Download as pdf or txt
Download as pdf or txt
You are on page 1of 54

Simulation and Modeling

Methodologies Technologies and


Applications 8th International
Conference SIMULTECH 2018 Porto
Portugal July 29 31 2018 Revised
Selected Papers Mohammad S. Obaidat
Visit to download the full and correct content document:
https://textbookfull.com/product/simulation-and-modeling-methodologies-technologies
-and-applications-8th-international-conference-simultech-2018-porto-portugal-july-29-
31-2018-revised-selected-papers-mohammad-s-obaidat/
More products digital (pdf, epub, mobi) instant
download maybe you interests ...

Simulation and Modeling Methodologies Technologies and


Applications International Conference SIMULTECH 2013
Reykjavík Iceland July 29 31 2013 Revised Selected
Papers 1st Edition Mohammad S. Obaidat
https://textbookfull.com/product/simulation-and-modeling-
methodologies-technologies-and-applications-international-
conference-simultech-2013-reykjavik-iceland-
july-29-31-2013-revised-selected-papers-1st-edition-mohammad-s-
obaidat/
Simulation and Modeling Methodologies, Technologies and
Applications: 9th International Conference, SIMULTECH
2019 Prague, Czech Republic, July 29-31, 2019, Revised
Selected Papers Mohammad S. Obaidat
https://textbookfull.com/product/simulation-and-modeling-
methodologies-technologies-and-applications-9th-international-
conference-simultech-2019-prague-czech-republic-
july-29-31-2019-revised-selected-papers-mohammad-s-obaidat/

Simulation and Modeling Methodologies, Technologies and


Applications: 7th International Conference, SIMULTECH
2017 Madrid, Spain, July 26–28, 2017 Revised Selected
Papers Mohammad S. Obaidat
https://textbookfull.com/product/simulation-and-modeling-
methodologies-technologies-and-applications-7th-international-
conference-simultech-2017-madrid-spain-july-26-28-2017-revised-
selected-papers-mohammad-s-obaidat/

E-Business and Telecommunications: 15th International


Joint Conference, ICETE 2018, Porto, Portugal, July
26–28, 2018, Revised Selected Papers Mohammad S.
Obaidat
https://textbookfull.com/product/e-business-and-
telecommunications-15th-international-joint-conference-
icete-2018-porto-portugal-july-26-28-2018-revised-selected-
E Business and Telecommunications 13th International
Joint Conference ICETE 2016 Lisbon Portugal July 26 28
2016 Revised Selected Papers 1st Edition Mohammad S.
Obaidat (Eds.)
https://textbookfull.com/product/e-business-and-
telecommunications-13th-international-joint-conference-
icete-2016-lisbon-portugal-july-26-28-2016-revised-selected-
papers-1st-edition-mohammad-s-obaidat-eds/

E Business and Telecommunications 16th International


Conference ICETE 2019 Prague Czech Republic July 26 28
2019 Revised Selected Papers Mohammad S. Obaidat

https://textbookfull.com/product/e-business-and-
telecommunications-16th-international-conference-
icete-2019-prague-czech-republic-july-26-28-2019-revised-
selected-papers-mohammad-s-obaidat/

Sensor Networks 6th International Conference SENSORNETS


2017 Porto Portugal February 19 21 2017 and 7th
International Conference SENSORNETS 2018 Funchal
Madeira Portugal January 22 24 2018 Revised Selected
Papers César Benavente-Peces
https://textbookfull.com/product/sensor-networks-6th-
international-conference-sensornets-2017-porto-portugal-
february-19-21-2017-and-7th-international-conference-
sensornets-2018-funchal-madeira-portugal-
january-22-24-2018-revised-sel/
Software Technologies Applications and Foundations STAF
2018 Collocated Workshops Toulouse France June 25 29
2018 Revised Selected Papers Manuel Mazzara

https://textbookfull.com/product/software-technologies-
applications-and-foundations-staf-2018-collocated-workshops-
toulouse-france-june-25-29-2018-revised-selected-papers-manuel-
mazzara/

Intelligent Technologies and Applications First


International Conference INTAP 2018 Bahawalpur Pakistan
October 23 25 2018 Revised Selected Papers Imran Sarwar
Bajwa
https://textbookfull.com/product/intelligent-technologies-and-
applications-first-international-conference-
intap-2018-bahawalpur-pakistan-october-23-25-2018-revised-
Advances in Intelligent Systems and Computing 947

Mohammad S. Obaidat
Tuncer Ören
Floriano De Rango Editors

Simulation
and Modeling
Methodologies,
Technologies and
Applications
8th International Conference,
SIMULTECH 2018, Porto, Portugal, July
29–31, 2018, Revised Selected Papers
Advances in Intelligent Systems and Computing

Volume 947

Series Editor
Janusz Kacprzyk, Systems Research Institute, Polish Academy of Sciences,
Warsaw, Poland

Advisory Editors
Nikhil R. Pal, Indian Statistical Institute, Kolkata, India
Rafael Bello Perez, Faculty of Mathematics, Physics and Computing,
Universidad Central de Las Villas, Santa Clara, Cuba
Emilio S. Corchado, University of Salamanca, Salamanca, Spain
Hani Hagras, School of Computer Science and Electronic Engineering,
University of Essex, Colchester, UK
László T. Kóczy, Department of Automation, Széchenyi István University,
Gyor, Hungary
Vladik Kreinovich, Department of Computer Science, University of Texas
at El Paso, El Paso, TX, USA
Chin-Teng Lin, Department of Electrical Engineering, National Chiao
Tung University, Hsinchu, Taiwan
Jie Lu, Faculty of Engineering and Information Technology,
University of Technology Sydney, Sydney, NSW, Australia
Patricia Melin, Graduate Program of Computer Science, Tijuana Institute
of Technology, Tijuana, Mexico
Nadia Nedjah, Department of Electronics Engineering, University of Rio de Janeiro,
Rio de Janeiro, Brazil
Ngoc Thanh Nguyen , Faculty of Computer Science and Management,
Wrocław University of Technology, Wrocław, Poland
Jun Wang, Department of Mechanical and Automation Engineering,
The Chinese University of Hong Kong, Shatin, Hong Kong
The series “Advances in Intelligent Systems and Computing” contains publications
on theory, applications, and design methods of Intelligent Systems and Intelligent
Computing. Virtually all disciplines such as engineering, natural sciences, computer
and information science, ICT, economics, business, e-commerce, environment,
healthcare, life science are covered. The list of topics spans all the areas of modern
intelligent systems and computing such as: computational intelligence, soft comput-
ing including neural networks, fuzzy systems, evolutionary computing and the fusion
of these paradigms, social intelligence, ambient intelligence, computational neuro-
science, artificial life, virtual worlds and society, cognitive science and systems,
Perception and Vision, DNA and immune based systems, self-organizing and
adaptive systems, e-Learning and teaching, human-centered and human-centric
computing, recommender systems, intelligent control, robotics and mechatronics
including human-machine teaming, knowledge-based paradigms, learning para-
digms, machine ethics, intelligent data analysis, knowledge management, intelligent
agents, intelligent decision making and support, intelligent network security, trust
management, interactive entertainment, Web intelligence and multimedia.
The publications within “Advances in Intelligent Systems and Computing” are
primarily proceedings of important conferences, symposia and congresses. They
cover significant recent developments in the field, both of a foundational and
applicable character. An important characteristic feature of the series is the short
publication time and world-wide distribution. This permits a rapid and broad
dissemination of research results.
** Indexing: The books of this series are submitted to ISI Proceedings,
EI-Compendex, DBLP, SCOPUS, Google Scholar and Springerlink **

More information about this series at http://www.springer.com/series/11156


Mohammad S. Obaidat Tuncer Ören
• •

Floriano De Rango
Editors

Simulation and Modeling


Methodologies, Technologies
and Applications
8th International Conference, SIMULTECH 2018,
Porto, Portugal, July 29–31, 2018,
Revised Selected Papers

