EED102: Semiconductor

Devices
Dr. Venkatnarayan Hariharan
Dept of Electrical Engg., Shiv Nadar Univ., Delhi NCR

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 Agenda
• Bipolar Junction Transistor (BJT)
• DC Current modeling
• DC Model for generalized biasing: Ebers-Moll Model
• DC I-V Characteristics
• AC small-signal model: Hybrid-𝜋 model

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 DC Current Modeling
• Approach:
• Calculate spatial distribution of injected carriers within the base
region, using some simplifying assumptions, viz.:
• Uniform cross-sectional area A and 1-D current flow
• 𝐽𝑑𝑖𝑓𝑓 dominates 𝐽𝑑𝑟𝑖𝑓𝑡 in the base region
• Emitter injection efficiency 𝛾 = 1, ie. 𝐼𝐸 is made up entirely of holes
(continuing our P+NP transistor discussion)
• The collector junction’s reverse saturation current is negligible
• Evaluate 𝐼𝐸 & 𝐼𝐶 from the slope (𝐽𝑑𝑖𝑓𝑓 ) of the hole distribution on
each side of the base
• Find 𝐼𝐵 using KCL
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 DC Current Modeling
• In L12, we developed the bias-dependent model for excess
minority carrier injection at the edges of the DR (depletion
region) of a single PN junction. We now apply this to both
junctions of the BJT independently, ie. 𝑥 = 0 and 𝑥 = 𝑊𝑏
• Using the above as boundary conditions, we will solve the
diffusion equation (developed in L10 by combining the
continuity equation & 𝐽𝑑𝑖𝑓𝑓 equation) in the base region

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 DC Current Modeling
1. Excess hole concentration at the DR-edge of the
emitter junction (ie. at 𝑥 = 0) due to BE bias is:
Δ𝑝𝐸 = 𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵 /𝑘𝑇 − 1
2. Excess hole concentration at the DR-edge of the
collector junction (ie. at 𝑥 = 𝑊𝑏 ) due to BC bias is:
Δ𝑝𝐶 = 𝑝𝑛 𝑒 𝑞𝑉𝐶𝐵 /𝑘𝑇 − 1
where 𝑝𝑛 is the hole concentration in the base in the absence of
any bias
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 DC Current Modeling
3. In forward active mode (𝑉𝐸𝐵 ≫ 𝑘𝑇/𝑞 and 𝑉𝐶𝐵 ≪ 0), these
simplify to:
𝚫𝒑𝑬 ≈ 𝒑𝒏 𝒆𝒒𝑽𝑬𝑩 /𝒌𝑻
𝚫𝒑𝑪 ≈ −𝒑𝒏
4. The diffusion equation for holes in the base region is:
𝜕 𝛿𝑝 𝑥, 𝑡 𝜕 2 𝛿𝑝 𝑥, 𝑡 𝛿𝑝 𝑥, 𝑡
= 𝐷𝑝 2
−
𝜕𝑡 𝜕𝑥 𝜏𝑝
5. In the steady state (ie. no time variation), this simplifies to:
𝜕 2 𝛿𝑝 𝑥 𝛿𝑝 𝑥 𝜕 2 𝛿𝑝 𝑥
0 = 𝐷𝑝 2
− ⇒ 𝐷𝑝 𝜏𝑝 2
= 𝛿𝑝 𝑥
𝜕𝑥 𝜏𝑝 𝜕𝑥
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 DC Current Modeling
6. Reiterating that for the present coordinate system, we
𝜕2 𝛿𝑝 𝑥𝑛
have: 𝐷𝑝 𝜏𝑝 2 = 𝛿𝑝 𝑥𝑛
𝜕𝑥𝑛
7. Noting that 𝐿𝑝 = 𝐷𝑝 𝜏𝑝 , that becomes:
𝝏𝟐 𝜹𝒑 𝒙𝒏 𝜹𝒑 𝒙𝒏
= (where 𝐿𝑝 is the hole diffusion length in the base region)
𝝏𝒙𝟐 𝑳𝟐𝒑
8. We need to solve this using #3, by applying them as
boundary conditions for #7 at 𝑥𝑛 = 0 and 𝑥𝑛 = 𝑊𝑏
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 DC Current Modeling
9. It is easily seen that the general solution for #7 is:
𝛿𝑝 𝑥𝑛 = 𝐶1 𝑒 𝑥𝑛 /𝐿𝑝 + 𝐶2 𝑒 −𝑥𝑛 /𝐿𝑝
10. We can find 𝐶1 and 𝐶2 by using #3, by noting that:
𝛿𝑝 0 = Δ𝑝𝐸 = 𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵 /𝑘𝑇 and
𝛿𝑝 𝑊𝑏 = Δ𝑝𝐶 = −𝑝𝑛
11. From #9 and #10, we have:
𝛿𝑝 0 = 𝐶1 + 𝐶2 = 𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵 /𝑘𝑇 and
𝛿𝑝 𝑊𝑏 = 𝐶1 𝑒 𝑊𝑏/𝐿𝑝 + 𝐶2 𝑒 −𝑊𝑏/𝐿𝑝 = −𝑝𝑛
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 DC Current Modeling

