 0.64 0.75±0.1 0.89
ø1x0.15 E1
E c2 c 0.46 0.61
L3
c1 0.46 0.56
8º±2º 8º±2º c2 0.8±0.013
D1 D 5.97 6.1±0.1 6.22
D
H D1 5.21 5.52
1.6 E 6.35 6.58±0.14 6.73
8º±2º 8º±2º
L4 E1 5.20 5.36±0.1 5.46
L e 2.28BSC
e b L2 H 9.40 9.90±0.15 10.41
4.57 Typ. A1 L 1.40 1.78
1.067±0.013 L1 2.55 2.6±0.05 2.74
L2 0.46 0.5±0.013 0.58
L3 0.89 1.20±0.05 1.27
L4 0.64 0.83±0.1 1.02

Marking: type number

Weight: 0.2 g

FOOT PRINT

6.7

6.7

1.6 1.6
2.3 2.3

Jun - 02