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Creep of Materials-Latest
Creep of Materials-Latest
of engineering materials
(Creep of materials)
Email: nvrk@iitm.ac.in
URL: https://mme.iitm.ac.in/nvrk
IIT Madras
1
High temperature deformation behavior of engineering
materials (Creep of materials)
Learning objectives
Plastic deformation of a material (time dependent) that is subjected to a stress lower than its
yield stress when that material is at a high homologous temperature.
High
temperature
Ice creeps at -50°C (223K), melting point of ice (Tm) = 0°C (273K), the
homologous temperature is 0.82,
Lead-tin solders creep at 20°C (293K), melting point of the solder (Tm) ~
200°C (473K), the homologous temperature is 0.62,
High Constant
temperature load
Room
temperature
At t = 0
Driving force
Turbine blades
&
Test
specimen
SiC Pin SiC Pin
SiC Pin
I II III
Instantaneous
elastic strain = /E
Role of dislocation ?
Role of diffusion ?
Slip planes
Diffusion of vacancies
into the dislocation core
Dislocation climb requires a short range diffusion process, which allows the
dislocation to move to an adjacent slip plane.
This means, the dislocation creep (creep strain rate) is controlled by the
climb or glide process of the dislocations.
The climb-controlled process has been analyzed and leads to the strain-rate
equation of the form:
In Coble creep, strain rate depends on d-3, this means higher sensitivity to
grain size.
Slope = n
High T High 𝝈
ln (strain rate)
ln (strain rate)
Low T
Low 𝝈
Slope = -Q/R
ln (stress) 1/T
For pure metals, a logarithmic plot of strain rate vs. stress, reveals 3 distinct
regions of flow.
Region - B
Recapitulation
The overall concept of the generalized plot (for solid solutions), is that the
dislocations move by climb and glide in the alloys and the slowest of these two
processes is the rate-controlling mechanism.
In pure metals, glide is always faster than climb so that n ~ 5, where as in solid
solution alloys, glide becomes slower than climb at the transition from n ~ 5 to n = 3.
At higher stresses, dislocations are able to break away from the solute
atmospheres, so that n > 3, and then again a transition to climb.
Potential
of
MMCs
Specimen geometry
= /L
1
2. Plot n
vs.
3. Choose that plot which
gives you the linear fit for the
data.
4. Extrapolate to zero creep
rates to obtain threshold
stresses.
5. n ~ 4, indicates dislocation
climb.
Effective stress = - o
Load transfer refers to the situation in which a part of the external load is transferred
to the reinforcement, thereby reducing the level of the effective stress (e) that acts on the
matrix alloy
Load transfer is generally incorporated into the analysis by the use of a load transfer
coefficient () = [0, 1].
For simplicity, one can use a coefficient () which incorporates both load
transfer and substructural strengthening.
Why does the incandescent tungsten filament not fail quite frequently in
modern times which used to be the case before….?
• Influence of processing
SS- SiC, Hexoloy, Carborundum LPS- Si3N4, SN88 NGK Insulator Inc.,
SiC grain and dry grain boundaries, with residual Darker phase is the silicon nitride grain and the
graphite at multi-grain junctions lighter phase is the residual sintering aid/liquid
phase
MME, IITM Dr. rer. nat. Ravi Kumar, N. V
Influence of microstructure
KX01-RB-SiC
SS -SiC LPS-Si3N4 (33 vol% Si)
RB-SiC
SCRB210-RB-SiC
(18 vol % Si)
Reaction bonded
(RB) SiC
NT230-RB-SiC
(8 vol% Si)
Index of long
term life time
Microstructure showing
Si3N4 grains (dark phase)
High performance Microstructure- SEM Microstructure-HREM coated with a glassy
Si3N4 ceramic secondary phase (brighter
phase)
Softening of this
secondary glassy phase
at higher temperatures
allows creep to occur by
grain boundary sliding.
Note – 1: It is not the sliding process which controls the creep behavior here, but the viscosity of the
glassy phase which controls the creep rates.
Note – 2: Higher the refractoriness of this glassy phase, better the creep resistance of the material.
Dissolution-precipitation Liquid redistribution
mechanism mechanisms containing a
glassy grain boundary phase
w 2 / 3 w 3
o d 3 o d 3
w = thickness of the glassy layer, = atomic volume of the diffusing species
After tensile
creep
From the analysis of creep data the values of m and n can be obtained and in principle
one can identify the predominant creep mechanism
Creep mechanism m n Diffusion path
Dislocation creep
Climb controlled 0 4-5 Lattice
Glide controlled 0 3 Lattice
Diffusional creep
Vacancy flow thro’ grains 2 1 Lattice
Vacancy flow along gbs 3 1 grain boundary
p
tf C
s
Where, tf = failure time (h),
p (~ 0.8 -0.95) and C (~ 3 - 20) are
constant for a given material.
p
tf C
s
f
Another correlation exists between the applied stress () and the Larson-
Miller parameter (P):
σ tf (h) ɛf (pct)
T (K) LMP (CLM = 15) LMP (CLM = 20)
(MPa)
498 70 0.099 15.9 6970 9460
60 0.28 15.6 7195 9685
50 0.99 16.9 7468 9958
40 2.6 12.8 7677 10167
30 9.8 18.6 7964 10454
473 90 0.12 24.2 6659 9024
80 0.35 17.5 6879 9244
70 0.78 16.9 7044 9409
60 2.1 20.3 7247 9612
50 4.6 23.4 7408 9773
40 13.5 20.7 7630 9995
30 46.1 17.6 7882 10247
Arriving at the
correct Larson-
Miller constant
(CLM)…independent
of the creep temp!
1095 10 155
MME, IITM Dr. rer. nat. Ravi Kumar, N. V
Solution
LMP = T. (CLM + log tf)
Ashby et al
KEY: Fine grained structure (<10µm), low strain rates, resistance to grain growth,
high strain rate sensitivity
60
1850ºC
1750ºC 1800ºC
40
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
True strain