Spintronics Handbook, Second Edition:

Spin Transport and Magnetism: Volume

Two: Semiconductor Spintronics
Evgeny Y. Tsymbal (Editor)
Visit to download the full and correct content document:
https://textbookfull.com/product/spintronics-handbook-second-edition-spin-transport-a
nd-magnetism-volume-two-semiconductor-spintronics-evgeny-y-tsymbal-editor/
More products digital (pdf, epub, mobi) instant
download maybe you interests ...

Spintronics Handbook, Second Edition: Spin Transport

and Magnetism: Volume One: Metallic Spintronics Evgeny
Y. Tsymbal (Editor)

https://textbookfull.com/product/spintronics-handbook-second-
edition-spin-transport-and-magnetism-volume-one-metallic-
spintronics-evgeny-y-tsymbal-editor/

Spintronics Handbook, Second Edition: Spin Transport

and Magnetism: Volume Three: Nanoscale Spintronics and
Applications Evgeny Y. Tsymbal (Editor)

https://textbookfull.com/product/spintronics-handbook-second-
edition-spin-transport-and-magnetism-volume-three-nanoscale-
spintronics-and-applications-evgeny-y-tsymbal-editor/

Coulson and Richardson’s Chemical Engineering, Fourth

Edition: Volume 3A: Chemical and Biochemical Reactors
and Reaction Engineering R. Ravi

https://textbookfull.com/product/coulson-and-richardsons-
chemical-engineering-fourth-edition-volume-3a-chemical-and-
biochemical-reactors-and-reaction-engineering-r-ravi/

Rare earth and transition metal doping of semiconductor

materials synthesis magnetic properties and room
temperature spintronics 1st Edition Dierolf

https://textbookfull.com/product/rare-earth-and-transition-metal-
doping-of-semiconductor-materials-synthesis-magnetic-properties-
and-room-temperature-spintronics-1st-edition-dierolf/
Noise in Spintronics From Understanding to Manipulation
First Edition Aliev

https://textbookfull.com/product/noise-in-spintronics-from-
understanding-to-manipulation-first-edition-aliev/

Quantum Magnetism Spin Waves and Optical Cavities

Silvia Viola Kusminskiy

https://textbookfull.com/product/quantum-magnetism-spin-waves-
and-optical-cavities-silvia-viola-kusminskiy/

Biota Grow 2C gather 2C cook Loucas

https://textbookfull.com/product/biota-grow-2c-gather-2c-cook-
loucas/

Foodborne Disease Handbook. Volume 2: Viruses,

Parasites, Pathogens, and HACCP Y. H. Hui

https://textbookfull.com/product/foodborne-disease-handbook-
volume-2-viruses-parasites-pathogens-and-haccp-y-h-hui/

Handbook of Visual Optics, Volume Two : Instrumentation

and Vision Correction 1st Edition Artal

https://textbookfull.com/product/handbook-of-visual-optics-
volume-two-instrumentation-and-vision-correction-1st-edition-
artal/
Spintronics Handbook:
Spin Transport and
Magnetism,
Second Edition
Semiconductor Spintronics—Volume Two
Spintronics Handbook:
Spin Transport and
Magnetism,
Second Edition
Semiconductor Spintronics—Volume Two

Edited by
Evgeny Y. Tsymbal and Igor Ž utić
CRC Press
Taylor & Francis Group
6000 Broken Sound Parkway NW, Suite 300
Boca Raton, FL 33487-2742

© 2019 by Taylor & Francis Group, LLC

CRC Press is an imprint of Taylor & Francis Group, an Informa business

No claim to original U.S. Government works

Printed on acid-free paper

International Standard Book Number-13: 978-1-4987-6960-0 (Hardback)

This book contains information obtained from authentic and highly regarded sources. Reasonable
efforts have been made to publish reliable data and information, but the author and publisher cannot
assume responsibility for the validity of all materials or the consequences of their use. The authors
and publishers have attempted to trace the copyright holders of all material reproduced in this
publication and apologize to copyright holders if permission to publish in this form has not been
obtained. If any copyright material has not been acknowledged please write and let us know so we
may rectify in any future reprint.

Except as permitted under U.S. Copyright Law, no part of this book may be reprinted, reproduced,
transmitted, or utilized in any form by any electronic, mechanical, or other means, now known
or hereafter invented, including photocopying, microfilming, and recording, or in any information
storage or retrieval system, without written permission from the publishers.

For permission to photocopy or use material electronically from this work, please access www.copy-
right.com (http://www.copyright.com/) or contact the Copyright Clearance Center, Inc. (CCC),
222 Rosewood Drive, Danvers, MA 01923, 978-750-8400. CCC is a not-for-profit organization that
provides licenses and registration for a variety of users. For organizations that have been granted a
photocopy license by the CCC, a separate system of payment has been arranged.

Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and
are used only for identification and explanation without intent to infringe.

Visit the Taylor & Francis web site at

http://www.taylorandfrancis.com

and the CRC Press web site at

http://www.crcpress.com

Cover illustration courtesy of Markus Lindemann, Nils C. Gerhardt, and Carsten Brenner.

The e-book of this title contains full colour figures and can be purchased here: http://www.crcpress.
com/9780429434235. The figures can also be found under the ‘Additional Resources’ tab.
Contents

Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii
Preface. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xi
About the Editors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xiii
List of Contributors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xv

Section IV—Spin Transport and

Dynamics in Semiconductors

Chapter 1. Spin Relaxation and Spin Dynamics in Semiconductors and

Graphene. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Jaroslav Fabian and M. W. Wu
Chapter 2. Electrical Spin Injection and Transport in Semiconductors . . . . . . . . . 59
Berend T. Jonker
Chapter 3. Spin Transport in Si and Ge: Hot Electron Injection and
Detection Experiments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Ian Appelbaum
Chapter 4. Tunneling Magnetoresistance, Spin-Transfer and
Spinorbitronics with (Ga,Mn)As. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
J.-M. George, D. Quang To, T. Huong Dang, E. Erina,
T. L. Hoai Nguyen, H.-J. Drouhin, and H. Jaffrès
Chapter 5. Spin Transport in Organic Semiconductors . . . . . . . . . . . . . . . . . . . . . . 247
Valentin Dediu, Luis E. Hueso, and Ilaria Bergenti

v
vi   Contents

Chapter 6. Spin Transport in Ferromagnet/III–V Semiconductor

Heterostructures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269
Paul A. Crowell and Scott A. Crooker
Chapter 7. Spin Polarization by Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317
Sergey D. Ganichev, Maxim Trushin, and John Schliemann
Chapter 8. Anomalous and Spin-Injection Hall Effects . . . . . . . . . . . . . . . . . . . . . . 339
Jairo Sinova, Jörg Wunderlich, and Tomás Jungwirth

Section V—Magnetic Semiconductors,

Oxides and Topological Insulators

Chapter 9. Magnetic Semiconductors: III–V Semiconductors. . . . . . . . . . . . . . . . 371

Carsten Timm
Chapter 10. Magnetism of Dilute Oxides. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
J.M.D. Coey
Chapter 11. Magnetism of Complex Oxide Interfaces . . . . . . . . . . . . . . . . . . . . . . . . 457
Satoshi Okamoto, Shuai Dong, and Elbio Dagotto
Chapter 12. LaAlO3/SrTiO3: A Tale of Two Magnetisms. . . . . . . . . . . . . . . . . . . . . . . . 489
Yun-Yi Pai, Anthony Tylan-Tyler, Patrick Irvin, and Jeremy Levy
Chapter 13. Electric-Field Controlled Magnetism. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 519
Fumihiro Matsukura and Hideo Ohno
Chapter 14. Topological Insulators: From Fundamentals to Applications. . . . . . 543
Matthew J. Gilbert and Ewelina M. Hankiewicz
Chapter 15. Quantum Anomalous Hall Effect in Topological Insulators . . . . . . . 573
Abhinav Kandala, Anthony Richardella, and Nitin Samarth
Index. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 591
Foreword

