8.

2 Structures and Defects in Epitaxial Layers 153

Lattie matched
Strained
Unstrained

Epitaxial laver Epitaxial layer

Epitaxial layer

Substrate crystal Substrate crystal Substrate crystal

al
(b)
Figure 8.6 Schematic illustration of (a) (c)
taial stractures. lattice-matched,
Homoepitaxy is structuraly (b) strained, and-(c)
identical the
to relaxed heteroepi
lattice-matched heteroepitaxy.
The critical layer
upper curve is for the thicknesses for two material systems are shown in
the lower
curve is for astrained-layer epitaxy of aGe,Si,_ layer on a Figure 8.7. The
Ga,_In As layer on aGaAs silicon substrate, and
on silicon, the
maximum substrate. For
locations will occur. epitaxial thickness is about 70 nm. For example, for Ge, Sig
Arelated thicker films, edge dis
heteroepitaxial
lattice is an artificial structure is the
strained-layer
nals with aperiod of
with different
one-dimensional
about 10 nm. Figure 8.8 shows an SLS
superlatticeby (SLS). Asuper
periodic structure constituted
different mate
inplane latice equilibrium lattice constants a, > a,, having two
semiconductors
match is constant byb, where a, >b>a, For grown in a structure with a common
lit
disloacCOmmodated
catio ns are uniform strains sufficiently
in the layers. thin layers, the lattice
beobtained.
These generated at the interfaces, so Under these conditions, no mismis
rials provide a new artificially structured high-quality
can be growncrystalline
especial y for area inand photonie Inaterials
high-speed semiconductappl or by MBE.materials
research and permit new These mate
can

8.22 Defects in ications. solid-state devices,

Defects
Epitaxial
in epitaial Layers
in reduced
rnobilitylayers
or
will degrade device
properties.
increased leakage current. For
categori1. zed into five groups: The defectsexample,
in defects can result
Defects epitaxial layers can be
into the from the
substr ates. These
epitaxial laver. To avoid defects mav
substrates are required. these propagate from the