Section 6: Ion Implantation

Jaeger Chapter 5

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 Ion Implantation - Overview
• Wafer is Target in High Energy Accelerator
• Impurities “Shot” into Wafer
• Preferred Method of Adding Impurities to Wafers
– Wide Range of Impurity Species (Almost Anything)
– Tight Dose Control (A few % vs. 20-30% for high
temperature pre-deposition processes)
– Low Temperature Process
• Expensive Systems
• Vacuum System

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 Force on charged particle (
F=q vxB )
Equipment 2mV
Magnetic Field B=
qr 2
T
I (t )dt
1
Implanted Dose Q= ∫
nqA 0

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 Ion Implantation
C(x) as-implant
+
depth profile

y
Blocking mask
Si

Equal-Concentration Depth x
x contours

Reminder:
Reminder:During
Duringimplantation,
implantation,temperature
temperatureisisambient.
ambient.However,
However,
post-implant o
post-implantannealing
annealingstep
step(>900
(>900oC)
C)isisrequired
requiredto
toanneal
annealout
outdefects.
defects.

EE143 – Ali Javey

 Advantages of Ion Implantation
• Precise control of dose and depth profile
• Low-temp. process (can use photoresist as mask)
• Wide selection of masking materials
e.g. photoresist, oxide, poly-Si, metal
• Less sensitive to surface cleaning procedures
• Excellent lateral uniformity (< 1% variation across 12” wafer)
Application example: self-aligned MOSFET source/drain regions
As+ As+ As+

Poly Si Gate

n+ n+ SiO2
p-Si
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 Ion Implantation Energy Loss Mechanisms
Nuclear Si
stopping + Si
+
Crystalline Si substrate damaged by collision

e
e
+ +
Electronic Si
stopping

Electronic excitation creates heat

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 Ion Energy Loss Characteristics
Light ions/at higher energy more electronic stopping

Heavier ions/at lower energy more nuclear stopping

EXAMPLES
Implanting into Si:
Electronic stopping
H+ dominates
Electronic stopping
B+ dominates

As+ Nuclear stopping

dominates
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Stopping Mechanisms

E1(keV) E2(keV)
B into Si 3 17
P into Si 17 140
As into Si 73 800

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Simulation of 50keV Boron implanted into Si

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Model for blanket implantation
Gaussian Profile
⎡ (x − R p )2 ⎤
N ( x ) = N p exp ⎢− 2 ⎥
⎢⎣ 2ΔR p ⎥⎦
R p = Projected Range
ΔR p = Straggle
∞
Dose Q = ∫ N ( x )dx = 2π N p ΔR p
0

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 Projected Range and Straggle
Rp and ΔRp values are given in tables or charts
e.g. see pp. 113 of Jaeger

Note: this means 0.02 μm.

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Selective Implantation

N ( x, y ) = N ( x )F ( y )
1⎡ ⎛ y−a ⎞ ⎛ y + a ⎞⎤
F ( y ) = ⎢erfc⎜⎜ ⎟ − erfc⎜
⎟ ⎜
⎟⎥
⎟
2 ⎢⎣ ⎝ 2 ΔR⊥ ⎠ ⎝ 2 ΔR ⊥ ⎠⎥⎦
ΔR⊥ = transverse straggle
N(x ) is one - dimensional solution

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 Transverse (or Lateral) Straggle (ΔRt or Δ R⊥)

ΔRt
ΔRp >1
ΔRt

ΔRp

ΔRt

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 Feature Enlargement due to lateral straggle
y

Mask
x

x = Rp

Lower
concentration Higher concentration Implanted
Implantedspecies
species
has
haslateral
lateraldistribution,
distribution,
larger
largerthan
thanmask
maskopening
opening
C(y) at x=Rp

y
EE143 – Ali Javey
 Definitions of Profile Parameters
∞
(1) Dose φ = ∫0 C( x )dx
∞
x ⋅ C ( x )dx
1
(2) Projected Range: R p ≡
φ ∫ 0

(3) Longitudinal Straggle: (ΔR ) ≡ ∫ (x − R )

∞
⋅ C ( x )dx
1 2 2

φ
p p
0
1 ∞
∫
3
(4) Skewness: M 3 ≡ (x - Rp ) C(x )dx, M 3 > 0 or < 0
φ 0

-describes asymmetry between left side and right side

∫ (x − R ) C (x )dx
∞
(5) Kurtosis: ∝ p
4
C(x)
0

Kurtosis characterizes the

contributions of the “tail” regions

Rp x
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Selective Implantation – Mask thickness

• Desire Implanted Impurity

Level to be Much Less
Than Wafer Doping
N(X0) << NB
or
N(X0) < NB/10

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 Transmission Factor of Implantation Mask
Mask material (e.g. photoresist)
C(x)

What fraction of
Si substrate
dose gets into
Si substrate?