S
pintronics is a field of research in which novel properties of materials,
especially atomically engineered magnetic multilayers, are the result of
the manipulation of currents of spin-polarized electrons. Spintronics, in
its most recent incarnation, is a field of research that is almost 30 years old.
To date, its most significant technological impact has been in the develop-
ment of a new generation of ultra-sensitive magnetic recording read heads
that have powered magnetic disk drives since late 1997. These magnetoresis-
tive read heads, which use spin-valves based on spin-dependent scattering at
magnetic/non-magnetic interfaces and, since 2007, magnetic tunnel junctions
(MTJs) based on spin-dependent tunneling across ultra-thin insulating layers,
have a common thin film structure. These structures involve “spin engineer-
ing” to eliminate the influence of long-range magneto-dipole fields via the use
of synthetic or artificial antiferromagnets, which are formed from thin mag-
netic layers coupled antiferromagnetically via the use of atomically thin layers
of ruthenium. These structures involve the discoveries of spin-dependent tun-
neling in 1975, giant magnetoresistance at low temperatures in Fe/Cr in 1988,
oscillatory interlayer coupling in 1989, the synthetic antiferromagnet in 1990,
giant magnetoresistance at room temperature in Co/Cu and related multilayers
in 1991, and the origin of giant magnetoresistance as being a result of predomi-
nant interface scattering in 1991–1993. Together, these discoveries led to the
spin-valve recording read head that was introduced by IBM in 1997 and led,
within a few years, to a 1,000-fold increase in the storage capacity of magnetic
disk drives. This rapid pace of improvement has stalled over the past years
as the difficulty of stabilizing tiny magnetic bits against thermal fluctuations
whilst at the same time being able to generate large enough magnetic fields to
write them, has proved intractable. The possibility of creating novel spintronic
magnetic memory-storage devices to rival magnetic disk drives in capacity and
to vastly exceed them in performance has emerged in the form of Racetrack
Memory. This concept and the physics underlying it are discussed in this book,

vii
viii   Foreword

together with a more conventional spintronic memory, magnetic random

access memory (MRAM). MRAM is based on MTJ magnetic memory bits,
each one accessed in a two-dimensional cross point array via a transistor.
The fundamental concept of MRAM was proposed in 1995 using local fields
to write the MTJ elements. This basic concept was proven in 1999 with
the subsequent demonstration of large-scale, fully integrated 64 Mbit mem-
ory chips in the following decade. Writing these same elements using spin
angular momentum from sufficiently large spin-polarized currents passed
through the tunnel junction elements emerged in the 1990s and is now key
to the development of massive-scale MRAM chips. The second edition of
this book discusses these emerging spintronic technologies as well as other
breakthroughs and key advances, both fundamental and applied, in the field
of spintronics.
Beyond MRAM and Racetrack Memory, this book elucidates other
nascent opportunities in spintronics that do not rely directly on magneto-
resistive effects, such as fault-tolerant quantum computing, non-Boolean
spin-wave logic, and lasers that are enhanced by spin-polarized carriers. It
is interesting that spintronics is a field of research that continues to surprise
even though the fundamental property of spin was realized nearly a century
ago, and the basic concept of spin-dependent scattering in magnetic materi-
als was introduced by Neville Mott just shortly after the notion of “spin” was
conceived.
Since the first edition of this book, spintronics has so much evolved
that a new name of “spin-orbitronics” has been coined to describe these new
discoveries and developments. In the first edition of this book, spin-orbit
coupling was regarded rather negatively as a property that leads to mix-
ing between spin-channels and the loss of spin angular momentum from
spin currents to the lattice, thereby limiting the persistence of these same
spin currents, both temporally and spatially. In this edition, several physi-
cal phenomena derived from spin-orbit coupling are shown to be key to the
development of several new technologies, such as, in particular, the current-
induced motion of a series of magnetic domain walls that underlies Racetrack
Memory. This relies especially on the generation of pure spin currents via
the spin Hall effect (SHE). The magnitude of the SHE was thought for some
time to be very small in conventional metals, but over the past few years,
this has rather been shown to be incorrect. Significant and useful SHEs have
been discovered in a number of heavy materials where spin-orbit coupling is
large. These spin currents can be used to help move domain walls or to help
switch the magnetization direction of nanoscale magnets. Whether they
can be usefully used for MRAM, however, is still a matter of debate.
Another very interesting development since the first edition of this book
is the explosive increase in our understanding and knowledge of topological
insulators and their cousins including, most recently, Weyl semi-metals. The
number of such materials has increased astronomically and, indeed, it is now
understood that a significant fraction of all extant materials are “topologi-
cal”. What this means, in some cases, is that the spin of the carriers is locked
to their momentum leading, for example, to the Quantum Spin Hall Effect.
 Foreword    ix

The very concept of these materials is derived from band inversion, which is
often due to strong spin-orbit coupling. From a spintronics perspective, the
novel properties of these materials can lead to intrinsic spin currents and
spin accumulations that are topologically “protected” to a greater or lesser
degree. The concept of topological protection is itself evolving.
Distinct from electronic topological effects are topological spin textures
such as skyrmions and anti-skyrmions. The latter were only experimentally
found 2 years ago. These spin textures are nano-sized magnetic objects that
are related to magnetic bubbles, which are also found in magnetic materi-
als with perpendicular magnetic anisotropy but which have boundaries or
walls that are innately chiral. The chirality is determined by a vector mag-
netic exchange – a Dzyaloshinskii–Moriya interaction (DMI) – that is often
derived from spin-orbit coupling. The DMI favors orthogonal alignment of
neighboring magnetic moments in contrast to conventional ferromagnetic
or antiferromagnetic exchange interactions that favor collinear magnetic
arrangements. Skyrmion and anti-skyrmion spin textures have very interest-
ing properties that could also be useful for Racetrack Memories. Typically,
skyrmions and anti-skyrmions evolve from helical or conical spin textures.
The magnetic phase of such systems can have complex dependences on tem-
perature, magnetic field, and strain. Some chiral antiferromagnetic spin tex-
tures have interesting properties such as an anomalous Hall effect (AHE),
which is derived from their topological chiral spin texture in the absence of
any net magnetization. In practice, however, a small unbalanced moment is
needed to set the material in a magnetic state with domains of the same chi-
rality in order to evidence the AHE. On the other hand, these same chiral
textures can display an intrinsic spin Hall effect whose sign is independent
of the chirality of the spin texture.
The DMI interaction can also result from interfaces particularly
between heavy metals and magnetic layers. Such interfacial DMIs can give
rise to chiral domain walls as well as magnetic bubbles with chiral domain
walls – somewhat akin to skyrmions. The tunability of the interfacial DMI
via materials engineering makes it of special interest.
Thus, since the first edition of this book, chiral spin phenomena, namely
chiral spin textures and domain walls, and the spin Hall effect itself, which is
innately chiral, have emerged as some of the most interesting developments
in spintronics. The impact of these effects was largely unanticipated. It is
not too strong to say that we are now in the age of “chiraltronics”!
Another topic that has considerably advanced since the first edition of
this book is the field of what is often now termed spin caloritronics, namely
the use of temperature gradients to create spin currents and the use of ther-
mal excitations of magnetic systems, i.e. magnons, for magnonic devices.
Indeed, magnons carry spin angular momentum and can propagate over
long distances. Perhaps here it is worth mentioning the extraordinarily long
propagation distances of spin currents via magnons in antiferromagnetic
systems that have recently been realized.
Recently discovered atomically thin ferromagnets reveal how the pres-
ence of spin-orbit coupling overcomes the exclusion of two-dimensional
x   Foreword

ferromagnetism expected from the Mermin-Wagner theorem. These two-

dimensional materials, which are similar to graphene in that they can readily
be exfoliated from bulk samples, provide a rich platform to study magnetic
proximity effects and transform a rapidly growing class of van der Waals
materials. Through studies of magnetic materials, it is possible to reveal
their peculiar quantum manifestations. Topological insulators can become
magnetic by doping with 3d transition metals; the quantum anomalous Hall
effect has been discovered in such materials, and heterostructures that con-
sist of magnetic and non-magnetic topological insulators have been used to
demonstrate current-induced control of magnetism.
Spintronics remains a vibrant research field that spans many disciplines
ranging from materials science and chemistry to physics and engineering.
Based on the rich developments and discoveries over the past thirty years,
one can anticipate a bountiful future.

