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N-Channel 30-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • TrenchFET® Power MOSFET
VDS (V) RDS(on) () ID (A) a, e Qg (Typ) • 100 % Rg and UIS Tested
0.012 at VGS = 10 V 50 • Compliant to RoHS Directive 2011/65/EU
30 25 nC
0.018 at V GS = 4.5 V 45
APPLICATIONS
D
• OR-ing
• Server
D2PAK • DC/DC
(TO-263)

G
G
D
S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 50
TC = 70 °C 46
Continuous Drain Current (TJ = 175 °C) ID
TA = 25 °C 27 b, c
A
TA = 70 °C 21b, c
Pulsed Drain Current IDM 210
Avalanche Current Pulse IAS 39
L = 0.1 mH
Single Pulse Avalanche Energy EAS 94.8 mJ
TC = 25 °C 50a, e
Continuous Source-Drain Diode Current IS A
TA = 25 °C 3.13b, c
TC = 25 °C 120a
TC = 70 °C 85
Maximum Power Dissipation PD W
TA = 25 °C 3.75b, c
TA = 70 °C 2.63b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit
Maximum Junction-to-Ambient b, d t  10 sec RthJA 32 40
°C/W
Maximum Junction-to-Case Steady State RthJC 0.5 0.6
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V
VDS Temperature Coefficient VDS/TJ 35
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient VGS(th)/TJ - 7.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 30 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 90 A
VGS = 10 V, ID = 28.8 A 0.012
Drain-Source On-State Resistancea RDS(on) 
VGS = 4.5 V, ID = 37 A 0.018
Forward Transconductancea gfs VDS = 15 V, ID = 28.8 A 160 S
Dynamicb
Input Capacitance Ciss 1201
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 255 pF
Reverse Transfer Capacitance Crss 170
VDS = 15 V, VGS = 10 V, ID = 28.8 A 35
Total Gate Charge Qg
25
nC
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 15
Gate-Drain Charge Qgd 20
Gate Resistance Rg f = 1 MHz 1.4 2.1 
Turn-On Delay Time td(on) 18 27
Rise Time tr VDD = 15 V, RL = 0.625  11 17
Turn-Off Delay Time td(off) ID  24 A, VGEN = 10 V, Rg = 1  70 105
Fall Time tf 10 15
ns
Turn-On Delay Time td(on) 55 83
Rise Time tr VDD = 15 V, RL = 0.67  180 270
Turn-Off Delay Time td(off) ID  22.5 A, VGEN = 4.5 V, Rg = 1  55 83
Fall Time tf 12 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C 120
A
Pulse Diode Forward Currenta ISM 120
Body Diode Voltage VSD IS = 22 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr 52 78 ns
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 27
ns
Reverse Recovery Rise Time tb 25
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

90 3.0
VGS = 10 V thru 4 V
75
2.4
I D - Drain Current (A)

I D - Drain Current (A)

60
1.8

45

1.2
30
TC = 25 °C
0.6
15 TC = 125 °C
VGS = 2 V VGS = 3 V
TC = - 55 °C
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

600 0.0 30

TC = 25 °C
500 0.025
R DS(on) – On-Resistance (Ω)
G fs - Transconductance (S)

TC = 125 °C
400 0.020 VGS = 4.5 V

300 0.015

TC = - 55 °C VGS = 10 V
200 0.010

100 0.005

0 0.00
0 10 20 30 40 50 60 70 80 90 0 15 30 45 60 75 90
ID - Drain Current (A) ID - Drain Current (A)

Transconductance RDS(on) vs. Drain Current

1500 10

ID = 28.8 A VDS = 15 V
Ciss
V GS - Gate-to-Source Voltage (V)

1200 8
C - Capacitance (pF)

VDS = 24 V
900 6

600 4

Coss
300 2

Crss
0 0
0 6 12 18 24 30 0 30 60 90 120 150 180
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1.2 100
VGS = 10 V, ID= 38.8 A
R DS(on) - On-Resistance (Normalized)

VGS = 4.5 V, ID = 27 A
1.0 10

I S - Source Current (A)

0.8 1
T J = 150 °C
T J = 25 °C
0.6 0.1

0.4 0.01

0.2 0.001
- 50 - 25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Forward Diode Voltage vs. Temperature

0.005 2.8
ID = 38.8 A

0.004 TA = 125 °C 2.4

RDS(on) -On-Resistance (Ω)

V GS(th) Variance (V)

ID = 250 µA
0.003 2.0

TA = 25 °C
0.002 1.6

0.001 1.2

0.000 0.8
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C)
RDS(on) vs. VGS vs. Temperature Threshold Voltage

1000

*Limited by rDS (on)

100
I D - Drain Current (A)

10 10 ms
100 ms
1
1s
10 s
0.1 dc

0.01
TA = 25 °C
Single Pulse
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

300 300

250 250
ID - Drain Current (A)

Power Dissipation (W)

200 200

150 150

Package Limited
100 100

50 50

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC - Case Temperature (°C) TC - Case Temperature (°C)
Current Derating* Power Derating

*The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1

0.1

0.05
0.02

Single Pulse

0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case

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TO-263AB (HIGH VOLTAGE)

A
(Datum A)
3 4 A A B
E c2
H
4 L1 4 Gauge
plane
0° to 8° B
D 5 Detail A Seating plane
H
C C L A1
1 L3 L4
2 3
Detail “A”
L2
Rotated 90° CW
B B
scale 8:1

A
2 x b2
2xb c
E
0.010 M A M B
± 0.004 M B
2xe
Base
5 metal D1
Plating 4
b1, b3

(c) c1 5

(b, b2)
Lead tip Section B - B and C - C E1 4
Scale: none View A - A

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

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RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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