Professional Documents
Culture Documents
AOD403
AOD403
TO252 TO251A
DPAK IPAK
D
Top View Bottom View Top View Bottom View
D
D
G
S G G
S S
D D
G S S
G
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 16 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 41 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.9 1.6 °C/W
* package TO251A
VGS=-10V, ID=-20A
TO251A 6.7 8.5 mΩ
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
-10V VDS=-5V
-6V
80 80
-5V
60 60
-ID (A)
-ID(A)
40 -4.5V 40 125°C
20 20 25°C
VGS=-4V
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
10 1.8
VGS=-20V
Normalized On-Resistance
1.6 ID=-20A
8
VGS=-10V
Ω)
RDS(ON) (mΩ
1.4
17
6
5
1.2 2
VGS=-10V
10
4 VGS=-20V ID=-20A
1
2 0.8
0 5 10
15 20 25 30 0 25 50 75 100 125 150 175 200
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C) 0
Gate Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20 1.0E+02
ID=-20A
1.0E+01
15 40
1.0E+00
125°C
Ω)
125°C
RDS(ON) (mΩ
1.0E-01
-IS (A)
10 25°C
1.0E-02
1.0E-03
5 25°C
1.0E-04
0 1.0E-05
0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)
10 5000
VDS=-15V
ID=-20A
8 4000
Ciss
Capacitance (pF)
-VGS (Volts)
6 3000
4 2000
Coss
2 1000
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0 400
TJ(Max)=175°C
TC=25°C
100.0 RDS(ON) 10µs 10µs 320
limited
100µs
-ID (Amps)
Power (W)
10.0 DC 240
1ms
10ms
1.0 160
0.1 TJ(Max)=175°C 80
TC=25°C
0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased
Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F)
Case (Note F)
10
D=Ton/T In descending order
Zθ JC Normalized Transient
RθJC=1.6°C/W 40
1
0.1 PD
Single Pulse
Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000.0 150
-IAR (A) Peak Avalanche Current
120
100.0
TA=150°C 60
30
TA=125°C
0
10.0
0 25 50 75 100 125 150 175
1 10 100 1000
80 10000
70 TA=25°C
1000
60
Current rating ID(A)
Power (W)
50
100
40
30
10
20
10
1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 175 Pulse Width (s) 0
°C)
TCASE (° 18
Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note F) Ambient (Note H)
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient
1 RθJA=50°C/W 40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Ig
Charge
td(on) tr td(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds