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Do An 1
Do An 1
N MN HC 1
cng sut m tn
GVHD: Thy INH QUC HNG SVTH: PHM DUY THNH V PHNG THO LP : DD06DV03 40602230 40602267
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````LI CM N
Em xin by t lng bit n n thy INH QUC HNG trn cng v l ngi hng dn chnh ca ti tn tnh gip trong sut qu trnh thc hin n. Em cng xin by t lng bit n n cc thy c trong trng i Hc Bch Khoa TP HCM tn tnh dy d v truyn th nhng kinh nghim qu bu trong sut thi gian qua. Cui cng em xin chn thnh cm n s ng gp kin ca tt c cc bn sinh vin trong sut qu trnh thc hin n.
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MC LC:
I/ C S L THUYT
1/ Kho st mch khuch i cng sut lp B..4 2/ Cc dng mch ca mch cng sut lp B6 Mch cng sut push-pull lin lc bng bin th..6 Mch cng sut kiu i xng- b.7
3/ Mt s mch khuch i cng sut m tn..9 Mch OTL Mch OCL Mch BTL
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Phn I: C s l thuyt
1/ Kho st mch khuch ai cng sut lp B
Trong mch khuch i cng sut loi B, ngi ta phn cc vi VB =0V nn bnh thng transistor khng dn in v ch dn in khi c tn hiu ln a vo. Do phn cc nh th nn transistor ch dn in c mt bn k ca tn hiu (bn k dng hay m ty thuc vo transistor NPN hay PNP). Do mun nhn c c chu k ca tn hiu ng ra ngi ta phi dng 2 transistor, mi transistor dn in mt na chu k ca tn hiu. Mch ny gi l mch cng sut y ko (push-pull).
Cng sut cung cp: (cng sut vo) Ta c: Pi(dc) = VCC . IDC Trong IDC l dng in trung bnh cung cp cho mch. Do dng ti c 2 bn k nn nu gi Ip l dng nh qua ti , ta c:
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Dng ngun i
Dng ngun n
V VL(p)= Vcc, nn hiu sut ti a: Cng sut tiu tn trn 2 transistor cng sut: Pc= Pi(ac)- P0(ac)
Vy cng sut tiu tn trn mi con TST cng sut: PC1 =PC2= PC /2 Cng sut ra s ti a khi Vcc= VL, khi : Po(ac)max=
V dng nh l: ILmax=
AMH1 Tr ti a ca dng trung bnh l: IDCmax= (2/).ILmax= Tr ti a ca cng sut ng vo: PDCmax= Vcc. IDCmax Pi(DC)max= Hiu sut ti a ca mch khuch i cng sut lp B l:
- Trong bn k dng ca tn hiu, Q1 dn. Dng i1 chy qua bin th ng ra to cm ng cp cho ti. Lc ny pha ca tn hiu a vo Q2 l m nn Q2 ngng dn. - n bn k k tip, tn hiu a vo Q2 c pha dng nn Q2 dn. Dng i2 qua bin th ng ra to cm ng cung cp cho ti. Trong lc pha tn hiu a vo Q1 l m nn Q1 ngng dn. i1 v i2 chy ngc chiu nhau trong bin th ng ra nn in th cm ng bn cun th cp to ra bi Q1 v Q2 cng ngc pha nhau, chng kt hp vi nhau to thnh c chu k ca tn hiu.
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Thc t, tn hiu ng ra ly c trn ti khng c trn vn nh trn m b bin dng. L do l khi bt u mt bn k, transistor khng dn in ngay m phi ch khi bin vt qua in th ngng VBE. S bin dng ny gi l s bin dng xuyn tm (cross-over). khc phc, ngi ta phn cc VB dng mt cht (th d transistor NPN) transistor c th dn in tt ngay khi c tn hiu p vo chn B. Cch phn cc ny gi l phn cc loi AB. Ch l trong cch phn cc ny dn in ca transistor cng sut khng ng k khi cha c tn hiu Ngoi ra, do hot ng vi dng IC ln, transistor cng sut d b nng ln. Khi nhit tng, in th ngng VBE gim (transistor d dn in hn) lm dng IC cng ln hn, hin tng ny chng cht dn n h hng transistor. khc phc, ngoi vic phi gii nhit y cho transistor, ngi ta mc thm mt in tr nh (thng l vi ) hai chn E ca transistor cng sut xung mass.Khi transistor chy mnh, nhit tng, IC tng tc IE lm VE tng dn n VBE gim. Kt qu l transistor dn yu tr li. 2.2/ Mch cng sut kiu i xng - b: Mch ch c mt tn hiu ng vo nn phi dng hai transistor cng sut khc loi: mt NPN v mt PNP. Khi tn hiu p vo cc nn ca hai transistor, bn k dng lm cho transistor NPN dn in, bn k m lm cho transistor PNP dn in. Tn hiu nhn c trn ti l c chu k.