x=0 x=d

C(x) Mask material with

d=∞
-
x=0 x=d
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 Transmitted Fraction
∞
T = ∫0 C(x )dx − ∫ (x )dx
d
0
C
Rp , ΔRp
1 ⎧ d − Rp ⎫
= erfc ⎨ ⎬ are values of
2 ⎩ 2ΔRp ⎭ for ions into
the masking material
2
erfc(x ) = 1 −
x −y2
π
∫ 0
e dy
Rule of thumb : Good masking thickness
C(x = d ) −4
d = Rp + 4.3ΔRp
C(x = Rp )
~ 10

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Junction Depth
The junction depth is
calculated from the point at
which the implant profile
concentration = bulk
concentration:
N (x j ) = N B
⎡ (x j − R p )2 ⎤
N p exp ⎢− ⎥ = NB
⎢⎣ 2ΔR p ⎥⎦
2

⎛ Np ⎞
x j = R p ± ΔR p 2 ln⎜⎜ ⎟⎟
⎝ NB ⎠

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 Sheet Resistance RS of Implanted Layers
Example: x =0
n
n-type dopants
x =xj
implanted
into p-type substrate p-sub (CB)

x
1
RS =
q ⋅ μ (x ) [C(x ) − C B ] dx
xj
∫ 0
C(x) log scale

μ
μn
CB
μp
Total x
1017 1019 xj
doping conc

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 Approximate Value for RS
If C(x) >>CB for most depth x of interest
and use approximation: μ(x) ~ constant

1 1
⇒ Rs → ≅ This expression assumes ALL

qμ ∫ C( x ) dx
xj
qμφ implanted dopants are 100%
electrically activated
0
1
Rs ≅
qμφ
use the μ for the highest
[ R ] = ohm
s
doping region which carries
most of the current
or ohm/square
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 Example Calculations
200 keV Phosphorus is implanted into a p-Si ( CB= 1016/cm3) with a
dose of 1013/cm2 .
From graphs or tables , Rp =0.254 μm , ΔRp=0.0775μm
(a) Find peak concentration
Cp = (0.4 x 1013)/(0.0775 x10-4) = 5.2 x1017/cm3
(b) Find junction depths
(b) Cp exp[ -( xj-0.254)2/ 2 ΔRp2]= NCBB with xj in μm x
j1
∴ ( xj - 0.254)2 = 2 ×(0.0775)2 ln [ 5.2 ×1017/1016]
Phosphorus
Rp
Implant
x
j2
or xj = 0.254 ± 0.22 μm ; xj1 = 0.032 μm and xj2 = 0.474 μm
p-substrate (1E16 /cm3)

(c) Find sheet resistance

From the mobility curve for electrons (using peak conc as impurity conc), μn= 350 cm2 /V-sec
1 1
Rs = = ≈ 1780 Ω/square.
qμnφ 1.6×10-19 ×350 ×1013

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Channeling

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 Use of tilt to reduce channeling
C(x) Random component Lucky ions fall into
channel despite tilt
channeled
component

x
Random Planar Channeling Axial Channeling

To o
Tominimize
minimizechanneling, we
wetilt
channeling,EE143 wafer
– Ali
tilt Javeyby
wafer by77owith
withrespect
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beam.
 Prevention of Channeling by Pre-amorphization
Step 1 + Si crystal
High dose Si+
Si
implantation to covert
surface layer into 2
amorphous Si
1 E15/cm

Amorphous Si
Step 2 Si crystal
Implantation of B+
desired dopant
into amorphous
surface layer

Disadvantage
Disadvantage::Needs
Needsan
anadditional
additionalhigh-dose
high-doseimplantation
implantationstep
step

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 Kinetic Energy of Multiply Charged Ions
With Accelerating Voltage = x kV

B+
Singly Kinetic Energy = x · keV
charged P+
As+
Doubly
charged B++ Kinetic Energy = 2x · keV

Triply
charged
B+++ Kinetic Energy = 3x · keV

Note: Kinetic energy is expressed in eV . An electronic charge q experiencing a

voltage drop of 1 Volt will gain a kinetic energy of 1 eV

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 Molecular Ion Implantation
Kinetic Energy = x keV Molecular ion will
dissociate immediately
into atomic components
B after entering a solid.
BF2+ F All atomic components
F will have same velocity
after dissociation.
accelerating voltage
+ = x kV - Velocity vB = vF = vF
1
K .E. of B = m B ⋅ v B
2
Solid 2
Surface 1
K .E. of F = m F ⋅ v B
2
B has 11 amu 2
F has 19 amu K .E. of B 11
+
≈ = 20%
K .E. of BF2 11 + 19 + 19

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Implantation Damage

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Amount and type of Crystalline Damage

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 Post-Implantation Annealing Summary

After implantation, we need an annealing step.

A typical anneal will:

(1) Restore Si crystallinity.

(2) Place dopants into Si substitutional sites

for electrical activation

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 Deviation from Gaussian Theory

• Curves deviate from Gaussian for deeper implants (> 200 keV)

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Shallow Implantation

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Rapid Thermal Annealing

•Rapid Heating
•950-1050o C
•>50o C/sec
•Very low dopant
diffusion

(b)

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Dose-Energy Application Space

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