Stuart Parkin
Director at the Max Planck Institute of Microstructure Physics
Halle (Saale), Germany
and
Alexander von Humboldt Professor, Martin-Luther-Universität
Halle-Wittenberg, Germany
Max Planck Institute of Microstructure Physics
Halle (Saale), Germany
Preface

T
he second edition of this book continues the path from the foundations
of spin transport and magnetism to their potential device applications,
usually referred to as spintronics. Spintronics has already left its mark
on several emerging technologies, e.g., in magnetic random access memories
(MRAMs), where the fundamental properties of magnetic tunnel junctions are
key for device performance. Further, many intricate fundamental phenomena
featured in the first edition have since evolved from an academic curiosity into
the potential basis for future spintronic devices. Often, as in the case of spin
Hall effects, spin-orbit torques, and electrically-controlled magnetism, the
research has migrated from the initial low-temperature discovery in semicon-
ductors to technologically more suitable room temperature manifestations in
metallic systems. This path from exotic behavior to possible application contin-
ues to the present day and is reflected in the modified title of the book, which
now explicitly highlights “spintronics,” as its overarching scope. Exotic topics
of today, for example, pertaining to topological properties, such as skyrmions,
topological insulators, or even elusive Majorana fermions, may become suitable
platforms for the spintronics of tomorrow. Impressive progress has been seen in
the last decade in the field of spin caloritronics, which has evolved from a curi-
ous prediction 30 years ago to a vibrant field of research.
Since the first edition, there has been a significant evolution in material sys-
tems displaying spin-dependent phenomena, making it difficult to cover even
the key developments in a single volume. The initially featured chapter on gra-
phene spintronics is now complemented by a chapter on the spin-dependent
properties of a broad range of two-dimensional materials that can form a myriad
of heterostructures coupled by weak van der Waals forces and support super-
conductivity or ferromagnetism even in a single atomic layer. Exciting develop-
ments have also been seen in the field of complex oxide heterostuctures, where
the non-trivial properties are driven by the interplay between the electronic,
spin, and structural degrees of freedom. A particular example is the magnetism

xi
xii   Preface

emerging in two-dimensional electron gases at oxide interfaces composed of

otherwise nonmagnetic constituents. The updated structure of a significantly
expanded book reflects various materials developments and it is now the-
matically divided into three volumes, each based on broadly defined metallic
and semiconductor systems or their nanoscale and applied aspects.
Spintronics becomes more and more attractive as a viable platform for
propelling semiconducting technology beyond its current limits. Various
schemes have been proposed to enhance the functionalities of the exist-
ing technologies based on the spin degree of freedom. Among them is the
voltage control of magnetism, exploiting the nonvolatile performance of
ferromagnet-based devices in conjunction with their low-power operation.
Another approach is utilizing spin currents carried by magnons to trans-
port and process information. Magnon spintronics involves interesting fun-
damental physics and offers novel spin wave-based computing technologies
and logic circuits. Optical control of magnetism is another approach, which
has attracted a lot of attention due to the recent discovery of the all-optical
switching of magnetization and its realization at the nanoscale. Chapters on
these subjects are included in the new edition of the book.
Nearly nine decades after the discovery of superconducting proximity
effects by Ragnar Holm and Walther Meissner, several new chapters now
explore how a given material can be transformed through proximity effects
whereby it acquires the properties of its neighbors, for example, becoming
superconducting, magnetic, topologically non-trivial, or with an enhanced
spin-orbit coupling. Such proximity effects not only complement the con-
ventional methods of designing materials by doping or functionalization but
can also overcome their various limitations and enable yet more unexplored
spintronic applications.
We are grateful both to the authors who set aside their many priorities
and contributed new chapters, which have significantly expanded the scope
of this book, as well as to those who patiently provided valuable updates to
their original chapters and kept this edition even more timely. The comple-
tion of the second edition was again greatly facilitated by Verona Skomski,
who tirelessly collected authors’ contributions and assisted their prepara-
tion for the submission to the publisher. We acknowledge the support of
NSF-DMR, NSF-MRSEC, NSF-ECCS, SRC, DOE-BES, US ONR which,
through the support of our research and involvement in spintronics, has also
enabled our editorial work. We are thankful to our families for their sup-
port, patience, and understanding during extended periods of time when we
remained focused on the completion of this edition.

Evgeny Y. Tsymbal
Department of Physics and Astronomy,
Nebraska Center for Materials and Nanoscience, University of Nebraska,
Lincoln, Nebraska 68588, USA
Igor Ž utić
Department of Physics, University at Buffalo,
State University of New York, Buffalo, New York 14260, USA
About the Editors

Evgeny Y. Tsymbal is a George Holmes University Distinguished Professor

at the Department of Physics and Astronomy of the University of Nebraska-
Lincoln (UNL), and Director of the UNL’s Materials Research Science and
Engineering Center (MRSEC). He joined UNL in 2002 as an Associate
Professor, was promoted to a Full Professor with Tenure in 2005 and named
a Charles Bessey Professor of Physics in 2009 and George Holmes University
Distinguished Professor in 2013. Prior to his appointment at UNL, he was a
research scientist at University of Oxford, United Kingdom, a research fellow
of the Alexander von Humboldt Foundation at the Research Center-Jülich,
Germany, and a research scientist at the Russian Research Center “Kurchatov
Institute,” Moscow. Evgeny Y. Tsymbal’s research is focused on computational
materials science aiming at the understanding of fundamental properties of
advanced ferromagnetic and ferroelectric nanostructures and materials relevant
to nanoelectronics and spintronics. He has published over 230 papers, review
articles, and book chapters and presented over 180 invited presentations in the
areas of spin transport, magnetoresistive phenomena, nanoscale magnetism,
complex oxide heterostructures, interface magnetoelectric phenomena, and
ferroelectric tunnel junctions. Evgeny Y. Tsymbal is a fellow of the American
Physical Society, a fellow of the Institute of Physics, UK, and a recipient of the
UNL’s College of Arts & Sciences Outstanding Research and Creativity Award
(ORCA). His research has been supported by the National Science Foundation,
Semiconductor Research Corporation, Office of Naval Research, Department of
Energy, Seagate Technology, and the W. M. Keck Foundation.

Igor Ž utić received his Ph.D. in theoretical physics at the University of

Minnesota, after undergraduate studies at the University of Zagreb, Croatia.
He was a postdoc at the University of Maryland and the Naval Research Lab.
In 2005 he joined the State University of New York at Buffalo as an Assistant

xiii
xiv   About the Editors

Professor of Physics and got promoted to an Associate Professor in 2009

and to a Full Professor in 2013. He proposed and chaired Spintronics 2001:
International Conference on Novel Aspects of Spin-Polarized Transport and
Spin Dynamics, at Washington DC. Work with his collaborators spans a
range of topics from high-temperature superconductors, Majorana fermions,
proximity effects, van der Waals materials, and unconventional magnetism,
to the prediction and experimental realization of spin-based devices that are
not limited to magnetoresistance. He has published over 100 refereed articles
and given over 150 invited presentations on spin transport, magnetism, spin-
tronics, and superconductivity. Igor Žutić is a recipient of the 2006 National
Science Foundation CAREER Award, the 2019 State University of New York
Chancellor’s Award for Excellence in Scholarship and Creative Activities,
the 2005 National Research Council/American Society for Engineering
Education Postdoctoral Research Award, and the National Research Council
Fellowship (2003–2005). His research is supported by the National Science
Foundation, the Office of Naval Research, the Department of Energy, Office
of Basic Energy Sciences, the Defense Advanced Research Project Agency,
and the Airforce Office of Scientific Research. He is a fellow of the American
Physical Society.
Contributors

Ian Appelbaum Elbio Dagotto

Department of Physics
University of Maryland
College Park, Maryland
Ilaria Bergenti
Institute for Nanostructured
Materials Studies
Bologna, Italy
Department of Physics and
Astronomy
The University of Tennessee
Knoxville, Tennessee
and
Materials Science and Technology
Division
Oak Ridge National Laboratory
Oak Ridge, Tennessee