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Cng ging nh mch dng bin th, mch cng sut khng dng bin th mc nh trn vp phi s bin dng cross-over do phn cc chn B bng 0v. khc phc, ngi ta cng phn cc mi cho cc chn B mt in th nh (dng i vi transistor NPN v m i vi transistor PNP). n nh nhit, 2 chn E cng c mc thm hai in tr nh.
Trong thc t, tng cng sut ca mch, ngi ta thng dng cc cp Darlington hay cp Darlington_cp hi tip.
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GVHD:inh Quc Hng u v khuyt im ca mch OTL: u: tit kim do ch s dng 1 ngun n Khuyt: - Mo tn s thp do t Cc gy ra ( do gia tr ca t ko tin ti -
Mo phi tuyn ln, do 2 TST ko phi lc no cng i xng, cng bng Vcc/2 Bng thng b co hp do nh hng ca t Cc Mch khuch i OCL:
Mch khuch i OCL khc phc c cc u im ca mch khuch i cng sut OTL Mch khuch i BTL: b khuch i cng sut m tn ln, to thnh bng cch mc cu cc b khuch i cng sut m tn lp B: OTL hay OCL
Vi cng thc tnh trn b qua nh hng ca in tr R13 (st p trn R13) Do c st p trn ng dy xem h s s dng in p ca ngun l 0,9.
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* Tng cng sut hot ng ch AB nn Q5Q6 v Q7Q8 lun phin hot ng mi bn k, xt hot ng ca mt cp transistor Q5Q6, cn Q7Q8 tng ng i xng qua. Chn transistor Q6 v Q8: Cng sut tiu tn trn transistor Q6 v Q8: 2PC = PCC - PL
(*)
Gi tr
=Icm. RL Icm=
1.43
= 8.207
Thng khi chn transistor ta chn TST c : T , ta chn cng sut TST b ph TIP41( NPN) v TIP42(PNP), dng lm transistor cng sut tng cng sut
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Tnh R13, R14 R13, R14 t nh hng n hiu sut ca mch cn chn R13, R14 c gi tr rt nh so vi RL Chn R13= R14= 0,1 Cng sut tiu tn trung bnh trn tr R13( R14) phi chu PRTB= R13. =0,1. ^2 =R13 . =0,037W
Chn R13 , R14 l tr cng xut 1W. Chn Q5, Q7, R11, R12 Q6 v Q8 lun hot ng khi c tn hiu vo, ta phn cc sao cho dng DC ca Q6 v Q8 khong 50mA ( v TIP ch bt u hot ng v I= 30mA) Da vo datasheet ca TIP41, TIP42, ta xc nh c : VBE=0,5; Ic= 2A => hfe= 50
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Chn dng phn cc DC cho Q5 v Q7 l ICQ5= ICQ7= 20mA Ta c: R11.( 20- Ib6) = VBE +R13.( 50mA+ R11.( 20- 15,1) = 0,5 + 0,1.( 50mA+ ) )
R11= 115,5 Nh vy, chn R11 =R12= 120 IC5(peak) =.( ICQ5 ) + ICQ5 .