Minority carrier
distributions in the
emitter, base and collector
regions (assuming the
more realistic 𝛾 < 1)

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 DC Current Modeling
12. Assuming that 𝑊𝑏 ≪ 𝐿𝑝 (narrow base, as needed for a good
𝑥 2 𝑥 3
transistor) and noting that 𝑒 𝑥 ≈ 1 + 𝑥 + + when 𝑥 ≪
2 6
1, these can be approximated as:
𝐶1 + 𝐶2 = 𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵 /𝑘𝑇 and
𝑊𝑏 𝑊𝑏2 𝑊𝑏3 𝑊𝑏 𝑊𝑏2 𝑊𝑏3
𝐶1 1 + + 2 + 3 + 𝐶2 1 − + 2 − 3 ≈ −𝑝𝑛
𝐿𝑝 2𝐿𝑝 6𝐿𝑝 𝐿𝑝 2𝐿𝑝 6𝐿𝑝
𝑞𝑉 /𝑘𝑇
13. That is: 𝐶1 + 𝐶2 = 𝑝𝑛 𝑒 𝐸𝐵
𝑊𝑏2 𝑊𝑏 𝑊𝑏3
14. And: 𝐶1 + 𝐶2 1+ + 𝐶1 − 𝐶2 + = −𝑝𝑛
2𝐿2𝑝 𝐿𝑝 6𝐿3𝑝
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 DC Current Modeling
15. Substituting #13 in #14, we get:
𝑊𝑏2 𝑊𝑏 𝑊𝑏3
𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵/𝑘𝑇 1 + 2 + 𝐶1 − 𝐶2 + = −𝑝𝑛
2𝐿𝑝 𝐿𝑝 6𝐿3𝑝
16. From #15 we get:
𝑞𝑉𝐸𝐵 𝑊𝑏2 𝑞𝑉𝐸𝐵 𝑊𝑏2
𝑝𝑛 𝑒 𝑘𝑇 1 + 2 + 𝑝𝑛 𝑝𝑛 𝑒 𝑘𝑇 1 + 2
2𝐿𝑝 2𝐿𝑝
𝐶2 − 𝐶1 = 3 ≈
𝑊𝑏 𝑊𝑏 𝑊𝑏 𝑊𝑏2
+ 1+ 2
𝐿𝑝 6𝐿3𝑝 𝐿𝑝 6𝐿𝑝
1
17. Noting that ≈ 1 − 𝑥 when 𝑥 < 1, #16 implies:
1+𝑥
𝑞𝑉𝐸𝐵 𝐿 𝑞𝑉𝐸𝐵
𝑝 𝑊𝑏2 𝑊𝑏2 𝐿𝑝 𝑊𝑏2 𝑊𝑏2 𝑊𝑏4
𝐶2 − 𝐶1 ≈ 𝑝𝑛 𝑒 𝑘𝑇 1+ 1− ≈ 𝑝𝑛 𝑒 𝑘𝑇 1+ − −
𝑊𝑏 2𝐿2𝑝 6𝐿2𝑝 𝑊𝑏 2𝐿2𝑝 6𝐿2𝑝 12𝐿4𝑝

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 DC Current Modeling
18. Neglecting the red term since 𝑊𝑏 ≪ 𝐿𝑝 , we have:
𝑞𝑉𝐸𝐵 𝐿𝑝 𝑊𝑏2
𝐶2 − 𝐶1 ≈ 𝑝𝑛 𝑒 𝑘𝑇 1+ 2
𝑊𝑏 3𝐿𝑝
19. Reiterating: 𝛿𝑝 𝑥𝑛 = 𝐶1 𝑒 𝑥𝑛/𝐿𝑝 + 𝐶2 𝑒 −𝑥𝑛/𝐿𝑝 where
𝑞𝑉𝐸𝐵 𝐿𝑝 𝑊𝑏2
𝐶1 + 𝐶2 = 𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵 /𝑘𝑇 and 𝐶2 − 𝐶1 = 𝑝𝑛 𝑒 𝑘𝑇 1 + 3𝐿2
𝑊𝑏 𝑝
20. Now, the hole current in the base is:
𝑑 𝛿𝑝𝑛 (𝑥𝑛 ) −𝑞𝐴𝐷𝑝
𝐼𝑝 𝑥𝑛 = −𝑞𝐴𝐷𝑝 = 𝐶1 𝑒 𝑥𝑛 /𝐿𝑝 − 𝐶2 𝑒 −𝑥𝑛 /𝐿𝑝
𝑑𝑥𝑛 𝐿𝑝
−𝑞𝐴𝐷𝑝
21. Hence, 𝐼𝐶 = 𝐼𝑝 𝑥𝑛 = 𝑊𝑏 = 𝐿 𝐶1 𝑒 𝑊𝑏 /𝐿𝑝 − 𝐶2 𝑒 −𝑊𝑏 /𝐿𝑝 . Using the 𝑒 𝑥 expansion
𝑝
stated in #12 up to 2nd order terms, this becomes:
−𝑞𝐴𝐷𝑝 𝑊𝑏 𝑊𝑏2 𝑊𝑏 𝑊𝑏2
𝐼𝐶 ≈ 𝐶1 1 + + − 𝐶2 1 − +
𝐿𝑝 𝐿𝑝 2𝐿2𝑝 𝐿𝑝 2𝐿2𝑝
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 DC Current Modeling
𝑞𝐴𝐷𝑝 𝑊 𝑊𝑏2 𝑊𝑏 𝑊𝑏2
22. That is: 𝐼𝐶 = 𝐶2 1 − 𝐿𝑏 + 2𝐿2 − 𝐶1 1 + + 2𝐿2
𝐿𝑝 𝑝 𝑝 𝐿𝑝 𝑝
𝑞𝐴𝐷𝑝 𝑊𝑏2 𝑊𝑏
23. That is: 𝐼𝐶 = 𝐿𝑝
𝐶2 − 𝐶1 1+ 2𝐿2𝑝
− 𝐿𝑝
𝐶1 + 𝐶2
24. Using #19’s expression for 𝐶2 ± 𝐶1 in #23, we get:
𝑞𝐴𝐷𝑝 𝑞𝑉𝐸𝐵 𝐿𝑝 𝑊𝑏2 𝑊𝑏2 𝑊𝑏
𝐼𝐶 = 𝑝𝑛 𝑒 𝑘𝑇 1+ 2 1+ 2 − 𝑝𝑛 𝑒 𝑞𝑉𝐸𝐵 /𝑘𝑇
𝐿𝑝 𝑊𝑏 3𝐿𝑝 2𝐿𝑝 𝐿𝑝
𝑞𝑉𝐸𝐵
𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝐿𝑝 5𝑊𝑏2 𝑊𝑏4 𝑊𝑏
∴ 𝐼𝐶 = 1+ 2 + 4 −
𝐿𝑝 𝑊𝑏 6𝐿𝑝 6𝐿𝑝 𝐿𝑝
𝑞𝑉𝐸𝐵
𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝐿𝑝 5𝑊𝑏 𝑊𝑏
25. Neglecting the red term, this becomes: 𝐼𝐶 ≈ + −
𝐿𝑝 𝑊𝑏 6𝐿𝑝 𝐿𝑝
𝒒𝑽𝑬𝑩
𝒒𝑨𝑫𝒑 𝒑𝒏 𝒆 𝒌𝑻 𝑳𝒑 𝑾
26. Thus, we have: 𝑰𝑪 ≈ − 𝟔𝑳𝒃
𝑳𝒑 𝑾𝒃 𝒑
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 DC Current Modeling
27. For 𝐼𝐸 , we follow a similar approach as done from #21
onwards, viz.: 𝐼𝐸 = 𝐼𝑝 𝑥𝑛 = 0
𝑞𝐴𝐷𝑝
28. From #18 and #27, we have: 𝐼𝐸 = 𝐶2 − 𝐶1
𝐿𝑝
29. Using #18’s expression for 𝐶2 − 𝐶1 in #28, we get:
𝑞𝐴𝐷𝑝 𝑞𝑉𝐸𝐵 𝐿𝑝 𝑊𝑏2
𝐼𝐸 = 𝑝𝑛 𝑒 𝑘𝑇 1+ 2
𝐿𝑝 𝑊𝑏 3𝐿𝑝
𝒒𝑽𝑬𝑩
𝒒𝑨𝑫𝒑 𝒑𝒏 𝒆 𝒌𝑻 𝑳𝒑 𝑾𝒃
30. Thus, we have: 𝑰𝑬 = +
𝑳𝒑 𝑾𝒃 𝟑𝑳𝒑
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 DC Current Modeling
31. We can easily calculate 𝐼𝐵 using KCL, since: 𝐼𝐵 = 𝐼𝐸 − 𝐼𝑐
32. From #26, #30 and #31, we have:
𝑞𝑉𝐸𝐵 𝑞𝑉𝐸𝐵
𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝐿𝑝 𝑊𝑏 𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝐿𝑝 𝑊𝑏
𝐼𝐵 = + − −
𝐿𝑝 𝑊𝑏 3𝐿𝑝 𝐿𝑝 𝑊𝑏 6𝐿𝑝
𝑞𝑉𝐸𝐵 𝑞𝑉𝐸𝐵
𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝑊𝑏 𝑊𝑏 𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝑊𝑏
∴ 𝐼𝐵 = + =
𝐿𝑝 3𝐿𝑝 6𝐿𝑝 𝐿𝑝 2𝐿𝑝
𝒒𝑽𝑬𝑩
𝒒𝑨𝑫𝒑 𝑾𝒃 𝒑𝒏 𝒆 𝒌𝑻
30. Thus, we have: 𝑰𝑩 =
𝟐𝑳𝟐𝒑
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 Amplification Factor 𝛼
• Having obtained expressions for 𝐼𝐸 , 𝐼𝐶 and 𝐼𝐵 , we can calculate the 2 gain factors:
𝑞𝑉𝐸𝐵
𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝐿𝑝 𝑊𝑏 𝐿𝑝 𝑊𝑏
𝐿𝑝 −
𝑊𝑏 6𝐿𝑝 −
𝐼𝐶 𝑊𝑏 6𝐿𝑝
𝛼= = =
𝐼𝐸 𝑞𝑉𝐸𝐵 𝐿𝑝 𝑊𝑏
𝑞𝐴𝐷𝑝 𝑝𝑛 𝑒 𝑘𝑇 𝐿𝑝 𝑊𝑏 +
+ 𝑊𝑏 3𝐿𝑝
𝐿𝑝 𝑊𝑏 3𝐿𝑝
𝑊2
1− 𝑏2
6𝐿𝑝 𝑊𝑏2 𝑊𝑏2 1
∴𝛼= 𝑊2
≈ 1− 1 − 3𝐿2 since 𝑊𝑏 ≪ 𝐿𝑝 and ≈ 1 − 𝑥 when 𝑥 ≪ 1
6𝐿2𝑝 𝑝 1+𝑥
1+ 𝑏2
3𝐿𝑝
𝑊𝑏2 𝑊𝑏4
