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AE-I Class Test (ETEC-203) Dec 2021 ECE 2nd Shift
AE-I Class Test (ETEC-203) Dec 2021 ECE 2nd Shift
1. Name *
siddhant srivastava
2. E-mail id *
siddhantshrivastava030@gmail.com
3. Enrollment No. *
04396302820
4. Class S.No. *
36
5. Branch *
ECE-E (Evening)
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Dissipate heat
Facilitate connections
None of these
L across thyristor
RC across thyristor
R across thyristor
RL across thyristor
several MΩ
a few hundred Ω
kΩ
AB
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Dual
Push Pull
Symmetrical
Differential
11. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS =
20mA and VGS(off) = -5 V. The value of the drain current is ………… *
(2 Points)
0 mA
40 mA
20 mA
10 mA
Two
Four
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12/28/21, 9:30 AM AE-I Class Test (ETEC-203) Dec 2021 ECE 2nd Shift
0%
10%
50%
25%
At zero potential
Negative
Positive
None
16. When the JFET is no longer able to control the current, this point is called
the ……… *
(1 Point)
breakdown region
depletion region
saturation point
pinch-off region
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Collector efficiency
Symmetrical
Single-ended
Reciprocating
Differential
20. When applied input voltage varies the resistance of a channel, the result
is called………….. *
(1 Point)
field effect
saturation
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cutoff
polarization
AB
Impedance matching
Two transistors
Three transistors
One transistor
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24.
The gate of a JFET is ………… biased
*
(1 Point)
reverse
forward
Amplifying a circuit
Amplifying a circuit
26. In class A operation, the operating point is generally located ………. of the
d.c. load line. *
(1 Point)
At the middle
At saturation point
27. If the reverse bias on the gate of a JFET is increased, then width of the
conducting channel ………….. *
(1 Point)
is increased
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none
is decreased
28. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion
layers ……… *
(1 Point)
none
29. A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the drain
current is ……… *
(2 Points)
ID(on)
0 mA
maximum
IDSS
Inductive load
Resistive load
R-L Load
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