J. M. D. Coey
T. Huong Dang
Centre for Research on Adaptive
Unité Mixte de Physique
Nanostructures and Nanodevices
Centre National de la Recherche
Trinity College
Scientifique-Thales
Dublin, Ireland
Université Paris-Saclay
and
Scott A. Crooker Laboratoire des Solides Irradiés,
National High Magnetic Field Ecole Polytechnique, CNRS and
Laboratory CEA/DRF/IRAMIS
Los Alamos National Laboratory Institut Polytechnique de Paris
Los Alamos, New Mexico Palaiseau, France

Paul A. Crowell Valentin Dediu

School of Physics and Astronomy Institute for Nanostructured
University of Minnesota Materials Studies
Minneapolis, Minnesota Bologna, Italy

xv
xvi   Contributors
Shuai Dong
Department of Physics
Southeast University
Nanjing, China
H.-J. Drouhin
Laboratoire des Solides Irradiés,
Ecole Polytechnique
CNRS and CEA-DRF-IRAMIS
Institut Polytechnique de Paris
Palaiseau, France
E. Erina
Laboratoire des Solides Irradiés,
Ecole Polytechnique
CNRS and CEA-DRF-IRAMIS
Institut Polytechnique de Paris
Palaiseau, France
Jaroslav Fabian
Department of Physics
University of Regensburg
Regensburg, Germany
Sergey D. Ganichev
Department of Physics
University of Regensburg
Regensburg, Germany
Jean Marie George
Unité Mixte de Physique
Centre National de la Recherche
Scientifique-Thales
Université Paris-Saclay
Palaiseau, France
Matthew J. Gilbert
Department of Electrical and
Computer Engineering
University of Illinois at
Urbana-Champaign
Urbana, Illinois
and
Department of Electrical
Engineering Stanford
University
Stanford, California
Ewelina M. Hankiewicz
Institute for Theoretical Physics
and Astrophysics
Würzburg University
Würzburg, Germany
Luis E. Hueso
CIC nanoGUNE Consolider
Basque Foundation for Science
Bilbao, Spain
Patrick Irvin
Department of Physics and
Astronomy
University of Pittsburgh
and
Pittsburgh Quantum Institute
Pittsburgh, Pennsylvania
Henri Jaffrès
Unité Mixte de Physique
Centre National de la Recherche
Scientifique-Thales
Université Paris-Saclay
Palaiseau, France
Berend T. Jonker
Magnetoelectronic Materials and
Devices Branch
Materials Science and Technology
Division
Naval Research Laboratory
Washington, DC
Tomás Jungwirth
Institute of Physics
Academy of Sciences of the Czech
Republic
Praha, Czech Republic
and
School of Physics and Astronomy
University of Nottingham
Nottingham, United Kingdom
Abhinav Kandala
IBM T.J. Watson Research Center
Yorktown Heights, New York

Jeremy Levy
Department of Physics and
Astronomy
University of Pittsburgh
and
Pittsburgh Quantum Institute
Pittsburgh, Pennsylvania
Fumihiro Matsukura
Tohoku University
Sendai, Japan
T. L. Hoai Nguyen
Institute of Physics, VAST, 10
Daotan,
Badinh, Hanoi, Vietnam
Hideo Ohno
Tohoku University
Sendai, Japan
Satoshi Okamoto
Materials Science and Technology
Division
Oak Ridge National Laboratory
Oak Ridge, Tennessee
Yun-Yi Pai
Department of Physics and
Astronomy
University of Pittsburgh
and
Pittsburgh Quantum Institute
Pittsburgh, Pennsylvania
Anthony Richardella
Department of Physics and
Materials Research Institute
The Pennsylvania State University
University Park, Pennsylvania
Nitin Samarth
Department of Physics and
Materials Research Institute
The Pennsylvania State University
University Park, Pennsylvania
Contributors    xvii
John Schliemann
Department of Physics
University of Regensburg
Regensburg, Germany
Jairo Sinova
Johannes Gutenberg Universität
Mainz
Institute of Physics
Mainz, Germany
Carsten Timm
Institute of Theoretical Physics
Technische Universität Dresden
Dresden, Germany
Duy-Quang To
Laboratoire des Solides Irradiés,
Ecole Polytechnique
CNRS and CEA-DRF-IRAMIS
Institut Polytechnique de Paris
Palaiseau, France
Maxim Trushin
Centre for Advanced 2D Materials
National University of Singapore
Singapore
Anthony Tylan-Tyler
Department of Physics and
Astronomy
University of Pittsburgh
and
Pittsburgh Quantum Institute
Pittsburgh, Pennsylvania
M. W. Wu
Hefei National Laboratory for
Physical Sciences at Microscale
and Department of Physics
University of Science and
Technology of China
Hefei, Anhui, China
Jörg Wunderlich
Hitachi Cambridge Laboratory
Cambridge, United Kingdom
 Section IV
Spin Transport
and Dynamics in
Semiconductors
Chapter 1 Spin Relaxation and Spin Dynamics in
Semiconductors and Graphene 3
Jaroslav Fabian and M. W. Wu
Chapter 2 Electrical Spin Injection and Transport in
Semiconductors59
 
Berend T. Jonker
Chapter 3 Spin Transport in Si and Ge: Hot Electron
Injection and Detection Experiments 149
 
Ian Appelbaum

1
2   Section IV.  Spin Transport and Dynamics in Semiconductors

Chapter 4 Tunneling Magnetoresistance, Spin-Transfer

and Spinorbitronics with (Ga,Mn)As 175
 J.-M. George, D. Quang To, T. Huong Dang, E. Erina,
T. L. Hoai Nguyen, H.-J. Drouhin, and H. Jaffrès
Chapter 5 Spin Transport in Organic Semiconductors 247
  Valentin Dediu, Luis E. Hueso, and Ilaria Bergenti
Chapter 6 Spin Transport in Ferromagnet/III–V
Semiconductor Heterostructures 269
  Paul A. Crowell and Scott A. Crooker
Chapter 7 Spin Polarization by Current 317
  Sergey D. Ganichev, Maxim Trushin, and John Schliemann
Chapter 8 Anomalous and Spin-Injection Hall Effects 339
  Jairo Sinova, Jörg Wunderlich, and Tomás Jungwirth
 1
Spin Relaxation and
Spin Dynamics in
Semiconductors
and Graphene
Jaroslav Fabian and M. W. Wu

1.1 Toy Model: Electron Spin in a Fluctuating

Magnetic Field 5
1.1.1 Motional Narrowing 12
1.1.2 Reversible Dephasing, Spin Ensemble,
Random Walk in Inhomogeneous Fields 12
1.1.2.1 Reversible Spin Dephasing: Spin
Ensemble in Spatially Random
Magnetic Field 12
1.1.2.2 Spin Echo 14

3
4   Chapter 1.  Spin Relaxation and Spin Dynamics in Semiconductors

1.1.2.3 Spin Random Walk in

Inhomogeneous Magnetic Field 14
1.1.3 Quantum Mechanical Description 16
1.1.4 Spin Relaxation of Conduction Electrons 16
1.2 D’yakonov–Perel’ Mechanism 18
1.2.1 Spin–Orbit Field 18
1.2.2 Kinetic Equation for the Spin 19
1.2.3 Persistent Spin Helix 21
1.3 Elliott–Yafet Mechanism 24
1.3.1 Electron-Impurity Scattering 25
1.3.1.1 Spin–Orbit Coupling by the Impurity 25
1.3.1.2 Spin–Orbit Coupling by the Host
Lattice 26
1.3.2 Electron–Phonon Scattering 27
1.3.2.1 Yafet Relation 29
1.4 Results Based on Kinetic-Spin-Bloch-Equation
Approach 31
1.4.1 Kinetic Spin Bloch Equations 31
1.4.2 Spin Relaxation/Dephasing 32
1.4.3 Spin Diffusion/Transport 41
1.5 Spin Relaxation in Graphene 47
Acknowledgments 51
References 51

T
he spin of conduction electrons decays due to the combined effect of
spin–orbit coupling and momentum scattering. The spin–orbit cou-
pling couples the spin to the electron momentum that is randomized
by momentum scattering off of impurities and phonons. Seen from the per-
spective of the electron spin, the spin–orbit coupling gives a spin precession,
while momentum scattering makes this precession randomly fluctuating,
both in magnitude and orientation.
The specific mechanisms for the spin relaxation of conduction elec-
trons were proposed by Elliott [1] and Yafet [2], for conductors with a cen-
ter of inversion symmetry, and by D’yakonov and Perel’ [3], for conductors
without an inversion center. In p-doped semiconductors, there is in play
another spin relaxation mechanism, due to Bir et al. [4]. As this has a rather
limited validity we do not describe it here. More details can be found in
reviews [5–9].
 1.1 Toy Model: Electron Spin in a Fluctuating Magnetic Field    5

Before we discuss the two main mechanisms, we introduce a toy model

that captures the relevant physics of spin relaxation without resorting
explicitly to quantum mechanics: the electron spin in a randomly fluctuating
magnetic field. We will find certain universal qualitative features of the spin
relaxation and dephasing in physically important situations.
The next part of this review covers the experimental as well as compu-
tational status of the field, discussing the spin relaxation in semiconductors
under varying conditions such as temperature and doping density.