123
Editors
Mohammad S. Obaidat Tuncer Ören
King Abdullah II School of Information School of Electrical Engineering
Technology and Computer Science
University of Jordan University of Ottawa
Amman, Jordan Ottawa, ON, Canada
Nazarbayev University
Astana, Kazakhstan

Floriano De Rango
University of Calabria
Rende, Cosenza, Italy

ISSN 2194-5357 ISSN 2194-5365 (electronic)


Advances in Intelligent Systems and Computing
ISBN 978-3-030-35943-0 ISBN 978-3-030-35944-7 (eBook)
https://doi.org/10.1007/978-3-030-35944-7
© Springer Nature Switzerland AG 2020
This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part
of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations,
recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission
or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar
methodology now known or hereafter developed.
The use of general descriptive names, registered names, trademarks, service marks, etc. in this
publication does not imply, even in the absence of a specific statement, that such names are exempt from
the relevant protective laws and regulations and therefore free for general use.
The publisher, the authors and the editors are safe to assume that the advice and information in this
book are believed to be true and accurate at the date of publication. Neither the publisher nor the
authors or the editors give a warranty, expressed or implied, with respect to the material contained
herein or for any errors or omissions that may have been made. The publisher remains neutral with regard
to jurisdictional claims in published maps and institutional affiliations.

This Springer imprint is published by the registered company Springer Nature Switzerland AG
The registered company address is: Gewerbestrasse 11, 6330 Cham, Switzerland
Preface

The present book includes extended and revised versions of a set of selected papers
from the 8th International Conference on Simulation and Modeling Methodologies,
Technologies and Applications (SIMULTECH 2018), held in Porto, Portugal, in the
period July 29–31, 2018.
SIMULTECH 2018 received 83 paper submissions from 29 countries, of which
11% were included in this book. The papers were selected by the event chairs, and
their selection is based on a number of criteria that includes the reviews and
suggested comments provided by the program committee members, the session
chairs’ assessments and also the program chairs’ global view of all papers included
in the technical program. The authors of selected papers were then invited to submit
a revised and extended version of their papers having at least 30% new material.
The purpose of the 8th International Conference on Simulation and Modeling
Methodologies, Technologies and Applications (SIMULTECH 2018) was to bring
together researchers, engineers, applied mathematicians and practitioners interested
in the advances and applications in the field of system simulation. Four
simultaneous tracks were held, covering on one side domain-independent
methodologies and technologies and on the other side practical work developed
in specific application areas. The specific topics listed under each of these tracks
highlight the interest of this conference in aspects related to computing, including
conceptual modeling, agent-based modeling and simulation, interoperability,
ontologies, knowledge-based decision support, Petri nets, business process mod-
eling and simulation, among others.
The papers selected to be included in this book contribute to the understanding
of relevant trends of current research on simulation tools and platforms, formal
methods, as well as complex system modeling and simulation. The readers can find
contributions of simulation in business process analysis and risk management,
Internet of things, advanced material science and fuel cell design. Formal method
contributions include visual password systems, co-simulation of complex
subsystems, heating system application of feedback linearization for MTI systems
in a tensor framework and iterative construction of complete Lyapunov functions.

v
vi Preface

We would like to thank all the authors for their contributions as well as to the
reviewers who have helped ensuring the quality of this publication. We also thank
the staff of INTICCC and Springer for their good efforts and cooperation.

July 2018 Mohammad S. Obaidat


Tuncer Ören
Floriano De Rango
Organization

Conference Chair
Mohammad S. Obaidat University of Jordan, Jordan, and Nazarbayev
University, Kazakhstan

Program Chairs
Tuncer Ören (Honorary) University of Ottawa, Canada
Floriano De Rango University of Calabria, Italy

Program Committee
Nael Abu-Ghazaleh University of California, Riverside, USA
Lyuba Alboul Sheffield Hallam University, UK
Mikulas Alexik University of Zilina, Slovak Republic
Carlos Argáez University of Iceland, Iceland
Gianfranco Balbo University of Torino, Italy
Isaac Barjis City University of New York, USA
Martin Benedikt Technische Universität Graz, Austria
Mohamed Bettaz Philadelphia University, Jordan
Louis Birta University of Ottawa, Canada
Wolfgang Borutzky Bonn-Rhein-Sieg University of Applied
Sciences, Germany
Christos Bouras University of Patras and CTI&P Diophantus,
Greece
António Brito INESC TEC, Faculdade de Engenharia,
Universidade do Porto, Portugal
Jesus Carretero Computer Architecture Group, University
Carlos III of Madrid, Spain
Francesco Casella Politecnico di Milano, Italy
Rodrigo Castro University of Buenos Aires, Argentina

vii
viii Organization

Srinivas Chakravarthy Kettering University, USA


Franco Cicirelli Università della Calabria, Italy
Tanja Clees Fraunhofer Institute for Algorithms and Scientific
Computing (SCAI), Germany
Flavio Correa da Silva University of Sao Paulo, Brazil
Andrea D’Ambrogio Università di Roma “Tor Vergata”, Italy
Guyh Dituba Ngoma Université du Québec en Abitibi-Témiscamingue,
Canada
Karim Djemame University of Leeds, UK
Atakan Dogan Anadolu University, Turkey
Julie Dugdale Laboratoire d’Informatique de Grenoble, France
Dirk Eisenbiegler University of Furtwangen, Germany
Sabeur Elkosantini University of Monastir, Tunisia
Georg Engel AEE - Institute for Sustainable Technologies,
Austria
Zuhal Erden Atılım University, Turkey
Denis Filatov Institute of Physics of the Earth, Russian
Academy of Sciences, Russian Federation
Jason Friedman Tel Aviv University, Israel
Marco Furini Università di Modena e Reggio Emilia, Italy
José Manuel Galán Universidad de Burgos, Spain
Petia Georgieva University of Aveiro, Portugal
Charlotte Gerritsen Vrije Universiteit Amsterdam, the Netherlands
John Goulermas University of Liverpool, UK
Alexandra Grancharova University of Chemical Technology
and Metallurgy, Bulgaria
Francisco Grimaldo Universitat de València, Spain
Mykola Gusti International Institute for Applied Systems
Analysis, Austria
Maamar Hamri Laboratoire d’Informatique et Systèmes, France
Cathal Heavey University of Limerick, Ireland
Monika Heiner Brandenburg University of Technology Cottbus,
Germany
Tsan-Sheng Hsu Institute of Information Science, Academia
Sinica, Taiwan
Xiaolin Hu Georgia State University, USA
Eric Innocenti IUT DE CORSE - University of Corsica, France
Nobuaki Ishii Kanagawa University, Japan
Mhamed Itmi INSA Rouen, France
Syed Waqar ul Qounain University of the Punjab, Pakistan
Jaffry
Emilio Jiménez Macías Universidad de La Rioja, Spain
Nina Kargapolova Institute of Computational Mathematics and
Mathematical Geophysics, Russian Federation
Peter Kemper College of William and Mary, USA
Organization ix