∴𝛼 =1− 2𝐿2𝑝
+ 18𝐿4𝑝
Neglecting the red term (since 𝑊𝑏 ≪ 𝐿𝑝 ), this simplifies to:
𝑾𝟐𝒃
𝜶=𝟏− 𝟐𝑳𝟐𝒑
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 Amplification Factor 𝛽
• Similarly:
𝑊𝑏2
1−
𝐼𝐶 𝛼 2𝐿2𝑝
𝛽= = =
𝐼𝐵 1 − 𝛼 𝑊𝑏2
2𝐿2𝑝
2𝐿2𝑝 2𝐿2𝑝
∴𝛽= − 1≈ since 𝑊𝑏 ≪ 𝐿𝑝
𝑊𝑏2 𝑊𝑏2
𝟐𝑳𝟐𝒑
∴𝜷=
𝑾𝟐𝒃
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 Amplification Factors 𝛼 and 𝛽
• Thus we have:
𝑰𝑪 𝑾𝟐𝒃 𝑰𝑪 𝟐𝑳𝟐𝒑
𝜶= =𝟏− and 𝜷 = =
𝑰𝑬 𝟐𝑳𝟐𝒑 𝑰𝑩 𝑾𝟐𝒃
• As can be seen, when 𝑊𝑏 ≪ 𝐿𝑝 , we will have 𝛼 → 1 and
𝛽 ≫ 1, both hallmarks of a good transistor. Thus,
analytical modeling is in agreement with the qualitative
picture we discussed in the last lecture where we said
that the base needs to be very narrow compared to the
minority carrier diffusion length in the base region
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 Regions of Operation
• Cut-Off: Both junctions reverse-biased (ie.
𝑉𝐵 < 𝑉𝐸 , 𝑉𝐶 for a NPN transistor, or
𝑉𝐵 > 𝑉𝐸 , 𝑉𝐶 for a PNP transistor)
• Saturation: Both junctions forward-biased
(ie. 𝑉𝐵 > 𝑉𝐸 , 𝑉𝐶 for a NPN transistor, or
𝑉𝐵 < 𝑉𝐸 , 𝑉𝐶 for a PNP transistor)
• Forward-Active: BE-junction forward-
biased, and BC-junction reverse-biased (ie.
𝑉𝐶 > 𝑉𝐵 > 𝑉𝐸 for a NPN transistor, or
𝑉𝐶 < 𝑉𝐵 < 𝑉𝐸 for a PNP transistor)
• Reverse-Active: BC-junction forward-
biased, and BE-junction reverse-biased (ie.
𝑉𝐶 > 𝑉𝐵 > 𝑉𝐸 for a PNP transistor, or
𝑉𝐶 < 𝑉𝐵 < 𝑉𝐸 for a NPN transistor)
Operating Quadrants for a NPN transistor
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Generalized biasing: Ebers-Moll Model
• We assumed several things in the modeling approach till now has, notably:
• Uniform cross section area
• Perfect emitter injection efficiency 𝛾 = 1
• Forward active mode of biasing (ie. BE junction forward-biased and BC junction reverse-
biased)
• Zero reverse saturation current 𝐼0 of both junctions
• These are never true in real transistors:
• Structurally, the emitter is usually a much smaller region than the collector and the BE
and BC junction areas not equal. Nor is the transistor action one-dimensional. There is
also non-negligible reverse injection from base to emitter (injection efficiency 𝛾 < 1),
and lastly, there is non-negligible reverse saturation current of reverse biased BC
junction when biased in forward active mode
• Operationally, there are applications (e.g. switching), where the transistor is not biased in
the forward active mode (which renders approximations like Δ𝑝𝐶 = 𝑝𝑛 𝑒 𝑞𝑉𝐶𝐵 /𝑘𝑇 − 1 ≈
− 𝑝𝑛 invalid)
• The Ebers-Moll model was developed as a coupled-diode model to be valid over
a wide range of biases and structural non-idealities
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Ebers-Moll DC Model for a PNP Xtor

