FEP16DT thru FEP16JT ®

FEP16DT/FEP16GT/FEP16JT Pb
Pb Free Plating Product
16 Ampere Heatsink Common Cathode Fast Recovery Half Bridge Rectifiers

Features TO-220AB Unit:mm

9.90±0.20 0 4.50±0.20
 Latest GPP technology with super fast recovery time
.2
±0
0
.6
φ3 1.30±0.20
 Low forward voltage drop
 High current capability

6.50±0.20
 Low reverse leakage current

15.70±0.20

2.80±0.20
 High surge current capability

9.19±0.20
Application
 Automotive Inverters and Solar Inverters
 Plating Power Supply,SMPS,Motor Control and UPS 1.27±0.20
2.40±0.20

13.08±0.20
 Car Audio Amplifiers and Sound Device Systems

3.02±0.20
1.52±0.20

Mechanical Data
 Case: Heatsink TO-220AB/TO-220CE 2.54typ
0.80±0.20

 Epoxy: UL 94V-0 rate flame retardant 2.54typ 0.50±0.20

 Terminals: Solderable per MIL-STD-202

method 208
Case Case Case
 Polarity: As marked on diode body Case

 Mounting position: Any Positive Negative Doubler Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity
 Weight: 2.2 gram approximately Suffix "G" Suffix "GA" Suffix "GD" Suffix "GS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

SYMBOL FEP16DT FEP16GT FEP16JT UNIT

Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V

Maximum RMS Voltage VRMS 140 280 420 V

Maximum DC Blocking Voltage VDC 200 400 600 V

Maximum Average Forward Rectified

o IF(AV) 16.0 A
Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM 175 150 A
(JEDEC method)

Maximum Instantaneous Forward Voltage

VF 0.98 1.3 1.7 V
@ 8.0 A

Maximum DC Reverse Current @TJ=25 C

o
5.0 uA
o IR
At Rated DC Blocking Voltage @TJ=125 C 100 uA

Maximum Reverse Recovery Time (Note 1) Trr 35 nS

Typical junction Capacitance (Note 2) CJ 90 pF

o
Typical Thermal Resistance (Note 3) R JC 2.2 C/W
Operating Junction and Storage -55 to + 150 o
TJ, TSTG C
Temperature Range

NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.

Rev.06 Page 1/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 FEP16DT thru FEP16JT ®

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

16 200
Pulse Width 8.3ms

PEAK FORWARD SURGE CURRENT,

Single Half-Sire-Wave
AVERAGE FORWARD RECTIFIED

175 (JEDEC Method)

13
CURRENT, AMPERES

150
10

AMPERES
125

8 100

75
6

50
4
60 Hz Resistive or 25
Inductive load
0 0
0 50 100 150 1 10 100

o NUMBER OF CYCLES AT 60Hz

CASE TEMPERATURE, C

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
1000
IINSTANTANEOUS FORWARD CURRENT,

80
INSTANTANEOUS REVERSE CURRENT,

FEP16DT
o
FEP16GT TJ=125 C
100
MICROAMPERES

8
AMPERES

10

o
FEP16JT TJ=25 C
0.1
1

o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100

INSTANTANEOUS FORWARD VOLTAGE, PERCENT OF RATED PEAK REVERSE VOLTAGE,%

VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000 o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
JUNCTION CAPACITANCE, pF

100

10
0.1 1.0 4.0 10 100

REVERSE VOLTAGE, VOLTS

Rev.06 Page 2/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/