1.1 TOY MODEL: ELECTRON SPIN IN A

FLUCTUATING MAGNETIC FIELD
Consider an electron spin S (or the corresponding magnetic moment) in the
presence of an external time-independent magnetic field B0 = B0z, giving rise
to the Larmor precession frequency ω0 = ω 0z, and a fluctuating time-depen-
dent field B(t) giving the Larmor frequency ω(t) (see Figure 1.1). We assume
that the field fluctuates about zero and is correlated on the -timescale of τc:

w(t ) = 0, wa (t )wb (t ¢) = dab w2ae -|t -t ¢|/ tc . (1.1)

Here α and β denote the Cartesian coordinates and the overline denotes
averaging over different random realizations B(t). We will see later that such
fluctuating fields arise quite naturally in the context of the electron spins in
solids.
The following description applies equally to the classical magnetic
moment described by the vector S as well as to the quantum mechanical
spin whose expectation value is S. Writing out the torque equation, S = w ´ S ,
we get the following equations of motion:

S x = −ω 0 S y + ω y (t )Sz − ω z (t )S y , (1.2)

S y = ω 0 Sx − ω x (t )Sz + ω z (t )Sx , (1.3)

B0, ω0

B(t), ω(t)

FIGURE 1.1 Electron spin precesses about the static B0 field along z. The randomly
fluctuating magnetic field B(t) causes spin relaxation and spin dephasing.
6   Chapter 1.  Spin Relaxation and Spin Dynamics in Semiconductors

Sz = ω x (t )S y − ω y (t )Sx . (1.4)

These equations are valid for one specific realization of ω(t). Our goal is to
find instead effective equations for the time evolution of the average spin,
S(t ) , given the ensemble of Larmor frequencies ω(t).
It is convenient to introduce the complex “rotating” spins S± and Larmor
frequencies ω± in the (x,y) plane:

S+ = Sx + iS y , S− = Sx − iS y , (1.5)

ω + = ω x + iω y , ω − = ω x − iω y . (1.6)

The inverse relations are

1 1
Sx = ( S+ + S − ) , S y = ( S+ − S − ) , (1.7)
2 2i
1 1
ωx = (ω+ + ω − ) , ω y = (ω+ − ω − ). (1.8)
2 2i
The equations of motion for the spin set (S+, S−, Sz) are

S+ = iω 0 S+ + iω z S+ − iω + Sz , (1.9)

S− = −iω 0 S− − iω z S− + iω − Sz , (1.10)

1 
Sz = −  i ( ω + S− − ω − S+ ) . (1.11)
2 
In the absence of the fluctuating fields, the spin S+ rotates in the complex
plane anticlockwise (for ω 0 > 0) while S− clockwise.
The precession about B0 can be factored out by applying the ansatz*:

S± = s± (t )e ± iω0t . (1.12)

Indeed, it is straightforward to find the time evolution of the set (s+, s−,
sz ≡ Sz ):

s+ = iω z s+ − iω + sz e − iω0t , (1.13)

s− = −iω z s− + iω − sz e iω0t , (1.14)

1 
sz = −  i  ω + s− e − iω0t − ω − s+ e iω0t  . (1.15)
2 

* This is analogous to going to the interaction picture when dealing with a quantum mechani-
cal problem of that type.
 1.1 Toy Model: Electron Spin in a Fluctuating Magnetic Field    7

The penalty for transforming into this “rotating frame” is the appearance of
the phase factors exp(±iω 0t).
The solutions of Equations 1.13 through 1.15 can be written in terms of
the integral equations

t t

∫0
∫
s+ (t ) = s+ (0) + i dt ′ω z (t ′)s+ (t ′) − i dt ′ω + (t ′)sz (t ′)e − iω0t ′ ,
0
(1.16)

t t

∫0
∫
s− (t ) = s− (0) − i dt ′ω z (t ′)s− (t ′) + i dt ′ω − (t ′)sz (t ′)eiω0t ′ ,
0
(1.17)

t
1
sz (t ) = sz (0) −
2i ∫
dt ′  ω + (t ′)s− (t ′)e − iω0t ′ − ω − (t ′)s+ (t ′)e iω0t ′  .
0
(1.18)

We should now substitute the above solutions back into Equations 1.13
through 1.15. The corresponding expressions become rather lengthy, so we
demonstrate the procedure on the s+ component only. We get

∫
s+(t ) = iω z (t )s+ (0) − ω z (t ) dt ′ω z (t ′)s+ (t ′)
0
t

∫
+ ω z (t ) dt ′ω + (t ′)sz (t ′)e − iω0t ′ − iω + (t )e − iω0t sz (0)
0
(1.19)

t
1
2 ∫
+ e − iω0t ω + (t ) dt ′  ω + (t ′)s− (t ′)e − iω0t ′ − ω − (t ′)s+ (t ′)e iω0t ′  .
0

The reader is encouraged to write the analogous equations for sz (that for s−
is easy to write since s− = s+* ).
We now make two approximations. First, we assume that the fluctuat-
ing field is rather weak and stay in the second order in ω.* This allows us to
factorize the averaging over the statistical realizations of the field

ω(t )ω(t ′)s(t ′) ≈ ω(t )ω(t ′) s(t ′) (1.20)

as the spin changes only weakly over the timescale, τc, of the changes of
the fluctuating fields. This approximation is called the Born approximation,
alluding to the analogy with the second-order time-dependent perturba-
tion theory in quantum mechanics. Going beyond the Born approximation
one would need to execute complicated averaging schemes of the product in
Equation 1.20, since s(t) in general depends on ω(t′ ≤ t).

* More precisely, we assume that |ω(t)|τc ≪ 1, so that the spin does not fully precess about the
fluctuating field before the field makes a random change.
8   Chapter 1.  Spin Relaxation and Spin Dynamics in Semiconductors

As the second assumption, we consider a “coarse-grained” time evolu-

tion, meaning that we are effectively averaging s(t) over the timescale of the
correlation time τc; we are interested in times t much greater than τc. That
allows us to approximate

t  τc t  τc

∫0
dt ′ ω(t )ω(t ′) s(t ′) ≈
∫ dt ′ω(t)ω(t ′) s(t),
0
(1.21)

since the correlation function ω(t )ω(t′) is significant in the time interval of
|t − t′| ≈ τc only. The above approximation makes clear that the spin s(t) is the
representative coarse-grained (running-averaged) spin of the time interval
(t − τc, t). Equation 1.21 is a realization of the Markov approximation. The
physical meaning is that the spin s varies only slowly on the timescale of τc
over which the correlation of the fluctuating fields is significant. We then
need to restrict ourselves to the timescales t larger than the correlation time
τc. In effect, we will see that in this approximation the rate of change of the
spin at a given time depends on the spin at that time, not on the previous his-
tory of the spin.
Applying the Born–Markov approximation to Equation 1.19, we obtain
for the average spin s+ the following time evolution equation*:

∫
s+ = i ω z (t )s+ (0) − dt ′ ω z (t )ω z (t ′) s+ (t )
0
t
1
∫
+ dt ′ ω z (t )ω + (t ′)e − iω0t ′ sz (t ) − i ω + (t )e − iω0t sz (0) + e − iω0t
0
2
(1.22)

