ee ay ee LAKSHYA NEEV Crave eer a avaR nrc SR TU mie MITES Price Drop 20 % on all Batches sively elle Mes eC a Get Discount : Use Code: ANKITESE ANKIT GOYAL SIRElectrical Machines 2. Comprehensive Course yal ela lols) Gey ely om i fay = a A Flat ad ve Discount nd es es Offer valid for Limited Period / Sas ay ale ANKIT GOYAL SIR Electrical Engineering BRC]Test Series err cny Nariel 7089047561 ay Offer valid for aT EY C Limited Period H ¢ 10 Mock Tests e 2 Part Tests per subject @ 2 Subject Tests per Subject © Total Number of tests ~ 58 Tests Get Discount on all the course Use y 4 One Man Army for ANKIT GOYAL SIR Electrical Engineering BAR ney VE =w aMTSE TCS | on GATE 2024 Batch and Test Series Gate Blaster 2024 Test Series Lesss than 1000 1000 - 2000 30% 2000 - 3000 20% 3000 - 8000 15% Whatsapp on 7089047561 for the Crack GATE under DISCOUNT CODE paula ANKIT GOYAL SIR ) aR eC UaSCOTT CM Ch (i) MOSFET with drain shorted to gate. “ (ii) Depletion MOSFET with gate shorted to source (iii) MOSFET current Mirror — Fabrieaking resistoy or Capacitor on om Integrated Cinouit requites large chip Grea vo WE can fabricate MosF ET which com act a8 am active load:Cea et td -_ |( MOSFET with drain shorted to gate | D Ve=Vo . Veg = Vs = Vx te Me + Gm Vk = Raw Vas - ti = n+ Sotusati Vx - d ¢" %, SsSea tg \ys=0 _ only dep: MOS Current sowre, gnu =0 L, open ekt B Koor > VsEXAM DOST Sea tg Caseode in BIT Ce-CcB amp* —> wideband amp CS-CG amp”EXAM SCOTT CM Ch a * fm fs! - qm qr \-Vour 0 Soo* + du Vin * Ama V +V- \our _ 0 Tor. Vour - V + \\ =O ton q™ qs Vour -V- qr von +0 Ve Vout | * Grete E EDT) SCOTT CM Ch Vy ttt + : %1 For Voor} +1 + qm Tr ie x | a™ \tw =0 \ F Gra Yoo You Nour You 4 +4m2¥oa~ | Vor ( 4 qa%on) Bo! L Groen = ~ Ym Viw Vout, . - am%o) (4 mo) Ky arentfour Voe foi= feor Vin | + \gsi Vine Voss qn Otour OMn = Oto. . qm ONG Overall trans conductance = trong conductomce of ist Stage > WV ey SCOTT CM Ch> WV ey SCOTT CM Ch \psa =-V our = Voor -V + gna 82 Tor ~ Voor -V [Gna +b ] So Von Toor [grat + Tor = \our Vou 4 Yor You ~ gr fou Yoo + %, 4, vyqn z _ (1 * jm meq Tor % » =~ qm [Goma % ) oe == q" Ror % 0 = = ¥ ot qr 02 qm Tor 02> #1) apap aint Rop = ms ts Toy \ Tx near to %p Ron = gm Vo, Too qn q™ Rour = Rop II Row io - {" RoorSea tg Student’s Assignment Question-O1 ° Consider the common-source circuit with source bypass capacitor. The signal frequency is sufficiently large. The transistor parameter are Vpx = 0.8V, Kn = 1mA/V? and A = 0. The voltage gain is / S450 G = O-SmfA +5V Gm= 21K 2 Q{txos ~J2 ms ¥, 20kQ ll ]Sea tg Consider the NMOS common-gate circuit shown below. The parameter are 2m = 2 mS and rg = ©. What is the value of voltage gain Ay? GNnD GNo[¢. Vo - i \ Ay = 2 x oy & {" ® F504 J = 444 V : lok \ys= O-Vi ” Yo= ~fris (St) V.=~\ps Nloy = Gm (SM q A, q (su4)Sea tg Consider the common gate circuit shown below soxa SC sc y th = mf we ImA 4kQ 10kQ qn =2 Jka fp = 2mS 100kQ = ope? ls. * Ta 00 GND =} ghost ‘ GND Transistor parameters are Vx = 1 V,K, = 1mA/V?,A = 0 What is the small signal transconductance (in mA/V) = 2mS> SCOTT CM Ch Bok 4 = loosinwt ~ Vin JAN = b= Gras Yo= - Grays C40} = loo sinat UA x 40 ka \4 = O-28SF Stnwt VEXAM DOST Sea tg If input current i; = (100 sin wt)yA, then output v, is (a) (1.13 sin wt) V (0.283 sin wt) V (c) (1.13 cos wt) V (d) (0.283 cos wt) VEXAM DOST Sea tg Consider the source-follower circuit shown below. The values of parameter are 2m = 2 mS and To = = 100K0. >>4k ™ Vin + \gs Book 500kQ 1 4kQ Vo= qs (4 K) Nine \gs \lt gmx AK] What is teat gain Ay? Bye Qmx4k 2 = 0-888 + 2mxA4k 4EXAM DOST Sea tg What is the output resistance R,(in kQ)? gly = 4kud a = AKOS . 0-444 Ko AS> #1) A depletion NMOS transistor circuit is shown in figure. e (NGS 5-fpx-2 4° Tooox +0 + 9-9 Ve =-5+ i Rs Boe Kn [vys—Ve J fp. 5 [ 5-foRg +] s 200 kQ Transistor parameters are Vry = —2V, Ky = 5mA/V?,A = 0.01 V1 What is the voltage gain Ay = a 0-2 fp) = 494144 fy - 16°% tp qm= 21k f > toms P.-6.m5 5% p= 6 805 | Yor Yo = 2oKr ALyEXAM Your Exam Preparation Buddy \ Vin = gs +\o Vo = gm § Reg lo = duh 0 = Ym ‘in [+ {" Req eq= 1+ N2U20 = 4-229 > 0-4229k2 8-228Sea tg A depletion NMOS transistor circuit is shown in figure. +5V x Rour = Res ll y — m -(0-4228 Il 0-1) = 0-08424 ko Vs 200 ka Transistor parameters are Vpxy = —2V, Ky = 5mA/V?,A = 0.01 V+ Output impedance Rg is (a)20kQ (b)113kQ (c)1370 8 ¢f9190EXAM DOST Crack GATE Under the Guidance of er > ANKIT GOYAL SIR Two Times GATE RANK - 1