Unt-2

Tranghsk
BÞT
Moce
Nesfe pe TaRon priipls
tranobr dlevias
blàck digiam
Contn yyotk on d'rout utent
al krpaing ursent

Quadsac

Pookcon agahst vothge oyerAngel

tudyent
dPsot
(NOS ont so led tiyray
 INTRODucTION Conduch- flos gelrde
uYreot
Somi Conducay Condut elecdrlc CuTTeot
Can at as osulatos
ConduchrA.
nulaoy-doe not tonduct octaiey
PROPERTIES SEMICON DucTORS
¥ Tt ha
an empy conductPon band l
an alo&t ed
+ The eng gap ovalene band,
nninimum ley)
Compaed the hsuatotA.
* At lous (oR) Rmp, Sersi behave ad
Verg
an oswaby due to the los
ree elechon
number
Be condudion ban
Conduh Q demluonducozA nbuase
(eAfhy deeaie)
|empera hu e and po% eMes nega te kmperhoe
The NesRh a demlopducor le
be tuanJ02n to o4 m at YDo

emperatre
Bond are
Valane elhctrondovalent benda)
2M* Ubes seroianducotd ate found s all
eletaontc levu Auch ay tondstoik, dode
LEo'bulbl ruit boardA etc.
The It o tunable to many oppliiafor
inpu?hy
by addig Q Jmall amount % (olopo)
 RË&y -ho uYren
) Însula hy forbdder flous
hulohoy csndutoy
+ moreenerqy gap -Sma amount urYent
betweon onducPon bun Energy gp
1:1ey S
Valene and
Ocuupied by co ndudon
bard = elo - eg lerma nium, S?LP ton , la tbon ete
() conduchor tmdo
TYPES OF SEMIONDUTOR
Current Cariers. Seofondutoy
falls fRlled fat a TABOR
+No
Par enegy gap. Fondutor
enegy gap.
CotmD.
Lntinc
OLupled by Valene
cb) +Volene band elo tnA
n-type emfon Pnpe

* Dt PoMel highes,t en Ygy TNTRINSIC SE MIcON DOCTOR

maybe compitey o pure
Parfally fled
tond bas formand cooa Ýt no fmpurihy knoon
as ibtAle gemionduetor
Brles gap
movement boles bole urrent
8p Nalnca eluctrons - Floeton
VoAagy kod Combua-fon eloto hole= £etDn -
Conduc Frea electhole pa&

O>hol
Conducuey.
odCondueh obey ohms kus Workhg Inhioc Semiootuchoz.
aeg Coppey ALubnîum
 Hota Rvey chc
Norkg
Fleckic rald L
Elotc |(T) Phype SennieonduchY
Holes are
Hole
Cneqate temnal
move
E locto Mo Ve majorfhy Carites
(Po3vely terma Trivalent
bat key) wbattery) Imprthy &added
L Boron

Produe £letic unent aceptog atom

| Tetra Valent + Tnîvalent - Phype
wsren= Ee ton urrent +
Total Free eltop Semiondutor
hole Current A
tole!
ExTRNSIC SEMLoNDUcTOR

Tt hay impufhy (adde!) t#) n-type semconduuhz (6) Semileondutor

P- type
to ocxeale eletofal conducvy
* The pzoLeu addig
imput koown as dopg OPN JUNCTiON DioDE
i) o-ype SEMIONDUCTOR Tntmdufop akm
alAntmony)
B Pentavolert impuny * PN funten famed by
added htype semi odueton P- type semonluctoz
known u
+ Fletongare maforiy casster Yohng
matea
ot Peptavalost atom u L olope on efthey ide q unPop
KnouOn a donar ahom. The contat Juzpate e callsd pG fundeg.
The purpoe n-yPe Hqh Etotenonuntratn
Proclue an abu nelane - Hqh hole conantratoo
fhee elhcton4 B HBe makePal P-type
 A
Flaben d t g y P.end nend
dpuwe- pypeet n-type Symbo
|ble