∫
× dt ′ ω + (t )ω + (t ′)e − iω0t ′ s− (t ) − ω + (t )ω − (t ′)e iω0t ′ s+ (t ) .
0

Using the rules of Equation 1.1, Equation 1.22 simplifies to

t
1
∫
s+ = −ω 2z dt ′e −(t − t ′ )/ τc s+ (t ) + e − iω0t
0
2
(1.23)
t

∫
× dt ′ (ω 2x − ω 2y )e − iω0t ′ s− (t ) − (ω 2x + ω 2y )e iω0t ′ s+ (t ) e −(t − t ′ )/ τc .
0
 

Since we consider the times t ≫ τc, we can approximate

t t

∫0
∫
dt ′e −(t − t ′ )/ τc ≈ dt ′e −(t − t ′ )/ τc = τ c .
−∞
(1.24)

* The initial values of the spin, s(0), are fixed and not affected by averaging.
 1.1 Toy Model: Electron Spin in a Fluctuating Magnetic Field    9

Similarly,

t t
1 ± iω 0 τ c
∫0
∫
dt ′e −(t − t ′ )/ τc e − iω0 (t ± t ′ ) ≈ dt ′e −(t − t ′ )/ τc e − iω0 (t ± t ′ ) = τ c
−∞
1 + ω 20 τ 2c
. (1.25)

The imaginary parts induce the precession of s±, which is equivalent to shift-
ing (renormalizing) the Larmor frequency ω 0. The relative change of the
frequency is (ωτc)2, which is assumed much smaller than one by our Born
approximation. We thus keep the real parts only and obtain

1 τc  
s+ = −ω 2z τ c s+ + 2 2
(ω x − ω y )s− e
−2 iω 0 t
− (ω 2x + ω 2y )s+  . (1.26)
2 1 + ω 20 τ 2c  

Using the same procedure (or simply using s− = s*+ ), we would arrive for the
analogous equation for s−:

1 τc  
s+ = −ω 2z τ c s− + 2 2
(ω x − ω y )s+ e
2 iω 0 t
− (ω 2x + ω 2y )s−  . (1.27)
2 1 + ω 20 τ 2c  

Similarly,

τc
sz = −(ω 2x + ω 2y ) sz . (1.28)
1 + ω 20 τ 2c
For the rest of the section we omit the overline on the symbols for the spins,
so that S will mean the average spin. Returning back to our rest frame of the
spins rotating with frequency ω 0, we get

1 τc  
S+ = iω 0 S+ − ω 2z τ c 2 2 2 2
(ω x − ω y )S− − (ω x + ω y )S+  , (1.29)
2 1 + ω 20 τ 2c  

1 τc  
S− = iω 0 S− − ω 2z − 2 2 2 2
(ω x − ω y )S+ − (ω x + ω y )S−  , (1.30)
2 1 + ω 20 τ 2c  

τc
Sz = −(ω 2x + ω 2y ) Sz . (1.31)
1 + ω 20 τ 2c

Finally, going back to S x and Sy

τc
Sx = −ω 0 S y − ω 2z τ c Sx − ω 2y Sx , (1.32)
1 + ω 20 τ 2c

τc
S y = ω 0 Sx − ω 2z τ c S y − (ω 2x )S y , (1.33)
1 + ω 20 τ 2c

τc
Sz = −(ω 2x + ω 2y ) Sz . (1.34)
1 + ω 20 τ 2c
10   Chapter 1.  Spin Relaxation and Spin Dynamics in Semiconductors

We can give the above equation a more conventional form by introducing

two types of the spin decay times. First, we define the spin relaxation time
T1 by

1  2  τc
=  ω x + ω 2y  , (1.35)
T1  1 + ω 20 τ 2c
and the spin dephasing times T2 by

1 ω 2y τ c
= ω 2z τ c + , (1.36)
T2 x 1 + ω 20 τ 2c

1 ω 2x τ c
= ω 2z τ c + . (1.37)
T2 y 1 + ω 20 τ c2
We then write

S
Sx = − ω 0 S y − x , (1.38)
T2 x

Sy
S y = ω 0 Sx − , (1.39)
T2 y

S
Sz = − z . (1.40)
T1
Our fluctuating field is effectively at infinite temperature, at which the
average value for the spin in a magnetic field is zero. A more general spin
dynamics is

S
Sx = −ω 0 S y − x , (1.41)
T2 x

Sy
S y = ω 0 Sx − , (1.42)
T2 y

S − S0 z
Sz = − z . (1.43)
T1
where S0z is the equilibrium value of the spin in the presence of the static
magnetic field of the Larmor frequency ω0 at the temperature at which the
environmental fields giving rise to ω(t) are in equilibrium. The above equa-
tions are called the Bloch equations.
The spin components S x and Sy, which are perpendicular to the applied
static field B0, decay exponentially on the timescales of T2x and T2y, respec-
tively. These times are termed spin dephasing times, as they describe the
loss of the phase of the spin components perpendicular to the static field B0.
They are also often called transverse times, for that reason. The time T1 is
termed the spin relaxation time, as it describes the (thermal) relaxation of
Another random document with
no related content on Scribd:
The Project Gutenberg eBook of Memoirs of the
Lady Hester Stanhope, as related by herself in
conversations with her physician, vol. 3 (of 3)
This ebook is for the use of anyone anywhere in the United States
and most other parts of the world at no cost and with almost no
restrictions whatsoever. You may copy it, give it away or re-use it
under the terms of the Project Gutenberg License included with this
ebook or online at www.gutenberg.org. If you are not located in the
United States, you will have to check the laws of the country where
you are located before using this eBook.

Title: Memoirs of the Lady Hester Stanhope, as related by herself in

conversations with her physician, vol. 3 (of 3)

Author: Lady Hester Stanhope

Editor: Charles Lewis Meryon

Release date: December 26, 2023 [eBook #72167]

Language: English

Original publication: London: Henry Colburn, 1846

Credits: Carol Brown, Emmanuel Ackerman and the Online

Distributed Proofreading Team at https://www.pgdp.net
(This file was produced from images generously made
available by The Internet Archive)

*** START OF THE PROJECT GUTENBERG EBOOK MEMOIRS

OF THE LADY HESTER STANHOPE, AS RELATED BY HERSELF
IN CONVERSATIONS WITH HER PHYSICIAN, VOL. 3 (OF 3) ***
LADY HESTER STANHOPE’S RESIDENCE AT JOON, ON
MOUNT LEBANON
London, Henry Colburn, 1845
Day & Haghe, Lithʳᵉ to the Queen
 MEMOIRS
of the
LADY HESTER STANHOPE,
AS RELATED BY HERSELF
IN CONVERSATIONS WITH HER
PHYSICIAN;

COMPRISING
HER OPINIONS AND ANECDOTES OF
SOME OF THE MOST REMARKABLE PERSONS
OF HER TIME.
All such writings and discourses as touch no man will mend no man.—Tyers’s
Rhapsody on Pope.

Second Edition.

IN THREE VOLUMES.

VOL. III.

LONDON:
HENRY COLBURN, PUBLISHER,
GREAT MARLBOROUGH STREET.
1846.
 FREDERICK SHOBERL, JUNIOR,
PRINTER TO HIS ROYAL HIGHNESS PRINCE ALBERT,
51, RUPERT STREET, HAYMARKET, LONDON.
 CONTENTS

OF

THE THIRD VOLUME.

CHAPTER I.

Prince Pückler Muskau—His letter to Lady Hester

Stanhope—Story of the Serpent’s Cave—Letter from
Lady Hester to the Prince—Ride from Jôon to Sayda—
Cadi’s Justice—Madame Conti—Syrian surgeons 1

CHAPTER II.

Mehemet Ali’s hospitality to travellers—Prince

Pückler Muskau’s appreciation of it—His reception of
the Author—Reflections on passports—Lady Hester’s
pecuniary difficulties—Her reluctance to reduce her
establishment—Her restlessness—Presents in Eastern
countries—Severity necessary with Eastern servants—
Letter from Lady Hester to Lord Ebrington—Outrage
committed on old Pierre—Defection of the Ottoman
fleet—Khalyl Aga 29

CHAPTER III.