Juš Kocijan Jozef Stefan Institute, Slovenia


Petia Koprinkova-Hristova IICT - Bulgarian Academy of Sciences, Bulgaria
Vladik Kreinovich University of Texas at El Paso, USA
Claudia Krull Otto von Guericke University Magdeburg,
Germany
Jean Le Fur IRD (Inst. Res. Development), France
Willem le Roux CSIR, South Africa
Pierre L’Ecuyer Universite de Montreal, Canada
Mike Lees University of Amsterdam, the Netherlands
Alberto Leva Politecnico di Milano, Italy
Richard Lipka University of West Bohemia, Czech Republic
Antonio Lopes University of Porto, Portugal
Maria Celia Lopes COPPE-UFRJ, Brazil
José Machado Institute of Engineering, Polytechnic of Porto,
Portugal
Maciej Malawski AGH University of Science and Technology,
Poland
Andrea Marin University of Venice, Italy
Carla Martin-Villalba UNED, Spain
Moreno Marzolla University of Bologna, Italy
Radek Matušu Tomas Bata University in Zlin, Czech Republic
Roger McHaney Kansas State University, USA
Nuno Melão Instituto Politécnico de Viseu, Escola Superior de
Tecnologia e Gestão de Viseu, Portugal
Adel Mhamdi RWTH Aachen University, Germany
Bozena Mielczarek Wroclaw University of Science Technology,
Poland
Vikram Mittal United States Military Academy, USA
Cristina Montañola Sales Universitat Politècnica de Catalunya, Spain
Roberto Montemanni IDSIA - Dalle Molle Institute for Artificial
Intelligence (USI-SUPSI), Switzerland
Jairo Montoya-Torres Universidad de La Sabana, Colombia
Bertie Müller Swansea University, UK
Ivan Mura Universidad de los Andes, Colombia
Navonil Mustafee University of Exeter, UK
Nazmun Nahar University of Jyvaskyla, Finland, and University
of Tartu, Estonia
Angela Nebot Universitat Politècnica de Catalunya, Spain
Bao Nguyen Defence R&D Canada and University of Ottawa,
Canada
Lialia Nikitina Fraunhofer Institute for Algorithms and Scientific
Computing (SCAI), Germany
James Nutaro Oak Ridge National Laboratory, USA
Mohammad Obaidat University of Jordan, Jordan, and Nazarbayev
University, Kazakhstan
x Organization

Sorin Olaru CentraleSupélec, France


Paulo Oliveira Universidade de Tras-os-Montes e Alto Douro,
Portugal
Feng Pan Liaoning Normal University, China
Victor Parque Waseda University and Egypt-Japan University
of Science and Technology (E-JUST), Japan
George Pavlidis “Athena” Research Centre, Greece
Alessandro Pellegrini Sapienza University of Rome, Italy
L. Felipe Perrone Bucknell University, USA
Alexandre Petrenko Centre de Recherche Informatique de Montreal,
Canada
Alexandr Petukhov Lobachevsky State University of Nizhni
Novgorod, Russian Federation
Régis Plateaux SUPMECA, France
Tomas Potuzak University of West Bohemia, Czech Republic
Jacinto Quintero Universidad de Los Andes, Venezuela
Mpho Raborife University of Johannesburg, South Africa
Urvashi Rathod Symbiosis Centre for Information Technology
(SCIT), India
Manuel Resinas Universidad de Sevilla, Spain
Jerzy Respondek Silesian University of Technology, Poland
M. Riazi Kuwait University, Kuwait
José Risco-Martín Universidad Complutense de Madrid, Spain
Oliver Rose Universität der Bundeswehr München
(University of the Federal Armed Forces
Munich), Germany
Rosaldo Rossetti Laboratório de Inteligência Artificial e Ciência de
Computadores, LIACC/FEUP, Portugal
Jaroslav Rozman Brno University of Technology, Czech Republic
Katarzyna Rycerz Institute of Computer Science, AGH, Krakow,
Poland
Jordi Sabater-Mir IIIA-CSIC, Spain
Paulo Salvador Instituto de Telecomunicações, DETI, University
of Aveiro, Portugal
Antonella Santone University of Molise, Italy
Jean-François Santucci SPE UMR CNRS 6134 - University of Corsica,
France
Jefrey Smith Auburn University, USA
Xiao Song Beihang University, China
Yuri Sotskov United Institute of Informatics Problems of the
National Academy of Belarus, UIIP, Minsk,
Belarus
James Spall Johns Hopkins University, USA
Giovanni Stea University of Pisa, Italy
Mu-Chun Su National Central University, Taiwan
Organization xi

Nary Subramanian The University of Texas at Tyler, USA


Peter Summons University of Newcastle, Australia
Antuela Tako Loughborough University, UK
Halina Tarasiuk Warsaw University of Technology, Poland
Constantinos Theodoropoulos The University of Manchester, UK
Mamadou Traoré University of Bordeaux, France
Klaus Troitzsch University of Koblenz-Landau, Koblenz Campus,
Germany
Zhiying Tu Harbin Institute of Technology, China
Kay Tucci Universidad de los Andes, Venezuela
Adelinde Uhrmacher University of Rostock, Germany
Alfonso Urquia Universidad Nacional de Educación a Distancia,
Spain
Durk-Jouke van der Zee University of Groningen, the Netherlands
Svetlana Bulgarian Modeling and Simulation Association
Vasileva-Boyadzhieva (BULSIM), Bulgaria
Vladimír Veselý Faculty of Information Technology, Brno
University of Technology, Czech Republic
Maria Viamonte Instituto Superior de Engenharia do Porto,
Portugal
Manuel Villen-Altamirano Universidad de Malaga, Spain
Friederike Wall Alpen-Adria-Universität Klagenfurt, Austria
Frank Werner Otto-von-Guericke-Universität Magdeburg,
Germany
Philip Wilsey Univ. of Cincinnati, USA
Kuan Yew Wong Universiti Teknologi Malaysia, Malaysia
Hui Xiao Southwestern University of Finance
and Economics, China
Yiping Yao National University of Defense Technology,
China
Gregory Zacharewicz IMT Mines Ales, France
František Zboril Faculty of Information Technology,
Czech Republic

Additional Reviewers
Gökhan Cinar Eskisehir Osmangazi University, Turkey
Tansu Filik Anadolu University, Turkey
Celal Kandemir Eskisehir Osmangazi Üniversitesi, Turkey
Francesco Mercaldo National Research Council of Italy (CNR), Italy
Ezequiel Pecker-Marcosig FIUBA, ICC, CONICET, Argentina
Lucio Santi Universidad de Buenos Aires, Argentina
Long Wang Johns Hopkins University, USA
xii Organization

Invited Speakers
Juan M. Durán University of Stuttgart, Germany
Janusz Kacprzyk Systems Research Institute, Polish Academy
of Sciences, Poland
Gabriel Wainer Carleton University, Canada
Contents

Atomistic Modelling and Simulation of Transmission Electron


Microscopy Images: Application to Intrinsic Defects of Graphene . . . . . 1
Cyril Guedj, Léonard Jaillet, François Rousse, and Stéphane Redon
Using Simulation in Business Process Analysis and Risk
Management: The Blood Bank Case Study . . . . . . . . . . . . . . . . . . . . . . 20
Ilaria Angela Amantea, Antonio Di Leva, and Emilio Sulis
An SDN/NFV Based Approach for Mobility Management
in 5G Networks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
N. Omheni, F. Zarai, B. Sadoun, and M. S. Obaidat
Dockemu: An IoT Simulation Framework Based on Linux
Containers and the ns-3 Network Simulator — Application
to CoAP IoT Scenarios . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Antón Román Portabales and Martín López Nores
Iterative Construction of Complete Lyapunov Functions: Analysis
of Algorithm Efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Carlos Argáez, Peter Giesl, and Sigurdur Hafstein
A Pre-step Stabilization Method for Non-iterative Co-Simulation
and Effects of Interface-Jacobians Identification . . . . . . . . . . . . . . . . . . 101
Simon Genser and Martin Benedikt
A Heating Systems Application of Feedback Linearization for MTI
Systems in a Tensor Framework . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Kai Kruppa and Gerwald Lichtenberg
Syntactic Generation of Similar Pictures . . . . . . . . . . . . . . . . . . . . . . . . 153
Nuru Jingili, Sigrid Ewert, and Ian Sanders

xiii
xiv Contents

Mathematical Modeling of Alkaline Methanol Oxidation for Design


of Efficient Fuel Cells . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Tanja Clees, Igor Nikitin, Lialia Nikitina, Sabine Pott, Ulrike Krewer,
and Theresa Haisch

Author Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197


Atomistic Modelling and Simulation
of Transmission Electron Microscopy Images:
Application to Intrinsic Defects of Graphene

Cyril Guedj1(&), Léonard Jaillet2, François Rousse2,


and Stéphane Redon3
1
Univ. Grenoble Alpes, CEA, LETI, 38000 Grenoble, France
cguedj@cea.fr
2
Univ. Grenoble Alpes, Inria, CNRS,
Grenoble INP, LJK, 38000 Grenoble, France
3
OneAngstrom, Grenoble, France
stephane.redon@oneangstrom.com
https://www.oneangstrom.com,
https://www.minatec.org/fr/,
http://www.leti-cea.fr/cea-tech/leti,
https://www.samson-connect.net

Abstract. The characterization of advanced materials and devices in the


nanometer range requires complex tools to understand the precise links between
structure and properties. This paper demonstrates that the modelling of
graphene-based defects can be obtained efficiently for various atomic arrange-
ments using the Brenner module of the SAMSON software platform. The sig-
natures of all kinds of defects are computed in terms of energy and simulated
scanning transmission electron microscopy images. The results are in good
agreement with the majority of the available theoretical and experimental data.
This original methodology is an excellent compromise between the speed and
the precision required by the semiconductor industry and opens the possibility of
realistic in-silico research conjugated to the experimental nanocharacterization
of these promising materials. We propose a novel approach to compare the
agreement between experiment and simulation by using the projected radial
distribution function. The maximum projected Euclidian distance between the
model and the experiment is always better than 100 pm.