a' Lay olealed by ele tyons om t

Yunfoh
-bype and ole lom n-pe. CB)
layer & knouwn al epulfon" layer loy) PVo t

Bayox fotentai Duzug the movenm

pepluRon Jayer
chatge d.. Whon tße boles' move om
acaptor on
Phype toAtype, thaiged.
beionne ngaly T6 maka l) Barrier polental
de plution Yegio), Knouon a< baynier
pokental
(a) foruward Ba
*Barer poBenon
SfonVoo7V
CheTnarnfum Vo 03V Hols free
Jotoetons
# î t ç aoe knon ad tdcvoltage)
koe yoltaqe lor) iut o Noltage
Confon
* DC Vol tage+P-Tegion hole)
(repls
D-egten.
urrent flow
Lchargenoye frepotr eatn
rmove tow aYos tAe funor
 Delalon wA>Entrgy
Applad Vol ‘turent flos
(6) ReverAe Ba

JElackony
Reverelahirakoo

-Pxaion
* Ubder yeveYAe bad, electnn

attrate auay
cuy rom tae unon.
Deplatfon ealon CurTent
=No fla
=

* Snal leakage uTrent,

T (sahralfon urent lows
eyeYse blas.
Revoro
V,0)
a)
ott
Ty(p)
ere Averetv)
forulatd

u
Ralutao)
Larias
Katato
TiL onAubYThe woT

CombinatPon
ard "Vaabla tBe ero
ruûbr" brans torduc

ormed kandwihihq by elifox p-hype o

'p-eJeniconduchy betwan apais pa oy

Yesitae pak
the ’Wbena Byna o appled
trans@or, as ?t p there i a
los Teis tane &lde
Hene t &calld transo

BIT- Bipolas funon transitor.

 tamhal
BenitonouY he hkraton
peloler dependson mincafyCawia,
h
bets mayoy
here cale solat
eatly duped
Emfter() Boe ()

and olat Workng

tAplatoni corpst,
JakRs,mal1m come mafothy chage
teamira chasge Cattr.
Res rm tRa bae

ranslhr Pnp.
V
J132
FBa R&

DPO Vec
Eoiterz Colleuby

Bae. la) Struche

fa) Sruehxe TEN Pn P
Te

B2

(Teegte
sahaa
RB

t) Sgmbol
 Sasboba

1Ypes Sonniorduchy Maleealy

Seni cereduchy (eledyons n
ouley osbr)

Etrhsre ladd
fupet)
(Aivalent) (Perte Velant)
(3 elechon) selsctrons)
tree hole Pres eltns
Mc-elet

hole elatoy
valer Pentaelant
qtom.

One dapige
at Po a hio oloctlol
AODeCan convert
When ajoo ed then

Satti
>Then & olocto wt becone te
uroty Ca9ee'e 1Å and being kurreurde! by e
öfn be hort. So ît
Ye com b'ne othe ho les
 ’wheoves electro n dtses aoos
furPon, oser te
hole
ele cten dkues

Poomobtle ons. Ccales Ohe pos?Sve 2 ussert

negate
-Gurton.
>Recombna Bor tve

free chage Caotern hear i junctPon.

pletorr reon> (ontae tve e -Ve Pons Tempeiahe
Batsao
oussent

Can abet

Baex PolerSal pde MOSFET Acve davie

Slcon -o.2V Conto 0 elotros
CoB r 6 . 3 V . atve device
->due to knoo
Coet9ies Can able o B , JfET
jundiorn
fesve lovio Cannot
Eletron loe due to eloc ic (o) elet=
Casoer usrert) vseorso0eg: DYodo, Petc.
Mosfer ’ Depiton ype MosfE D-hannel
Erhanmen t P-chanoel
(maot Caonos cuTent) 120
n-channel
P-chanoa
 hennd
Dpeler tye

peos n

Ves Cman Ves

Chanel o obsent
usent-o
() Ves -o ()Nus 4ve Voc Ve

narru)

