NIKO-SEM N-Channel Enhancement Mode

PK698SA
PDFN 5x6P
Field Effect Transistor
Halogen-Free & Lead-Free

PRODUCT SUMMARY D D D D
V(BR)DSS RDS(ON) ID
30V 2.4mΩ 95A

G. GATE
#1 S S S G D. DRAIN
S. SOURCE

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 95
Continuous Drain Current3 ID
TC = 100 °C 40
Pulsed Drain Current1 IDM 150
A
TA = 25 °C 26
Continuous Drain Current ID
TA = 70 °C 21
Avalanche Current IAS 51
Avalanche Energy L = 0.1mH EAS 129 mJ
TC = 25 °C 39
Power Dissipation PD W
TC = 100 °C 15.6
TA = 25 °C 3
Power Dissipation PD W
TA = 70 °C 2
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
2
Junction-to-Ambient RJA 40
°C / W
Junction-to-Case RJC 3.2
1
Pulse width limited by maximum junction temperature.
2
The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3
Package limitation current is 51A.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 1.7 2.3

REV1.0 E-16-2
1
NIKO-SEM N-Channel Enhancement Mode
PK698SA
PDFN 5x6P
Field Effect Transistor
Halogen-Free & Lead-Free

Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA

VDS = 24V, VGS = 0V 0.3
Zero Gate Voltage Drain Current IDSS mA
VDS = 20V, VGS = 0V, TJ = 55 °C 30

Drain-Source On-State VGS = 4.5V, ID = 16A 2.3 3

RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 20A 1.9 2.4
Forward Transconductance1 gfs VDS = 5V, ID = 20A 80 S
DYNAMIC
Input Capacitance Ciss 3200
Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 596 pF
Reverse Transfer Capacitance Crss 350
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω
VGS = 10V 63.7
Total Gate Charge2 Qg
VGS = 4.5V 33.2
2
VDS = 15V ,ID = 20A nC
Gate-Source Charge Qgs 8
Gate-Drain Charge2 Qgd 16
2
Turn-On Delay Time td(on) 30
Rise Time2 tr VDS = 15V , 16
2
Turn-Off Delay Time td(off) ID  20A, VGS = 10V, RGEN =6Ω 60
nS
2
Fall Time tf 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3 IS 65 A
1
Forward Voltage VSD IF = 1A, VGS = 0V 0.6 V
Reverse Recovery Time trr 29 nS
IF = 20A, dlF/dt = 100A / S
Reverse Recovery Charge Qrr 13 nC
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.
3
Package limitation current is 51A.

REV1.0 E-16-2
2
 NIKO-SEM N-Channel Enhancement Mode
PK698SA
PDFN 5x6P
Field Effect Transistor
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

40 40
VGS=10V
VGS=9V
VGS=8V
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

32 VGS=7V 32
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
24 24
VGS=3V

16 16
25℃
VGS=2.5V

8 8
125℃
‐20℃

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature Capacitance Characteristic

1.8 4000

3500
Normalized Drain to Source

1.6
C , Capacitance(pF)

3000 CISS

1.4
ON-Resistance

2500

1.2 2000

1500
1.0

1000

0.8
VGS=10V COSS
500
ID=20A CRSS

0.6 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30

TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics Source-Drain Diode Forward Voltage

10 100
VGS , Gate-To-Source Voltage(V)

VDS=15V
ID=20A
8
IS , Source Current(A)

10
6

4 150℃ 25℃
1

0 0.1
0 10 20 30 40 50 60 0.0 0.2 0.4 0.6 0.8 1.0

Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V)

REV1.0 E-16-2
3
NIKO-SEM N-Channel Enhancement Mode
PK698SA
PDFN 5x6P
Field Effect Transistor
Halogen-Free & Lead-Free

Safe Operating Area Single Pulse Maximum Power Dissipation

1000 160

Single Pulse
140
RθJA = 40˚C/W
100 TA=25˚C
120
ID , Drain Current(A)

10 100

Power(W)
1ms
80
Operation in This 10ms
1 Area is Limited by
RDS(ON) 100ms 60

NOTE : 40
0.1 1.VGS= 10V
DC
2.TA=25˚C
3.RθJA = 50˚C/W 20
4.Single Pulse

0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100

VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10
Transient Thermal Resistance
r(t) , Normalized Effective

Duty cycle=0.5

0.2 Notes

0.1
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJA = 40 ℃/W
0.02
3.TJ-TA = P*RthJA(t)

0.01
single pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100
T1 , Square Wave Pulse Duration[sec]

REV1.0 E-16-2
4
NIKO-SEM N-Channel Enhancement Mode
PK698SA
PDFN 5x6P
Field Effect Transistor
Halogen-Free & Lead-Free

REV1.0 E-16-2
5