Keywords: Atomic modelling  Electron microscopy  STEM  Graphene 


Defects  Microstructure  Image simulation  Materials  Characterization 
Atomistic

1 Introduction

Digitals tools are more and more required to study, design and prototype nano-objects,
although the underlying physics is so complex that the quest for a universal tool is still
far from being over. With the increase of the computational power and the

Grenoble INP—Institute of Engineering Univ. Grenoble Alpes.

© Springer Nature Switzerland AG 2020


M. S. Obaidat et al. (Eds.): SIMULTECH 2018, AISC 947, pp. 1–19, 2020.
https://doi.org/10.1007/978-3-030-35944-7_1
2 C. Guedj et al.

improvement of the simulation methods, new possibilities are emerging. The increasing
pace of the semiconductor industry requires rapid and efficient simulation and mod-
elling strategies to analyse the results and improve the technological performances of
various nano-devices, sensors or actuators. In many systems, the optical or electronic
properties are driven by interfacial or by defect-engineered phenomena. In order to
understand the links between structure and properties, the nanocharacterization of
materials and devices must be advantageously combined with atomistic modelling
studies. The equilibrium positions of all atoms provide the necessary basis to simulate
the relevant physical properties, which are measured with increasing precision and
sensitivity. The combination of experiments conducted in parallel with simulations is
particularly relevant in the field of transmission electron microscopy (TEM), because
the correlation between the measured image and the actual arrangement of atoms is not
straightforward in general. Like most characterizations, the precise simulation of TEM
images is usually mandatory to interpret the experimental results at the atomic scale.
With developments in aberration-corrected transmission electron microscopy, it is now
possible to characterize vacancy defects in graphene [1]. This paper provides an
optimized methodology to model high resolution scanning transmission electron
microscopy (HRSTEM) experiments of graphene-based defects. For this, it uses
relaxed atomistic models obtained with the Brenner module of the Software for
Adaptative Modeling and Simulation Of Nanosystems (SAMSON) (www.samson-
connect.fr). The case of graphene-based defects is extremely interesting, because this is
a 2D material with outstanding mechanical [2–6], and electronic [7, 8] properties.
Hence, graphene belongs to a family of 2D materials which generates huge expecta-
tions in terms of possible applications [9–14]. The high mobility of graphene makes it
advantageous in the perspective of post-silicon electronics, but the defectivity remains
a recurrent critical issue. A wide variety of deviations from a perfect crystal might
occur during the processing of graphene, either due to the growth conditions or to
various sources of degradation, such as knock-on interactions, electron or ionic colli-
sions, plasma damage, chemical reactions, etc. The link between defectivity and
physical properties is critical for the device performance. Thus, defect engineering is
certainly the key of the possible industrial viability of this material. In this paper, we
study the defects in graphene in terms of structure and energy. Our methodology used
to build the systems and to simulate TEM images provides the necessary basis to
analyze graphene-based defects, in comparison with available data from the literature.

2 Methodology

2.1 State of the Art


Many methods exist to simulate hydrocarbon systems, such as molecular dynamics,
Monte Carlo and many other variants. Typically, these simulations come with ab-initio
quantum-chemistry computations. Therefore, computational studies of complex defects
are often limited by the maximum number of atoms that the first-principle methods can
handle. In all cases, these methods require an initial structural model consisting in the
description of all atoms in terms of position and chemical nature. In the case of pure
Atomistic Modelling and Simulation of Transmission Electron Microscopy Images 3

crystals, the 3D periodicity helps in calculating all the atom positions for large systems
(i.e. more than 50 000 atoms), but in case of localised asymmetrical defects, this task is
much more tedious or even completely unfeasible in the worst cases. Hence, a com-
putational tool that is fast enough to handle physically-relevant calculations with tens
of thousands atoms is highly desirable. The SAMSON platform and its Brenner module
appear to be ideally suited to this task, since they can handle complex models and
simulate very large systems in a timescale typically less than a day, which is com-
patible with the feedback delay required by most research teams in nanomaterial
characterization. This module appears as an interactive tool for performing predictive
modelling, particularly adapted to the very sustained pace of experimentalists.

2.2 The SAMSON Software Platform


SAMSON is a user-friendly software platform for computational nanoscience devel-
oped by the NANO-D group at Inria (https://www.samson-connect.net). SAMSON has
an open architecture, and users customize their installation with SAMSON Elements,
i.e. modules for SAMSON that may contain apps, editors, builders, force fields,
optimizers, visualizations, etc. SAMSON Elements are available with a provided
Software Development Kit for further customization. At the time of writing, about fifty
SAMSON Elements are available on SAMSON Connect, for a number of application
domains, including materials science (e.g. Brenner model, graphene generator,
Universal Force Field, Crystal creator, graphene TEM image analyser, etc.) and drug
design (GROMACS force fields, AutoDock Vina, Interactive Ramachandran plots,
Normal Modes Analysis, PEPSI-SAXS, etc.). Users may mix and match SAMSON
Elements to design their own processes and workflows, and may use Python scripting
to perform modelling and simulation tasks.

2.3 Brenner Model


To simulate the structure of defects in graphene, the atomic positions are computed from
energy minimization using the well-known bond-order Brenner interatomic potential
[15–21]. This is a parametrized version of Tersoff’s potential which includes terms to
correct for the overbindings of radicals. Brenner potential is ideally suited to the inter-
active digital modelling (virtual nano-engineering) of complex hydrocarbon structures
like carbon nanotubes [22], fullerene [23], or defective single layered graphene [24]. We
detail below how the energy and forces can be described from this potential.
Energy
The Brenner interatomic potential is particular in the sense that it mostly focuses on
covalent bonds, without long-range interaction. Hence, the potential energy VB of the
bonding interactions is a sum over interacting atoms (i.e. separated by less than 0.2 nm):
X X    
VB ¼ i j[i
½V R rij  bij V A rij  ð1Þ

The details are given in the original reference [17]. Since bonds are defined
dynamically via a bond-order function evolving with the interatomic distances, this
reactive potential has the ability to describe chemical reactions.
4 C. Guedj et al.