e
Ves=0 Vas
Tiveuhd Volage
>Vos not eat easler,
aehantamut
Vas Ve pealon Vollg ony
eVetaced &rhannel
Teduo
the
Veas enhan Lement tpe
(o) Vus onst above V a o s ’ buea
Vus Fener ora t atey
(i)Vas a +Ve VDc =+ Ve cay
D
deplatfon Togfon t touorads dra
tons
e eletons p-hom
NosfeT
wil mDve to n-thannel
rot feT duto Lonnechop
gole as pohie
 got tusned
uai Wrt
lakle
SPey bae
emtey-
FB rfon
puse) fon
uak
puse&
FVen hannel Satra
Prp
qak
(-ve Chan elprind
ausby
ON
emitier
P
be
can
fbfiakd ,nsnrn
chonnlk
induchon p-chamd
MofeT MCT C)
Anacta(
ve) Catfode
(-ve)Cak-
tusn
Tyrsfor
Contelled
Mos B
vie
de deve to
certroled
ker'tarlucoy
to dos Thowandy pt+
we Curebts
A
neus wt MosfET
and Bubsta
byet
a thyitoy rqeny
& Arod
It one PAt
open
RB
Metal
Wse h
Chanrh-chaalrnd
a and
oheT
A
pun Qar
 ConBnuo Pt
Adven
Cous() bil 3
chamel Very P-
take
conducon los hanel
DnegaBve
lousC2) over at
Moc MCT-CB
R turn.
otrhg Be
forstad Cfi) even goe
omplt to onpulse
&hortCkT
Conduh
loBeldp to
enigsed fa sahaia
uOrett h-
o channel
bwn Hon oN.
4f ang

(e) dv
() oves(6) Suddenpan o
cT (6lrkkon
) aqaírst paadv1
dt ’damag Be’
due oler
hon
oveTteme koppord sothig bs
()
to Volkag
chanymkfon
nBudden te
fastange prokton
’ UYut loadpokon harg(esuddetin
Seles Snubber
prokSon
iult
Short haac
dubr tuntert beakeg ’Vomir
voltgeCrult
Png ove (Voleg
lord
fuye depoduy
t +R)=-Lot (Rs
V0-ete) RetR) (
dt
+
+ dt
H
a asatCapatiog& RL
Atabl împove
AM
irut Soubte
sakog gentaled Resmaly byps R’
airs
to wesele tonnecded Yesito
& velZooVes
a
krSoa spe? may .ond proteeo tusert K3Ve
proteten Late
(rust
Sce avtoNs Snublor
ça¥r ustag bydee belon ts aeo dess
ed bperjuddrhy when tt
tefucanu toduo Volase fagts Proon Pikrtor
 -t (RtR)\
L
ta king df dt
Le

ott

d
dt Le
Qt t-0

tt (to
Vse ) )
(a) Protecfon against dPect Dvertustenti
Ca) rgligene
Lompereti
dv () Shost (T motor wdg
dt
Cpat &, nct honig of
(e)
load

Prot
\S-dampig
R L?

Rdo
ct
tLdi-02)
de2
 The

aller aay
-’ TH (oM)

2
clama e bottyy.
Avod Aadbing ba.ck a
propor henal
anad to Ro load tuooant to Belo
gale corcut. ang ursest.
fAAlenn he avetage load

pek. (ro fuse &

povdad)

Rrne urent las

ae
arc.

beoms
2e9o
SFAtton Contzol led Rdper(scR)
P

A
NP

> An ScR has hoo hta t

ePßex Pt tonduct haavtly (tusn oN)
A- Anoda (on)t doe not Londuct (tan
SLR act as a suith cEF)
k- atfoda
Thrtoe, to
’ hat Contn the cunest tugn on ke SCR,
nm an ock to latßode. So,
Conto dve () hatopen
laual
&CR > Selon Contnlled
Nhy cuient &very Amall
beta use aakae (P) Cavig Small cusent tu the
&, SPAPuen tompared to gmah? um gat tezmoal

the Concton whPh abould be

vo!,so
a amall a possible Rat e ument
Value called teie holdiog Cunrat (T4

tsat he rult Cuget Tedues belo us

 Ahode
P
Ni
Reverse Bo
tuate N
lcatRode Jo = F.B.

