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Chen 2008
Chen 2008
61
62 C.-H. Chen, Lin, and C.-M. Chen
diagram, but mostly only Cu5Zn8 can form.10–16 for top-view examinations. An image processing
In previous reports,10–16 the Cu substrate was system was used to measure the cross-sectional area
usually in bulk form and, thus, the supply of Cu for of the reaction products and the linear length of the
interfacial reactions was abundant. In our recent solder/Cu interface. We determined the average
work, it was found that CuZn5 becomes the domi- thickness of the reaction products by dividing the
nant reaction product when the Cu substrate is cross-sectional area by the linear length.
converted to thin-film type with a thickness of only
4000 Å.17 Obviously, the Zn-rich CuZn5 phase RESULTS
replaces the Cu5Zn8 phase when the supply of Cu is
Figure 1 shows a series of scanning electron
limited. In other words, the thickness of the Cu
micrographs of the solder/Cu interface after reflow
substrate should play an important role in the
for 1–60 min.17 The thickness of the Cu substrate is
Sn-9Zn/Cu interfacial reaction. To gain a detailed
0.5 mm. Two compounds were formed at the inter-
understanding of the effect of Cu substrate thick-
face after reflow for 1 min, as shown in Fig. 1a.
ness on the Sn-9Zn/Cu interfacial reaction, we
According to the compositional analysis of FEE-
investigated Cu substrates of various thickness in
PMA, the compound adjoined to the solder was
the work now described. Since Cu substrates with a
identified as the CuZn5 phase and that adjacent to
thickness of 4000 Å and 0.5 mm were examined in
the Cu substrate was Cu5Zn8. Upon increasing the
our previous work,17 to make a more detailed com-
reflow time, the Cu5Zn8 phase grew at a much faster
parison, we have used part of those results in the
rate than the CuZn5 phase, as seen in Fig. 1b and c.
discussion here.
This significant difference in the growth rates of the
two phases can also be seen in Fig. 2, which depicts
EXPERIMENTAL
the relationship between the compound thickness
Sn and Zn shot of 99.99% purity were used to and the reflow time. Although the CuZn5 phase did
prepare the Sn-9Zn solder. Suitable amounts of Sn not display noticeable growth (compared with that
and Zn shot were weighed according to the solder of the Cu5Zn8 phase), a remarkable change in its
composition and sealed in a vacuum quartz tube. grain structure is observed in Fig. 3a–c. The top-
These shot were put into a furnace at 450°C for 72 h view scanning electron micrograph in Fig. 3a
to reach homogeneity. Then, the molten solder alloy reveals that the grain size of the CuZn5 phase is
was quenched in ice water. A small piece of solder fairly uniform and the grain structure is rounded
(5 mg) was cut from the solidified ingot. The piece after 1 min of reflow, while the grain size in Fig. 3c
was cleaned and placed on a flux-coated [rosin becomes extremely non-uniform after 10 min of
mildly activated (RMA) flux] Cu substrate. Cu sub- reflow. Some grains grew as big as several
strates of five thicknesses were prepared: 4000 Å; micrometers, while the rest remained smaller than
3 lm; 6 lm; 10 lm; and 0.5 mm. The 4000 Å Cu those shown in Fig. 3a. These bigger grains display
substrate was prepared by sputtering a Cu thin film a faceted structure, which was different from the
of the desired thickness on an oxidized Si chip. To initial rounded shape seen in Fig. 3a. After reflow
improve adhesion of the Cu thin film with the oxi- for 60 min, as seen in Fig. 1d, the CuZn5 phase
dized Si, a Ta thin film of 200 Å thickness was disappeared and only the Cu5Zn8 phase was found
sputtered prior to the Cu deposition. The Cu sub- at the interface. The top-view scanning electron
strates of thicknesses from 3 lm to 10 lm were micrograph in Fig. 3d reveals that the Cu5Zn8
obtained by electroplating Cu onto an oxidized grains are fine and faceted.