The potential also includes angular and dihedral terms, radical energetics and the
influence of p bonds [25].
To overcome the lack of long-range interactions, a non-bonded interaction potential
term is added. It consists in a sum of pairwise potential contributions. For simplicity,
the approach of Los et al. [26] is chosen and the Van der Waals potential term is added:
r6
VNB ðrij Þ ¼ b expðc0 rÞ  2 Vshift ð2Þ
r
to adjust the precision, using b = 3224.9 eV, c0 = 35.995 nm−1, 2 ¼ 0:01396 eV and
r = 0.344 nm.
Forces
The force terms can be calculated from the gradient of the potential V. More specifi-
cally, the Force Fi applied on atom i at position xi can be written:
X   
@V @V @rji
Fi ¼  ¼ j;ði;jÞ2b dr
ð3Þ
dxi ij dxi

where rij is the distance between atoms i and j, and b is the set of all pairs of atoms
involved in the interaction:

ij g
b ¼ fi; rij\Dmax ð4Þ

with Dmax
ij being a threshold distance depending on the atom types.
Adaptive Brenner
The adaptive version of the Brenner potential has been implemented in SAMSON [25].
Its interest is that it relies on an algorithm which incrementally updates the forces and
the total potential energy. It basically consists in an incremental dynamical update of
the set of interacting atoms and all information related to one, two, three or four atoms.
Bonds are divided into 4 types: bond with a relative motion, bonds with a change in
potential, bond with a change in conjugate number, and bonds without any change in
potential. After initialization, all terms with relative motions are updated incrementally
and after a first level and second level potential update, the forces are henceforward
updated. This allows the algorithm to linearly scale with the number of updated bonds.
Therefore the computational cost is decoupled from the number of atoms in the system
and physically-based editing becomes markedly faster.
To take advantage of adaptive Brenner, an adaptive mechanism is proposed in
SAMSON to update when minimizing a system. Such an approach in Cartesian
coordinates consists in deciding for each atom if it might move or be frozen in space.
This decision is made by comparing the norm of its potential displacement with a
threshold value, either automatically deduced from the system state or by a manual
choice fixed by the user. This implementation is an extension of the internal coordi-
nates and articulated bodies simulation [27].
This efficient update mechanism allows continuous minimization of the system
energy during the edition of the system, which helps to build realistic structures in a
Atomistic Modelling and Simulation of Transmission Electron Microscopy Images 5

very convenient manner. The user action step (creating/moving/deleting atoms) alter-
nates with the adaptative minimization steps to parallelize the structure editing and the
energy minimization.

2.4 Simulation of Microscopy Images


Once the structure is fully relaxed, it is possible to compute the corresponding high-
resolution scanning transmission microscopy image by using the QSTEM software
[28]. This program allows accurate image simulations including fully dynamic calcu-
lations. QSTEM computes the true 3D potential distribution and numerically integrates
every slice of the potential map. This enables a thickness reduction without limitations
in the multislice calculation. In addition, it is possible to explore a wide range of
experimental setups in order to evaluate the best conditions to observe the defects. Here
the images are simulated using a typical voltage of 80 kV, a C3 spherical aberration of
0.001 mm, a Cc chromatic aberration of 1 mm, an energy spread of 0.16 eV and a
convergence angle of 20 mrad, which are reasonable values to compare with high-
resolution scanning transmission electron microscopy (HRSTEM) experiments from an
aberration-corrected microscope. The detectors collection angle are chosen between 50
mrad and 200 mrad for realistic high-angle annular dark field (HAADF) conditions. In
this conditions of Z-contrast imaging, the contrast scales with the atomic number with a
power-law dependence [29]. In addition, the HRTEM images are also calculated with
QSTEM using a voltage of 80 kV, all aberration coefficients equals to zero except for
the chromatic aberration of 1 mm, a spherical aberration of 5 µm and a vibration of
3 nm in all directions. In these conditions, the HRTEM contrasts are usually compa-
rable to HRSTEM, and the superimposition of the atomic model to the (S)TEM image
provides an efficient method of validation. To outlines the most striking features and
compare the relative positions, we have used suitable look-up tables (LUT) to colorize
the experimental TEM and the simulated STEM images.

2.5 Quantitative Comparison Between Experiment and Simulation


The difference between the model and the reality is required to evaluate the trueness and
the precision of the simulations. This point is usually far from trivial. In our case, the
TEM image is compared to the simulated one, but many sources of errors and drifts
usually bias the experimental results. Graphene can be damaged via knock-on damage,
where atoms are displaced by the impacts of the imaging electron beam, therefore low-
dose and low-energy (< 80 keV) conditions are required. Other radiation damage such as
ionization [30] may also create and modify the defects during the observation, therefore
the TEM sample is usually affected by dynamical changes during the measurement. In
addition, the electrical parameters of the microscope are also subjected to possible drifts,
therefore images have to be acquired only within a small time window. A permanent
compromise between resolution and sample damage has to be obtained [31–33].
In addition, all kinds of instabilities including electrostatic, magnetic and electro-
magnetic noise [34] or instabilities caused by the sample stage can lead to image
blurring in case of long exposure times. Hence, obtaining a good image of a graphene
defect with atomic resolution is a real challenge [35].
6 C. Guedj et al.

The simulation process may be also affected by errors. HAADF-HRSTEM images


can match simulations quantitatively to within few percent [36, 37], therefore the
current understanding of image formation should be adequate when the model correctly
accounts for the contributions of thermal diffuse scattering which dominates the Z-
contrast.
However, quantitative comparisons in HRTEM may be prone to a large (100–
400%) discrepancy between theory and experiment, (Stobbs factor) [38–44]. This
factor may be impacted by the superficial amorphous layer resulting from the sample
preparation process. Many parameters are used to model the optical properties of the
microscope lens, and the precision and accuracies of these parameters strongly affect
the confidence of the fit. A quantitative approach therefore relies on both a precise
determination of the experimental parameters of the sample and the microscope, and a
reliable measure for the degree of similarity between the simulations and the experi-
mental image.
To take into account the large variations of experimental parameters used for
microscopy in the literature, we propose here to obtain a quantitative comparison
between experiment and simulation by using the projected radial distribution function
(p-RDF) of the HRTEM or the HRSTEM image transformed into atomic positions via
proper image simulation. The radial distribution function RDF (or pair correlation
function) is classically defined in statistical mechanics by the probability to find one
atom at a given distance from a reference atom. To evaluate this function, it is nec-
essary to compute the distribution of distances between all particle pairs around a
reference atom. The RDF is very sensitive to local ordering effects at the atomic scale,
for instance in graphene [45]. Here, in a way similar to astrophysics, we define the
projected RDF, labelled p-RDF by the distribution of interatomic distances projected
on the observation plan. For TEM experiments, the observation plan is obviously the
sample orientation plan, perpendicular to the electron beam. The projected distances
between spots in a HR(S)TEM image can be measured, they constitute an observable
linked to the real atomic positions, after TEM image simulations. Hence, the experi-
mental results can be quantitatively compared with the simulations using the p-RDF.

3 Results and Discussion

3.1 Introducing Remarks


In the following, we illustrate the cases of typical defects induced by electron-beam
damage during TEM observation. The probability to observe these defects is relatively
high, for instance when the electron beam energy is set up above the threshold for
knock-on damage in sp2-bonded carbon structures (i.e. >100 keV) [46, 47]. These
defects could also be obtained by other interactions, such as ionic or mechanical or by
plasma damage. Here we focus the analysis on simple topological defects, vacancies
and adatom, but the same conclusion applies to all defects we have studied so far
(dislocations, novel phases, extended defects, etc.), based on available published data.
In the following figures, colorization of experimental images is obtained with the
Fiji software [48]. The various atomistic models correspond to flake system of 1308
Atomistic Modelling and Simulation of Transmission Electron Microscopy Images 7

atoms with flat borders, built in SAMSON and optimized thanks to the Brenner
module. The clear advantage of the Brenner approach compared to ab-initio is a *4
orders of magnitude improvement in terms of simulation speed. Moreover, as we will
see, the precision achieved is sufficient to match the experimental results and we
obtained similar findings for all the graphene-based defects we found in literature,
without apparent limitation, and even for systems with tens of thousands of atoms. In
the following, all experimental data already published are used with permissions.

3.2 Stone-Wales Defect


Graphene has the ability to form nonhexagonal rings, and the simplest example is the
Stone-Wales (SW) defect [49] in which four hexagons are transformed into two pen-
tagons and two heptagons [SW(55-77) defect] by an in-plane 90° rotation of two
carbon atoms with respect to the midpoint of the C-C bond (Fig. 1).

Fig. 1. Left: atomistic ball and stick model of the unstable flat SW(55-77) defect in graphene.
Black balls represent carbon atoms. Right: Corresponding HRSTEM-HAADF simulated image.