Lady Hester’s mode of life—Boghoz Bey—The 50

insurrection of the Druzes—Character of the Emir
Beshýr—Ibrahim Pasha—Lady Charlotte Bury—
Preparations for the reception of Prince Pückler
Muskau

CHAPTER IV.

Prince Pückler Muskau’s arrival at Jôon—His

costume—Physiognomical doctrines—The Prince’s
remarks on Lady Hester—Dr. Bowring—Lady Hester’s
remarks on the Prince—Race of Abyssinian women—
Remarks on public grants, &c.—The polytheistic
school of Germany—Remarks on pensions, on
Abyssinian slaves, &c.—Story of Sultan Abdallah, the
negro—Excursion on horseback—Horse-jockeys in
Syria—Servants’ vails—Lord M. and Captain G.—
Talismanic charm about Lady Hester—Her visions of
greatness 73

CHAPTER V.

Prince Pückler Muskau’s style of writing—Talking

beneficial to health—Young men of Lady Hester’s time
—Lady Hester’s superstitious belief in good and bad
days—Hamâady, the executioner—His importance—
Folly of education, according to Lady Hester—Lord
Hood, Lord Bridport, Payne, the smuggler’s son—the
O****s—The Prince’s self-invitations to dine out—B.—
Prince Pückler and old Pierre—The American
Commodore—Lady Hester’s cats—Mahomet Ali’s
secret devices 107

CHAPTER VI.

Author’s dilemma—Apprehensions of poisoning— 128

Mr. Cooper’s dray-boy—Memoirs of a Peeress—Lady
B. and the Duchess of——Novel scheme for making
maids obedient—English servants—Lady J.—Lord C.
—Mr. Pitt, and the disturbed state of England—Peers
made by Mr. Pitt—Footmen’s nosegays—Mr. Pitt’s last
words, as related by Gifford—Melancholy reflections—
Mr. Pitt’s signature—Mr. Pitt a Statesman inferior to
Lord Chatham—Mr. Fox—Sir Walter Scott—Shaykh
Mohammed Nasýb—Turkish dervises—Anecdote of
Sir William Pynsent—Sir John Dyke—High and low
descent exemplified in Captain—and Count Rewisky—
Lady Charlotte Bury—The Empress Josephine—
Buonaparte—Mr. Pitt’s physiognomy—Advantageous
offers refused by Lady Hester—Her house in
Montague Square—The Cheshire Squire—Ingratitude
of the world—Trust not in man, but in God

CHAPTER VII.

Journey to Beyrout—Death of Mrs. K—- —Mr.

George Robinson and M. Guys—The River Damoor—
Khaldy—Letter from Lady Hester to Mr. K.—Lord
Prudhoe—Mrs. Moore—Lady Hester’s dislike to be the
subject of occasional poetry—Striking a Turk—Lady
Hester’s opinion of Lord Byron—Arrival of Maximilian
Duke of Bavaria—Letter to the Baron de Busech—
Letter to H.R H. the Duke Maximilian—Adventures of
the Duke—Illness of the Duke’s negro, Wellington—
Vexation of His Royal Highness—Letter to Mr. K.,
merchant at Beyrout—Letter to Lord Brougham—
Professional visit to Sulyman Pasha’s child—League
between the maids and receivers of stolen goods—
Black doses for the Prince’s suite—Letter from Lady
Hester to the Duke of Bavaria on his intended visit—
The Duke leaves Syria 171

CHAPTER VIII.

Petty annoyances in hot countries—Lady Hester 225

refuses Duke Maximilian’s portrait—She insists on the
Author’s leaving her—Continuation of the negro
Wellington’s case—Progress of the Druze insurrection
—Destruction of locusts—Mysterious visit at the Dar—
Reasons why Lady Hester kept daring fellows in her
service—Russian spies—Dr. Lœve’s visit—Dangerous
state of the country—Lady Hester’s dream—Her
resolution to immure herself—Visit from Mr. M.—Visit
from Colonel Hazeta and Dr. Mill—Letter from Lord
Palmerston to Lady Hester—Her answer—
Inexpediency of having consular agents, not natives of
the country they represent—Successes of the Druzes
—Lady Hester’s belief in fortune-telling—Letter from
Sir Francis Burdett—Colonel Needham’s property—
Lord Coutts—Subscribers to pay Mr. Pitt’s debts—
Fright from a serpent—Battle of Yanta—Sir N. Wraxall
a peer—Discourse upon heads—A spy—Letter to the
Duke Maximilian of Bavaria

CHAPTER IX.

Vessel hired for the Author’s departure—Lady 271

Hester’s intention of writing her Memoirs—Letter from
Lady Hester to Sir Francis Burdett—From Lady Hester
to Count Wilsensheim—Events of the Druze
insurrection—Inexpediency of M. Guys’s removal from
Beyrout—Letter from the Author to Count Wilsensheim
—Letter from Lady Hester Stanhope to the Baron de
Busech—Lady Hester immured—Principal reason of
the Author’s return to Europe—His adieux—Passage
to Cyprus—Reception by Signor Baldassare Mattei—
Provisions in Cyprus—Mademoiselle Longchamps—
Letter from Lady Hester to the Author—Commissions
—Second Letter from Lady Hester to the Author—
Third Letter from Lady Hester to the Author—Advice—
Obligations—Violence of temper—Mr. U.—General
Loustaunau—Logmagi and the muleteer—Fourth
Letter from Lady Hester to the Author—
Correspondence of the first Lord Chatham—Lady
Hester’s death—Conclusion
 MEMOIRS

OF

LADY HESTER STANHOPE.

 chapter i.
Prince Pückler Muskau—His letter to Lady Hester Stanhope—Story of the
Serpent’s Cave—Letter from Lady Hester to the Prince—Ride from Jôon to Sayda
—Cadi’s Justice—Madame Conti—Syrian surgeons.

March 20.—Lady Hester rose about three in the afternoon, and

went into her garden: I joined her about five o’clock. Spring had
already begun to display its verdant livery. The weather was
exceedingly fine, and every bush and tree seemed to have swollen
with sap, buds, and leaves, so that the eye could perceive a palpable
difference even from the preceding day. The birds were singing on
every branch (for nobody dared to molest them in this sacred spot),
and the bulbuls sat warbling a low but gentle music, which, now and
then, was broken in upon by their clear whistle, falling in cadences
on the ear like sweet concords. It was one of those hours which a
man, who feels himself in the decline of life, or gradually sinking
under disease, would most regret, in thinking that the harmony of
nature must soon close on him for ever.
Lady Hester had placed herself in a small white alcove, which
closed the vista at the bottom of a walk. A sofa, covered with
marone-coloured cloth, with flowered chintz cushions, ran across the
back of the alcove. On this she was leaning; and, being dressed in
her white abah with its large folds, she looked exactly like an antique
statue of a Roman matron. Half way up the avenue stood an
attendant in a handsome white Nizàm dress, which is exceedingly
becoming to youth, waiting her call. As I advanced towards her,
between two hedges—the one of double jessamine in full bud, and
the other of the bright green pervenche, or periwinkle-plant, with its
blue flowers, forming an azure band from one end to the other, I was
struck with the magical illusion which she ever contrived to throw
around herself in the commonest circumstances of life.
 As I approached, she addressed me with more cheerfulness than
usual. “Do you know, doctor, that Prince Pückler Muskau is come to
Sayda, and has written me a very agreeable, and what appears to
be a very sincere, letter. Read it, and say what you think of it.”
Translated, it was as follows:

Prince Pückler Muskau to Lady Hester Stanhope.