Si chip after the above-mentioned Cu/Ta deposition. Figure 4 comprises the scanning electron micro-
A Cu plate 0.5 mm thick was purchased and then graphs of the solder/Cu interface after reflow, in
cleaned, polished, and used directly. which the thickness of the Cu substrate is 10 lm.
To conduct the reflow reaction, we placed the Cu After 10 min of reflow, as seen in Fig. 4a, two com-
substrate, with a solder piece on its surface, on a hot pounds were formed at the interface. Electron probe
plate at a constant temperature of 230°C. The microanalysis (EPMA) indicated that the two com-
duration of reflow ranged from 1 min to 60 min. pounds were also CuZn5 and Cu5Zn8 phases. The
After reaction, the sample was mounted in epoxy compound formation and grain structure are similar
resin and examined metallographically. The sample to those in Fig. 1c for the Cu substrate of 0.5 mm
was ground and polished to expose the cross-section thickness. It can be seen that the Cu substrate was
of the solder/Cu interface. Field-emission scanning not consumed completely. After reflow for 60 min,
electron microscopy (FESEM) was used to observe only the Cu5Zn8 phase remained at the interface,
the microstructure of the solder/Cu interface. Field- and the Cu substrate had been completely con-
emission electron probe microanalysis (FEEPMA) sumed, as seen in Fig. 4b. The results from the Cu
was used for the compositional analysis of the substrate of 6 lm thickness are similar to those
reaction products formed at the solder/Cu interface. from 10 lm thickness and, thus, are not shown
The sample was also dipped into an etching solu- here.
tion, 93% CH3OH + 2% HNO3 + 5% HCl, to remove When the thickness of the Cu substrate was
the entire solder and expose the reaction products reduced to 3 lm, both the CuZn5 and Cu5Zn8 phases
Effect of Cu Thickness on the Evolution of the Reaction Products at the Sn-9wt.%Zn Solder/Cu 63
Interface During Reflow
DISCUSSION
Morphological Evolution of the CuZn5 Grain
As seen in Fig. 3, the CuZn5 grain size is uniform
for a shorter reflow time but gradually becomes non-
uniform with increasing reflow time. The bigger
grains in Fig. 3c are likely to have preferential
growth orientations, since they exhibit a faceted
structure and grow at a much faster rate than the
rest of the smaller grains. The presence of a faceted
grain structure and preferential growth orienta-
tions suggests that the interfacial energy between
the CuZn5 phase and the molten solder is likely to
be anisotropic. For a shorter reflow time, as seen in
Fig. 3a, however, the CuZn5 grains exhibit a roun-
ded shape, suggesting that the interfacial energy at
the early stage of reflow is likely to be isotropic. The
above comparison implies that the type of interfa-
cial energy of the solder/CuZn5 interface has a
strong dependence on the length of reflow time.
During the solder/Cu interfacial reaction, Cu-Zn
compounds are formed at the interface and simul-
Fig. 1. Scanning electron micrographs of the solder/Cu interface taneously consume Zn in the solder. At the early
after reflow at 230°C for (a) 1 min, (b) 5 min, (c) 10 min,17 and stage of reflow, Zn consumption is insignificant,
(d) 60 min,17 in which the thickness of the Cu substrate is 0.5 mm. because the Cu-Zn compounds are thin. Hence, the
solder composition near the interface could be very
close to the initial Sn-9Zn composition. When the
were also formed at the solder/Cu interface after reflow time is increased, more Zn atoms are con-
reflow for 5 min, as seen in Fig. 5a. Meanwhile, the sumed with the growth of the Cu-Zn compounds,
Cu substrate had been completely consumed. After and the solder composition will change accordingly.
reflow for 60 min, the two compounds still existed at To understand the change of the solder composition,
64 C.-H. Chen, Lin, and C.-M. Chen
Fig. 2. Relationships between the compoundsÕ thicknesses and the reflow time.