’ în lorwatd blokEng mode,

>Nhen anoe
>Nhen ve) wA urient plos rom anodeto
Catfodea bloauddue to to &o
RB
?în JowoTd tondutPon mode,
Tapet to catiode, ScR & o when teße urent eud eo voltug
Teyerse blas.. breakdotw) tAen ScR stazt cobduca

Modes æ SCR gata urent as we ocYease

urrent SCR trlgges eaall
the
((9 forward
forward blokg mocle Ban the breakdouon yoltge
(D forwatd Condudonop mode
mole
() Reverke blocking mode foruard PRbrea
conducking
fofward Ba Mode koony
fun dus
t o ho

Vaso FBor

JP Roverke break

Hockbg blodktng
mode. mode
4rgge4
The Ptype i more po ve
 M1 |MI MT
(4ve)
SCe
cntnl de pouey FB FB RB
(D Sped R8 FB
() OvexValag
I4)Sce-pulse ditetlon
k fb

TRA |C
uTTent flous f-NfNg
Trfodke AC Suoteh
LNTRODiCTioN
çyeyos
floer

tRa dsec TRLAC & ho back to

taee
back conneded scR oith Nfbreakdoun
tTmbal.
TRIAC uivalant
CKI
M oT2 o4at (3

Applalions
Mod g operaen lanp
(MTe àlAve) e) w.t MT
8 (- wYt
Yt M MT1,hl4ye) )7t Mo,
 Symbol
mT2 D2

TRIalorAgwtc.6 Döde
DIAC
i
tve P2n2
fn Aternalg
RB Ave)

(tve) P |(-ve)
Conert
RE
 Applicalon
(4) (2)
Heat n
Phasé Lamp
tontn Contnl.
dinmer
divRe
tafac s
rutt crutt
d
ol
 * QUADRAC:

Dac

"Qua dxas ate specfal type op hyu&tan cohfch tombYnes a

Dlac a To?ac in a single Package.
tho

Quadyas
enpekotune Miadatatön contol pleation.
(ier):
neo devite n the fleld of semi- (onductax
" 24 & a
ontyclled device.

mcT.
and he othet ujed to ton

dev?e.
dop
fabti?ated on a sngla chip.
" bousands
mcT can be
be
 Ancde cii) Gate’+ye pube
Phorne
R-thamel

P Tct applfed hen cussent 2

" gate voltage
fluefng pom ancde to cathode S+8, -3,
nt ubstrate
Catiade Ho (aHrt flow . Gaate vol4age Z appled.
Andebtt
Y
p-channel & - charrnel art as tne capaicss as
anccle
3Ternfnalt cathcde Su Pplying -ve pube to p- dnanmel t +e pule
to n-chatinel.

wepencitait l p ’ collecta
A Cond to)
f8 RB soitch on)

Gurte
1-chamnel p-chame l i

(ondftion ;
() Gate ’-Ve pube
hen ON hen if gate vo lHage i
uppying to 4 then due to Base voltage buing the
4 wor touch R8 undon oil) bg pass the lago
Cutent ondurfon uo1) be pos7ble.
 Diection
(eent
" devfce
Actñe " "
3 DHain not Pooe Jocka
above
Soeteto°on meta JtYuctuye inputRgh conbkolled
NosfoueHET inpedance blage
devfee low
fnput thexE ent
+Ue, substate n
8JT
Afahl
nt+ny
n doped Body P tetent n
derenden+
nt depende:} &
ouHCe PooeH
tfghty
deped Lonjnt +
a
-Ve NiofET. oncoent
on
Gate
Junction bae
Tuntion
nt channel*h ontBolled
-RB custNent.
Metal lempetalue
lenmpexalue
& Gtate devYce
Ybp Hence
*P-chànnel
Sowre
alaay ohfh the the
nt nt
cwteolNlectoy
R8 &
t
itvitg
VHitay
Vayiable
Reiito. vauisto avofdthe To A ij a
OveY i) OveyPROTECTION CuKeYnt ontyve
lAcfi Hegon
Bvstection abxuptly
Fn0MeJE
ofth wflegfon
Rn
f High
t volHage
1, VolHage clt
Dscafn
d2
vent
et OF
Protectiönagainst sowece -
, Brotection Prctection THYRISTO Rntease
& voHage
e-ver Volkage voltoge)
Lotp
:- R
to sstger: |
t PRoTEC
"having
Bseakdaon
Knotecase. Aalanhe
Aflex
cwoent.
cuentIhenT. Vexg
min Ohem
TIoN R8,
o Vos=0,
to of The
etiu.
chaxact
scR: Nocooe
t (usHerH
it solkoy(ip
ill
a