Principle Of Semiconductor Laser

When the P-N Junction diode is Forward Biased (i.e) the P

end of the diode is connected to the positive terminal of the
battery and the N end is connected to the negative terminal
of the battery. The poles and electrons diffuse through the
junction and combine with each other; meanwhile light
radiations or photons are radiated. This is called
Recombination Radiation
These emitted photons stimulate Other electrons & holes to
recombine w on required for
Lasing Actio
**
Classification Of Semiconductor
Laser

Semiconductor Laser

Homojunction
Diode Laser Heterojunction
Diode Laser

Double
Single
Heterojunction
Diode Laser Heterojunction
Diode Laser
 Homojunction Semiconductor
Laser
Homojunction diode lasers are those in which P endand Nend
of the diode are made of the same semiconductor material.
Example: Ga As laser
They use Direct Band Gap Semi-
Conductor material.
P-N Junction act as the active
medium.
The crystal is cut at a thickness of
0.5 mm
Applied voltage is given through
metal contacts on both surfaces of d
aw mge

the diode.
Pulse beam oflaser of 8400 Å is produced
Working
FORWARD BIASED DIODE LASER

metal contacs
Ga-As material on
both ends
P end

N end

Laser beam
Energy Level Diagram:
Homojunction
FREE ELECTRONS

Conduction Band
energy barier

stimulated emission Band gap

(Eg)
Energy
lasor-(8400 A)
FREE HOLES

Valence Band
 Heterojunction Semiconductor
Laser
Heterojunction Semiconductor lasers are those inthe
which P end is
N end is
made of one type of semiconductor
made of another type of semicondu
material and
Example : GaAlAs diode laser
Use Direct
Band Gap Semicond
*Consist of five layers namely
GaAs-p type
GaAIAs-p type
GaAs-p type (Active Medium)
GaAIAs n type
GaAs-n type
&The endtofaces of the third layer is andend
highly polished0one perfectly
paralell each other to reflect the laser beam; is
partialy polished to release the continious beam.
Working

metal contact
Pend
Ga As

GaAIAs
N end
Laser Beam
Energy Level Diagram
Heterojunction
 Comparision
HOMO JUNCTION DIODE HETEROJUNCTION DIas
LASER LASER
P and N regions are made P and N regions are made
of the same diode of different diode material
material Active Medium: Third
Active medlum: Single layer of p type material
crystal of PN Diode among the five layers
Pulse beam Continuous beam
Wavelength: 8400 A
Wavelength
8500A
: 8300A
Example:GaAs/GaAIAs,
Example: GaAs, InP InP/InAIP.