PD - 97119

IRF8721PbF
HEXFET® Power MOSFET
Applications
l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg
Converters used for Notebook Processor
Power 30V 8.5m:@VGS = 10V 8.3nC
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
A
Benefits S
1 8
A
D
l Very Low Gate Charge 2 7
S D
l Low RDS(on) at 4.5V VGS
3 6
S D
l Low Gate Impedance
4 5
l Fully Characterized Avalanche Voltage G D

and Current SO-8

Top View
l 20V VGS Max. Gate Rating
l Lead-Free
Description
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Currentc 110
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJL g
Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient fg ––– 50
Notes  through are on page 9
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IRF8721PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 6.9 8.5 mΩ VGS = 10V, ID = 14A e
––– 10.6 12.5 VGS = 4.5V, ID = 11A e
VGS(th) Gate Threshold Voltage 1.35 ––– 2.35 V VDS = VGS, ID = 25μA
ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 24V, VGS = 0V
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 27 ––– ––– S VDS = 15V, ID = 11A
Qg Total Gate Charge ––– 8.3 12
Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.0 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 3.2 ––– ID = 11A
Qgodr Gate Charge Overdrive ––– 2.0 ––– See Fig. 16a and 16b
Qsw Switch Charge (Qgs2 + Qgd) ––– 4.2 –––
Qoss Output Charge ––– 5.0 ––– nC VDS = 16V, VGS = 0V
RG Gate Resistance ––– 1.8 3.0 Ω
td(on) Turn-On Delay Time ––– 8.2 ––– VDD = 15V, VGS = 4.5V
tr Rise Time ––– 11 ––– ID = 11A
td(off) Turn-Off Delay Time ––– 8.1 ––– ns RG = 1.8Ω
tf Fall Time ––– 7.0 ––– See Fig. 15a
Ciss Input Capacitance ––– 1040 ––– VGS = 0V
Coss Output Capacitance ––– 229 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 114 ––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 68 mJ
IAR Avalanche Current c ––– 11 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current ––– ––– 3.1 MOSFET symbol
(Body Diode) A showing the
G
ISM Pulsed Source Current ––– ––– 112 integral reverse
(Body Diode)c p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 11A, VGS = 0V e
trr Reverse Recovery Time ––– 14 21 ns TJ = 25°C, IF = 11A, VDD = 15V
Qrr Reverse Recovery Charge ––– 15 23 nC di/dt = 300A/μs e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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 IRF8721PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

4.5V 4.5V
100 3.5V 3.5V
3.0V 3.0V
2.7V 2.7V
2.5V 100 2.5V
10 BOTTOM 2.3V BOTTOM 2.3V

1
10

0.1 2.3V
≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH
2.3V
Tj = 25°C Tj = 150°C
0.01 1
0.1 1 10 100 0.1 1 10 100

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
VDS = 15V ID = 14A
RDS(on) , Drain-to-Source On Resistance

≤ 60μs PULSE WIDTH VGS = 10V

ID, Drain-to-Source Current (A)

100

1.5
10
(Normalized)

TJ = 25°C
TJ = 150°C
1

1.0

0.1

0.01
0.5
1.0 2.0 3.0 4.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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 IRF8721PbF
10000 16
VGS = 0V, f = 1 MHZ ID= 11A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 24V

VGS, Gate-to-Source Voltage (V)

Crss = Cgd
VDS= 15V
Coss = Cds + Cgd 12
C, Capacitance (pF)

1000 8
Ciss

Coss 4

Crss

0
100
0 5 10 15 20 25
1 10 100
Qg, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)

100 100
100μsec
TJ = 150°C
1msec
10 10

10msec

1 TJ = 25°C 1
TA = 25°C
Tj = 150°C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF8721PbF
16 2.4

2.2

VGS(th) Gate threshold Voltage (V)

12 2.0
ID , Drain Current (A)

1.8
ID = 25μA
8 1.6

1.4

4 1.2

1.0

0 0.8
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150

TA, Ambient Temperature (°C) TJ, Temperature ( °C )

Fig 9. Maximum Drain Current Vs. Fig 10. Threshold Voltage Vs. Temperature
Case Temperature

100

D = 0.50
Thermal Response ( Z thJA )

10 0.20
0.10
0.05
0.02 R1 R2 R3 R4 Ri (°C/W) τι (sec)
1 R1 R2 R3 R4
0.01 τJ τa 1.935595 0.000148
τJ
τ1 τ2 τ3 τ4 7.021545 0.019345
τ1 τ2 τ3 τ4
26.61013 0.81305
Ci= τi/Ri 14.43961 26.2
0.1 Ci i/Ri
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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 IRF8721PbF
RDS (on), Drain-to -Source On Resistance (mΩ)

16 300
ID = 14A

EAS, Single Pulse Avalanche Energy (mJ)

ID
14 250 TOP 0.83A
1.05A
BOTTOM 11A
200
12
TJ = 125°C
150
10

100

8
TJ = 25°C
50

6
2.0 4.0 6.0 8.0 10.0 0
25 50 75 100 125 150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy
vs. Drain Current

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01Ω
I AS

Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms

RD
VDS VDS

VGS 90%
D.U.T.
RG
+
-VDD

V10V
GS 10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 VGS
td(on) tr t d(off) tf

Fig 15a. Switching Time Test Circuit Fig 15b. Switching Time Waveforms
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 IRF8721PbF

Current Regulator Id
Same Type as D.U.T. Vds

50KΩ
Vgs
12V .2μF
.3μF

+
V
D.U.T. - DS

VGS Vgs(th)

3mA

IG ID
Current Sampling Resistors

Qgodr Qgd Qgs2 Qgs1

Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

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IRF8721PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)

INCH E S MIL L IME T E R S

DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 B AS IC 1.27 B AS IC
e1 .025 B AS IC 0.635 B AS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

FOOT PRINT

8X 0.72 [.028]
NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
6.46 [.255]
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOS FET )
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
XXXX WW = WEEK
INT ERNAT IONAL F7101
A = AS S EMBLY S IT E CODE
RECTIFIER LOT CODE
LOGO
PART NUMBER

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRF8721PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.09mH, RG = 25Ω, IAS = 11A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at T J of approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
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