In pure graphene, the C-C bond distance is 0.142 nm according to Pauling [50], which
is the exact value provided by our code. The simulation also matches very well previous
experimental results [51–53] and the corresponding ab-initio simulations [54, 55].
The planar configuration is unstable and may relax in the 3D sinelike or cosinelike
configuration. In our case, the minimum energy configuration of 6 eV is obtained for
the sinelike configuration (Fig. 2), in reasonable agreement with the configuration and
the energy of 5.82 ± 0.03 eV obtained by quantum Monte Carlo [55] and the value of
5.9 eV obtained by DFT-LDA [56].
An absolute comparison with the exact and precise value of the formation energy is
difficult, because of the significant dispersion of formation energies published in the
literature, depending on the DFT options or the size of the supercell [54, 55, 57–59].
Meanwhile, the buckling height value of 0.156 nm is very close to the value of
0.161 nm obtained by DFT for the biggest cell (11  11) of Ma et al. [55].
The SW defects are not simple planar defects but rather involve 3D displacements
(Fig. 3).
The Fig. 4 shows that a reasonable agreement is obtained between the experimental
and simulated p-RDF but many factors may influence these results. Experimentally, the
8 C. Guedj et al.

Fig. 2. Atomistic model of the lowest energy configuration SW(55-77) sinelike defect in
graphene, with bond distances, superimposed with the experimental HRTEM image of Kotakoski
[52, 53]. Colorization has been added to help the interpretation.

Fig. 3. Sideview of the SW(55-77) sinelike defect in orthographic projection.

HRTEM image may suffer from optical aberration, sample drift, contamination and
damage, especially with the very fragile defects of graphene. The presence of surface
oxycarboneous species or hydrogen at the surface may slighty modify the images
during these difficult measurements. The microscope parameters are usually prone to
various sources of instabilities, therefore a direct comparison between experiment and
simulation is not straightforward, nevertheless a reasonable agreement is obtained.
A first major peak around 142 pm is observed in both the experimental and sim-
ulated p-RDF, which corresponds to the carbon atoms in first nearest neighbour (C1nn)
configuration. The peak is very sharp in the simulation, because the positions are frozen
around the equilibrium configuration. In the HRTEM experiment, a significant devi-
ation from the ideal positions is observed, because of all sources of blurring and noise.
The maximum deviation between experiment and simulation is around ±40 pm, as can
be verified at looking the experimental broadening of the C1nn peak. Hence, in this
case, a fairly good quantitative agreement between experiment and simulation is
obtained, with a maximum relative deviation of atomic positions less than 40 pm.
Atomistic Modelling and Simulation of Transmission Electron Microscopy Images 9

Fig. 4. Comparison between the p-RDF deduced from the HRTEM image of Kotakoski [52, 53]
and from the atomistic simulations using the Brenner potential (bottom).

3.3 Monovacancy (V1 Defects)

V1 (5-9)
The removal of one carbon atom from the graphene network results in the formation of
a single vacancy, which has been studied both theoretically and experimentally [52–55,
60, 61].
Our simulated model matches extremely well the experimental HRTEM images
published in the literature (Figs. 5, 6 and 7). We obtained a formation energy of
5.45 eV, which is less than the range of [7.6, 7.9] eV obtained by DFT [59]. The
symmetric monovacancy (s-MV) is known to exhibit a Jahn Teller distortion, and may
reconstruct into a closed five- and nine-membered pair of rings. The reconstructed
monovacancy (r-MV) arrangement lowers the energy of the symmetrical vacancy
structure in agreement with ab-initio calculations [62].

Fig. 5. Let: atomistic model of the V1 (5-9) defect superimposed to the colorized experimental
HRTEM image [52, 53]. Right: simulated HRSTEM-HAADF image.
10 C. Guedj et al.

Another comparison with HRTEM experiment (Fig. 6) shows that the best
agreement between experiment and simulation is obtained for the reconstructed model
r-MV, in expected agreement with our lowest computed energy. Hence, our method-
ology provides a convenient and realistic approach to model the HRTEM images at the
atomic scale for this case.
We found similar findings for all the cases we have studied, without any exception.
In general, the precise comparison with experiment must include the possible extrinsic
contamination by oxycarboneous species, by hydrogen or by water for instance to be
fully significant, therefore a significant comparison should take all these possible
effects into account.
Once again, the quantitative comparison between experiment and simulation is
verified via the p-RDF, and an overall good agreement is obtained. The maximum
deviation in the atomic positions corresponds to a broadening of the C1nn peak less than
*30 pm (Fig. 8).

Fig. 6. Atomistic model of the V1 (5-9) defect superimposed to the experimental HRTEM
image published by Robertson [63]. Left: r-MV (also labelled C2v). Right: s-MV.

Fig. 7. Atomistic model of the V1 (5-9) defect r-MV superimposed to the experimental HRTEM
defect image entitled “SALVE-III-project-HRTEM-graphene-vacance-foreign-atoms-defects-
zoom.png” obtained by the SALVE III project [64].
Atomistic Modelling and Simulation of Transmission Electron Microscopy Images 11

Fig. 8. Comparison between the p-RDF deduced from the experimental image of the SALVE III
project (top) and from the Brenner atomistic simulations (bottom).

Fig. 9. Left: atomistic model of the V1 (5-5) defect superimposed to the simulated HRSTEM
image. Right: model superimposed to the experimental HRSTEM image [65].

V1 (5-5)
The V1 (5-5) state (Fig. 6) may be considered as intermediary between the V1 (5-9) r-
MV and s-MV [58]. Our calculations predicts a formation energy of 5.01 eV, which
means that such defect should be observable in principle. The simulated HRSTEM-
HAADF of Fig. 9 is so close to the image of pure graphene that it might not be
identified in most cases, except perhaps in ultra-low doses quantitative experiments to
minimize the knock-on energy provided by the incident electrons and at very low
temperatures to freeze the thermal motion.
In the supplementary movie provided by Lehtinen [65], a pattern similar to the V1
(5-5) is possibly obtained, just prior to the formation of a more extended defect.
Although the contrasts are very rapidly changing, the V1 (5-5) is presumably a reactive
seed for more complex defect growth. This type of defect has been observed experi-
mentally with the central 4-fold atom being substituted by silicon [66].
The quantitative comparison between experiment and simulation is provided with
the p-RDF (Fig. 10), and a good agreement is obtained. The maximum deviation in the
atomic positions corresponds to a broadening of the C1nn peak inferior to *40 pm.
12 C. Guedj et al.

Fig. 10. Comparison between the p-RDF of V1 (5-5) deduced from the experimental image
(top) and from the Brenner atomistic simulations (bottom).

3.4 Divacancy (V2 Defects)

V2 (5-8-5)
When two individual diffusing mono-vacancies meet they will coalesce into a nearest-
neighbour divacancy defect (equivalent to removing a carbon dimer from the lattice).
This process results in the formation of the stable pentagon–octagon–pentagon (5-8-5)
structure, which has been widely observed in high-resolution transmission electron
microscopy (HRTEM) images [52, 53, 63, 65, 67]. Our calculation provides a for-
mation energy of 7.29 eV, not far from 7.59 eV by DT-LDA [68] and 7.52 eV by
Tight Binding [69, 70].
The comparison with experiment (Fig. 11) is once again very positive, with a
nearly perfect match with published experimental TEM results. The V2 (5-8-5) defects
may mutate into the V2 (555-777) and V2 (5555-6-7777) states due to electron beam
irradiation for instance, and these transitions were observed by HRTEM [52, 53, 71].

Fig. 11. Left: atomistic model of the V2 (5-8-5) defect superimposed to the colorized
experimental HRTEM image [52, 53]. Right: simulated HRSTEM-HAADF image.
Atomistic Modelling and Simulation of Transmission Electron Microscopy Images 13

The quantitative comparison between experiment and simulation is quantified via


the p-RDF (Fig. 12), and a good agreement is obtained. The maximum deviation in the
atomic positions corresponds to a broadening of the C1nn peak inferior to *40 pm.