we produced scanning electron micrographs of lower composition can occur, due to the continuous con-
magnification, as seen in Fig. 8, to display the sumption of Zn. In contrast, if the Cu supply is very
interior microstructure of the solder. Obviously, the limited, for example, in the case using a thin Cu
microstructure is significantly changed with substrate of only 4000 Å thickness (Fig. 6), the
increasing reflow time, indicating that the solder consumption of Zn will be very limited. This might
composition indeed changes. Shown in Fig. 9 is the merely result in a slight change of the solder com-
Sn-rich region of the Sn-Zn binary phase diagram.19 position, so the solidification behavior could be
The eutectic SnZn alloy contains 91.2 wt.% Sn and described by line (A) in Fig. 9. This argument is
8.8 wt.% Zn, so the initial composition of the solder consistent with the results shown in Fig. 6, where
is in the hypo-eutectic region. As the solder is cooled the primary Zn precipitates were formed near the
after reflow, the solidification path will follow the solder/CuZn5 interface. Owing to the negligible
line (A), so the primary Zn phase would precipitate change of solder composition, the solder/CuZn5
out first. From the microstructure observation of interfacial energy could remain isotropic. Therefore,
Fig. 8a, it can be seen that, before 5 min of reflow, the CuZn5 grains on the 4000-Å Cu substrate
primary Zn precipitates (black spots) exist in the retained a rounded shape during reflow, as seen in
solder, suggesting that this solder composition is Fig. 7.
located in the hypo-eutectic region. When the reflow
time is increased, more Zn atoms are consumed with
Effect of Cu Substrate Thickness
the growth of the Cu-Zn compounds. The solder
on the Reaction Products
composition would change and might shift to the
hyper-eutectic region, that is, to the pure Sn corner. Based on the experimental results, it can be seen
Then, the solidification path changes to line (B), and that, at the early stage of reflow, both CuZn5 and
the primary phase that solidifies first becomes the Cu5Zn8 phases are formed, regardless of the fact
Sn phase. This is in good agreement with the SEM that the Cu substrate is only 4000 Å thin or as thick
observation in Fig. 8b and c, where the primary Sn as 0.5 mm. With increasing reflow time, the two
phase is observed in the solder after 10 min of phases display different growth rates on different
reflow. Since the solder composition changes with Cu substrates. On the Cu substrates 6 lm, 10 lm,
increasing reflow time, that is, from Sn-9Zn to pure and 0.5 mm thick (denoted as ‘‘thicker Cu’’ hereaf-
Sn, the solder/CuZn5 interfacial energy might be ter), the Cu5Zn8 phase grows dominantly, as seen in
affected accordingly. Based on the morphological Fig. 2. The dominant reaction product becomes
evolution of the CuZn5 grain, the type of interfacial CuZn5 when the thickness of the Cu substrate is
energy is likely to be transformed from isotropic to reduced to 3 lm and 4000 Å (denoted as ‘‘thinner
anisotropic. Cu’’ hereafter). The results indicate that the type of
It must be noted that, in Fig. 1, the Cu supply is dominant reaction product in the Sn-9Zn/Cu inter-
abundant, because the Cu substrate is thick. With facial reaction is significantly affected by the
abundant Cu supply, the Cu-Zn compounds can thickness of the Cu substrate.
continuously grow by the reaction between Cu On the thicker Cu substrates, it is also found that,
and Zn. Thus, a significant change of the solder although the CuZn5 phase is formed at the early
Effect of Cu Thickness on the Evolution of the Reaction Products at the Sn-9wt.%Zn Solder/Cu 65
Interface During Reflow
Fig. 10. Isothermal section of ternary Sn-Zn-Cu system at 230°C.20 Lines A and B are diffusion paths, L means liquid, a is the location of the
composition of Sn-9wt.% (15.6 at.%) Zn alloy, and b is that of SnZn alloy with Zn concentration less than 9 wt.%.
68 C.-H. Chen, Lin, and C.-M. Chen