• 𝛼𝑅 and 𝛼𝐹 are model

parameters
• The two diodes also
have their own
independent model
parameters (reverse
saturation currents
and ideality factor)

Note: The model shown in the Streetman text in Fig 7-11 is slightly inaccurate

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Typical I-V characteristics

Typical 𝐼𝐶 − 𝑉𝐶𝐸 characteristics of a realistic NPN BJT

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 MOSFET Versus BJT I-V Curves
(Triode aka Linear)

Realistic NMOSFET Realistic NPN BJT

Note: Notice how the saturation regime is different in MOSFET versus BJT
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 BJT AC Small Signal Model (SSM)
• Shown alongside is the
hybrid-𝝅 model of a NPN BJT
xtor, including all parasitic
resistances and capacitances
𝜕𝐼
• Transconductance 𝑔𝑚 = 𝜕𝑉 𝑐
𝑏𝑒
• 𝑔𝑐𝑒 models the Early effect
(rise of 𝐼𝑐 in the active region)
• 𝑟𝑏𝑏 is called the base
spreading resistance
• The capacitances are due to
the BE and BC PN-junctions
• 𝑟𝑏′ 𝑒 and 𝑟𝑏′ 𝑐 model the
reverse saturation currents of
the BE and BC junctions
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END OF LECTURE

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