Fig. 12. Comparison between the p-RDF of the V2 (5-8-5) defect deduced from the
experimental image (top) and from the Brenner atomistic simulations (bottom).

Case V2 (555-777)
The structure of the V2 (555-777) divacancy is displayed in Fig. 13, showing an
excellent agreement between experiment and simulation (Fig. 14).

Fig. 13. Left: atomistic model of the V2 (555-777) defect superimposed to the colorized
experimental HRTEM image [52, 53]. Right: simulated HRSTEM-HAADF image.

Fig. 14. Comparison between the p-RDF of the V2 (555-777) defect deduced from the
experimental image (top) and from the Brenner atomistic simulations (bottom).
14 C. Guedj et al.

The calculated formation energy is 7.14 eV, in reasonable agreement with the value
of 7.41 eV obtained by DFT-PBE/DNP [72]. Hence the V2 (555-777) state should be
more stable than the V2 (5-8-5), in agreement with all DFT results published [59].

3.5 Carbon Adatom

Fig. 15. Left: atomistic model of the 1C adatom defect superimposed to the colorized
experimental HRTEM image extracted from the supplementary movie 6 provided in [65]. Right:
corresponding simulated HRSTEM-HAADF image.

The healing (self-repair) of various graphene defects by migration of adatoms has been
observed by HRTEM [71, 73]. The result of our calculation is displayed in Fig. 19.
DFT studies usually gives three stable positions of the adatom on graphene [74]. The
bridge position is predicted to be the most stable and was observed by HRTEM [75]
and by HRSTEM [76]. We obtain a formation energy of 2.69 eV, therefore such defect
should form easily during processing of a graphene-based nanodevice. The DFT
method provides a value of the order of 1.5–2 eV for the binding energy of the carbon
adatom [77, 78] (Figs. 15 and 16).

Fig. 16. Comparison between the p-RDF of the 1C adatom defect deduced from the
experimental image (top) and from the Brenner atomistic simulations (bottom).

The perpendicular distance of the adatom to the graphite surface is *0.222 nm,
not too far from the value of 0.187 nm previously obtained by ab-initio calculations for
50 atoms [78]. In our case, we find that the 5th nearest neighbours around the carbon
Another random document with
no related content on Scribd:
The Project Gutenberg eBook of Essays on
things
This ebook is for the use of anyone anywhere in the United
States and most other parts of the world at no cost and with
almost no restrictions whatsoever. You may copy it, give it away
or re-use it under the terms of the Project Gutenberg License
included with this ebook or online at www.gutenberg.org. If you
are not located in the United States, you will have to check the
laws of the country where you are located before using this
eBook.

Title: Essays on things

Author: William Lyon Phelps

Release date: December 13, 2023 [eBook #72395]

Language: English

Original publication: New York: The Macmillan Company, 1930

Credits: Aaron Adrignola, Tim Lindell and the Online Distributed


Proofreading Team at https://www.pgdp.net (This book
was produced from images made available by the
HathiTrust Digital Library.)

*** START OF THE PROJECT GUTENBERG EBOOK ESSAYS ON


THINGS ***
Transcriber’s Note
New original cover art included with this eBook is granted
to the public domain. It uses an image of the Title Page of the
original book.
Additional notes will be found near the end of this ebook.
ESSAYS ON THINGS
By WILLIAM LYON PHELPS
Essays on Modern Novelists
Essays on Russian Novelists
Essays on Books
Essays on Modern Dramatists
Essays on Things
Howells, James, Bryant and Other Essays
Reading the Bible
Teaching in School and College
Some Makers of American Literature
The Advance of the English Novel
The Advance of English Poetry
The Beginnings of the English Romantic Movement
Human Nature in the Bible
Human Nature and the Gospel
Adventures and Confessions
As I Like It, First, Second, Third Series
Archibald Marshall
Happiness
Love
Memory
Music
A Dash at the Pole
Browning—How to Know Him
ESSAYS ON THINGS
By WILLIAM LYON PHELPS
NEW YORK
THE MACMILLAN COMPANY
1930
Copyright, 1930,
By THE MACMILLAN COMPANY.
All rights reserved—no part of this
book may be reproduced in any form
without permission in writing from
the publisher.
Set up and printed. Published September, 1930.
· PRINTED IN THE UNITED STATES OF AMERICA ·
CONTENTS
PAGE
Sunrise 3
Molasses 8
Resolutions When I Come to Be Old 14
English and American Humour 20
A Pair of Socks 26
An Inspiring Cemetery 31
Ancient Football 35
Rivers 39
One Day at a Time 45
City and Country 51
Age Before Beauty 57
Church Unity 63
Political History 68
A Room Without a View 74
Tea 80
The Weather 86
War 91
Man and Boy 96
Ambition 101
Birds and Statesmen 107
Russia Before the Revolution 113
The Devil 119
The Forsyte Saga 124
Profession and Practice 130
London as a Summer Resort 135
What the Man Will Wear 140
Dreams 146
Eating Breakfast 151
The Mother Tongue 157
Our South as Cure for Flu 163
Going to Church in Paris 169
Optimism and Pessimism 175
Translations 180
Music of the Spheres 185
Dog Books 190
Going to Honolulu 196
Hymns 201
Old-Fashioned Snobs 207
A Fair City 212
Traditions 218
Spooks 224
Trial by Jury 230
Athletics 235
A Private Library All Your Own 240
The Greatest Common Divisor 246
The Great American Game 252
Ten Sixty-Six 258
Going Abroad the First Time 264
Spiritual Healing 269
Superstition 274
The Importance of the Earth 279
What Shall I Think About? 285
ESSAYS ON THINGS
I
SUNRISE

At an uncertain hour before dawn in February 1912, as I lay


asleep in my room on the top floor of a hotel in the town of Mentone,
in Southern France, I was suddenly awakened by the morning star. It
was shining with inquisitive splendour directly into my left eye. At that
quiet moment, in the last stages of the dying night, this star seemed
enormous. It hung out of the velvet sky so far that I thought it was
going to fall, and I went out on the balcony of my room to see it drop.
The air was windless and mild, and, instead of going back to bed, I
decided to stay on the balcony and watch the unfolding drama of the
dawn. For every clear dawn in this spectacular universe is a
magnificent drama, rising to a superb climax.
The morning stars sang together and I heard the sons of God
shouting for joy. The chief morning star, the one that had roused me
from slumber, recited a splendid prologue. Then, as the night paled
and the lesser stars withdrew, some of the minor characters in the
play began to appear and take their respective parts. The grey
background turned red, then gold. Long shafts of preliminary light
shot up from the eastern horizon, and then, when the stage was all
set, and the minor characters had completed their assigned rôles,
the curtains suddenly parted and the sun—the Daystar—the star of
the play, entered with all the panoply of majesty. And as I stood there
and beheld this incomparable spectacle, and gazed over the
mountains, the meadows and the sea, the words of Shakespeare
came into my mind:

Full many a glorious morning have I seen,


Flatter the mountain tops with sovereign eye.
Kissing with golden face the meadows green.
Gilding pale streams with heavenly alchemy.

It is a pity that more people do not see the sunrise. Many do not
get up early enough, many do not stay up late enough. Out of the
millions and millions of men, women and children on this globe only
a comparatively few see the sunrise, and I dare say there are many
respectable persons who have never seen it at all. One really should
not go through life without seeing the sun rise at least once,
because, even if one is fortunate enough to be received at last into
heaven, there is one sight wherein this vale of tears surpasses the
eternal home of the saints. “There is no night there,” hence there can
be no dawn, no sunrise; it is therefore better to make the most of it
while we can.
As a man feels refreshed after a night’s sleep and his morning
bath, so the sun seems to rise out of the water like a giant renewed.
Milton gave us an excellent description:

So sinks the daystar in the ocean bed,


And yet anon repairs his drooping head,
And tricks his beams, and with new-spangled ore
Flames in the forehead of the morning sky.