March 20th, 1838.
My Lady,
As I am aware that you are but little fond of strangers’
visits, from having often found they proceeded from idle
curiosity, and sometimes even from more illiberal motives, I
freely confess, madam, it is not without some degree of
apprehension that, in my turn, I solicit permission to pay my
respects to you. Permit me, nevertheless, to assure you that,
for many years past, I have anticipated in fancy the pleasure
of knowing you, and that it would be a downright act of cruelty
on your part, if now, when the long wished-for moment is at
last arrived, you should refuse me the happiness of paying my
homage to the queen of Palmyra and the niece of the great
Pitt.
Besides, madam, I have the presumption to add that, from
what I have heard of you, there must exist some affinity of
character between us: for, like you, my lady, I look for our
future salvation from the East, where nations still nearer to
God and to nature can alone, some one day, purify the rotten
civilization of decrepit Europe, in which everything is artificial,
and where we are menaced, in a short time, with a new kind
of barbarism—not that with which states begin, but with which
they end. Like you, madam, I believe that astrology is not an
empty science, but a lost one. Like you, madam, I am an
aristocrat by birth and in principle; because I find a marked
aristocracy in nature everywhere. In a word, madam, like you,
I love to sleep by day and be stirring by night. There I stop;
for, in mind, energy of character, and in the mode of life, so
 singular and so dignified, which you lead, not every one that
would can resemble Lady Hester Stanhope.
I close this letter, which already must appear too long to
you, in earnestly entreating you not to set down as mere
expressions the dictates of a heart artless and ingenuous,
though old. I am neither a Frenchman nor an Englishman: I
am but an honest and simple German, who perhaps lies open
to the charge of too much enthusiasm, but never to that of
flattery or insincerity.
[Signed] Prince of Puckler Muskau.
PS. Should you consent to my coming, might I presume to
beg of you still farther to allow me to bring Count Tattenbach,
a young man in my employ, who would be so much hurt to
see me set off without him that I am induced to risk the
request! Although severely wounded from a pistol-shot, he
would not remain at Acre, for fear of losing the opportunity of
paying his homage to you: nevertheless, your will, my lady,
and not mine, be done in everything.
When I had finished reading the letter, Lady Hester resumed:
“Now, doctor, you must go and see the prince at Sayda, for I can’t
see him myself. The fatigue is too great for the present; but I will
engage him to return again when I am better. I could wish you to say
many things to him; for I can see that he and I shall do very well
together: besides, I must be very civil to him; for he has got such a
tongue and such a pen! I think I shall invite him to come and see the
garden and the horses; but you must tell him the mare’s back is not
only like a natural saddle, but that there are two back bones for a
spine; that is the most curious part.—But no! if he comes it will fill my
house with people, and I shall be worried to death; it will only make
me ill: so I’ll write to him after dinner.
“What I would wish you to talk to him about is principally the
serpent’s cave. You must tell him that, at ten or twelve hours’
distance from Tarsûs, there is a grotto, where once lived an
enormous serpent with a human head, such as he may have seen in
paintings representing the temptation of Eve. This serpent was
possessed of all the skill in demonology and magic known on earth.
There was an ancient sage who was desirous of acquiring this
serpent’s wisdom, which he knew could be come at by destroying
the serpent: he therefore induced the king of the country in which the
grotto is situate to enter into his views, and, by the king’s orders, the
neighbouring peasantry were assembled for that purpose. The sage,
who had given instructions that, in killing the serpent, they were to
proceed in a particular manner, and that the head was to be
reserved for him, stationed himself not far off: and when the
peasants went as usual to carry his food, intending to seize a proper
moment for effecting the destruction of so formidable a reptile, the
serpent, being gifted with the power of speech, said, ‘I know what
you are come for; you are come to take my life. I am aware that I am
fated to die now, and I shall not oppose it: but, in killing me, beware
how you follow the instructions which the wicked man who sent you
gave—do exactly the reverse.’ The peasants obeyed the serpent;
and, doing precisely the reverse of what the sage had enjoined them
to do, the king too died, and thus met the reward of his treacherous
conduct. Since that time no other serpent has appeared with a
human head, but several are living in the same grotto, and they still
are fed by the neighbouring villages, which send the food at stated
times, and the people have opportunities of seeing them with their
own eyes.
“You must tell the prince that this story is perfectly authentic, and
that, since the time of Sultan Mûrad down to the present day, certain
villages are exempted from taxes in consideration of providing
sustenance for the serpents. As he naturally must wish to inquire into
and see so remarkable a phenomenon, you may tell him that, if he
puts himself into a boat, he can land at Tarsûs or Swadéya, and
thence find his way a few hours’ distance farther, where the grotto
is.”
I hung my head during the whole of this story, reflecting what a
pretty errand I was going upon—to tell with a serious air a story so
devoid of probability, and so likely to strengthen the supposition,
common in England and elsewhere, that Lady Hester was crazy. She
observed my ill-concealed incredulity, and bawled out rather than
said, “Do you understand what I have been telling you? I suppose
you’ll tell me I am mad. Do you believe these things or not? why
don’t you answer?” As I remained mute, she said, “Well, will you
repeat them to the prince as I have related them?” I answered, “Yes,
I would do that.”—“But there,” said she, “go to dinner now, and come
again in the evening: I suppose you are thinking more of your soup
getting cold than of anything else.”
It was now sunset, and I found my family waiting dinner for me:
but that was a very common occurrence, and excited no surprise.
Having dined, I returned to Lady Hester. She was in the drawing-
room, and she immediately renewed the subject of the grotto.
“The king’s name,” said she, “was Tarsenus—he gave the name
to Tarsûs, or took his from it, I don’t know which. You must not forget
to speak to the prince likewise of the dervises’ monastery, called
Sultan Ibrahim, which is near Tripoli. He has only to present himself
there, and use my name; they are all like my brothers; they have
many learned men amongst them: if he wants a letter to them, I’ll
give him one. As for the Ansaréas, the Ishmäelites, the Kelbëas, and
all the sects on the mountains between Tripoli and Latakia, he will
get nothing out of them; so it is of no use his trying. If he returns to
Jerusalem, beg him not to extend his excursions towards the back of
the Dead Sea, or beyond the Jordan; for, as he is known to be a
friend of Mahomet Ali’s, some Arab behind a rock may pick him off,
just out of spite to Ibrahim Pasha.”
Lady Hester went on. “Did you perfectly understand what I said
before dinner about the serpents?” “Not altogether,” I replied.
“Perhaps,” she observed, “you don’t like to go down to the prince?” I
replied, anxious to seize any excuse for getting rid of the serpent
story, “I can’t say I have any particular wish to go.”—“Why,” said
Lady Hester, “you have done nothing but talk about him for these last
five months; what was that for, if you don’t want to see him?”—“I
talked about him,” answered I, “because I thought, from what I had
read of his works, you would be pleased to see him, if he came this
way?”
 Lady Hester paused a little while, and then proceeded:—“Well,
doctor, look here—you will talk a great deal about the serpents, and,
when you can see a proper opportunity, and that nobody is likely to
hear you, you will say to the prince in a low voice, ‘Lady Hester
recommends you to make some inquiries about the serpents’ cave[1]
when you are at Beyrout; for near to Tarsûs is Kolôok Bogàz, where
Ibrahim Pasha’s army is encamped: you will probably like to see it,
and this will be a good excuse, as everybody then will fancy you had
no political motive for going there.’”
The mystery was out; for two or three months Lady Hester had
been introducing the story of the human-headed serpent into her
conversations; for two or three months she had known of Prince
Pückler Muskau’s coming; for the same period I had entertained
apprehensions that her reason was impaired: M. Guys had been
primed in the same way, and formed the same conclusions; and all
turned out to be one of those long-laid plots, for which she was so
famous, to save the prince from being considered as a spy in the
dangerous neighbourhood of two hostile armies.
It had happened some years before, when the prince’s letters on
England were first translated, I, being in London, had noticed the
work in a letter to her, and had copied out a few observations on
herself made to the prince by a Hanoverian gentleman.
Subsequently, when with her, I had spoken of the prince’s increasing
reputation as a literary man, and mentioned such particulars of him
as had come to my knowledge. All this, and his alliance with the
family of Prince Hardenberg, with whom Lady Hester had been
acquainted, increased her desire to see him: but how to accomplish
it now was the difficulty. The few hours she spent with M. Guys had
done her a great deal of harm; for, being obliged to exert herself, and
not being able to treat a guest as unceremoniously as she could me,
the exertion proved too much for her strength. “Englishmen,” she
said, “are fond of turning everything into ridicule, and of saying
spiteful things of me; with the French and foreigners in general, it is
not so: and with a man of the world, like the prince, I have nothing to
fear on that score; but then how am I to lodge him and accommodate
his people and his dinners, with a wretched cook and nothing of any