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APM2513NU
APM2513NU
• 25V/40A,
RDS(ON)=10.5mΩ (typ.) @ VGS=10V
RDS(ON)=16mΩ (typ.) @ VGS=4.5V G D
G
Applications
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APM2513NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
STATIC CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 25 - - V
VDS=20V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA
APM2513NU
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
b
DYNAMIC CHARACTERISTICS
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.8 1.5 3 Ω
Ciss Input Capacitance - 860 1120
VGS=0V,
Coss Output Capacitance VDS=15V, - 180 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 130 -
td(ON) Turn-on Delay Time - 8 15
tr Turn-on Rise Time VDD=15V, RL=15Ω, - 13 24
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 29 53
tf Turn-off Fall Time - 8 15
b
GATE CHARGE CHARACTERISTICS
Qg Total Gate Charge - 20 28
VDS=15V, VGS=10V,
Qgs Gate-Source Charge - 2 - nC
IDS=20A
Qgd Gate-Drain Charge - 6.4 -
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
50
40
40
30
30
20
20
10
10
o o
TC=25 C TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160
100 1
Normalized Effective Transient
it Duty = 0.5
Lim
n)
ID - Drain Current (A)
s(o
Rd 1ms 0.2
10ms 0.1
10
100ms 0.05
1s 0.02
0.1
DC 0.01
1
Single Pulse
2
o Mounted on 1in pad
TC=25 C o
RθJA :50 C/W
0.1 0.01
0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
20
60
4V 16
50
VGS=10V
40 12
3.5V
30
8
20 3V
4
10
2.5V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100
24 1.2
20 1.0
16 0.8
12 0.6
8 0.4
4 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
1.6
o
Tj=150 C
1.4
0.8
0.6
0.4
0.2 1
o
RON@Tj=25 C: 10.5mΩ
0.0 0.5
-50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0
1000 7
C - Capacitance (pF)
Ciss 6
800
5
600
4
400 3
2
Coss
200 Crss
1
0 0
0 5 10 15 20 25 0 4 8 12 16 20
VDS VDSX(SUS)
L tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω
tAV
VDS
RD
VDS
DUT
90%
VGS
RG
VDD
t 10%
p VGS
td(on) tr td(off) tf
Package Information
TO-252
E A
b3 c2 E1
L3
D1
D
H
L4
c
b e
SEE VIEW A
0
VIEW A
S TO-252
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 2.18 2.39 0.086 0.094
A1 0.13 0.005
b 0.50 0.89 0.020 0.035
b3 4.95 5.46 0.195 0.215
c 0.46 0.61 0.018 0.024
c2 0.46 0.89 0.018 0.035
D 5.33 6.22 0.210 0.245
D1 4.57 6.00 0.180 0.236
E 6.35 6.73 0.250 0.265
E1 3.81 6.00 0.150 0.236
e 2.29 BSC 0.090 BSC
H 9.40 10.41 0.370 0.410
L 0.90 1.78 0.035 0.070
L3 0.89 2.03 0.035 0.080
L4 1.02 0.040
0 0° 8° 0° 8°
OD0 P0 P2 P1 A
E1
F
W
B0
K0 A0 OD1 B A
B
SECTION A-A
T
SECTION B-B
d
H
A
T1
Application A H T1 C d D W E1 F
330.0±
2.00 50 MIN. 16.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
-0.00 -0.20
TO-252 P0 P1 P2 D0 D1 T A0 B0 K0
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20
-0.00 -0.40
(mm)
TP tp
Critical Zone
TL to TP
Ramp-up
TL
Temperature
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
t 25 °C to Peak
25
Time
Reliability Test Program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles
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