Browning, in his poem, Pippa Passes, compares the sunrise to a


glass of champagne, a sparkling wine overflowing the world:

DAY!
Faster and more fast,
O’er night’s brim, day boils at last:
Boils, pure gold, o’er the cloud-cup’s brim,
Where spurting and suppressed it lay,
For not a froth-flake touched the rim
Of yonder gap in the solid gray
Of the eastern cloud, an hour away;
But forth one wavelet, then another, curled.
Till the whole sunrise, not to be suppressed,
Rose, reddened, and its seething breast
Flickered in bounds, grew gold, then overflowed the world.

The sunset has a tranquil beauty but to me there is in it always a


tinge of sadness, of the sadness of farewell, of the approach of
darkness. This mood is expressed in the old hymn which in my
childhood I used to hear so often in church:

Fading, still fading, the last beam is shining,


Father in heaven! the day is declining.
Safety and innocence fly with the light,
Temptation and danger walk forth with the night.

Sorrow may endure for a night, but joy cometh in the morning,
saith the Holy Book. The sunrise has not only inexpressible majesty
and splendour, but it has the rapture of promise, the excitement of
beginning again. Yesterday has gone forever, the night is over and
we may start anew. To how many eyes, weary with wakefulness in
the long watches of the night, or flushed with fever, is the first
glimmer of the dawn welcome. The night makes every fear and
worry worse than the reality, it magnifies every trivial distress. Mark
Twain said the night brought madness—none of us is quite sane in
the darkness. That particular regret for yesterday or apprehension
for tomorrow that strikes you like a whiplash in the face at 2:45 a.m.
dwindles into an absurdity in the healthy dawn.
Mark Twain, who had expressed the difference between the
night and the morning tragically, also expressed it humorously. He
said that when he was lying awake in the middle of the night he felt
like an awful sinner, he hated himself with a horrible depression and
made innumerable good resolutions; but when at 7:30 he was
shaving himself he felt just as cheerful, healthy and unregenerate as
ever.
I am a child of the morning. I love the dawn and the sunrise.
When I was a child I saw the sunrise from the top of Whiteface and it
seemed to me that I not only saw beauty but heard celestial music.
Ever since reading in George Moore’s Evelyn Innes the nun’s
description of her feelings while listening to Wagner’s Prologue to
Lohengrin I myself never hear that lovely music rising to a
tremendous climax without seeing in imagination what was revealed
to the Sister of Mercy. I am on a mountain top before dawn; the
darkness gives way; the greyness strengthens, and finally my whole
mind and soul are filled with the increasing light.
II
MOLASSES

Before both the word molasses and the thing it signifies disappear
forever from the earth, I wish to recall its flavour and its importance to
the men and women of my generation. By any other name it would
taste as sweet; it is by no means yet extinct; but for many years maple
syrup and other commodities have taken its place on the breakfast
table. Yet I was brought up on molasses. Do you remember, in that
marvellous book, Helen’s Babies, when Toddie was asked what he had
in his pantspocket, his devastating reply to that tragic question? He
calmly answered, “Bread and molasses.”
Well, I was brought up on bread and molasses. Very often that was
all we had for supper. I well remember, in the sticky days of childhood,
being invited out to supper by my neighbour Arthur Greene. My table
manners were primitive and my shyness in formal company
overwhelming. When I was ushered into the Greene dining room not
only as the guest of honour but as the only guest, I felt like Fra Lippo
Lippi in the most august presence in the universe, only I lacked his
impudence to help me out.
The conditions of life in those days may be estimated from the fact
that the entire formal supper, even with “company,” consisted wholly
and only of bread, butter and molasses. Around the festive board sat
Mr. Greene, a terrifying adult who looked as if he had never been
young; Mrs. Greene, tight-lipped and serious; Arthur Greene, his sister
Alice, and his younger brother, Freddy. As I was company I was helped
first and given a fairly liberal supply of bread, which I unthinkingly (as
though I were used to such luxuries) spread with butter and then
covered with a thick layer of molasses. Ah, I was about to learn
something.
Mr. Greene turned to his eldest son, and enquired grimly, “Arthur,
which will you have, bread and butter or bread and molasses?”
The wretched Arthur, looking at my plate, and believing that his
father, in deference to the “company,” would not quite dare to enforce
what was evidently the regular evening choice, said, with what I
recognised as a pitiful attempt at careless assurance, “I’ll take both.”
“No, you don’t!” countered his father, with a tone as final as that of
a judge in court. His father was not to be bluffed by the presence of
company; he evidently regarded discipline as more important than
manners. The result was I felt like a voluptuary, being the only person
at the table who had the luxury of both butter and molasses. They
stuck in my throat; I feel them choking me still, after an interval of more
than fifty years.

* * * * *
The jug of molasses was on our table at home at every breakfast
and at every supper. The only variety lay in the fact (do you
remember?) that there were two distinct kinds of molasses—
sometimes we had one, sometimes the other. There was Porto Rico
molasses and there was New Orleans molasses—brunette and
blonde. The Porto Rico molasses was so dark it was almost black, and
New Orleans molasses was golden brown.
The worst meal of the three was invariably supper, and I imagine
this was fairly common among our neighbours. Breakfast was a hearty
repast, starting usually with oatmeal, immediately followed by
beefsteak and potatoes or mutton chops, sometimes ham and eggs;
but usually beef or chops. It had a glorious coda with griddle cakes or
waffles; and thus stuffed, we rose from the table like condors from their
prey, and began the day’s work. Dinner at one was a hearty meal, with
soup, roast, vegetables and pie.
Supper consisted of “remainders.” There was no relish in it, and I
remember that very often my mother, who never complained vocally,
looking at the unattractive spread with lack-lustre eye, would either
speak to our one servant or would disappear for a moment and return
with a cold potato, which it was clear she distinctly preferred to the
sickening sweetish “preserves” and cookies or to the bread and
molasses which I myself ate copiously.
However remiss and indifferent and selfish I may have been in my
conduct toward my mother—and what man does not suffer as he
thinks of this particular feature of the irrecoverable past?—it does me
good to remember that, after I came to man’s estate, I gave my mother
what it is clear she always and in vain longed for in earlier years, a
good substantial dinner at night.
At breakfast we never put cream and sugar on our porridge; we
always put molasses. Then, if griddle cakes followed the meat, we
once more had recourse to molasses. And as bread and molasses
was the backbone of the evening meal, you will see what I mean when
I say I swam to manhood through this viscous sea. In those days youth
was sweet.
The transfer of emphasis from breakfast to supper is the chief
distinguishing change in the procession of meals as it was and as it
became. It now seems incredible that I once ate large slabs of steak or
big chops at breakfast, but I certainly did. And supper, which
approached the vanishing point, turned into dinner in later years.
Many, many years ago we banished the molasses jug and even
the lighter and more patrician maple syrup ceased to flow at the
breakfast table. I am quite aware that innumerable persons still eat
griddle cakes or waffles and syrup at the first meal of the day. It is
supposed that the poet-artist Dante Gabriel Rossetti ruined his health
by eating huge portions of ham and eggs, followed by griddle cakes
and molasses, for breakfast. To me there has always been something
incongruous between syrup and coffee; they are mutually destructive;
one spoils the taste of the other.
Yet waffles and syrup are a delectable dish; and I am quite certain
that nectar and ambrosia made no better meal. What to do, then? The
answer is simple. Eat no griddle cakes, no waffles and no syrup at
breakfast; but use these commodities for dessert at lunch. Then comes
the full flavour.
Many taverns now have hit upon the excellent idea of serving only
two dishes for lunch or dinner—chicken and waffles. This obviates the
expense of waste, the worry of choice, the time lost in plans. And what
combination could possibly be better?
One of the happiest recollections of my childhood is the marvelous
hot, crisp waffle lying on my plate, and my increasing delight as I
watched the molasses filling each square cavity in turn. As the English
poet remarked, “I hate people who are not serious about their meals.”

You might also like