JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Transistors

%&' TRANSISTOR (NPN)

(  

z NPN silicon epitaxial planar transistor for switching and
Amplifier applications
z As complementary type, the PNP transistor 2N3906 is
Recommended 1. EMITTER

z This transistor is also available in the SOT-23 case with

2. BASE
the type designation MMBT3904
3. COLLECTOR

): Equivalent Circuit

1 'HYLFHFRGH
2N 
3904 6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH
z *** LIQRQHWKHQRUPDOGHYLFH
;;; &RGH

  ()

# !34"# 87" 87 )".$0 8 9!2

1 72 %XON 1000pcs/Bag

17$ 72 7DSH  2000pcs/Box



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234$ #3""# 5!" 

5 6 Collector-Base Voltage 60 V
5  Collector-Emitter Voltage 40 V
5 6 Emitter-Base Voltage 6 V
 Collector Current -Continuous 0.2 A
 Collector Power Dissipation 0.625 W
TJ,7 Operation Junction and Storage Temperature Range -55-150 

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Ta =25  unless otherwise specified

#3""# 234$ " $0$ ) 2 )? 

$"$#4" 4#"80$/ @$7" V(BR)CBO IC=10mA, IE=0 60 V
$"$#"3"# 4#"80$/ @$7" =
V(BR)CEO IC= 1mA , IB 0 40 V
3"#4" 4#"80$/ @$7" V(BR)EBO IE= 10mA, IC=0 6 V
$"$# !$AA !##" =
ICBO VCB=60V, IE 0 0.1 uA
$"$# !$AA !##" ICEX =
VCE=30V, VEB(off) 3V 0.05 uA
3"# !$AA !##" =
IEBO VEB= 5V, IC 0 0.1 uA
hFE1 VCE= 1V, IC=10mA 100 400
 !##" 7 hFE2 VCE=1V, IC=50mA 60
hFE3 VCE= 1V, IC=100mA 30
$"$#"3"# !#$ @$7" VCE(sat) IC=50mA, IB=5mA 0.3 V
6""3"# !#$ @$7" VBE(sat) IC=50mA, IB=5mA 0.95 V

#$ A#"B!"2 fT VCE=20V,IC=10mA,f

= 100MHz 300 MHZ

"2 3" td VCC=3V,VBE=0.5V, 35 ns

" 3" tr IC=10mA,IB1=1mA 35 ns
$#7" 3" ts VCC=3V, IC=10mA 200 ns
( 3" tf IB1=IB2=1mA 50 ns
(  ( .( D

8 O Y G
 7" 100-200 200-300 300-400

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 2  .#"#

 .#"# .( FF 
100 1000
COMMON EMITTER COMMON EMITTER
Ta=25ć VCE=1V
500uA
450uA
(mA)

80 Ta=100ć
400uA 300

hFE
IC

350uA

DC CURRENT GAIN
COLLECTOR CURRENT

60 300uA Ta=25ć

250uA 100

40 200uA

150uA
30
20
100uA

IB=50uA
0 10
0 2 4 6 8 10 1 3 10 30 100 200

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)

5 
FF  56 
FF 
1000 3000
COLLECTOR-EMITTER SATURATION

BASE-EMITTER SATURATION
300

VOLTAGE VBEsat (mV)

VOLTAGE VCEsat (mV)

1000
Ta=25ć

Ta=100ć
100
Ta=100ć

Ta=25ć

30

ȕ=10 ȕ=10
10 100
1 3 10 30 100 200 1 3 10 30 100 200

COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT IC (mA)

 FF 56 $4
G 4
FF 5 6G 5 6
200 10
VCE=5V f=1MHz
100 Cib IE=0/IC=0
30 Ta=25ć
(mA)

Ta=100ć
(pF)
IC

Cob
10
COLLCETOR CURRENT

1
CAPACITANCE

Ta=25ć
1

0.3

0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20

BASE-EMI7TER VOLTAGE VBE (V) REVERSE BIAS VOLTAGE V (V)

A FF   FF 
1000 700
COMMON
EMITTER
VCE=20V 600
(MHz)

COLLECTOR POWER DISSIPATION

Ta=25ć
300
500
fT
TRANSITION FREQUENCY

400
Pc (mW)

100

300

200

100

10 0
2 5 10 30 70 0 25 50 75 100 125 150

COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (ć )

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  87" !" 3"$

3"$  )3""# 3"$  ."

234$
) )? ) )?
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4. 4.700
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
Κ 1.600 0.063
h 0.000 0.380 0.000 0.015

 !77""0 0 2$!

NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.

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 7DSHDQG5HHO

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