= 63mA
Pcmax = 0,5. Vcc. ICQ5 0,5. ICQ. Rac 0,5. Vcc. ICQ5 =0,5 . 18.20mA = 0,18W Chn transistor Q5 v Q7 l cp b ph MJE 340 v MJE 350, c cc thng s theo datasheet nh sau:
2/ TNG TIN KHUCH I: 4 diode D1 D4 b nhit 4 mi ni BE v phn cc DC cho cp TST Q5 v Q7, trnh hin tng mo xuyn tm. Chn diode c: V =VBE 0,5V Vac= VBE5 + VBE6 + R13. ICQ6 = 0,6 + 0,5+ 0,1 .0,76 =1,2V VAA= 1,2.2= 2,4V Theo datasheet ca MJE 340 v MJE 350, chn hfe =55
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ICQ5 = ICQ7 =15,1mA IBQ5 = IBQ7= = 0,27mA IBQ(peak) = . 0,27 =0,86mA Chn ICQ6 =6mA 4 diode: chn D1N4148 c cc thng s
4 diode ny, ngoi cng dng n nh in th phn cc cho cp TST cng sut, cn c nhim v lm ng cptn hiu cho Q5 v Q7 R8, R9 c tc dng to dng phn cc dc cho cc TST, diode ( Dng ICQ4 khng qu ln => tn hao cng sut V khng qu nh => phn cc DC => trnh mo nhiu ) Ta c: VCEQ4= 2Vcc ICQ4.( R8+ R9 + R10) = 2Vcc ICQ4. RDC Vi RDC = R8+ R9 + R10 Rac = R8+ R9 Xt iu kin Maxswing, VCEQ4 =Vcc gim tn tht dng tn hiu ra loa, chn R8 RL Chn R8 =510 V Vc =0 ( khi mch cn bng) R8+ R9 = = = 2,8k R9= 2.2k R10 = (VR2- VBE4)/ ICQ4= 270 in tr R8 kt hp vi t C5 to ra ng hi tip t c ( mch bootstrap) c tc dng cn bng tn hiu ko y ng ra.
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I BQ 4
Chn ICQ1 = ICQ2 = 2 mA ICQ3 = 2 ICQ1 = 2mA Chn Diode Zener c Vz= 3,1V
I CQ4 h fe
rt nh
VRv 2
V Iz>> IBQ3.Chn Iz = 5 mA.
Khi Diode Zener tha yu cu nu : chn D1N4684 R5 c tc dng phn p VCC, to phn cc DC cho Q3 : Chn R5 = 1.2k => R4
Chn R4=1k Vi tng vis ai Q1 v Q2 : Chn VECQ1=VECQ2 VCC=18V ICQ1 = ICQ2 = 1 Ma v Q3 to ngun dng c : VECQmax=Vcc=18V ICQ3= 2mA Chn Q1,Q2,Q3 l Q2SA1015 , c cc thng s theo datasheet :
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hie1 hie 2
Ta c 0,6 + 6x270 = 1 x R2 R2 = 2.22k Chn R2=2.2k
mx25 xh fe I CQ
mch vi sai trit nhiu tt,ta phn cc cho Q1 v Q2 ging nhau : ICQ1= ICQ2 VCEQ1= VCEQ2 Ta chn R2= R3=2.2k li yu cu : Af = 150300 (vi Vi=100mV) M Av
R6 150 R7
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hie1 hie2
1,4 x 25 x 200 7k 1
hie 4
AV
T
=-21
Avf
Av 220 1T
Z if Z in x(1 T ) 330k
4/ TNH THNG S CC T: a/ T ct tn s thp C7 v t C4 :
T C7 :
2 . f c1
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C7
C7= 498
Chn gi tr ca t C7= 470 T C4 : T C7 c tc dng ngn DC, AC, n phi c gi tr sao cho khi hoat ng trong di thng t 20hz n 20KHz, li gim khng qu 3dB, ngha l :
> Zc4 <0,42k Chn C4= 100 b/ T ct tn s cao : Chn theo m phng C5 =470pF c/ T boostrap : to hi tip dng cho Q2, mc ch nng bin tng s thp Chn gi tr ca t l C6=100F ( chn theo m phng) d/ T lc ngun : Chn C3 =220F T lc tn hiu u vo : C2=10F S thit k :
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AMH1 Kim tra ch AC ca tng vi sai: Dng sng ng ra trn Q1 f=1 kHz
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AMH1 Kim tra ch AC trn tng cng sut :Kim tra trn ti RL f= 1kHz
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AMH1 f= 20kHz
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